FCPF16N60 - Fairchild Semiconductor Corporation

FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

FCP16N60 / FCPF16N60

600V N-Channel MOSFET

Features

•650V @T

J = 150°C

•Typ. R

ds(on) = 0.22Ω

• Ultra low gate charge (typ. Qg=55nC)

• Low effective output capacitance (typ. Coss.eff=110pF)

• 100% avalanche tested

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

Absolute Maximum Ratings

Thermal Characteristics

TO-220

FCP Series

DTO-220F

FCPF Series

Symbol Parameter FCP16N60 FCPF16N60 Unit

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 16

10.1 16*

10.1* A

IDM Drain Current - Pulsed (Note 1) 48 48* A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ

IAR Avalanche Current (Note 1) 16 A

EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C)

- Derate above 25°C167

1.33 37.9

0.3 W

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 °C

Symbol Parameter FCP16N60 FCPF16N60 Unit

RθJC Thermal Resistance, Junction-to-Case 0.75 3.3 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

*Drain current limited by maximum junction temperature

December 2008

SuperFET

•RoHS Compliant

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FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 8A, VDD = 50V, RG = 25Ω, S t a r ting TJ = 25°C

3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FCP16N60 FCP16N60 TO-220 - - 50

FCPF16N60 FCPF16N60 TO-220F - - 50

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C600 -- -- V

VGS = 0V, ID = 250μA, TJ = 150°C-- 650 -- V

ΔBVDSS

/ ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 250μA, Referenced to 25°C-- 0.6 -- V/°C

BVDSS Drain-Source Avalanche Breakdown

Voltage VGS = 0V, ID = 16A -- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

VDS = 480V, TC = 125°C--

-- --

-- 1

10 μA

μA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10V, ID = 8A -- 0.22 0.26 Ω

gFS Forward Transconductance VDS = 40V, ID = 8A (Note 4) -- 11.5 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25V, VGS = 0V,

f = 1.0MHz -- 1730 2250 pF

Coss Output Capacitance -- 960 1150 pF

Crss Reverse Transfer Capacitance -- 85 -- pF

Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 45 60 pF

Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 110 -- pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300V, ID = 16A

RG = 25Ω

(Note 4, 5)

-- 42 85 ns

trTurn-On Rise Time -- 130 270 ns

td(off) Turn-Off Delay Time -- 165 340 ns

tfTurn-Off Fall Time -- 90 190 ns

QgTotal Gate Charge VDS = 480V, ID = 16A

VGS = 10V

(Note 4, 5)

-- 55 70 nC

Qgs Gate-Source Charge -- 10.5 13 nC

Qgd Gate-Drain Charge -- 28 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 16 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS =16 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 16A

dIF/dt =100A/μs (Note 4) -- 435 -- ns

Qrr Reverse Recovery Charge -- 7.0 -- μC

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FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100101

100

101

102

V GS

Top : 1 5 .0 V

10.0 V

8 .0 V

7 .0 V

6 .5 V

6 .0 V

Bottom : 5.5 V

*Notes :

1. 2 5 0 μs Pulse Test

2. T C = 25οC

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

100

101

102

*Note:

1. VDS = 40V

2. 250μs Pulse Test

-55oC

150oC

25oC

ID , Drain Current [A]

VGS , Ga te-Source Voltage [V ]

0 5 10 15 20 25 30 35 40 45 50

0.0

0.1

0.2

0.3

0.4

0.5

0.6

VGS = 20V

VGS = 10V

*Note : TJ = 25oC

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A] 0.20.40.60.81.01.21.41.6

100

101

102

25oC

150oC

*Notes :

1. VGS = 0V

2. 250 μs Pulse Test

IDR , Reverse Drai n Current [A]

VSD , Source-Drain Voltage [V]

10-1 100101

1000

2000

3000

4000

5000

6000

7000 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 102030405060

VDS = 250V

VDS = 10 0V

VDS = 480V

*Note : ID = 16A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

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FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9-1. Maximu m Saf e Op e rati n g Area Figure 9-2. Maximum Safe Operating Area

for FCP16N60 for FCPF16N60

Figure 10. Maximum Drain Current vs. Case Temperature

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

*Notes :

1. VGS = 0 V

2. ID = 250 μA

BVDSS, (Normalized)

Drai n-Sour ce Brea kdown Voltage

TJ, Junction Temperature [oC] -100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes :

1. VGS = 10 V

2. ID = 8 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

100101102103

10-2

10-1

100

101

102

10 us

Operation in This Area

is Limited by R DS(on)

1 ms

100 us

*Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

100101102103

10-2

10-1

100

101

102

100 ms

10 ms

10 us

Operation in This Area

is Limited by R DS(on)

1 ms

100 us

*Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 150

ID, Drain Cur r ent [A ]

TC, Case Temperature [°C]

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FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Figure 11-1. Transient Thermal Response Curve (FCP16N60)

Figure 11-2. Transient Thermal Response Curve (FCPF16N60)

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

*N otes :

1 . Z θJC(t) = 0 .75 oC/W Max.

2 . Duty F a c to r , D=t1/t2

3 . T JM - T C = PDM * Z θJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC(t), Thermal Response

t1, S q u a re Wa v e P u ls e D u ra tion [s e c]

PDM

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

101

*N o tes :

1 . Z θJC(t) = 3.3 oC/W Max.

2 . Duty F a c to r, D =t1/t2

3 . T JM - T C = PDM * Z θJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC(t), Thermal Response

t1, S q u a re Wa v e P u ls e D u ra tion [s e c]

PDM

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FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

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FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Mechanical Dimensions

4.50 ±0.20

9.90 ±0.20

1.52 ±0.10

0.80 ±0.10 2.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80 ±0.1015.90 ±0.20

10.08 ±0.30 18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

1.30 +0.10

–0.05

0.50 +0.10

–0.05

2.54TYP

[2.54 ±0.20]

2.54TYP

[2.54 ±0.20]

TO-220

Dimensions in Millimeters

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FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET

Mechanical Dimensions (Continued)

(7.00) (0.70)

MAX1.47

(30°)

3.30 ±0.10

15.80 ±0.20

15.87 ±0.20

6.68 ±0.20

9.75 ±0.30

4.70 ±0.20

10.16 ±0.20

(1.00x45°)

2.54 ±0.20

0.80 ±0.10

9.40 ±0.20

2.76 ±0.20

0.35 ±0.10

ø3.18 ±0.10

2.54TYP

[2.54 ±0.20]

2.54TYP

[2.54 ±0.20]

0.50 +0.10

–0.05

TO-220F

Dimensions in Millimeters

Rev. I37

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may change in any manner without notice.

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FCP16N60 / FCPF16N60 Rev. B1

FCP16N60 / FCPF16N60 600V N-Channel MOSFET