FW250
No.7548-1/4
Features
•Low ON-resistance.
•Ultrahigh-speed switcing.
•4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID3A
Drain Current (PW≤10s) IDduty cycle≤1% 3.5 A
Drain Current (PW≤100ms) IDduty cycle≤1% 5.5 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 20 A
Allowable Power Dissipation PD
Mounted on a ceramic board(2000mm
2
✕0.8mm)1unit, PW≤10s
1.8 W
Total Dissipation PT
Mounted on a ceramic board(2000mm
2
✕0.8mm), PW≤10s
2.2 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=3A 2.8 4 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=3A, VGS=10V 110 145 mΩ
RDS(on)2 ID=1.5A, VGS=4V 150 215 mΩ
Marking : W250 Continued on next page.
N-Channl Silicon MOSFET
Ordering number : ENN7548
FW250
91603 TS IM T A-100553
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2129
[FW250]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
14
58
4.4
0.3
6.0
0.2
5.0
0.595 1.27
1.5
0.1 1.8max
0.43
FW250
No.7548-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=20V, f=1MHz 300 pF
Output Capacitance Coss VDS=20V, f=1MHz 54 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 34 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns
Rise T ime trSee specified Test Circuit. 23 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 30 ns
Fall Time tfSee specified Test Circuit. 40 ns
Total Gate Charge Qg VDS=30V, VGS=10V, ID=3A 7.8 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=3A 2.4 nC
Gate-to-Drain “Miller” Charge Qgd V DS=30V, VGS=10V, ID=3A 1.7 nC
Diode Forward Voltage VSD IS=3A, VGS=0 0.86 1.2 V
Switching Time Test Circuit
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=3A
RL=10Ω
VDD=30V
VOUT
FW250
VIN
10V
0V
VIN
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- VDrain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ambient Temperature, Ta -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
0
2.0
2.5
3.0
0.2 0.30.1
1.0
1.5
0.5
0
3
2
6
4
5
1
0.70.6
ID -- VDS
IT06041
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ID -- VGS
IT06042
VDS=10V
Ta=75°C
75°C
--25°C
Ta= --25°C
0.4 0.5
VGS=3.5V
4.0V
5.0V
10.0V
8.0V
6.0V
25°C
25°C
02468
80
100
120
140
20
40
60
160
180
200
220
240
260
280
300
0
80
100
120
140
20
40
60
160
180
200
220
240
260
280
300
0
1210 14 16
RDS(on) -- VGS
IT06043
RDS(on) -- Ta
IT06044
--60 --40 --20 0 20 40 60 80 100 120 140
Ta=25°C
ID=1.5A 3A
ID=1.5A, VGS=4V
ID=3.0A, VGS=10V
FW250
No.7548-3/4
Forward Drain Current, IF -- A
Diode Forward Voltage, VSD -- V
Total Gate Charge, Qg -- nC
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Forward Transfer Admittance,
y
fs -- S
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
0
100
1000
10
5
7
2
3
5
7
2
3
6020 30 40 5010
Ciss, Coss, Crss -- VDS
IT06048
A S O
2
3
5
7
2
3
5
7
2
3
5
7
5
2
3
10
1.0
0.1
0.01 23 57 23 57
0.1 1.0 10 23 57
100
IT06050
10
1.00.1 1.0
23 57 10
23 5
7
3
5
2
7
3
5
2
7
100
SW Time -- ID
IT06047
IT06046
0.6 0.80.4 1.0 1.2
IF -- VSD
0
0
8
7
9
10879652143
10
2
1
4
3
6
5
VGS -- Qg
IT06049
IT06045
0.01
1.0
0.1
23 57 1.0
2357 23 57
10
7
5
3
2
0.1
5
7
3
2
10
y
fs-- ID
0 0.2
0.01
10
1.0
0.1
7
5
3
2
7
5
3
2
7
5
3
2
VGS=0
VDD=30V
VGS=10V
tf
tr
td(off)
Operation in this area
is limited by RDS(on).
IDP=20A
ID=3A
≤10µs
100µs
DC operation
1ms
100ms
10s
10ms
VDS=10V
Ta= --25¡C
75¡C
25¡C
Ta=75¡C
25¡C
--25¡C
td(on)
Crss
Coss
Ciss
f=1MHz
VDS=30V
ID=3A
Ta=25°C
Single pulse
Mounted on a ceramic board(2000mm
2
✕0.8mm) 1unit
0
020 40 60 80 100 120
1.5
1.0
0.5
2.5
2.0
2.2
1.8
140 160
PD -- Ta
IT06051
1 unit
Total dissipation
Mounted on a ceramic board(2000mm
2
✕0.8mm),
PW≤10s
FW250
No.7548-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are subject
to change without notice.
PS