F 1235B
F 1235C
GaAs-Infrarot-Lumineszenzdiode (950 nm, 200 µm Kantenlänge)
GaAs Infrared Emitti ng Diode (950 nm, 8 mil)
Vorläufige Daten / Preliminary Data
2003-04-10 1
Wesentliche Merkmale
Chipgröße 200 x 200 µm2
Emissionswellenlänge: 950 nm
GaAs-LED mit sehr hohem Wirkungsgrad
Gute Linearität (Ie = f [IF]) bei hohen Strömen
Gleichstrom- oder Impulsbetrieb möglich
Hohe Zuverlässigkeit
Anwendungen
Optokoppler
Industrieelektronik
Optokoppler
Datenübertragung
Positionsüberwachung
Barcode-Leser
Automobiltechnik
Sensorik
Alarm- und Sicherungssysteme
IR-Freiraumübertragung
Typ
Type Bestellnummer
Ordering Code Beschreibung
Description
F 1235B Q65110A0694 Infrarot emittierender Chip, Oberseite Anodenanschluß,
Rückseite AuGe-Eutektikum,
Infrared emitting die, top side anode connection, backside
AuGe-eutecticum
F 1235C on request Infrarot emittierender Chip, Oberseite Anodenanschluß,
Rückseite Au-Legierung.
Infrared emitting die, top side anode connection, backside
Au-alloy
Features
Chip size 200 x 200 µm2
Peak wavelength: 950 nm
Very highly efficient GaAs LED
Good linearity (Ie = f [IF]) at high currents
DC or pulsed operations are possible
High reliability
Applications
Optocoupler
Industrial electronics
Optocoupler
Data transmission
Position sensing
Barcode reader
Automotive technology
Sensor technology
Alarm and safety equipment
IR free air transmission
2003-04-10 2
F 1235B F 1235C
Elektrische Werte (TA = 25 °C)
Electrical values1) (TA = 25 °C)
Bezeichnung
Parameter Symbol
Symbol Wert
Value2) Einheit
Unit
min. typ. max.
Emissionswellenlänge
Peak wavelength
IF = 10 mA
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax,
Spectral bandwidth at 50% of Imax
IF = 10 mA
∆λ 55 nm
Schaltzeiten, Ie von 10% auf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50
Switching times, Ie from 10% to 90% and from 90%
to 10%, IF = 100 mA, RL = 50
tr, tf0.4/0.3 µs
Sperrspannung
Reverse voltage
IR = 1µA
VR5V
Durchlaβspannung
Forward voltage
IF = 60 mA
VF1.45 1.65 V
Strahlungsleistung
Radiant Power3)
IF = 20 mA
Φe1.2 mW
Photostrom (Spezifikationsparameter)
Photocurrent (specified parameter)
IF = 10 mA
Ie0.045 a.u.
1) Measurement l i mit s d e scribe actual set t in gs an d d o not include measuremen t unce r ta in ti es. Each waf er a nd f ragment
of a wafer is subj ect to final testi ng. The wafer o r its pieces are i ndividually at tached on foils (ri ngs). Sample chips a re
picked from each foi l and pla ced on a sp ecial carri er for measuremen t purpo ses. The sampli ng densi ty is one chip p er
2 cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a sample
fails in that measurement, an area of 0,5 cm² around each fail ed sample is marked by pen. All el. values are referenced
to the vendor's measurement system (correlation to customer product(s) is required)
2) Typical (re fere d to as ty p.) dat a a re def i ned as l on g- te rm production mean values and ar e onl y given for informa tion .
This is no t a specified value
3) Radiant power is measured on TO-18 header in integrating sphere.
F 1235B F 1235C
2003-04-10 3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter Symbol
Symbol Wert
Value1) Einheit
Unit
min. typ. max.
Chipkantenlänge (x-Richtun g)
Length of chip edge (x-direction) Lx0.18 0.2 0.22 mm
Chipkantenlänge (y-Richtun g)
Length of chip edge (y-direction) Ly0.18 0.2 0.22 mm
Durchmesser des Wafers
Diameter of the wafer D100 mm
Chiphöhe
Die height H185 205 225 µm
Bondpaddurchmesser
Diameter of bondpad d125 µm
Weitere Informationen
Additional information2)
Vorderseitenmetallisierung
Metallization frontside Aluminium
Aluminum
Rückseitenmetallisierung
Metallization backside AuGe-Eutektikum/AuGe-eutectics (F1235B)
Au-Legierung/Au-alloy (F1235C)
Trennverfahren
Dicing Sägen
Sawing
Verbindung Chip - Träger
Die bonding Eutectic bonding/Legieren (F1235B)
Glueing, Kleben(F1235C)
1) Typical (ref ered t o a s typ.) d at a are def in ed a s long-term pro duc ti on mean v al ues a nd a r e onl y g iv en f or inf orma tion.
This is no t a specified value
2) All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection
A63501-Q0013-N001-*-76G3:
The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The
visual inspec tion of chip backs ide is p erformed by e ye fo r 100% of the area of ea ch wafer. I f decisio ns (goo d/bad) a re
not possibl e additional a stereo microscop e with incident l ight with 40x-80 x magnificatio n is used. Areas grea ter than
¼ cm² which have an amount of more than 3% failed dies will be marked manually with pen. The marked area from
backside will be transfered to frontside and will be also marked manually with pen. The visual inspection of chip
frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of
each wafer. Areas greater than 1 cm² which have an amount of more than 50% failed dies and areas greater than 2
cm² which ha ve an amount of more th an 25% failed dies will be marked. The quality inspection (final visual inspection)
is performed by production. An additional visual inspection step as special release procedure by QM after the final
visual inspection is not installed.
F 1235B F 1235C
2003-04-10 4
fj
Grenzwert1)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Maximaler Betriebstemperaturbereich
Maximum Operating temperature range Top -40...+85 °C
Maximaler Lagertemperaturbereich
Maximum storage temperature range Tstg -40...+85 °C
Maximaler Durchlaßstrom
Maximum forward current IF30 mA
Maximaler Stoßstrom
Maximum surge current
tp = 10 µs, D = 0.005
IS0.5 A
Maximale Sperrschichttemperatur
Maximum junction temperature Tj125 °C
1)Maximum ratings are strongly package dependent and may differ between different packages. The values given
represent the chip in a TO-18 package.
F 1235B F 1235C
2003-04-10 5
Relati ve Sp ectral Emi ssi o n 1) IFrel= f (λ)
TA = 25 °C
Forward C urrent1)
IF= f (VF), Single pulse, tp = 20 ms, TA = 25 °C
1) Based on typ.(see page 2, footnote 2 for explanation)
data measured in OSRAM Opto Semiconductors
TOPLED® package.
Radiant Intensity1) Ie/Ie(100mA) = f (IF)
TA = 25 °C, single pulse: tp = 20 µs
OHR01938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
V
OHF00367
F
10
-2
0
Ι
F
12340.5 1.5 2.5 V
10
-1
10
0
10
1
10
2
10
3
10
4
mA
OHF00369
10
-1
10
0
10
12
10 10
3
-3
10
-2
10
-1
10
10
0
1
10
e (100 mA)
Ι
Ι
F
e
Ι
mA
2003-04-10 6
F 1235B F 1235C
Maßzeichnung
Chip Outlines
Maße werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as
follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform ation gen erally descri bes the type of compone nt and shall not be considered as assured ch aracteristic s or
detaile d sp ec if ic at ion.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substa nces. For info rm at ion on the types in qu es t ion please contact our sales organizatio n.
Handling and Storage Conditions:
The hermetically sealed shipment lot shall be opened under temperature and moisture controlled cleanroom
environment only. Customer has to follow the according rules for disposition of material that can be hazardous for
humans and environment.
Packing
Chips are placed on a blue f oil, wh ic h is fix ed in a yellow frame of 5 diameter.
For shipment the wafers of a shipment lot are arranged to stacks. The top and bottom of the stack is covered by a
dummy disk to protect the top and bottom wafer from damage. The whole package is fixed by rubber strings and
hermetically sealed in a plastic bag for storage and shipment. Please use the recycling operators known to you. We can
also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is
sorted. You will have to bear the costs of transport. For packing material that is returned to us unsorted or which we are
not oblig ed t o ac c ept , we shall have to invoic e y ou f or any costs incu rred.
Further Conditions:
If not otherwise arranged, the General Conditions for the supply of products and services of the electrical and
electronics industry apply for any shipment, just as the Supplier Addendum " Chip business" to the General Conditions
for the supply of products and services of the electrical and electronics industry. If this document is not familiar to you,
please request it at our nearest sales off ic e.
Com pon en ts used in life-support d evi ces or systems must be ex pressly autho rized by us for su ch purpose!
Critical components2), may only be used in life-support devices or systems3) with the express written approval of
OSRAM OS.
1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is no t a specified v alue.
2)A critical comp onent is a component used in a life-supp ort device or system whose fail ure can reasonably be expec ted to
cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
3)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
GMOY6179
0.205 (0.0081)
0.12 (0.0047)
p-contact
n-contact
0.2 (0.0079)