NPN Silicon Planar Medium Power Transistors ZTX454 ZTX455 DESCRIPTION These are plastic encapsulated, general purpose transistors deigned for small and medium signal amplification from d.c. to radio frequencies. Application areas include: audio frequency amplifiers, drivers and output = stages, oscillators and general purpose switching. The E-line package is formed by transfer moulding a silicone plastic specially selected to provide a rugged one-piece encapsulation resistant to severe environments and allow the high junction temperature operation normally associated with metal can devices. E-line encapsulated devices are approved for use in military, industrial and professional equipments. ABSOLUTE MAXIMUM RATINGS Plastic E-Line (TO-92 Compatible) Alternative lead configurations are available as plug-in replacements of TO-5/39 and TO-18 metal can types, and for surface mounting. Parameter Symbol ZTX454 | ZTX455 Unit Collector-base voltage Vego 140 160 Vv Collector-emitter voltage Vceo 120 140 Vv Emitter-base voltage Veso 5 Vv Peak pulse current (see note below) low 2 A Continuous direct current Ie 1 A Base current ls 200 mA Power dissipation at T,,,,= 25C Prot 1 Ww at Tease = 25C 2 Ww Operating and storage temp. range TT stg -55 to +200 C THERMAL CHARACTERISTICS Parameter Symbol Maximum Unit Thermal resistance: Junction to ambient Riny-amb) 175 C/W Junction to case hij-case} 87.5 C/W Note: Consult Safe Operating Area graph for conditions. SE59ZTX454 ZTX455 CHARACTERISTICS (at T,,,, = 25C unless otherwise stated). ZTX454 ZTX455 Parameter Symbol Min. [Typ. [Max. [Min.| Typ. |Max. Unit | Conditions Collector-base lego - - 10.1] - ~ | yA | Vgc =120V cut-off current - - - - | 0.1 | vA | Veg= 140V Emitter-base cut-off | lego - | [O11] - |} = 10.1] pA | Vegp=4v current Collector-emitter Veeisaty | ~ | | O71 | | 0.7] Vi [1le=150mA, Ig= 15mA saturation voltage - | - 1 - | - - | V |lg=200mA, Izp=20mA Collector-emitter Veeotsus)} 120} - (140); - | V dig=10mA sustaining voltage Static forward hee 100); | 300/100] | 300 Ice = 150mA, Veg = 10V* current transfer ratio 30; - | - |-]- 4] - I = 200mA, Voge = 1V" - |10} - | - | 10] - Io= 1A, Veg = 10V* Transition frequency | fr 100] - |100} | |MHz} Ie=50mA, Vee = 10V f = 100MHz Output capacitance | Coy, - | - | 15 | | - | 15 | pF | Veg=10V, f= 1MHz *Measured under pulsed conditions. Pulse width = 300us. Duty cycle< 2%. MAXtMUM DISSIPATION (WATTS) 0 -55 -40 -20 0 20 40 80 100 160 200 TEMPERATURE C 3754/2 Dissipation derating curve SE60ZTX454 ZTX455 COLLECTOR CURRENT Ic (AMPS) 200V COLLECTOR-EMITTER VOLTAGE Wee)VOLTS aoaan Safe operating area at T,,,= 25C (single-putse) i p70 pase- 10 EMITTER SATURATION VOLTAGE 9.9 Voc sat) (VOLTS) A, O8 a par ae 7 aT | 0-7 ae ae Lot] Leer 06 Ley | en 100yA mA 10mA 100mA 1A COLLECTOR CURRENT (Ic) Typical base-emitter saturation voltage plotted against collector current ZTX454/5/7/86 SE61ZTX454 ZTX455 oO COLLECTOR- EMITTER SATURATION VOLTAGE Vee (sat) {VOLTS) 01 ImA 100mA 1A COLLECTOR CURRENT (Ic) 21X654/5/7/86 Typical colector-emitter saturation voltage plotted against collector current NORMALISED STATIC FORWARD CURRENT TRANSFER RATIO % h FE ImA mA OmA 1A COLLECTOR CURRENT (1c) Z1X654/5/7/ 86 Typical static forward current transfer ratio plotted against collector current SE62ZTX454 ZTX455 VeeslOV BASE- EMITTER TURN-ON VOLTAGE Var 1ON) (VOLTS) 100 pA ImA 10mA 100mA 1A COLLECTOR CURRENT (Ic) ZTX4S 0/5/7166 Typicai base-emitter turn-on voitage plotted against collector current gas td ns 00 200 mA 50mA 100mA 1A TUNES 4/5/7186 Typical switching speeds SE63ZTX454 ZTX455 TRANSIENT THERMAL IMPEDANCE C/W 120 100us ims 10ms 100ms PULSE WIDTH Maximum transient thermal impedance curves SE64