Motion SPM) 5 Series FSB50325A, FSB50325AT, FSB50325AS General Description The FSB50325A/AT/AS is an advanced Motion SPM 5 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC and PMSM motors. These modules integrate optimized gate drive of the built-in MOSFETs (FRFET(R) technology) to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts and thermal monitoring. The built-in high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal MOSFETs. Separate open-source MOSFET terminals are available for each phase to support the widest variety of control algorithms. Features * UL Certified No. E209204 (UL1557) * 250 V RDS(on) = 1.7 (Max) FRFET MOSFET 3-Phase Inverter www.onsemi.com SPM5E*023 / 23LD, PDD STD, FULL PACK, DIP TYPE CASE MODEJ SPM5G*023 / 23LD, PDD STD, FULL PACK, DOUBLE DIP TYPE (BSH) CASE MODEL with Gate Drivers and Protection * Built-in Bootstrap Diodes Simplify PCB Layout * Separate Open-Source Pins from Low-Side MOSFETs for * * * * * * * Three-Phase Current-Sensing Active-HIGH Interface, Works with 3.3 / 5 V Logic, Schmitt-trigger Input Optimized for Low Electromagnetic Interference HVIC Temperature-Sensing Built-in for Temperature Monitoring HVIC for Gate Driving and Under-Voltage Protection Isolation Rating: 1500 Vrms / 1 min. Moisture Sensitive Level (MSL) 3 - FSB50325AS These Devices are Pb-Free and are RoHS Compliant SPM5H*023 / 23LD, PDD STD, SPM23*BD (Ver1.5) SMD TYPE CASE MODEM MARKING DIAGRAM $Y FSB50325x &Z&K&E&E&E&3 Applications * 3-Phase Inverter Driver for Small Power AC Motor Drives Related Source * RD-FSB50450A - Reference Design for Motion SPM 5 Series Ver.2 * AN-9082 - Motion SPM5 Series Thermal Performance by Contact * Pressure AN-9080 - User's Guide for Motion SPM 5 Series V2 $Y = ON Semiconductor Logo FSB50325x = Specific Device Code (x = A, AT, AS) &Z = Assembly Plant Code &K = 2-Digits Lot Run Traceability Code &E = Designate Space &3 = 3-Digits Data Code Format ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2019 October, 2019 - Rev. 3 1 Publication Order Number: FSB50325A/D FSB50325A, FSB50325AT, FSB50325AS ORDERING INFORMATION Device Marking Package Shipping FSB50325A FSB50325A SPM5E-023 (Pb-Free) 270 / Tube FSB50325AT FSB50325AT SPM5G-023 (Pb-Free) 180 / Tube FSB50325AS FSB50325AS SPM5H-023 (Pb-Free) 450 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Condition 1 Rating Unit 250 V INVERTER PART (each MOSFET unless otherwise specified.) VDSS Drain-Source Voltage of Each MOSFET *ID 25 Each MOSFET Drain Current, Continuous TC = 25C 1.7 A *ID 80 Each MOSFET Drain Current, Continuous TC = 80C 1.3 A *IDP Each MOSFET Drain Current, Peak TC = 25C, PW < 100 ms 4.4 A *IDRMS Each MOSFET Drain Current, Rms TC = 80C, FPWM < 20 kHz 0.9 Arms Maximum Power Dissipation TC = 25C, For Each MOSFET 12.3 W *PD CONTROL PART (each HVIC unless otherwise specified.) VCC Control Supply Voltage Applied Between VCC and COM 20 V VBS High-side Bias Voltage Applied Between VB and VS 20 V VIN Input Signal Voltage Applied Between IN and COM -0.3~VCC + 0.3 V 250 V BOOTSTRAP DIODE PART (each bootstrap diode unless otherwise specified.) VRRMB Maximum Repetitive Reverse Voltage * IFB Forward Current TC = 25C 0.5 A * IFPB Forward Current (Peak) TC = 25C, Under 1 ms Pulse Width 1.5 A Each MOSFET under Inverter Operating Condition (Note 1) 10.2 C/W THERMAL RESISTANCE RJC Junction to Case Thermal Resistance TOTAL SYSTEM Operating Junction Temperature -40~150 C TSTG Storage Temperature -40~125 C VISO Isolation Voltage 1500 Vrms TJ 60 Hz, Sinusoidal, 1 Minute, Connect Pins to Heat Sink Plate Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. For the measurement point of case temperature TC, please refer to Figure 4. 2. Marking " * " is calculation value or design factor. www.onsemi.com 2 FSB50325A, FSB50325AT, FSB50325AS PIN DESCRIPTION Pin No. Pin Name Description 1 COM IC Common Supply Ground 2 VB(U) Bias Voltage for U-Phase High-Side MOSFET Driving 3 VCC(U) Bias Voltage for U-Phase IC and Low-Side MOSFET Driving 4 IN(UH) Signal Input for U-Phase High-Side 5 IN(UL) Signal Input for U-Phase Low-Side 6 N.C No Connection 7 VB(V) Bias Voltage for V-Phase High Side MOSFET Driving 8 VCC(V) Bias Voltage for V-Phase IC and Low Side MOSFET Driving 9 IN(VH) Signal Input for V-Phase High-Side 10 IN(VL) Signal Input for V-Phase Low-Side 11 VTS 12 VB(W) 13 VCC(W) Bias Voltage for W-Phase IC and Low-Side MOSFET Driving 14 IN(WH) Signal Input for W-Phase High-Side 15 IN(WL) Signal Input for W-Phase Low-Side 16 N.C 17 P 18 U, VS(U) 19 NU Negative DC-Link Input for U-Phase 20 NV Negative DC-Link Input for V-Phase 21 V, VS(V) Output for HVIC Temperature Sensing Bias Voltage for W-Phase High-Side MOSFET Driving No Connection Positive DC-Link Input 22 NW 23 W, VS(W) Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving Negative DC-Link Input for W-Phase Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving (1) COM (2) VB(U) (17) P (3) VCC(U) VCC VB (4) IN(UH) HIN HO (5) IN(UL) LIN VS COM LO (18) U, VS(U) (6) N.C (19) N U (7) VB(V) (8) VCC(V) VCC VB (9) IN(VH) HIN HO (10) IN (VL) LIN VS COM LO (11) V TS (20) N V (21) V, VS(V) VTS (12) V B(W) (13) VCC(W) VCC VB (14) IN (WH) HIN HO (15) IN (WL) LIN VS COM LO (22) N W (23) W, VS(W) (16) N.C Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) NOTE: 3. Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside Motion SPM 5 product. External connections should be made as indicated in Figure 3. www.onsemi.com 3 FSB50325A, FSB50325AT, FSB50325AS ELECTRICAL CHARACTERISTICS (TJ = 25C, VCC = VBS = 15 V unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit 250 - - V INVERTER PART (each MOSFET unless otherwise specified.) Drain - Source Breakdown Voltage VIN = 0 V, ID = 1 mA (Note 4) Zero Gate Voltage Drain Current VIN = 0 V, VDS = 250 V - - 1 mA Static Drain - Source Turn-On Resistance VCC = VBS = 15 V, VIN = 5 V, ID = 1.0 A - 1.1 1.7 VSD Drain - Source Diode Forward Voltage VCC = VBS = 15V, VIN = 0 V, ID = -1.0 A - - 1.2 V tON Switching Times VPN = 150 V, VCC = VBS = 15 V, ID = 1.0 A VIN = 0 V e 5 V, Inductive Load L = 3 mH High- and Low-Side MOSFET Switching (Note 5) - 810 - ns - 600 - ns BVDSS IDSS RDS(on) tOFF - 140 - ns EON trr - 40 - mJ EOFF - 10 - mJ RBSOA Reverse Bias Safe Operating Area VPN = 200 V, VCC = VBS = 15 V, ID = IDP, VDS = BVDSS, TJ = 150C High- and Low-Side MOSFET Switching (Note 6) Full Square CONTROL PART (each HVIC unless otherwise specified.) IQCC Quiescent VCC Current VCC = 15 V, VIN = 0 V Applied Between VCC and COM - - 200 A IQBS Quiescent VBS Current VBS = 15 V, VIN = 0V Applied Between VB(U) - U, VB(V) - V, VB(W) - W - - 100 A Low-Side Under-Voltage Protection (Figure 8) VCC Under-Voltage Protection Detection Level 7.4 8.0 9.4 V VCC Under-Voltage Protection Reset Level 8.0 8.9 9.8 V High-Side Under-Voltage Protection (Figure 9) VBS Under-Voltage Protection Detection Level 7.4 8.0 9.4 V VBS Under-Voltage Protection Reset Level 8.0 8.9 9.8 V VTS HVIC Temperature Sensing Voltage Output VCC = 15 V, THVIC = 25C (Note 7) 600 790 980 mV VIH ON Threshold Voltage Logic HIGH Level - - 2.9 V VIL OFF Threshold Voltage Logic LOW Level 0.8 - - V UVCCD UVCCR UVBSD UVBSR Applied between IN and COM BOOTSTRAP DIODE PART (each bootstrap diode unless otherwise specified.) VFB Forward Voltage IF = 0.1 A, TC = 25C (Note 8) - 2.5 - V trrB Reverse Recovery Time IF = 0.1 A, TC = 25C - 80 - ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM 5 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 5. tON and tOFF include the propagation delay of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applications due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7. 6. The peak current and voltage of each MOSFET during the switching operation should be included in the Safe Operating Area (SOA). Please see Figure 7 for the RBSOA test circuit that is same as the switching test circuit. 7. Vts is only for sensing-temperature of module and cannot shutdown MOSFETs automatically. 8. Built-in bootstrap diode includes around 15 resistance characteristic. Please refer to Figure 2. www.onsemi.com 4 FSB50325A, FSB50325AT, FSB50325AS RECOMMENDED OPERATING CONDITIONS Symbol Parameter Conditions Typ Max Unit 150 200 V 13.5 15.0 16.5 V Applied Between VB and VS 13.5 15.0 16.5 V Applied Between IN and COM 3.0 VCC V 0 0.6 V VPN Supply Voltage Applied Between P and N VCC Control Supply Voltage Applied Between VCC and COM VBS High-Side Bias Voltage VIN(ON) Input ON Threshold Voltage VIN(OFF) Input OFF Threshold Voltage Min tdead Blanking Time for Preventing Arm-Short VCC = VBS = 13.5~16.5 V, TJ 150C fPWM PWM Switching Frequency TJ 150C 1.0 s 15 kHz Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Built-in Bootstrap Diode VF - IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 11 VF [V] 12 13 14 15 Tc = 25C Figure 2. Built-in Bootstrap Diode Characteristics (Typical) These values depend on PWM control algorithm C1 +15 V * Example Circuit : V phase VDC HIN LIN Output Note Inverter Output 0 0 Z Both FRFET Off 0 1 0 Low side FRFET On C3 1 0 VDC High side FRFET On 1 1 Forbidden Shoot through Open Open Z Same as (0, 0) P MCU R5 C5 VCC VB HIN HO LIN VS COM LO V VTS 10 F C2 C4 N R3 One Leg Diagram of Motion SPM 5 Product * Example of Bootstrap Parameters C1 = C2 = 1 F Ceramic Capacitor Figure 3. Recommended MCU Interface and Bootstrap Circuit with Parameters NOTES: 9. Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above. 10. RC-coupling (R5 and C5) and C4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise. 11. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Bypass capacitors such as C1, C2 and C3 should have good high-frequency characteristics to absorb high-frequency ripple-current. www.onsemi.com 5 FSB50325A, FSB50325AT, FSB50325AS FSB50325AT FSB50325A Figure 4. Case Temperature Measurement NOTE: 12. Attach the thermocouple on top of the heat-sink of SPM 5 package (between SPM 5 package and heatsink if applied) to get the correct temperature measurement. 3.5 3.0 VTS [V] 2.5 2.0 1.5 1.0 0.5 0 1 2 3 4 5 6 7 THVIC [C] Figure 5. Temperature Profile of VTS (Typical) VIN VDS VIN Irr 120% of ID 100% of ID ID ID 10% of ID VDS tON trr tOFF (a) Turn-on (b) Turn-on Figure 6. Switching Time Definitions www.onsemi.com 6 FSB50325A, FSB50325AT, FSB50325AS C BS VCC ID VCC VB HIN HO LIN VS COM LO L V DC + V DS - VTS One Leg Diagram of Motion SPM 5 Product Figure 7. Switching and RBSOA (Single-pulse) Test Circuit (Low-side) Input Signal UV Protection Status Low-side Supply, VCC RESET DETECTION RESET UVCCR UVCCD MOSFET Current Figure 8. Under-Voltage Protection (Low-Side) Input Signal UV Protection Status High-side Supply, V BS RESET DETECTION UVBSR UVBSD MOSFET Current Figure 9. Under-Voltage Protection (High-Side) www.onsemi.com 7 RESET FSB50325A, FSB50325AT, FSB50325AS C1 (1) COM (2) V B(U) (17) P (3) V CC(U) R5 (4) IN(UH) (5) IN(UL) C5 C2 (6) N.C VCC VB HIN HO LIN VS COM LO (18) U, VS(U) C3 (19) N U (7) V B(V) (8) V CC(V) (9) IN(VH) Micom (10) IN(VL) (11) V TS VCC VB HIN HO LIN VS COM LO (20) N V (21) V, VS(V) M V TS (12) V B(W) (13) V CC(W) (14) IN(WH) (15) IN(WL) (16) N.C VDC VCC VB HIN HO LIN VS COM LO (22) N W (23) W, VS(W) C4 For current-sensing and protection 15 V Supply C6 R4 R3 Figure 10. Example of Application Circuit NOTES: 13. About pin position, refer to Figure 1. 14. RC-coupling (R5 and C5, R4 and C6) and C4 at each input of Motion SPM 5 product and MCU are useful to prevent improper input signal caused by surge-noise. 15. The voltage-drop across R3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-side MOSFET. For this reason, the voltage-drop across R3 should be less than 1 V in the steady-state. 16. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC. 17. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current. SPM and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SPM5E-023 / 23LD, PDD STD, FULL PACK, DIP TYPE CASE MODEJ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13543G DATE 31 JAN 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. SPM5E-023 / 23LD, PDD STD, FULL PACK, DIP TYPE PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SPM5G-023 / 23LD, PDD STD, FULL PACK, DOUBLE DIP TYPE (BSH) CASE MODEL ISSUE O DATE 31 JAN 2017 DOCUMENT NUMBER: STATUS: NEW STANDARD: 98AON13545G ON SEMICONDUCTOR STANDARD (c) Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 - Rev. 0 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. Case Outline Number: http://onsemi.com SPM5G-023 / 23LD, PDD STD,1FULL PACK, DOUBLE DIP TYPE (BSH) PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON13545G PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM FAIRCHILD MOD23DF TO ON SEMICONDUCTOR. REQ. BY D. GASTELUM. DATE 31 JAN 2017 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. (c) Semiconductor Components Industries, LLC, 2017 January, 2017 - Rev. O Case Outline Number: MODEL MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SPM5H-023 / 23LD, PDD STD, SPM23-BD (Ver1.5) SMD TYPE CASE MODEM ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13546G DATE 31 JAN 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. SPM5H-023 / 23LD, PDD STD, SPM23-BD (Ver1.5) SMD TYPE PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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