2N3963, 2N3964* MAXIMUM RATINGS on Rating Symbol | 2N3964 | 2N3963 | Unit , CASE 22-03, STYLE 1 Collector-Emitter Voltage VcEO -45 80 Vv TO-18 (TO-206AA) Collector-Base Voltage VcBo 45 80 Vv Emitter-Base Voltage VEBO -6.0 Vv Collector Current Continuous Ic 200 mA 3 Collector Total Device Dissipation Pp @ Ta = 25C 0.36 Watt Derate above 25C 2.06 mWPc Beco Total Device Dissipation Pp @ Tc = 25C 1.2 Watts 345 1 Emitter Derate above 25C ; 6.85 mWPPCc 1 Operating and Storage Junction Ty, Tstg 65 to +200 * Temperature Range : AMPLIFIER TRANSISTORS THERMAL CHARACTERISTICS . ; PNP SILICON Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Rea 486 C/W xThis is a Motorola 5 7 designated preferred device. Thermal Resistance, Junction to Case Rasc 146 "Cw ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Refer to 2N3799 for graphs. Characteristic | Symbol | Min Max Unit OFF CHARACTERISTICS _ ; Collector-Emitter Breakdown Voltage V(BR)CEO Vdc (Ic = ~5.0 mA) 2N3963 -80 _ 2N3964 -45 Collector-Emitter Breakdown Voltage V(BR) CES Vde {Ic = 10 pA) 2N3963 80 _ 2N3964 -4 _ Collector-Base Breakdown Voltage V(BRICBO Vde (Il = 10 A) 2N3963 80 -- 2N3964 ; 45 _- Emitter-Base Breakdown Voltage V(BR)JEBO -6.0 _ Vde (IE = 10 nA Collector Cutoff Current IcBo nAdc (VcE = 40V) 2N3964 _ -10 (VcE = -70 V) 2N3963 _ 10 Collector Cutoff Current Ices nAdc (VcE = -70V} 2N3963 ~ ~10 (VcE = 40 Vv) 2N3964 ; _ -10 Emitter Cutoff Current lEBO -10 nAdc (VER = 4.0V} ON CHARACTERISTICS _ DC Current Gain hee (lc = -10 nA, Veg = 5.0V) 2N3963 100 300 2N3964 250 500 {Ic = -100 nA, Vee = -5.0 V) 2N3963 100 _ 2N3964 250 _ (l = -1.0 mA, VceE = -5.0) 2N3963 100 450 2N3964 250 600 (lc = 10 A, Vog = 5.0, Ta = 55C) 2N3963 40 2N3964 100 _ (continued) Motorola Small-Signal Transistors, FETs and Diodes Device Data 3-752N3963, 2N3964 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit DC Current Gain continued (lc = -1.0 mA, Vcg = -5.0 V, Ta = 100C)) 2N3963 600 2N3964 _ 800 (lc = 1.0 pA, Vee = 5.0V) 2N3963 60 _ 2N3964 180 _ (lc = -10 2A, Vce = 5.0 V) 2N3963 100 _ 2N3964 200 _ (ic = -50 mA, Vcg = 5.0)(1} 2N3963 90 = 2N3964 180 _ (lc = 50 mA, Vce = 5.0, Ta = 55C)(1} 2N3963 45 2N3964 90 _ Collector-Emitter Saturation Voltage VcEfsat) (ic = -10 mA, Ip = 0.5 mA){1) _ 0.25 v (l = 50 mA, Ip = 5.0 mA){1) -0.4 Vv Base-Emitter Saturation Voltage VBEfsat) {l = 10 mA, Ip = 0.5 mA}(1) 0.9 v {Ic = 50 mA, !p = 5.0 mA}(1} _ 0.95 Vv SMALL-SIGNAL CHARACTERISTICS Ouput Capacitance Cobo 6.0 pF (Veg = 5.0 V, f = 1.0 MHz) Input Capacitance Cibo 15 pF (Vep = 0.5 V, f = 1.0 MHz} Input Impedance hie ko (lc = 1.0 mA, Veg = -5.0 V, f = 1.0 kHz) 2N3963 2.5 17 2N3964 6.0 20 Voltage Feedback Ratio hre 10 10-4 {l = -1.0 mA, Vee = 5.0, f = 1.0 kHz} Small Signal Current Gain hfe {ic = -1.0 mA, Vee = 5.0 V, f = 1.0 kHz) 2N3963 100 550 _ 2N3964 250 700 _ Magnitude of Forward Current Transfer Ratio, Common-Emitter [heel (Ic = -0.5 mA, VcE = 5.0 V, f = 20 MHz} 2N3963 . 2.0 8.0 ; 2N3964 2.5 8.0 _ Output Admittance - hoe umhos (Ic =-1.0 mA, Vcg = -5.0, f = 1.0 kHz) 2N3963 5.0 40 2N3964 5.0 50 Noise Figure : : NF dB (I = 20 mA, Veg = 5.0 V, BW = 15.7kHz) 2N3963 -_ 3 2N3964 _ 2 (i = -20 wA, Voce = 5.0 V, BW = 1.5 kHz, 2N3963 3 f = 10 kHz, Rg = 10 kM) 2N3964 _ 2 (lo = -20 pA, Vee = -5.0 V, BW = 150 Hz, 2N3963 _ 3 = 1.0 kHz, Rg = 10 kQ) 2N3964 - 2 (l = 20 pA, Voge = 5.0 V, BW = 15 Hz, 2N3963 - _ 10 f = 100 Hz, Rg = 10 hQ) 2N3964 _ 4 (lc = -20 A, VceE = 5,0 V, BW = 2.0 Hz, 2N3964 8 f = 10 Hz, Rg = 10 kQ) (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 3-76 Motorola Small-Signal Transistors, FETs and Diodes Device Data