SuperFET FCP16N60 / FCPF16N60 TM 600V N-Channel MOSFET Features Description * 650V @TJ = 150C SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. * Typ. Rds(on) = 0.22 * Ultra low gate charge (typ. Qg=55nC) * Low effective output capacitance (typ. Coss.eff=110pF) * 100% avalanche tested * RoHS Compliant D G G DS TO-220 FCP Series TO-220F GD S FCPF Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed FCP16N60 FCPF16N60 600 (Note 1) Unit V 16 10.1 16* 10.1* A A 48 48* A 30 V 450 mJ VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 16 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds (TC = 25C) - Derate above 25C 4.5 V/ns 167 1.33 37.9 0.3 W W/C -55 to +150 C 300 C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP16N60 FCPF16N60 Unit RJC Thermal Resistance, Junction-to-Case 0.75 3.3 C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W (c)2008 Fairchild Semiconductor Corporation FCP16N60 / FCPF16N60 Rev. B1 1 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET December 2008 Device Marking Device Package Reel Size Tape Width Quantity FCP16N60 FCP16N60 TO-220 - - 50 FCPF16N60 FCPF16N60 TO-220F - - 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A, TJ = 25C 600 -- -- V VGS = 0V, ID = 250A, TJ = 150C -- 650 -- V ID = 250A, Referenced to 25C -- 0.6 -- V/C BVDSS / TJ Breakdown Voltage Temperature Coefficient BVDSS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 16A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.22 0.26 -- 11.5 -- S -- 1730 2250 pF -- 960 1150 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 8A gFS Forward Transconductance VDS = 40V, ID = 8A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Crss Reverse Transfer Capacitance -- 85 -- pF Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 45 60 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 110 -- pF VDD = 300V, ID = 16A RG = 25 -- 42 85 ns -- 130 270 ns -- 165 340 ns -- 90 190 ns -- 55 70 nC -- 10.5 13 nC -- 28 -- nC -- -- 16 A Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 16A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS =16A -- -- 1.4 V trr Reverse Recovery Time 435 -- ns Reverse Recovery Charge VGS = 0V, IS = 16A dIF/dt =100A/s -- Qrr -- 7.0 -- C (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 16A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FCP16N60 / FCPF16N60 Rev. B1 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 1 10 o 150 C o 25 C o -55 C 0 10 *Note: 1. VDS = 40V *Notes : 1. 250s Pulse Test 2. 250s Pulse Test 2. TC = 25 C -1 0 10 2 1 10 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 10 IDR , Reverse Drain Current [A] RDS(ON) [], 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.6 Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 0.5 VGS = 10V 0.4 0.3 VGS = 20V 0.2 0.1 1 10 o 0 o 150 C 10 25 C *Notes : 1. VGS = 0V 2. 250 s Pulse Test o *Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 40 45 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 7000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 6000 VDS = 100V VGS, Gate-Source Voltage [V] Crss = Cgd Capacitance [pF] 5000 Coss 4000 3000 *Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz 2000 1000 0 -1 10 Crss 0 10 VDS = 250V VDS = 480V 8 6 4 2 *Note : ID = 16A 0 1 0 10 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 FCP16N60 / FCPF16N60 Rev. B1 10 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 *Notes : 1. VGS = 0 V 0.9 2. ID = 250 A Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 *Notes : 1. VGS = 10 V 0.5 2. ID = 8 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 o ID, Drain Current [A] ID, Drain Current [A] 10 us 1 ms DC 0 10 *Notes : o 1. TC = 25 C -1 10 100 us 1 ms 1 10 10 ms 100 ms 0 10 DC *Notes : o 1. TC = 25 C -1 10 o o 2. TJ = 150 C 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 -2 10 200 10 10 us 100 us 1 150 Operation in This Area is Limited by R DS(on) 2 10 100 Figure 9-2. Maximum Safe Operating Area for FCPF16N60 Operation in This Area is Limited by R DS(on) 2 50 TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FCP16N60 10 0 o TJ, Junction Temperature [ C] 0 10 1 2 10 10 3 10 0 1 10 10 2 10 10 3 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature [C] 4 FCP16N60 / FCPF16N60 Rev. B1 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCP16N60 / FCPF16N60 600V N-Channel MOSFET Figure 11-1. Transient Thermal Response Curve (FCP16N60) ZJC(t), Thermal Response 10 0 D = 0 .5 * N o te s : o 1 . Z JC (t) = 0 .7 5 C /W M a x. 0 .2 10 -1 2 . D u ty F a c to r, D = t 1 /t 2 0 .1 3 . T J M - T C = P D M * Z JC (t) PDM 0 .0 5 t1 0 .0 2 t2 0 .0 1 10 -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ZJC(t), Thermal Response Figure 11-2. Transient Thermal Response Curve (FCPF16N60) 10 1 10 0 D = 0 .5 0 .2 *N o te s : o 1 . Z J C (t) = 3 .3 C /W M a x . 0 .1 0 .0 5 10 -1 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .0 2 PDM 0 .0 1 t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 5 FCP16N60 / FCPF16N60 Rev. B1 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FCP16N60 / FCPF16N60 Rev. B1 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FCP16N60 / FCPF16N60 Rev. B1 www.fairchildsemi.com TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 0.80 0.10 2.54TYP [2.54 0.20] +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.40 0.20 10.00 0.20 Dimensions in Millimeters 8 FCP16N60 / FCPF16N60 Rev. B1 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 0.10 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters 9 FCP16N60 / FCPF16N60 Rev. B1 www.fairchildsemi.com FCP16N60 / FCPF16N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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