S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific
applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of
the device length. This makes S10140/S10141 series ideally suited for use in spectrophotometry. The binning operation offers significant
improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit.
S10140/S10141 series also features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long
integration time, thus achieving a wide dynamic range.
S10140/S10141 series has an effective pixel size of 12 × 12 µm and is available in image areas ranging from 12.288 (H) × 1.464 (V) mm2 (1024 ×
122 pixels) up to a large image area of 24.576 (H) × 6.072 (V) mm2 (2048 × 506 pixels).
Features
l
Low readout noise: 4 e-rms Typ.
l
High resolution: pixel size 12 × 12 µm
l
Non-cooled type: S10140 series
One-stage TE-cooled type: S10141 series
l
Line, pixel binning, area scanning
l
Greater than 90 % quantum efficiency at peak sensitivity
wavelength
l
Wide spectral response range
l
Wide dynamic range
l
MPP operation
l
High UV sensitivity with good stability
l
Same pin connections as S7030/S7031 series
Applications
l
Fluorescence spectrometer, ICP
l
Industrial inspection requiring
l
Semiconductor inspection
l
DNA sequencer
l
Low-light-level detection
IMAGE SENSOR
CCD area image sensor
Low readout noise, high resolution (pixel size: 12 µm)
S10140/S10141 series
■ Selection guide
Type No. Cooling Number of total
pixels
Number of active
pixels
Active area
[mm (H) × mm (V)]
Suitable
multichannel
detector head
S10140-1007 1044 × 128 1024 × 122 12.288 × 1.464
S10140-1008 1044 × 256 1024 × 250 12.288 × 3.000
S10140-1009 1044 × 512 1024 × 506 12.288 × 6.072
S10140-1107 2068 × 128 2048 × 122 24.576 × 1.464
S10140-1108 2068 × 256 2048 × 250 24.576 × 3.000
S10140-1109
Non-cooled
2068 × 512 2048 × 506 24.576 × 6.072
C10150
S10141-1007S 1044 × 128 1024 × 122 12.288 × 1.464
S10141-1008S 1044 × 256 1024 × 250 12.288 × 3.000
S10141-1009S 1044 × 512 1024 × 506 12.288 × 6.072
S10141-1107S 2068 × 128 2048 × 122 24.576 × 1.464
S10141-1108S 2068 × 256 2048 × 250 24.576 × 3.000
S10141-1109S
One-stage
TE-cooled
2068 × 512 2048 × 506 24.576 × 6.072
C10151
■ General ratings
Parameter S10140 series S10141 series
Pixel size 12 (H) × 12 (V) µm
Vertical clock phase 2 phases
Horizontal clock phase 2 phases
Output circuit One-stage MOSFET source follower
Package 24 pin ceramic DIP (refer to dimensional outlines)
Window *1 Quartz glass AR-coated sapphire glass
*1: Window-less is available upon request.
1
CCD area image sensor
S10140/S10141 series
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Operating temperature Topr -50 - +30 °C
Storage temperature Tstg -50 - +70 °C
OD voltage VOD -0.5 - +30 V
RD voltage VRD -0.5 - +18 V
ISV voltage VISV -0.5 - +18 V
ISH voltage VISH -0.5 - +18 V
IGV voltage VIG1V, VIG2V -10 - +15 V
IGH voltage VIG1H, VIG2H -10 - +15 V
SG voltage VSG -10 - +15 V
OG voltage VOG -10 - +15 V
RG voltage VRG -10 - +15 V
TG voltage VTG -10 - +15 V
Vertical clock voltage VP1V, VP2V -10 - +15 V
Horizontal clock voltage VP1H, VP2H -10 - +15 V
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Output transistor drain voltage VOD - 24 - V
Reset drain voltage VRD - 12 - V
Output gate voltage VOG - 3 - V
Substrate voltage VSS - 0 - V
Test point (vertical input source) VISV - VRD - V
Test point (horizontal input source) VISH - VRD - V
Test point (vertical input gate) VIG1V, VIG2V -9 -8 0 V
Test point (horizontal input gate) VIG1H, VIG2H -9 -8 0 V
High VP1VH, VP2VH - 3 - Vertical shift register
clock voltage Low VP1VL, VP2VL - -8 -
V
High VP1HH, VP2HH - 5 - Horizontal shift register
clock voltage Low VP1HL, VP2HL - -8 - V
High VSGH - 5 -
Summing gate voltage Low VSGL - -8 -
V
High VRGH - 5 -
Reset gate voltage Low VRGL - -8 - V
High VTGH - 3 -
Transfer gate voltage Low VTGL - -8 -
V
■ Electrical characteristics (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit
Signal output frequency fc - 250 500 kHz
Vertical shift register capacitance *2 CP1V, CP2V - 3600 - pF
Horizontal shift register capacitance *2 C
P1H, CP2H - 150 - pF
Summing gate capacitance CSG - 30 - pF
Reset gate capacitance CRG - 30 - pF
Transfer gate capacitance CTG - 75 - pF
Charge transfer efficiency *3 CTE 0.99995 0.99999 - -
DC output level *4 Vout 12 17 18 V
Output impedance *4 Zo - 8 - kΩ
Power consumption *4 *5 P - 4 - mW
*2: S10140-1108, S10141-1108S
*3: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*4: The values depend on the load resistance. (Typical, VOD=24 V, Load resistance=100 kΩ)
*5: Power consumption of the on-chip amplifier
2
CCD area image sensor
S10140/S10141 series
0
10
100 200
WAVELENGTH (nm)
TRANSMITTANCE (%)
300 400 500 600 700 800 900
1000 1100 1200
20
30
40
50
60
70
80
90
100 (Typ. Ta=25 ˚C)
QUARTZ WINDOW
AR COATED SAPPHIRE
QUANTUM EFFICIENCY (%)
WAVELENGTH (nm)
(Typ. Ta=25 ˚C)
0
200 400 600 800 1000 1200
10
20
30
40
50
60
70
80
90
100
FRONT-ILLUMINATED
BACK-THINNED
S10140/S10141
SERIES
FRONT-ILLUMINATED
(UV COAT)
● Window material
Type No. Window material
S10140 series Quartz glass *11
(option: window-less)
S10141 series AR-coated sapphire glass *12
(option: window-less)
S10142 series
(two-stage
TE-cooled types,
made to order)
AR-coated sapphire glass *12
(option: window-less)
*11: Resin sealing
*12: Hermetic sealing
*10: Spectral response with quartz glass or AR-coated
sapphire glass are decreased by the transmittance.
■ Spectral response (without window) *10 ■ Spectral transmittance characteristics
KMPDB0254EA KMPDB0110EA
■ Dark current vs. temperature
3
■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Saturation output voltage Vsat - Fw × Sv - V
Vertical 60 75 -
Horizontal 120 150 -Full well capacity
Summing
Fw
150 200 -
ke-
CCD node sensitivity Sv 4 5 6 µV/e-
25 °C - 100 1000
Dark current *6
MPP mode 0 °CDS - 5 50
e-
/pixel/
s
Readout noise *7Nr - 4 18 e- rms
Line binning 30000 37500 - -
Dynamic range *8
Area scanning DR 15000 18500 - -
Photo response non-uniformity *9PRNU - ±3 ±10 %
Spectral response range λ-200 to 1100 -nm
White spots - - 0 -
Point defect *10
Black spots - - 10 -
Cluster defect *11 --3-
Blemish
Column defect *12
-
--0-
*6: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*7: -50 °C, Operating frequency is 20 kHz.
*8: Dynamic range (DR) = Full well/Readout noise
*9: Measured at the half of the full well capacity output.
*10: W hite spots
Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C.
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half
of the saturation charge)
*11: 2 to 9 contiguous defective pixels
*12: 10 or more conti
g
uous defective
p
ixels
Fixed pattern noise (peak to peak)
Signal × 100
Photo response non-uniformity (PRNU) [%]
-50 -40 -30 -20 0-10 10 20 30
TEMPERATURE (˚C)
0.01
0.1
1
10
100
1000
DARK CURRENT (e
-
/pixel/s)
(Typ.)
KMPDB0255EA
CCD area image sensor
S10140/S10141 series
■ Device structure (Conceptual drawing of top view)
23
22
21
20
14
15
24
1
2
12
11
893
4
5
2 BEVEL
SIGNAL OUT
2n
4 BLANK 4 BLANK
V=122, 250, 506
H=1024, 2048
4 BEVEL
THINNING
THINNING
12345
2
3
4
5
V
H
6 BEVEL 6 BEVEL
2
nSIGNAL OUT
13
10
KMPDC0244EA
INTEGRATION PERIOD
(Shutter must be open) VERTICAL BINNING PERIOD
(Shutter must be closed)
P1V
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
3.. 62
3..126
3..254
63
127
255
64←
128←
256←
58 + 6 (BEVEL): S1014*-1007/-1107
122 + 6 (BEVEL): S1014*-1008/-1108
250 + 6 (BEVEL): S1014*-1009/-1109
Tpwv
Tovr
Tpwh, Tpws
Tpwr
123
531
1043 532
1044: S1014*-1007/-1008/-1009
: S1014*-1107/-1108/-1109
4..530
4..1042
12
D19D2D1 D20
D3..D10, S1..S1024, D11..D18
RG
OS
S1..S512
: S1014*-1007/-1008/-1009
: S1014*-1107/-1108/-1109
■ Timing chart
KMPDC0242EA
Parameter Symbol Remark Min. Typ. Max. Unit
Pulse width Tpwv 6 8 - µs
P1V, P2V, TG Rise and fall time Tprv, Tpfv *13
20 - - ns
Pulse width Tpwh 1000 2000 -ns
Rise and fall time Tprh, Tpfh 10 - - nsP1H, P2H
Duty ratio -
*13
40 50 60 %
Pulse width Tpws 1000 2000 - ns
Rise and fall time Tprs, Tpfs 10 - - nsSG
Duty ratio -
-
40 50 60 %
Pulse width Tpwr 100 1000 -ns
RG Rise and fall time Tprr, Tpfr -5 - - ns
TG – P1H Overlap time Tovr - 1 2 - µs
*13: The clock pulses should be overlapped at 50 % of clock pulse amplitude.
Line bininng
4
CCD area image sensor
S10140/S10141 series
INTEGRATION PERIOD
(Shutter must be open)
P1V
RG
OS
P2V, TG
P1H
P2H, SG
READOUT PERIOD (Shutter must be closed)
ENLARGED VIEW
Tpwv
Tovr
Tpwr
D1 D2 D3 D4 D18 D19 D20
D5..D10, S1..S1024, D11..D17
P2V, TG
P1H
P2H, SG
RG
OS
Tpwh, Tpws
123
S1..S512 : S1014*-1007/-1008/-1009
: S1014*-1107/-1108/-1109
4.. 63
4..127
4..255
64←58 + 6 (BEVEL): S1014*-1007/-1107
128←122 + 6 (BEVEL): S1014*-1008/-1108
256←250 + 6 (BEVEL): S1014*-1009/-1109
KMPDC0243EA
Parameter Symbol Remark Min. Typ. Max. Unit
Pulse width Tpwv 6 8 - µs
P1V, P2V, TG Rise and fall time Tprv, Tpfv *14
20 - - ns
Pulse width Tpwh 1000 2000 -ns
Rise and fall time Tprh, Tpfh 10 - - nsP1H, P2H
Duty ratio -
*14
40 50 60 %
Pulse width Tpws 1000 2000 - ns
Rise and fall time Tprs, Tpfs 10 - - nsSG
Duty ratio -
-
40 50 60 %
Pulse width Tpwr 100 1000 -ns
RG Rise and fall time Tprr, Tpfr -5 - - ns
TG - P1H Overlap time Tovr - 1 2 - µs
*14: The clock pulses should be overlapped at 50 % of clock pulse amplitude.
Area scanning
5
CCD area image sensor
S10140/S10141 series
(24 ×) 0.5
7.3
1.0
3.0
6.7
4.8
PHOTOSENSITIVE SURFACE
7.7
1st PIN INDICATION PAD
a
4.0
19.0
22.4
22.9
44.0
52.0
60.0
2.54
WINDOW 28.6
ACTIVE AREA 24.58
8.2
S10141-1107S: a=1.464
S10141-1108S: a=3.000
S10141-1109S: a=6.072
TE-COOLER
WINDOW 16.3
8.2
34.0
50.0
2.54
22.9
19.0
4.0
42.0
22.4
a
7.3
1.0
7.7
6.7
4.8
ACTIVE AREA
12.29
PHOTOSENSITIVE SURFACE
1st PIN INDICATION PAD
3.0
TE-COOLER
S10141-1007S: a=1.464
S10141-1008S: a=3.000
S10141-1009S: a=6.072
(24 ×) 0.5
4.4
4.8
2.4
3.8
PHOTOSENSITIVE SURFACE
1st PIN INDICATION PAD
3.0
(24 ×) 0.5
WINDOW 16.3
8.2
34.0 2.54
22.9
22.4
a
ACTIVE AREA
12.29
S10140-1007: a=1.464
S10140-1008: a=3.000
S10140-1009: a=6.072
■ Dimensional outlines (unit: mm)
S10140-1007/-1008/-1009 S10140-1107/-1108/-1109
KMPDA0207EA KMPDA0208EA
S10141-1007S/-1008S/-1009S S10141-1107S/-1108S/-1109S
KMPDA0209EB KMPDA0210EB
3.0
PHOTOSENSITIVE SURFACE
4.4
2.4
4.8
3.8
WINDOW 28.6
22.9
22.4
ACTIVE AREA 24.58
a
8.2
44.0 2.54
1st PIN INDICATION PAD
S10140-1107: a=1.464
S10140-1108: a=3.000
S10140-1109: a=6.072
(24 ×) 0.5
6
CCD area image sensor
S10140/S10141 series
■ Pin connections
S10140 series S10141 series
Pin
No. Symbol Function Symbol Function
Remark
(standard
operation)
1 RD Reset drain RD Reset drain +12 V
2 OS Output transistor source OS Output transistor source RL=100 kΩ
3 OD Output transistor drain OD Output transistor drain +24 V
4 OG Output gate OG Output gate +3 V
5 SG Summing gate SG Summing gate
Same pulse as P2H
6 - -
7 - -
8 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2
9 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1
10 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2)
11 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1)
12 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Connect to RD
13 TG *15 Transfer gate TG *15 Transfer gate
Same pulse as P2V
14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2
15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1
16 - Th1 Thermistor
17 - Th2 Thermistor
18 - P- TE-cooler-
19 - P+ TE-cooler+
20 SS Substrate (GND) SS Substrate (GND) GND
21 ISV Test point (vertical input source) ISV Test point (vertical input source) Connect to RD
22 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2)
23 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1)
24 RG Reset gate RG Reset gate
*15: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as
P2V.
■ Specifications of built-in TE-cooler (Typ.)
Parameter Symbol Condition
S10141-1007S/-1008S/-1009S S10141-1107S/-1108S/-1109S
Unit
Internal resistance Rint Ta=25 °C 2.5 1.2
Ω
Maximum current *16 Imax Tc *17=Th *18=25 °C 1.5 3.0 A
Maximum voltage Vmax Tc *17=Th *18=25 °C 3.8 3.6 V
Maximum heat absorption *
19
Qmax 3.4 5.1 W
Maximum temperature
of heat radiating side - 70 70 °C
*16: Maximum current Imax:
If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to
the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler
and maintain stable operation, the supply current should be less than 60 % of this maximum current.
*17: Temperature of the cooling side of thermoelectric cooler.
*18: Temperature of the heat radiating side of thermoelectric cooler.
*19: Maximum heat absorption Qmax.
This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the
maximum current is supplied to the unit.
0
1
2
3
VOLTAGE (V)
CCD TEMPERATURE (˚C)
4
7
6
5
-40
-30
432
CURRENT (A)
10
-20
-10
0
10
20
30
(Typ. Ta=25 ˚C)
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
0
1
2
3
VOLTAGE (V)
CCD TEMPERATURE (˚C)
4
7
6
5
-40
-30
2.01.51.0
CURRENT (A)
0.50
-20
-10
0
10
20
30
(Typ. Ta=25 ˚C)
VOLTAGE vs. CURRENT
CCD TEMPERATURE vs. CURRENT
KMPDB0178EA KMPDB0179EA
S10141-1007S/-1008S/-1009S S10141-1107S/-1108S/-1109S
7
CCD area image sensor
S10140/S10141 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliab le . Howe ver, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
■ Specifications of built-in temperature sensor
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
R1 = R2 × expB (1 / T1 - 1 / T2)
where R1 is the resistance at absolute temperature T1 (K)
R2 is the resistance at absolute temperature T2 (K)
B is so-called the B constant (K)
The characteristics of the thermistor used are as follows.
R (298K) = 10 kΩ
B (298K / 323K) = 3450 K
Cat. No. KMPD1094E05
Sept. 2007 DN
■ Precaution for use (Electrostatic countermeasures)
● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with
an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.
● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to
discharge.
● Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
■ Element cooling/heating temperature incline rate
When cooling the CCD by an exter nally attached cooler, set the cooler operation so that the temperature gradient (rate of
temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute.
KMPDB0111EB
10 kΩ
220 240 260
TEMPERATURE (K)
RESISTANCE
280 300
100 kΩ
1 MΩ
8
