SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JANUARY 1996
FEATURES
* 60 Volt VDS
*R
DS(on)=5Ω
PARTMARKIN G DETAI L – MY
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuo us Drain Cur rent at Tamb = 25°C ID150 mA
Pulsed Drain Current IDM 3A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb = 25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BVDSS 60 V ID=100µA, VGS=0V
Gate-Source
Breakdown Voltage VGS(th) 0.8 2.5 V ID=1mA, VDS= VGS
Gate Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V
Zero Ga te Voltage
Drain Current (1) IDSS 10 µAVDS=60 V, VGS=0V
On State Drain
Current(1) ID(on) 750 mA VDS=15 V, VGS=10V
Static Dr ain Source On
State Resistance (1) RDS(on) 5.0
7.5 Ω
ΩVGS=10V, ID=500mA
VGS=5V, ID=200mA
Forward
Transconductance
(1)(2)
gfs 100 mS VDS=15V, ID=500mA
Input Capacitance (2) Ciss 60 pF
Common So urce
Output Capacita nce (2) Coss 25 pF VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer
Capacitance (2) Crss 5pF
Turn-On Time (2)(3) t(on) 310ns
VDD
≈15V, ID=600mA
Turn-Off Time (2)(3) t(off) 410ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse ge nerator
Spice parameter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
VN10LF
D
G
S
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