Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
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1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS303PD.
1.2 Features
nLow collector-emitter saturation voltage VCEsat
nHigh collector current capability IC and ICM
nHigh collector current gain (hFE) at high IC
nHigh efficiency due to less heat generation
nSmaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
nHigh-voltage DC-to-DC conversion
nHigh-voltage MOSFET gate driving
nHigh-voltage motor control
nHigh-voltage power switches (e.g. motors, fans)
nThin Film Transistor (TFT) backlight inverter
nAutomotive applications
1.4 Quick reference data
[1] Device mounted on a ceramic PCB, Al2O3 standard footprint.
[2] Pulse test: tp300 µs; δ≤0.02.
PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 02 — 14 December 2007 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 60 V
ICcollector current [1] --3A
ICM peak collector current single pulse;
tp1ms --6A
RCEsat collector-emitter
saturation resistance IC=2A;
IB= 200 mA [2] - 6890m
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 2 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
Table 2. Pinning
Pin Description Simplified outline Symbol
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
132
4
56
sym014
1, 2, 5, 6
4
3
Table 3. Ordering information
Type number Package
Name Description Version
PBSS303ND SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS303ND AE
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 3 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Pulse test: tp10 ms; δ≤10 %.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 60 V
VEBO emitter-base voltage open collector - 5 V
ICcollector current [1] -1A
[2] -3A
ICM peak collector current single pulse;
tp1ms -6A
IBbase current - 0.8 A
IBM peak base current single pulse;
tp1ms -2A
Ptot total power dissipation Tamb 25 °C[1] - 360 mW
[3] - 600 mW
[4] - 750 mW
[2] - 1.1 W
[1][5] - 2.5 W
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 4 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Pulse test: tp10 ms; δ≤10 %.
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
(1)
Tamb (°C)
75 17512525 7525
006aaa270
800
400
1200
1600
Ptot
(mW)
0
(2)
(4)
(3)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 350 K/W
[2] - - 208 K/W
[3] - - 167 K/W
[4] - - 113 K/W
[1][5] --50K/W
Rth(j-sp) thermal resistance from
junction to solder point --45K/W
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 5 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa271
10
1
102
103
Zth(j-a)
(K/W)
101
10510102
104102
101tp (s)
103103
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa272
10
1
102
103
Zth(j-a)
(K/W)
101
10510102
104102
101tp (s)
103103
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
0
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 6 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al2O3, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa273
10
1
102
103
Zth(j-a)
(K/W)
101
10510102
104102
101tp (s)
103103
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa751
10
1
102
103
Zth(j-a)
(K/W)
101
10510102
104102
101tp (s)
103103
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
0
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 7 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-basecut-off
current VCB =60V; I
E= 0 A - - 100 nA
VCB =60V; I
E=0A;
Tj= 150 °C--50µA
ICES collector-emitter
cut-off current VCE =48V; V
BE = 0 V - - 100 nA
IEBO emitter-base cut-off
current VEB =5V; I
C= 0 A - - 100 nA
hFE DC current gain VCE =2V; I
C= 0.5 A 345 570 -
VCE =2V; I
C=1A [1] 315 530 -
VCE =2V; I
C=2A [1] 250 380 -
VCE =2V; I
C=3A [1] 120 185 -
VCE =2V; I
C=4A [1] 60 95 -
VCE =2V; I
C=5A [1] 35 60 -
VCE =2V; I
C=6A [1] 20 40 -
VCEsat collector-emitter
saturation voltage IC= 0.5 A; IB= 50 mA - 40 55 mV
IC= 1 A; IB= 50 mA - 80 105 mV
IC= 2 A; IB= 200 mA [1] - 135 180 mV
IC= 3 A; IB= 150 mA [1] - 210 280 mV
IC= 3 A; IB= 300 mA [1] - 195 260 mV
IC= 4 A; IB= 400 mA [1] - 255 340 mV
IC= 5 A; IB= 0.5 A [1] - 320 425 mV
IC= 6 A; IB= 0.6 A [1] - 385 515 mV
RCEsat collector-emitter
saturation resistance IC= 2 A; IB= 200 mA [1] - 6890m
VBEsat base-emitter
saturation voltage IC= 0.5 A; IB= 50 mA - 0.79 0.88 V
IC= 1 A; IB= 50 mA - 0.81 0.89 V
IC= 1 A; IB= 100 mA [1] - 0.83 0.92 V
IC= 3 A; IB= 150 mA [1] - 0.92 0.99 V
IC= 3 A; IB= 300 mA [1] - 0.95 1.02 V
VBEon base-emitter turn-on
voltage VCE =2V; I
C= 2 A - 0.79 1 V
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 8 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
[1] Pulse test: tp300 µs; δ≤0.02.
tddelay time VCC = 9.2 V; IC= 2 A;
IBon = 0.1 A;
IBoff =0.1 A
-12-ns
trrise time - 103 - ns
ton turn-on time - 115 - ns
tsstorage time - 401 - ns
tffall time - 264 - ns
toff turn-off time - 665 - ns
fTtransition frequency VCE =10V;
IC= 100 mA;
f = 100 MHz
- 140 - MHz
Cccollector capacitance VCB =10V;I
E=i
e=0A;
f=1MHz -33-pF
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 9 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
VCE =2V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =55 °C
Tamb =25°C
Fig 6. DC current gain as a function of collector
current; typical values Fig 7. Collector current as a function of
collector-emitter voltage; typical values
VCE =2V
(1) Tamb =55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=20
(1) Tamb =55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
006aaa703
400
800
1200
hFE
0
IC (mA)
101104
103
110
2
10
(1)
(2)
(3)
VCE (V)
0 2.01.60.8 1.20.4
006aaa704
2
4
6
IC
(A)
0
144
128
112
96
80
IB = 160 mA
16
32
48
64
006aaa705
0.4
0.8
1.2
VBE
(V)
0
IC (mA)
101104
103
110
2
10
(1)
(2)
(3)
006aaa706
0.4
0.8
1.2
VBEsat
(V)
0
IC (mA)
101104
103
110
2
10
(1)
(2)
(3)
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 10 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =55 °C
Tamb =25°C
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =55 °C
Tamb =25°C
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa707
101
102
1
VCEsat
(V)
103
IC (mA)
101104
103
110
2
10
(1)
(2)
(3)
006aaa708
101
102
1
VCEsat
(V)
103
IC (mA)
101104
103
110
2
10
(1)
(2)
(3)
006aaa709
IC (mA)
101104
103
110
2
10
101
1
10
102
RCEsat
()
102
(1)
(2)
(3)
IC (mA)
101104
103
110
2
10
006aaa710
1
101
102
10
103
RCEsat
()
102
(1)
(2)
(3)
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 11 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
8. Test information
Fig 14. BISS transistor switching time definition
VCC = 9.2 V; IC= 2 A; IBon = 0.1 A; IBoff =0.1 A
Fig 15. Test circuit for switching times
006aaa003
IBon (100 %)
IB
input pulse
(idealized waveform)
IBoff
90 %
10 %
IC (100 %)
IC
tdton
90 %
10 %
tr
output pulse
(idealized waveform)
tf
t
ts
toff
RC
R2
R1
DUT
mlb826
Vo
RB(probe)
450
(probe)
450
oscilloscope oscilloscope
VBB
VI
VCC
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 12 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 16. Package outline SOT457 (SC-74)
04-11-08Dimensions in mm
3.0
2.5 1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type
number Package Description Packing quantity
3000 10000
PBSS303ND SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 13 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
11. Soldering
Dimensions in mm
Fig 17. Reflow soldering footprint SOT457 (SC-74)
Dimensions in mm
Fig 18. Wave soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
solder paste
0.95
2.825 0.45 0.55
1.60
1.95
3.45
1.70
3.10
3.20
3.30
msc422
1.40
4.30
5.30
0.45
msc423
1.45 4.45
5.05
solder lands
solder resist
occupied area
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 14 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS303ND_2 20071214 Product data sheet - PBSS303ND_1
Modifications: The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 6: typing error for maximum value on 6 cm2 footprint amended
Section 13 “Legal information”: updated
PBSS303ND_1 20060406 Product data sheet - -
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 15 of 16
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 December 2007
Document identifier: PBSS303ND_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 11
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
10 Packing information. . . . . . . . . . . . . . . . . . . . . 12
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
14 Contact information. . . . . . . . . . . . . . . . . . . . . 15
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16