NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC(R) NRF1 process - A proprietary GaN-on-Silicon technology FEATURES * Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz * 18W P3dB CW Power * 25W P3dB peak envelope power * 1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency * Characterized for operation up to 32V * 100% RF tested * Thermally enhanced industry standard package * High reliability gold metallization process * Lead-free and RoHS compliant * Subject to EAR99 export control 3300 - 3800 MHz 18 Watt, 28 Volt GaN HEMT Typical 2-Tone Performance: VDS = 28V, IDQ = 200mA, Frequency = 3500MHz, Tone spacing = 1MHz, TC = 25C. Measured in Nitronex Test Fixture Symbol Parameter P3dB,PEP P1dB,PEP GSS h Min Typ Max Units Peak Envelope Power at 3dB Compression 14 18 - W Peak Envelope Power at 1dB Compression - 10 - W Small Signal Gain 10 11 - dB Peak Drain Efficiency at POUT = P3dB 43 48 - % RF Specifications (CW): VDS = 28V, IDQ = 200mA, Frequency = 3500MHz, TC = 25C, Measured in Load Pull System Symbol Typ Units Average Output Power at 3dB Gain Compression 18 W P3dB,Pulsed Pulsed Output Power at 3dB Gain Compression 20 W P1dB,Pulsed Pulsed Output Power at 1dB Gain Compression 15 W P3dB Parameter Typical OFDM Performance: VDS = 28V, IDQ = 200mA, POUT,AVG = 1.7W, single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency = 3300 to 3800MHz. TC=25C. Measured in Load Pull System (Refer to Table 1 and Figure 1) Symbol GP h EVM IRL NPT35015 Parameter Typ Units 10.5 dB Drain Efficiency 18 % Error Vector Magnitude 2.0 % Input Return Loss 10 dB Power Gain Page 1 NDS-005 Rev 5, April 2013 NPT35015 DC Specifications: TC = 25C Symbol Parameter Min Typ Max Units 100 - - V - - 4 mA Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 8mA) IDLK Drain-Source Leakage Current (VGS = -8V, VDS = 60V) On Characteristics VT Gate Threshold Voltage (VDS = 28V, ID = 8mA) -2.3 -1.8 -1.3 V VGSQ Gate Quiescent Voltage (VDS = 28V, ID = 200mA) -2.0 -1.5 -1.0 V RON On Resistance (VGS = 2V, ID = 60mA) - 0.45 0.50 W Drain Current (VDS = 7V pulsed, 300ms pulse width, 0.2% duty cycle, VGS = 2V) - 5.0 - A ID Absolute Maximum Ratings: Not simultaneous, TC = 25C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V PT Total Device Power Dissipation (Derated above 25C) qJC Thermal Resistance (Junction-to-Case) TSTG TJ Storage Temperature Range Operating Junction Temperature 28 W 6.25 C/W -65 to 150 C 200 C HBM Human Body Model ESD Rating (per JESD22-A114) 1A (>250V) MM Machine Model ESD Rating (per JESD22-A115) M1 (>50V) NPT35015 Page 2 NDS-005 Rev 5, April 2013 NPT35015 Table 1: Optimum Source and Load Impedances for OFDM Linearity, VDS = 28V, IDQ = 200mA Frequency (MHz) ZS (W) ZL (W) POUT (W) Gain (dB) Drain Efficiency (%) 33001 5.4 - j10.3 2.9 - j2.5 1.7 10.9 19 34001 5.0 - j10.7 2.9 - j2.6 1.8 11.0 22 35001 4.4 - j11.2 2.8 - j2.7 1.7 10.9 21 36001 4.0 - j12.5 2.8 - j3.3 1.7 10.9 20 37001 3.5 - j13.4 3.0 - j3.8 1.8 10.8 20 38001 3.5 - j14.6 3.2 - j4.2 1.8 10.7 20 Note 1: Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF, 2% EVM. ZS is the source impedance presented to the device. ZL is the load impedance presented to the device. Figure 1 - Optimal Impedances for OFDM Linearity, VDS = 28V, IDQ = 200mA NPT35015 Page 3 NDS-005 Rev 5, April 2013 NPT35015 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =200mA, TA=25C unless otherwise noted. Figure 2 - CW, pulsed CW, and PEP, 3500MHz, Constant Impedance States Figure 3 - CW Power Sweep, 3500MHz Figure 4 - Typical OFDM Performance POUT = 1.5W Figure 5 - Typical OFDM Performance at 3500MHz versus IDQ NPT35015 Page 4 NDS-005 Rev 5, April 2013 NPT35015 Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ =200mA, TA=25C unless otherwise noted. Figure 6 - Typical IMD3 Performance, 3500MHz Typical Device Characteristics VDS=28V, IDQ =200mA, TA=25C unless otherwise noted. Figure 8 - MTTF of NRF1 Devices Figure 7 - Power Derating Curve NPT35015 Page 5 NDS-005 Rev 5, April 2013 NPT35015 AD-006 3400-3600MHz 1.7W Linear WiMAX Application Design 802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 100% filled, 3.5MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF Detailed design information and data available at www.nitronex.com VGS VDS V GATE V DRAIN VGS + C15 150uF C1 0.1uF C2 0.01uF C3 1000pF R1 10 R2 0.33 C10 5.6pF C9 5.6pF C8 1.0uF C7 0.01uF + VDS C16 270uF 40mils 600mils C4 5.6pF RF IN RF IN RFOUT RF OUT C6 1000pF C5 100pF 35mils 520mils C11 5.6pF RFIN 68mils 40mils 80mils 340mils 90mils 430mils 490mils 175mils C12 0.3pF 595mils 240mils NPT35015 68mils 240mils RFOUT C14 C3 5.6pF 0.6pF Figure 9 - AD-006 Demonstration Board and Schematic Table 2: AD-006 Demonstration Board Bill of Materials Name Value Tolerance Vendor Vendor Number C1 0.1uF 10% Kemet C1206C104K1RACTU C2, C7 0.01uF 10% AVX 12061C103KAT2A C3, C6 1000pF 10% Kemet C0805C102K1RACTU C5 100pF 10% Kemet C0805C101K1RACTU C8 1.0uF 10% Panasonic ECJ-5YB2A105M C4, C9, C10, C11, C14 5.6pF +/- 0.1pF ATC ATC600F5R6B C12 0.3pF +/- 0.1pF ATC ATC600F0R3B C13 0.6pF +/- 0.1pF ATC ATC600F0R6B C15 150uF 20% Nichicon UPW1C151MED C16 270uF 20% United Chemi-Con ELXY630ELL271MK25S R1 10 ohm 1% Panasonic ERJ-2RKF10R0X R2 0.33 ohm 1% Panasonic ERJ-6RQFR33V PA1 -- -- -- NPT35015D Rogers R04350, t = 30mil er = 3.5 Substrate NPT35015 Page 6 NDS-005 Rev 5, April 2013 NPT35015 AD-006 3400-3600MHz 1.7W Linear WiMAX Application Design 802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 100% filled, 3.5MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF Detailed design information and data available at www.nitronex.com 5 Gain (dB) 4 Efficiency (%) EVM (%) 35 30 3 25 20 2 EVM (%) 40 15 10 1 Gain (dB), Drain Efficiency (%) 45 45 5 Gain (dB) Efficiency (%) 40 4 EVM (%) 35 30 3 25 20 2 15 10 1 5 0 0 15 20 25 30 35 0 40 0 15 20 25 Pout (dBm) 35 40 Pout (dBm) Figure 10 - Gain, Efficiency, EVM at 3400MHz Figure 11 - Gain, Efficiency, EVM at 3500MHz 50 5 45 Gain (dB), Drain Efficiency (%) 30 Gain (dB) Efficiency (%) 40 4 EVM (%) 35 3 30 25 2 20 EVM (%) Gain (dB), Drain Efficiency (%) 50 5 EVM (%) 50 15 10 1 5 0 0 15 20 25 30 35 40 Pout (dBm) Figure 12 - Gain, Efficiency, EVM at 3600MHz NPT35015 Page 7 NDS-005 Rev 5, April 2013 NPT35015 AD-006 3400-3600MHz 1.7W Linear WiMAX Application Design 802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, 20ms frame 100% filled, 3.5MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF Detailed design information and data available at www.nitronex.com Marker 1 -30.51 dBm 3.5 GHz -14 1 -24 -34 -44 -54 -64 -74 -84 -94 3489.50 Mhz Figure 14 - Typical S11 and S21 NPT35015 1.75 MHz/div 3510.50 MHz Figure 13 - ETSI Mask Compliance in Nitronex Demonstration Board at 3500MHz and POUT = 1.5W Page 8 NDS-005 Rev 5, April 2013 NPT35015 Ordering Information Part Number Order Multiple Description NPT35015DT 97 NPT35015DR 1500 Tube; NPT35015 in D (PSOP2) Package Tape and Reel; NPT35015 in D (PSOP2) Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com Figure 15 - D Package Dimensions and Pinout Inches Millimeters A Dim Min Max Min Max C A 0.189 0.196 4.80 4.98 B 0.150 0.157 3.81 3.99 C 0.107 0.123 2.72 3.12 8 D B 7 E 6 5 9 D/2 1 2 3 4 Chamfer A/2 9. Source Pad (Bottom) H G G1 SEATING PLANE 1.1.Gate NC 2.2.Gate Gate 3. Gate 3. Gate 4. Gate NC 5.4.Drain 6.5.Drain NC 7.6.Drain Drain 8. Drain 7. Drain 9. Source Pad 8.(Bottom) NC D 0.071 0.870 1.80 22.1 E 0.230 0.244 5.84 6.19 f F 0.050 BSC 0.0138 0.0192 1.270 BSC 0.35 0.49 G 0.055 0.061 1.40 1.55 G1 0.000 0.004 0.00 0.10 H 0.075 0.098 1.91 2.50 L 0.016 0.035 0.41 0.89 m 0 8 0 8 m SEATING PLANE L F (8X) f (6X) Figure 16 - Mounting Footprint .150 .055 .105 .100 .180 .030 PWB Pad (8X Typ) NPT35015 Solder Paste .020" X .040" (8X Typ) R.016 (4X Typ) .140 .145 .176 Heat Sink Pedestal Solder Mask .005" Relief (Typ) PWB Cutout Page 9 Solder Paste .080" X .120" (Typ) NDS-005 Rev 5, April 2013 NPT35015 Nitronex, LLC 2305 Presidential Drive Durham, NC 27703 USA +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. (c) Nitronex, LLC 2012. All rights reserved. NPT35015 Page 10 NDS-005 Rev 5, April 2013