LITE-ON SEMICONDUCTOR SB570 thru SB5100 REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability The plastic material carries UL recognition 94V-0 For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications A A B C D MECHANICAL DATA DO-201AD Min. Max. 25.4 7.30 9.50 Dim. A Case : JEDEC DO-201AD molded plastic Polarity : Color band denotes cathode Weight : 0.04 ounces, 1.1 grams Mounting position : Any B 1.20 1.30 C 4.80 5.30 D All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL SB570 SB580 SB590 SB5100 UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TL=90 C Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load VRRM VRMS VDC 70 49 70 80 56 80 90 63 90 100 70 100 V V V I(AV) 5.0 A IFSM 125 A Maximum forward Voltage at 5.0A DC @TJ =25 C @TJ =100 C VF 0.85 0.75 V Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =100 C IR 0.5 50 mA CJ 135 pF R0JL 6 C/W TJ -55 to +150 C TSTG -55 to +150 C Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Thermal Resistance Junction to Lead. REV. 1, Apr-2005, KDHF06 RATING AND CHARACTERISTIC CURVES SB570 thru SB5100 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 6.0 5.0 4.0 3.0 2.0 1.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTHS 0 25 50 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 125 100 175 75 50 25 Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 5 LEAD TEMPERATURE , 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.3 - TYPICAL JUNCTION CAPACITANCE 1000 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 100 10 INSTANTANEOUS FORWARD CURRENT ,(A) 100 10 1.0 TJ = 25 C PULSE WIDTH 300us 0.1 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS REVERSE VOLTAGE , VOLTS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 10.0 INSTANTANEOUS REVERSE CURRENT ,(mA) CAPACITANCE , (pF) 20 10 NUMBER OF CYCLES AT 60Hz 1.0 TJ = 100 C 0.1 TJ = 25 C 0.01 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE , (%) REV. 1, Apr-2005, KDHF06