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© 1987
SILICON SWITCHING DIO DE
1SS305
HIGH SPEED SWITCHING
SILICON EPITAXIAL DIODE
DATA SHEET
Document No. D16310EJ2V0DS00 (2nd edition)
(Previous No. DC-2102)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
•Low capacitance: Ct = 4.0 pF MAX.
•High speed switching: trr = 3.0 ns MAX.
•Wide applications including switching, limitter, clipper.
ABS OLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage VRM 100 V
DC Reverse Vo ltage VR100 V
Peak Forward Current IFM 300 mA
Average Rectified Current IO100 mA
DC Forward Current IF100 mA
Maximum Temperatures
Junction Temperature Tj150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Thermal Resistance
Junction to Ambient Rth(j-a) 0.85 °C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERIST ICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
VF1 IF = 10 mA 720 850 mV
VF2 IF = 50 mA 850 1000 mV
Forward Voltage
VF3 IF = 100 mA 950 1200 mV
Reverse Current IRVR = 100 V 1.0
µ
A
Capacitance CtVR = 0 V, f = 1. 0 MHz 2.0 4.0 pF
Reverse Recovery T i me trr IF = 10 mA, VR = 6 V, RL = 100 Ω,
See Test Ci rcuit. 3.0 ns
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2.0±0.20.9±0.1
3
Marking
2
1
0.3
+0.1
−0
0.15
+0.1
−0.05
0.3
0.65
0 to 0.1
0.3 0.65
+0.1
−0
CONNECTION DIAGRAM (Top View)
2
1
3
1. N.C.
2. Anode
3. Cathode
Marking : A14
Data Sheet D16310EJ2V0DS
2
1SS305
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD CURRENT vs.
FORW ARD V OLTAGE
V
F
- Forward Voltage - V
0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000
I
F
- Forward Current - mA
T
A
= 100˚C
T
A
= 25˚C
T
A
= −50˚C
FORW ARD V OLTAGE TEMPERATURE
COEFFICIENT vs. FORWARD CURRENT
I
F
- Forward Current - mA
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0
1.0
2.0
3.0
∆V
F
- Forward Voltage Temperature Coefficient - mV/˚C
REVERSE CURRENT vs.
REVERSE V OLTA GE
VR - Reverse Voltage - V
010203040506070
0.0001
0.0002
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
IR - Reverse Current - µA
T
A
= 100˚C
T
A
= 25˚C
TERMINAL CAPACITANCE vs.
REVERSE V OLTA GE
V
R
- Reverse Voltage - V
12 468102030
0
1.0
2.0
3.0
C
t
- Terminal Capacitance - pF
f = 1.0 MHz
T
A
= 25˚C
Data Sheet D16310EJ2V0DS 3
1SS305
SWITCHING CHARACTERISTICS TEST CIRCUIT
Reverse recovery time : trr
Pulse
Generator
(50 Ω)
Sampling
Oscilloscope
(50 Ω)
DC
Source
Trigger
0.02 µF D.U.T.
3 kΩ
+
−I
F
= 10 mA, V
R
= 6.0 V, R
L
= 100 Ω
i
rr
= 0.1
•
I
r
Input V oltage
Waveform to Diode Output Current
Waveform in Diode
V
F
I
F
V
R
I
r
0
0
t
rr
0.1
•
I
r
1SS305
M8E 00. 4
The information in this document is current as of July, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
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