© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 3000 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 26 A
IC110 TC = 110°C 11 A
ICM TC = 25°C, 1ms 98 A
SSOA VGE = 15V, TVJ = 125°C, RG = 20Ω ICM = 98 A
(RBSOA) Clamped Inductive Load 1500 V
PCTC = 25°C 125 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
FCMounting Force 20..120 / 4.5..27 Nm/lb.in.
VISOL 50/60Hz, 1 Minute 4000 V~
Weight 5 g
DS100121C(10/12)
IXBF12N300
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 3000 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES, VGE = 0V 25 μA
Note 2, TJ = 125°C 1 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 12A, VGE = 15V, Note 1 2.8 3.2 V
TJ = 125°C 3.5 V
VCES = 3000V
IC110 = 11A
VCE(sat) ≤≤
≤≤
≤ 3.2V
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
(Electrically Isolated Tab)
1 = Gate 5 = Collector
2 = Emitter
ISOPLUS i4-PakTM
Isolated Tab
1
5
2
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
z4000V~ Electrical Isolation
zHigh Blocking Voltage
zHigh Peak Current Capability
zLow Saturation Voltage
Advantages
zLow Gate Drive Requirement
zHigh Power Density
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zCapacitor Discharge Circuits
z Uninterrupted Power Supplies(UPS)
zLaser Drivers
zAC Switches
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF12N300
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = 12A, VCE = 10V, Note 1 6.5 10.8 S
Cies 1290 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 56 pF
Cres 19 pF
Qg 62 nC
Qge IC = 12A, VGE = 15V, VCE = 1000V 13 nC
Qgc 8.5 nC
td(on) 64 ns
tr 140 ns
td(off) 180 ns
tf 540 ns
td(on) 65 ns
tr 395 ns
td(off) 175 ns
tf 530 ns
RthJC 1.00 °C/W
RthCS 0.15 °C/W
Resistive Switching Times, TJ = 125°C
IC = 12A, VGE = 15V
VCE = 1250V, RG = 10Ω
Resistive Switching Times, TJ = 25°C
IC = 12A, VGE = 15V
VCE = 1250V, RG = 10Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 12A, VGE = 0V 2.1 V
trr 1.4 μs
IRM 21 A
IF = 6A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
ISOPLUS i4-PakTM (HV) Outline
Pin 1 = Gate
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
© 2012 IXYS CORPORATION, All Rights Reserved
IXBF12N300
Fi g . 1. Ou t p u t C h ar ac ter i sti cs @ T
J
= 25ºC
0
4
8
12
16
20
24
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fi g . 2. Exte n d ed Ou tp ut Ch ar acte r i sti cs @ T
J
= 25ºC
0
40
80
120
160
200
240
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
10V
15V
20V
5V
Fi g . 3. Outpu t C h ar acter i sti cs @ T
J
= 125ºC
0
4
8
12
16
20
24
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Jun cti o n Temperatu r e
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 24A
I
C
= 12A
I
C
= 6A
Fi g . 5. C o llecto r -to-Emi tter Vo l tag e vs.
Gate-to-Emi t ter Vo l tag e
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
5 7 9 1113151719212325
V
GE
- Volts
V
CE
- Volts
I
C
= 24A
T
J
= 25ºC
6A
12A
Fig. 6. Input Admittance
0
4
8
12
16
20
24
28
32
36
40
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF12N300
Fig . 11. R ever se-Bi as Safe Operati n g Area
0
20
40
60
80
100
250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 20Ω
dv / dt < 10V / ns
Fig. 13. Maximum Transient Thermal Impedan ce
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig . 12. Maximu m Tra n si ent Thermal I mped a n ce
aaa
2
D = t
p
/ T
t
p
T
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
Fig. 7. T ransconductance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35 40 45
I
C
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1kV
I
C
= 12A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f = 1 MHz
Cies
Coes
Cres
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
4
8
12
16
20
24
28
32
36
00.511.522.53
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
© 2012 IXYS CORPORATION, All Rights Reserved
IXBF12N300
IXYS REF: B_12N300(4P)6-07-12-B
Fi g . 14 . R esi s ti ve Tu r n -o n R i se Time vs .
Collector Current
0
100
200
300
400
500
600
6 8 10 12 14 16 18 20 22 24
I
C
- Amperes
t
r - Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fig . 15. R esisti ve Tu r n-o n Swi tchi n g Ti mes vs.
Gate R esi stance
250
300
350
400
450
500
550
600
650
700
750
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
r - Nanoseconds
50
60
70
80
90
100
110
120
130
140
150
t d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 24A, 12A
Fi g. 16. R esi stive Tu r n-o ff Switchi n g Ti mes vs.
Jun ct i o n Temp er atu re
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
140
150
160
170
180
190
200
t d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 1250V
I
C
= 24A
I
C
= 12A
Fig . 17. R esi st i ve Turn -o ff Switch i n g Ti mes vs .
Collector Current
0
200
400
600
800
1000
1200
1400
6 8 10 12 14 16 18 20 22 24
I
C
- Amperes
t
f
- Nanoseconds
60
100
140
180
220
260
300
340
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC, 25ºC
Fi g . 13 . R esi s ti ve Turn -o n R i se Time vs .
Junction Temp eratu re
0
100
200
300
400
500
600
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r - Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 1250V
I
C
= 12A
I
C
= 24A
Fig . 18. R esi st i ve Turn -o ff Switch i n g Ti mes vs .
Gate Resistance
250
300
350
400
450
500
550
600
650
700
10 20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
800
900
t d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 24A
I
C
= 12A
