SEMICONDUCTORS
SUMMARY
V(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage power management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT23 package
APPLICATIONS
•DC-DC converters
•Power Management functions
•Disconnect switches
•Motor control
DEVICE MARKING
•7N1
ZXMN10A07F
ISSUE 5 - JULY 2003
100V N-CHANNEL ENHANCEMENT MODE MOSFET
1
Top View
PINOUT
SOT23
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY
PER REEL
ZXMN10A07FTA 7” 8mm 3000 units
ZXMN10A07FTC 13” 8mm 10000 units
ORDERING INFORMATION
ZXMN10A07F
SEMICONDUCTORS
ISSUE 5 - JULY 2003
2
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current @ VGS=10V; TA=25°C(b)
@V
GS=10V; TA=70°C(b)
@V
GS=10V; TA=25°C(a)
ID0.8
0.6
0.7
A
Pulsed Drain Current (c) IDM 3.5 A
Continuous Source Current (Body Diode) (b) IS0.5 A
Pulsed Source Current (Body Diode)(c) ISM 3.5 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD625
5
mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD806
6.4
mW
mW/°C
Operating and Storage Temperature Range Tj;Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R⍜JA 200 °C/W
Junction to Ambient (b) R⍜JA 155 °C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t ⱕ5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
CHARACTERISTICS
ZXMN10A07F
SEMICONDUCTORS
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ZXMN10A07F
SEMICONDUCTORS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 100 V ID=250␮A, VGS=0V
Zero Gate Voltage Drain Current IDSS 1␮AV
DS=100V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 2.0 4.0 V ID=250␮A, VDS=VGS
Static Drain-Source On-State
Resistance (1) RDS(on) 0.7
0.9
⍀
⍀
VGS=10V, ID=1.5A
VGS=6V, ID=1A
Forward Transconductance (1) (3) gfs 1.6 S VDS=15V,ID=1A
DYNAMIC (3)
Input Capacitance Ciss 138 pF
VDS=50V,V
GS=0V,
f=1MHz
Output Capacitance Coss 12 pF
Reverse Transfer Capacitance Crss 6pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.8 ns
VDD=50V, ID=1A
RG=6.0⍀,V
GS=10V
Rise Time tr1.5 ns
Turn-Off Delay Time td(off) 4.1 ns
Fall Time tf2.1 ns
Total Gate Charge Qg2.9 nC
VDS=50V,VGS=10V,
ID=1A
Gate-Source Charge Qgs 0.7 nC
Gate-Drain Charge Qgd 1nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.85 0.95 V Tj=25°C, IS=1.5A,
VGS=0V
Reverse Recovery Time (3) trr 27 ns Tj=25°C, IS=1.8A,
di/dt=100A/µs
Reverse Recovery Charge (3) Qrr 12 nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ300µs; duty cycle ⱕ2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN10A07F
SEMICONDUCTORS
ISSUE 5 - JULY 2003
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TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
ZXMN10A07F
SEMICONDUCTORS
ISSUE 5 - JULY 2003
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ZXMN10A07F
SEMICONDUCTORS
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex plc 2003
ISSUE 5 - JULY 2003
7
PACKAGE OUTLINE PAD LAYOUT
DIM MILLIMETRES INCHES DIM MILLIMETRES INCHES
MIN MAX MIN MAX MIN MAX MIN MAX
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
Cᎏ1.10 ᎏ0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM ␸10⬚TYP 10⬚TYP
PACKAGE DIMENSIONS
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.