G E SOLID STATE 01 pe fss7soa1 corre 27 3875081 GE SOLID STATE O1E 17962 oD TT. 3564 Signal Transistors GES2221, GES2222, MPS$2222, PN2222 Silicon Transistors Features: Performance comparable to hermetic units High Gain = Low Vorsary = High Frequency "= Medium Voltage TO-92 The GE/RCA GES2221, GES2222, MPS 2222 and PN2292 driver applications. The PN, MPS, and GES prefixes can be ; are planar passivated epitaxial NPN silicon devices specifi- _ used interchangeably, characteristics for each line are simi- cally developed for high speed switching, amplifier and core lar. These types are supplied in JEDEC TO-92 package. MAXIMUM RATINGS, Absolute-Maximum Values: GES2222 MPS2222 GES2221 PN2222 GOLLECTOR TO EMITTER VOLTAGE (VCE) cere eee eee ce ceeenreueneeerenseeucransenacnanuee 30 30 v COLLECTOR TO EMITTER VOLTAGE (VOEQ eee cece cece eee sees ecne ete eaeeenee tee ce ence. 40 40 v EMITTER TO BASE VOLTAGE (VEBO)- eee eee cece eter cece teat et ientetnateneeienccce, 5 5 Vv COLLECTOR TO BASE VOLTAGE (VOBO) cece cece cet ce tere e ete ertestenenveneteterncce, 60 60 Vv CONTINUOUS COLLECTOR CURRENT Co) 400 400 mA COLLECTOR CURRENT (pulsed)* (he eee c cece e cece cee cere e tee taenseeretenetnbereencs, 800 800 mA TOTAL POWER DISSIPATION To S 25C (Pq)... eee ees ee eee ees see 1 1 Ww TOTAL POWER DISSIPATION Ta < 25C (Pr). c ere ee ccc cece eee eee oe = 0.86 0.36 Ww DERATE FACTOR, Tg > 25C 00. eee cece cence eeeecc cence ee, vee 10 10 mWiec DERATE FACTOR, Ta > 25C ..... 3.6 3.6 mwiG OPERATING TEMPERATURE (T,) . . ~65to +125 c STORAGE TEMPERATURE (T, STG) steer cece eecs eet ce eet ecteseciesseneetecieeneree ce. . -65to +200 C LEAD TEMPERATURE 16 + 1/82" (1.58mm + 0.8mm) from case at 10s MAK. (TL) occ ce ees ec eee enveee +260 C *Pulsed conditions: 10ps pulse width, <2% duty cycle. File Number 2068G E SOLID STATE 01 de fjsa7soa1 ooze 9 ~ i eo - Signal Transistors GES2221, GES2222, MPS2222, PN2222 T:35-/7 ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T a) = 25C Unless Otherwise Specified LIMITS CHARACTERISTICS SYMBOL GES2221 GES2222, MPS2222, UNITS PN2222 MIN. MAX. MIN. MAX Collector-Emitter Breakdown Voltage (le = 10mA, Ip = 0)* VipRicEO 30 _ 30 _ Emitter-Base Breakdown Voltage (ie = 10pA, Iq = 0) ViBREBO 5 - 5 - Collector-Base Breakdown Voltage (Ig = 10pA, Ip = 0) _Viprjcso 60 - 60 - Collector-Emitter Breakdown Voltage (lg = 10pA, Vag = 0) Viprices 40 - 40 - Vv Collector-Emitter Saturation Voltage (lg = 150mA, lp = 15mA}* Vogsar) _ 0.3 - 0.3 (tg = 500mA, Ig = 50mA)* - 1.2 - 1.2 Base-Emitter Saturation Voltage (le = 150mA, Ip = 15mA)* VBE(SAT) - iA _ iA (ig = 500mA, Ig = 50mA)* - 24 - 2.4 DC Forward Current Transfer Ratio (ce = 1V, Ig = 150mA)* 20 - 50 = WVcg = 10V, Ip = 0.1mA) 20 - 35 - (Vog = 10V, Ig = 1.0mA) hee 25 - 50 - - (Vog = 10V, Ip = 10mA)* 35 - 75 - (cE = 10V Ig = 150mA) 40 120 100 300 (Voge = 10V, Io = 500mA)* 20 - 30 - Collector Cutoff Currant (Veg = 50V, Ip = 0)* logo - 10 - 10 nA (Veg = 50V, te = 0, Ta = 100C)* - 10 - 10 pA Emitter-Base Reverse Current (Veg = 3V, Io = 0) _leso - 50 _ 50 nA Gain Bandwidth Product (Voce = 20V, Io = 20mA, f = 100MHz) fy 250 - 250 _ MHz Collector-Base Capacitance Vea = 10V, le = 0, f = 1MHz) Cop _ 8 - 8 Emitter-Base Capacitance pF (Veg = 0.5V, io = 0,f = 1MHz) Cop - 25 - 25 *Pulse conditions: < 300us pulse width, < 2% duty cycle. TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Base Lead 3 - Collector 67