NPN Silicon Planar Medium Power Transistors ZTX452 ZTX453 FEATURES @ High power dissipation: 1W at T, np = 25C @ hee specified up to 1A @ High Vceq uo tp 100V @ ZTX452 complementary to ZTX552 DESCRIPTION These are plastic encapsulated, general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Application areas include: audio frequency amplifiers, drivers and output stages, oscillators and general purpose switching. The E-line package is formed by transfer moulding a silicone plastic specially selected to provide a rugged one-piece encapsulation resistant to severe environments and allow the high junction temperature operation normally ABSOLUTE MAXIMUM RATINGS Plastic E-Line (TO-92 Compatible) associated with metal can devices. E-line encapsulated devices are approved for use in military, industrial and professional equipments. Alternative lead configurations are available as plug-in replacements of TO-5/39 and TO-18 metal can types, and for surface mounting. Parameter Symbol ZTX452 | ZTX453 Unit Collector-base voltage Vogo 100 120 Vv Collector-emitter voltage Vceo 80 100 Vv Emitter-base voltage Ves 5 Vv Peak pulse current (see note below) lon 2 A Continuous d.c. current Ig 1 A Base current Ig 200 mA Power dissipation at T,,,, = 25C Prot 1 Ww at Toase= 25C 2 Ww Operating and storage temperature range -55 to +200 c Note: Consult Safe Operating Area graph for conditions. SE53ZTX452 ZTX453 CHARACTERISTICS (at T,,,,= 25C unless otherwise stated). ZTX452 ZTX453 Parameter Symbol Unit Conditions m Min. | Max. | Min. | Max. Collector-base Icro - 0.1 ~ - HA Vcg = 80V cut-off current - - - 0.1 pA Vcg= 100V Emitter-base cut-off lego - 0.1 - 0.1 HA Vep=4V current Collector-emitter Vecetsat) - 0.7 - 0.7 Vv Ic = 150mA, Ig= 15mA saturation voltage Base-emitter Vaetsat) - 1.3 - 1.3 Vv lc = 150mA, Ig= 15mMA saturation voltage Collector-emitter Veeoisus} 80 - 100 - Vv Ic =10mA sustaining voltage Static forward Hee 40 | 150 | 40 | 200 Ic=150mA, Vee = 10V* current transfer ratio 10 - 10 - Ic=1A, Vcp= 10V* Transition frequency | f; 160} | 150} MHz | Ip =50mA, Veg = 10V f = 100MHz Output capacitance Cobo - 15 - 15 pF Vea = 10V, f= 1MHz *Measured under pulsed conditions. Pulse width = 300us. Duty cycle< 2%. MAXIMUM DISSIPATION (WATTS) Q -55 -40 -20 20 40 60 386880 100.1 TEMPERATURE C Derating curve 160 200 3754/2 SE54ZTX452 ZTX453 COLLECTOR CURRENT {lc} AMPS 1 100 COLLECTOR-EMITTER VOLTAGE (Vce) VOLTS Safe operating area at T,,, = 25C {single pulse) 160 TRANSIENT THERMAL IMPEDANCE ocrw 120 100 80 6a 40 100us ims 10ms 100ms 1s 10s 100s PULSE WIDTH Maximum transient thermal impedance curves SE55ZTX452 ZTX453 14 4 BASE- EMITTER SATURATION VOLTAGE Var {sat} 1 (VOLTS) 06 04 ImA 10mA 100mA 1A 2A COLLECTOR CURRENT (Ic) 27X452/07/86 Typical base-emitter saturation voltage plotted against collector current COLLECTOR- EMITTER SATURATION VOLTAGE Vee (sat) (VOLTS) imA 1OmA 100mA 1A 2A COLLECTOR CURRENT (Ic) Z1X 6452/07/86 Typical collector-emitter saturation voltage plotted against collector current SE56ZTX452 ZTX453 NORMALISED STATIC FORWARD CURRENT TRANSFER RATIO % (heel tmA 10ma TOOmA A COLLECTOR CURRENT {lc} Typical static forward current transfer ratio plotted against collector current BASE- EMITTER TURN-ON VOLTAGE Vee con) (VOLTS) 1OmA 1A COLLECTOR CURRENT {Ic} ZIN4S 207186 Typical base-emitter turn-on voltage plotted against collector current SE57