LHI 878 - Excelitas Technologies

Advanced sensor technologies

for today’s breakthrough applications.

PerkinElmer Optoelectronics provides Sensor, Lighting and Medical Imaging technologies

to speed the development of breakthrough applications for customers in industrial, safety

&security, consumer, automotive, medical, analytical and defense markets. With develop-

ment and manufacturing centers around the world, the company is able to leverage and

align global resources to serve customers through innovation and operational excellence.

With in-house sensor design and vertically integrated manufacturing including low-cost

packaging centers, PerkinElmer sells more than 150 million optical sensors each year.

Consistent with PerkinElmer Optoelectronics’ policy of continually updating and improv-

ing its products, the type designation and data aresubject to change, unless otherwise

arranged. No obligations are assumed for notice of change of future manufacture of these

devices or materials.

The PerkinElmer logo and design are registered trademarks of PerkinElmer, Inc. TPMI®,

Serinus™ and DigiPyro™ aretrademarks of PerkinElmer,Inc. or its subsidiaries, in the

United States and other countries. All other trademarks not owned by PerkinElmer, Inc.

or its subsidiaries that aredepicted herein are the property of their respective owners.

Information furnished by PerkinElmer Optoelectronics is believed to be accurate and

reliable. However,no responsibility is assumed by PerkinElmer Optoelectronics for its

use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent

right of PerkinElmer, Inc.

table of contents

Detectors

Thermopile Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Pyroelectric Infrared Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Photodiodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Phototransistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Infrared Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Photocells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Analog Optical Isolators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Channel Photomultipliers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Photon Counting Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Solid State Emitters

Infrared Emitting Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Laser Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Imaging Components

Line Scan Imagers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

CMOS Photodiode Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

CCD Linear Array Cameras . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Special Purpose CCD Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

Description

Thermopile detectors directly sense thermal radiation, providing

the perfect device for remotely measuring temperatures without

the need for any mechanical chopper. PerkinElmer’s proprietary

and innovative Si-based micromachining technology guarantees

a new generation of components: extreme long-term stability,

very low temperature coefficient in sensitivity, and excellent

repeatability of electro-optical parameters.

Thermopile sensors allow remote temperature sensing at a low

system cost. The sensor does not require cooling, and can reach

an accuracy of ±1°C, dependent on the measurement range.

For narrow temperature ranges, as in body temperature measure-

ment, a precision of 0.1°C is possible.

Thermopile Modules with Integrated Signal Processing:

TPMI®Series

For convenient use, PerkinElmer offers thermopile sensors with

an integrated electronic circuit for the necessary signal condi-

tion and ambient temperature compensation – the TPMI®. This

very compact and miniature thermopile module is offered as a

fully calibrated, ready-to-go sensor. Various temperature ranges

and optics are available.

Isothermal Housing

Fast temperature changes and temperature gradients are known

to influence the output signal of thermal radiation sensors such

as thermopiles and generate a measurement error. Therefore,

PerkinElmer has developed a novel housing concept with large

thermal mass and thermal conductivity. This sensor provides a

stable signal even in demanding industrial, automotive, or med-

ical applications such as ear thermometers, where high accuracy

is required while the sensor is exposed to external heat sources.

Single-Element Thermopile Detectors: TPS Series

The different available chip sizes and packaging types, together

with the variety in window openings with and without a silicon

lens, different filters, enable the adaptation of the PerkinElmer

thermopiles to virtually every application where a remote

temperature measurement or control is needed.

Dual- and Quad-Element Types: TPS 2, TPS 4 Series

PerkinElmer offers thermopile detectors with two or four channels,

each of which can be equipped with one of the many available

infrared spectral bandpass filters. The main application of multiple

channel thermopiles is gas detection through IR absorption.

Prominent gases to be detected are CO2, hydrocarbons and CO.

Thermopile Line and Matrix Arrays: TPL, TPA Series

The new TPA- (matrix array) and TPL- (line array) series offer

multi-element thermopile arrays combined with an optical lens,

amplifier, and interface electronics (multiplexer, ambient

temperature sensor) in a compact TO-39-type housing. Array

sensors are sold as a modular type, i.e. on a PCB with external

data memory. These TPA- and TPL-Modules are precalibrated

with the data stored in an EEPROM.

All thermopile detectors are RoHS compliant.

thermopile detectors

Features

• Available in TO-39 and TO-46

housings

• Available in isothermal housing options

•Integrated signal processing

ASIC available (TPMI®)

• Single, dual or quad elements

• 8-element line arrays and 4x4 matrix

arrays with various lens optics and

integrated ASIC with multiplexer

• Various filters for optical broadband

or narrow-band applications

• Excellent repeatability

of electro-optical parameters

• Ambient temperature reference

(thermistor or high stability

Si-spreading resistor) included

• High chip sensitivity of several

10 V/W; DC radiation sensitive

•Extremely low temperature coefficient

of sensitivity and resistivity

• Constant response over the infrared

spectrum due to patented absorber

technology

• The absence of microphonic

noise effects

• Low susceptibility to electromagnetic

pulses (EMP) due to the low internal

resistance (<100 kΩ)

•Rugged construction based on CMOS

silicon micromachining technology

Typical Applications

• Remote temperature sensing,

hand-held or industrial pyrometers

• Ear or body thermometers

• Temperature control in copiers and

printers

•Sensor modules for control of

air condition systems (heat manage-

ment, home, automotive)

• Temperature-sensor modules in

home appliances

• Sensor arrays for spatial temperature

measurements (imaging applications)

• Presence detection

• Sensors with infrared bandpass

filters for gas detection by infrared

absorption

• Fire detection

• Industrial drying

Datasheets available upon request.

2www.optoelectronics.perkinelmer.com

Dual and Quad Element

Thermopile Detectors

General Data

Tc of sensitivity (absolute value):

0.02%/K

Tc of resistance (absolute value):

0.02%/K

Max. operating temperature: -20 to 100°C

Max. storage temperature: -40 to 100°C

Thermistor BETA: 3964 K

Option for all types: 8-14 µm

Pyrometry filter: G9

www.optoelectronics.perkinelmer.com 3

Thermopile Detectors

DC Output Voltage Time Active TP Chip Thermistor

Part Field of Sensitivity at Tamb = 25°C Constant Area Resistance

Number Housing View V/W Tobj = 40°C (mV) ms mm2kΩ

ΩkΩ

Ω

TPS 332 TO-46 100˚ 35 1.6 25 0.7 x 0.7 75 100

TPS 334 TO-39 60˚ 35 0.74 25 0.7 x 0.7 75 30

TPS 334 G9 TO-39**** 60˚ 20 0.4 35 0.7 x 0.7 75 30

TPS 334 L5.5 TO-39** 7˚ 55 0.3 25 0.7x 0.7 75 30

TPS 336-IRA TO-39*** 15˚ 35 1.0 25 0.7 x 0.7 75 30

TPS 232 TO-46 110˚ 36 0.73 16 round, ∅0.5 87 100

TPS 23B Isothermal TO-46 90˚ 36 0.65 16 round, ∅0.5 87 Spreading resistor 1

TPS 535 TO-39 80˚ 20 1.5 35 1.2 x 1.2 50 30

Single Element Thermopile Detectors

Technical Specification

DC Time Active TP Chip Thermistor

Part Field of Sensitivity Constant Area Resistance Noise NEP D* (25˚C)

Number Housing View V/W ms mm2kΩ

ΩnV/√

√Hz nW/√

√Hzcm

√

√Hz/W kΩ

Ω

TPS 2534 TO-39** 2x90˚ 42 35 1.2x.1.2 50 29 0.7 1.8x10830

TPS 4339 TO-39*** 4x60˚ 75 25 0.7x0.7 75 35 0.5 1.5x108100

Dual and Quad Thermopile Detectors for Optical Gas Detection

Technical Specification

Test conditions: T = 25˚C

Field of view: at 50% intensity points

Noise: r.m.s., 300 K

Output Voltage Noise

Part Number Field of V (80˚C object, Object mV/√

√Hz

Number Housing of Pixels View Optics 20˚C ambient) Temperature (.5–20Hz)

TPLM 086 L5.5 TO-39 on PCB 8 element line 41˚x6˚ f/1 optics, f=5.5 mm 0.95 -20–100˚C 0.4

or -20–200˚C

TPAM 166 L3.9 TO-39 on PCB 4x4 matrix 41˚x32˚ f/1 optics, f=3.9 mm 0.95 -20–100˚C 0.4

Line and Matrix Arrays

Technical Specification

Part

Number Housing Optics Field of View

a2TPMI 334 TO-39 window opening 2.5 mm 60˚

a2TPMI 334 L5.5 TO-39 integrated Si lens, 5.5 mm focal length 7˚ (D:S = 8:1)

a2TPMI 334 IRA TO-39 internal mirror 15˚ (D:S = 4:1)

TPMI®Modules

Technical Specification

Object Analog Supply Field of

Mfr Type Package Temperature Range Output Voltage Optics View

A2TPMI334-L5.5 TO-39, 8.3 mm height -20–180˚C 0–5 V 5 V Si-lens 7˚

OAA180 / 6264 (without pins)

A2TPMI334-L5.5 TO-39, 8.3 mm height -20–60˚C 0–5 V 5 V Si-lens 7˚

OAA060 / 6266 (without pins)

A2TPMI334 TO-39, 4.2 mm height -20–60˚C 0–5 V 5 V infrared 60˚

OAA060 / 6259 (without pins) window

Technical Specification

For further details please contact us.

Thermopile TPMI®Modules

with Si-Lens Optics

*** with int. reflector

**** with 8...12 µm IR window

* 500 K black body

** with 5.5 mm lens

Test conditions: T = 25˚C

Field of view: at 50% intensity points

Noise: r.m.s., 300 K

* 500 K black body

** with 2 channels

*** with 4 channels

Above data are referenced without the bandpass

filter. Option for all types: individual bandpass

filters for each channel

Max. operating temperature: -20–100°CMax.

storage temperature: -40–100°C

Temperature reference slope: 10 mV/K

Temperature reference offset: 0 mV

Output resistance: 200 Ω

Power up time: 0.3 s

Sample frequency: 3 kHz

Test conditions: T = 25˚C

Operating voltage: 5 V

Operating current: 1 mA

Zero signal offset: VDD/2

Thermopile Sensors in TO-46

(left) (TPS 332, TPS 232) and

Isothermal (right) (TPS 23B)

Housing

Pyroelectric Basics

Pyroelectric materials produce a charge shift when they undergo

a change in thermal energy. This effect is applied for detectors

that show an output signal similar to alternative current with a

change of incident infrared radiation. Such pyroelectric detec-

tors are used in all kinds of motion detection. Detectors based

on the same principle are applied for gas monitoring based on

the spectral absorption method.

Dual Element Types

Dual Element Detectors combine two elements which are

connected in reverse polarity to each other to one FET source

follower output. Typical applications: intrusion alarm PIR,

motion detection for light switches.

Four Element Two Channel Types

Four Element Detectors combine four elements to two FET

outputs. The two individual channels allow signal processing to

avoid false alarms and provide redundancy. Typical applications:

high end intrusion alarms.

Ceiling Mount Detectors

Ceiling Mount Detectors have a special element configuration

suitable for ceiling lens designs. They combine two or four

elements to one FET output. Different window sizes for cost

optimization and optional RF protection is available.

Applications: presence detection and alarms.

Single Element Detectors

This range of detectors offer one element with source follower

output. Different element sizes are available. Most of the

preferred types have built-in thermal compensation. Special

IR windows of narrow bandwidth are offered. Applications:

non-contact temperature measurements and gas monitors.

Dual Channel Detectors

These special designs offer two Single Element Detectors

in one TO-5 case. Each one is equipped with its individual

filter and provides its own output. This is also available in

temperature compensated version. Various narrow-band filter

windows can be chosen. Application: gas monitor, gas alarms.

DigiPyroTM Family

To enable total digital electronics, PerkinElmer introduces

a new family of pyrodetectors with digital output.

All pyroelectric infrared detectors are RoHS compliant.

pyroelectric infrared detectors

Features

• Low noise, high responsivity

• Excellent common mode

balance for Dual Element types

•Available in TO-39, TO-5 housings

• Various filter windows for broad

band or narrow band applications

• Single and Dual channel devices

• Dual and Quad-type elements

for intrusion applications

• Thermally compensated versions

for single element types

Typical Applications

• Intrusion alarm

•Motion detection

• Ceiling mount presence detection

•Gas analysis

• Gas alarm

• Non-contact infrared

measurements

Datasheets available upon request.

4www.optoelectronics.perkinelmer.com

General Data

Max. operating temperature:

-40 to +85°C

Max. storage temperature:

-40 to +85°C

Operating voltage: 2 to 12 V/47 kΩ

Load resistor

Offset voltage: 0.2 to 1.5 V/47 kΩ

Load resistor

Table Key

Responsivity 100°C Black Body,

1Hz electr.Bandwidth

Noise 1 to 10 Hz Bandwidth

NEP 100°C Black Body, 1Hz

electr.Bandwidth, 1Hz

D* 100°C Black Body, 1Hz

electr.Bandwidth, 1Hz

All data refer to 25°C

www.optoelectronics.perkinelmer.com 5

Pyroelectric Infrared Detectors

Part Responsivity Noise NEP D* Field of View Element Size

Number Housing V/W typ (1 Hz) µVpp typ W√

√Hz typ cm√

√Hz/W typ Horizontal Vertical mm2

LHi 944 TO-39 4000 20 7.5 x10-10 1.9x107110˚ 110° 2x1/2x1

LHi 958 TO-5 3700 20 8.1x10-10 1.75x107110˚ 110˚ 2x1/2x1

LHi 968 TO-5 3800 20 8.0x10-10 1.9x107100˚ 100˚ 2x1/2x1

LHi 874 TO-39 4000 20 7.5x10-10 1.9x10790˚ 95˚ 2x1/2x1

LHi 878 TO-5 4000 20 7.5x10-10 1.9x10790˚ 95˚ 2x1/2x1

Dual Element Detectors

Technical Specification

Part Responsivity Noise NEP D* Field of View Element Size

Number Housing V/W typ (1 Hz) µVpp typ W√

√Hz typ cm√

√Hz/W typ Horizontal Vertical mm2

LHi 1148 TO-5 4500 30 8.6x10-10 14x107108˚ 67˚ 0.8x1.2 ea.

LHi 1548 TO-5 6500 30 8.6x10-10 14x107108˚ 67˚ 0.9532 ea.

Four Element Two Channel Detectors

Technical Specification

Part Responsivity Noise NEP D* Field of View Element Size

Number Housing V/W typ (1 Hz) µVpp typ W√

√Hz typ cm√

√Hz/W typ X Y mm2

LHi 906 TO-5 3000 20 7.5x10-10 719x107150˚ 150˚ 2.66 ea. (round)

LHi 1128 TO-5 8000 40 7.5x10-10 28x107156˚ 144˚ 1x1 (4 elements)

PYQ 1398 TO-5 8000 40 7.5x10-10 28x107103˚ 103˚ 1x1 (4 elements)

Ceiling Mount Application Detectors

Technical Specification

Part Responsivity Noise NEP D* Field of View Element Size

Number Housing V/W typ (10 Hz) nVRMS(10Hz) W√

√Hz typ cm√

√Hz/W typ X Y mm2

LHi 807 TO-5 640 600 9.4x10-10 16x107135˚ 120˚ 1.5x1.5

LHi 807 TC TO-5 320 300 9.4x10-10 16x107135˚ 120˚ 1.5x1.5

PYS 4198 TC TO-5 150 150 10x10-10 18x107130˚ 110˚ 2x2

Single Element Detectors

Technical Specification

Part Responsivity Noise NEP D• Field of View Element Size

Number Housing V/W typ (10 Hz) nVRMS(10 Hz) W√

√Hz typ cm√

√Hz/W typ X (ea.) Y (ea.) mm2

LHi 814 G1/G20 TO-5 640 600 9.4x10-10 16x10777˚ 95˚ 1.5x1.5 (ea.)

LHi 814 G2/G20 TO-5 640 600 9.4x10-10 16x10777˚ 95˚ 1.5x1.5 (ea.)

PYS 3228 TC TO-5 320 300 9.4x10-10 16x10777˚ 95˚ 1.5x1.5 (ea.)

Dual Channel Detectors

Technical Specification

These types offer special narrow band windows in pair, one channel as reference.

These types offer special narrow band windows.

SerinusTM CO2Sensor (PYM 122-1): Air Quality

SerinusTM CO2Sensor (PYM 122-2): Air Safety

Natural Gas Alarm Sensor (PYM 151)

PerkinElmer introduces a number of gas sensors based on a

common platform, all based on the principle of non-dispersive

infrared radiation absorption (NDIR). A robust thermal IR source

and a highly reliable dual channel pyroelectric detector are the

core of the sensor cell, which is detemined in size by an absorp-

tion chamber. In the event of the specified gas diffusing into the

chamber, the signal is reduced accordingly and the included

electronics generate a signal output.

Pyroelectric detectors are especially suited for optical IR-based

gas detection due to their robustness and low sensitivity to

environmental temperature influences. A selective IR window

in the detector allows the precise spectral selection of a gas.

Appropriate electronics are required for obtaining a user-friendly

signal. A microprocessor converts the amplified sensor signal

into a gas concentration value. The PerkinElmer gas sensor

range is featured with pre-programmed calibration and enables

safe long term operation.

The gas sensors include the following versions:

SerinusTM CO2Sensor (PYM 122-1): Air Quality

Calibrated to meet the air quality application range of

0 to 5000 ppm CO2content. It provides a 16-bit digitally

coded output signal and two additional fixed trigger levels

as switched outputs (800 ppm / 1500 ppm).

SerinusTM CO2Sensor (PYM 122-2): Air Safety

Calibrated to meet the air quality application range of

0 to 10% CO2content. It provides a 16-bit digitally coded

output signal and two additional fixed trigger levels as

switched outputs (2% / 5%).

Natural Gas Alarm Sensor (PYM 151-1 / PYM 152-1)

Designed for natural gas alarm applications. It fully meets

requirements of EN 50194 standard for gas alarm, calibrated to

offer a Pre-Alert at 6% LEL and Main Alert at 12% LEL. It pro-

vides a 16-bit digitally coded output signal and self-diagnosis.

gas sensors

Benefits

• No service requirement.

• Digital output, self-monitoring

and diagnostic features

– enhanced ease of use.

• Long-term stability:

The system has a long service life

without gradual degradation.

• Contamination proof:

no chemical sensitivity to other

gases or aerosols, no poisoning

effects, temporary or permanent.

•System self-diagnosis:

A system failure automatically

produces a notification - no degra-

dation goes unnoticed.

• Selectivity:

The sensor reacts precisely to the

type of gas determined by the

absorption region, with negligible

response to other gases within the

mixture.

6www.optoelectronics.perkinelmer.com

SerinusTM CO2Sensor (PYM 122-1):

Air Quality

SerinusTM CO2Sensor (PYM 122-2):

Air Safety

The perfect range of sensors to cover

all applications of sensing CO2in air,

whether for comfort, energy manage-

ment, air processing, air safety and

cooling refrigerant supervision.

Natural Gas Alarm Sensor

(PYM 151-1 / PYM 152-1)

For natural gas alarm applications,

providing EN standard required values

such as Pre-Alert at 6% LEL and Main

Alert at 12% LEL. It is the perfect

solution for commercial and industrial

gas alarm applications for all available

mixtures of natural gas.

Natural Gas Alarm Sensor

(PYM 151-1 / PYM 152-1)

www.optoelectronics.perkinelmer.com 7

Pyroelectric Infrared Detectors

PYM 122-1 Air Quality PYM 122-2 Air Safety Remark

Units Units

Range 0...5000 ppm 0...10 % CO2

Resolution 1 ppm 0.1 %

Accuracy 50 ppm 0.2 % +/- 5% of measured value

Reproducibility 10 ppm 0.2 % +/- 1% of measured value

Pre-Alert Trigger Level S1 800 ppm 2 % typical

Main Alert Trigger Level S2 1500 ppm 5 % typical

Outputs S1, S2 30 V/100 mA 30 V/100 mA open collector max.

Warm-Up Time 120 s 120 s at 20°C, after 1 hour

with power off. max.

Response Time 30 s 30 s 63% change of output upon

step concentration change. max.

Long-Term Stability +/- 50 ppm/yr +/- 0.2 %/yr max.

Operating Voltage 5.0+/- 0.5 Volt 5.0+/- 0.5 Volt DC

Current Consumption 240 mA 240 mA max.

150 mA 150 mA Average

Operating Temperature Ranges -10 to +50 ˚C -10 to +50 ˚C

Storage Temperature Range -20 to +60 ˚C -20 to +60 ˚C

Environmental Humidity 95% R.H. 95% R.H. non condensing max.

Expected Life-Span 10 years 10 years @ 25°C, 50% r.H. typical

Technical Specification

PYM 151 PYM 152 Remark

Units Units

Range 0...20 % LEL 0...20 % LEL Natural Gas

Resolution 1% LEL 1 % LEL

Reproducibility 2 % LEL 2 % LEL +/- 1% of measured value

Pre-Alert Trigger Level S1 6 % LEL 6 % LEL typical

Main Alert Trigger Level S2 12 % LEL 12 % LEL typical

Outputs S1, S2 30 V/100 mA 30 V/100 mA open collector max.

Warm-Up Time 120 s 120 s at 20°C, after 1 hour

with power off. max.

Response Time 30 s 30 s 63% change of output upon

step concentration change. max.

Long-Term Stability +/- 0.5 % LEL/a. +/- 0.5 % LEL/a. max.

Operating Voltage 5.0+/- 0.5 Volt 5.0+/- 0.5 Volt DC

Current Consumption 240 mA 240 mA max.

150 mA 150 mA Average

Operating Temperature Ranges -10 to +50 ˚C -10 to +50 ˚C

Storage Temperature Range -20 to +60 ˚C -20 to +60 ˚C

Environmental Humidity 95% R.H. 95% R.H. non condensing max.

Expected Life-Span 10 years 10 years @ 25°C, 50% r.H. typical

Technical Specification

SerinusTM CO2Sensor (PYM 122)

Dual Element Detector PYD 1998

Triple Channel Quad Element Detector PYQ 2898

PerkinElmer presents the first detector series to dramatically differ from previous

generations: the DigiPyro™ technology offers digital signal outputs via a special

one wire direct link feature. The electronics include analog-to-digital conversion,

on-chip low-power oscillator and the serial interface. As sensing elements, either

dual element or quad element configurations are offered.

PYD 1998 Dual Element

Standard dual element configuration in TO-5 housing, offering one output in 15 bit

digitized format – “direct link” = one wire interface feature.

PYQ 2898 Triple Channel Quad Element

High end version with 2 pairs of elements representing 2 channels and an additional

temperature reference channel, quad element configuration in TO-5 housing offer-

ing 42 bit “direct link” interface.

Above mentioned are the main characteristical data of this new series. Unless

specified differently, all data refer to 25°C environmental temperature. Detailed

datasheets and further application notes and application kits are available.

8www.optoelectronics.perkinelmer.com

General Characteristics

Parameter Symbol Min. Typ. Max. Units Remarks

Operating Voltage VDD 3.0 5.0 5.5 V

Supply Current IDD 60 µA (DC) VDD = 4 V

Responsivity 3.3 4 kV/W

Noise 20 50 µVpp

Serial Interface Refresh Frequency fREP 137 Hz

ADC Counts of Bits 42 bits

ADC Resolution 14 bits Max. count = 214

ADC Sensitivity 6.1 6.5 7.0 µV/count

ADC Offset 7000 8192 9200 counts

Internal Clock Frequency fCLK 60 70 90 kHz

Temperature Reference

Gain 96 counts/K -10°C to +80°C

Linearity -5 5 % -40°C to +120°C

Operating Temperature T0-40 85 °C

Storage Temperature Ts-40 85 °C

DigiPyroTM PYQ 2898

DigiPyro™digital output pyrodetectors

Key Features and Benefits

• Digital output sensor

“direct link“ interface

• Infrared window

5.5...14 µm transmission

• High level electrical performance

Low EMI sensitivity

Unique responsivity

Strong power rejection ratio

Applications

•Intrusion alarm applications

•Motion activated switches

The electrical parameters

may vary from specified

values in accordance

with their temperature

dependence.

Avoid storage in humid

environments.

General Characteristics

Parameter Symbol Min. Typ. Max. Units Remarks

Operating Voltage VDD 3.0 5 5.5 V

Supply Current IDD 30 40µA V

DD = 5 V

Responsivity 3.3 4 kV/W

Noise 20 50 µVpp

Serial Interface Refresh Frequency tREP 3.70 ms

ADC Counts of Bits 15 bits 1st bit is “0”

ADC Resolution 14 bits Max. count = 214

ADC Sensitivity 6.0 6.5 7.0 µV/count

ADC Offset 6200 8250 11000 counts

Internal Clock Frequency FCLK 60 70 90 kHz

Serial

Interface »direct link«

Oscillator

Pyro

Element

Pair

A/D

Conversion

DigiPyroTM PYD 1998

»direct link«

Oscillator

Pyro

Element

Pair

A/D

Conversion

Serial

Interface

Pyro

Element

Pair

Tref

Pyroelectric Infrared Detectors

www.optoelectronics.perkinelmer.com 9

Photodiodes

Description

PerkinElmer Optoelectronics offers a broad array of Silicon and

InGaAs PIN and APDs.

InGaAs Avalanche Photodiodes

The high-quality InGaAs avalanche photodiodes (APDs) are

packaged in hermetically sealed TO cans and ceramic blocks

designed for the 900 to 1700 nm wavelength region.

InGaAs PIN Photodiodes

High-quality Indium Gallium Arsenide photodiodes designed

for the 900 to 1700 nm wavelength region, these photodiodes

are available in standard sizes ranging from 50 microns to 5 mm

in diameter. Packages include ceramic submount, TO packages,

and chip form.

Silicon Avalanche Photodiodes

These are reliable, high-quality detectors in hermetically sealed

TO packages designed for high-speed and high-gain applications.

A “reach-through” structure is utilized which provides very low

noise performance at high gains and a full range of active areas.

Silicon PIN Photodiodes

Offered for low- to high-speed applications, these PINs are

designed for the 250 nm to 1100 nm range. Standard sizes range

from 100 microns to 10 mm in diameter.

Silicon PN Photodiodes

This format includes a variety of high-volume, low-cost silicon

photodiodes that meet the demanding requirements of today’s

commercial and consumer markets.

Selective Photodiodes

These GaP and GaAIAs-based photodiodes provide high sensitivity

and a narrow spectral response without additional filtering.

As SMD components they are ready for automated treatment.

Alternate Source/Second Source Photodiodes

PerkinElmer’s nearest equivalent devices are selected on the

basis of general similarity of electro-optical characteristics and

mechanical configuration. Interchangeability in any particular

application is not guaranteed, suitability should be determined

by the customer's own evaluation.

Detector Modules

Preamplifier modules are hybrid devices with a photodiode

and a matching amplifier in a compact hermetic TO package.

An integral amplifier allows for better ease of use and noise

bandwidth performance. 14-pin, DIL, and/or fibered packaged

modules are available on a custom basis.

All photodiodes are RoHS compliant.

photodiodes

Features

• Low-cost visible and near-IR

photodetector

•Excellent linearity in output

photocurrent over 7 to 9 decades

of light intensity

• Fast response times

• Available in a wide range of

packages including epoxy-coated,

transfer-molded, cast, and hermetic

packages, as well as in chip form

or surface mounting technology

• Low noise

• Mechanically rugged, yet compact

and lightweight

• Available as duals, quads or as

linear arrays

•Usable with almost any visible

or near-infrared light source such

as solid state laser diodes, LEDs,

neon, fluorescent, incandescent

bulbs, lasers, flame sources,

sunlight, etc.

•Can be designed and tested to meet

the requirements of your application

Typical Applications

• Fiber-optic communications

• Instrumentation

• High-speed switching

• Spot position tracking and

measurement

• Photometry

• Data

transmission

• UV light meters

• Fluorescent light detection

• Laser range finding

• Barcode scanning

• Laser safety scanning

• Distance measurement

Datasheets available upon request.

10 www.optoelectronics.perkinelmer.com

Indium Gallium Arsenide

PIN Photodiodes, Large-Area,

and Small-Area

Indium Gallium Arsenide APDs

• High responsivity

•Low capacitance for high

bandwidths

• Available in various hermetic

packages

Selective Photodiode SR10SPD 470-0.9

• Surface mounting device

• High sensitivity

• Narrow spectral response without

additional filtering

Photo Sens. Resp. Dark Spect. Noise Cap. Bandwidth NEP @ Bias Volt

Part Standard Diam. A/W Curr. Curr. Dens. @100 kHz GHz 1550 nm for These

Number Package µm @1300 nm @1550 nm Id (nA) In (pA/√

√Hz) Cd (pF) into 50 Ω

ΩpW/√

√Hz Specs V

Ceramic 50 0.86 0.95 0.5 <0.02 0.35 >3.5 <0.02 5

C30637ECERH Ceramic 75 0.86 0.95 0.8 <0.02 0.4 3.5 <0.02 5

C30617ECERH Ceramic 100 0.86 0.95 1 <0.02 0.55 3.5 <0.02 5

C30617BH Ball lens 100 0.8 0.9 1 <0.02 0.8 3.5 <0.02 5

C30618ECERH Ceramic 350 0.86 0.95 2 0.02 4 0.8 0.02 5

C30618GH TO window 350 0.86 0.95 2 0.02 4 0.8 0.02 5

InGaAs PIN Small-Area—900 nm to 1700 nm

Technical Specification

Test conditions: T = 22°C

Reverse Dark Active Rise/Fall Spectral Range

Part Voltage Current Area Sensitivity Time @0.5 max.

Number Package* (V) (nA) (mm2) (A/W) tr/tf (us) (nm)

SR10SPD 470-0.9 SMD (A3) 10 0.03 0.7 0.18 N/A 425–585

SR10SPD 525-0.9 SMD (A3) 5 0.005 0.73 0.25 N/A 480–560

SR10SPD 660-0.9 SMD (A3) 10 0.04 0.62 0.42 0.027 620–700

SR10SPD 880-0.9 SMD (A3) 5 0.001 0.73 0.25 N/A 820–935

Selective Photodiodes Based on III–V Materials

Technical Specification

Photo Sens. Resp. Dark Spect. Noise Cap. Bandwidth NEP @ VOP

Part Standard Diam. A/W Curr. Curr. Dens. @100 kHz GHz 1550 nm for

Number Package µm @1300 nm @1550 nm Id (nA) In (pA/√

√Hz) Cd (pF) into 50 W pW/√

√Hz Gain=10 V

C30645EH TO window 80 8.4 9.4 10 0.25 1.2 1 0.13 40–70

C30645ECERH Ceramic 80 8.4 9.4 10 0.25 1 1 0.13 40–70

C30662EH TO window 200 8.4 9.4 50 1 2.5 0.2 0.15 40–70

C30662ECERH Ceramic 200 8.4 9.4 50 1 2.5 0.2 0.15 40–70

InGaAs APDs—900 nm to 1700 nm

Technical Specification

Test conditions: T = 22°C

Photo Sens. Resp. Dark NEP @ Cap. Bandwidth Max. Power Bias Volt

Part Standard Diam. A/W Curr. 1300 nm @100 kHz MHz for .15 dB for These

Number Package mm @850 nm @1300 nm @1550 nm Id (nA) pW/√

√Hz Cd (pF) into 50 W Linearity (dBm) Specs V

C30619GH

TO-18 0.5 0.2 0.86 0.95 5 <0.1 8 350 >+13 5

C30641GH

TO-18 1 0.2 0.86 0.95 5 <0.1 40 75 >+13 2

C30642GH

TO-5 2 0.2 0.86 0.95 10 0.1 350 20 +11 0

C30665GH

TO-5 3 0.2 0.86 0.95 25 0.2 1000 3 +11 0

C30723GH

TO-8 5 0.2 0.86 0.95 30 0.3 2500 2.5 +11 0

InGaAs PIN Large-Area—900 nm to 1700 nm

Technical Specification

Test conditions: T = 22°C

* All packages are listed on our website.

photodiodes

www.optoelectronics.perkinelmer.com 11

Photodiodes

Silicon Avalanche Photodiodes

• Hermetically sealed packages

Photo Resp. Dark Spect. Noise Cap. Resp. NEP @ VOP

Part Standard Sens. Diam. 900 nm Curr. Curr. Dens. @100 kHz: Time 900 nm Range

Number Package mm A/W Id (nA) In (pA/√

√Hz) Cd (pF) tr (ns) fW/√

√Hz V

C30817EH

TO-5 0.8 75 50 0.5 2 2 7 275–425

C30872EH

TO-8 3 45 100 0.5 10 2 11 275–425

C30902EH

TO-18 0.5 77 (@ 830 nm) 15 0.2 1.6 0.5 3 (@ 830 nm) 180–250

C30902SH

TO-18 0.5 128 (@ 830 nm) 15 0.1 1.6 0.5 0.86 (@ 830 nm)180–250

C30916EH

TO-5 1.5 70 100 0.5 3 2 8 275–425

Si APD—Standard Types–400 nm to 1100 nm

Technical Specification

Test conditions: T = 22°C

Photo Resp. Dark Spect. Noise Cap. Resp. NEP @ VOP

Part Standard Sens. Diam. @900 nm Curr. Curr. Dens. @100 kHz Time 900 nm Range

Number Package mm A/W Id (nA) In (pA/√

√Hz) Cd (pF) tr (ns) fW/√

√Hz V

C30724EH TO-18 0.5 9 (@ M=15) 25 0.1 1 5 11 120–200

C30724PH Plastic 0.5 9 (@ M=15) 25 0.1 1 5 11 120–200

C30737EH TO-18 0.5 47 (@ I-800 nm 20 0.3 2.5 0.3 6.4 (@ 800 nm 120–200

-500 M=100) M=100)

Si APD—Low Cost, High Volume–400 nm to 1000 nm

Technical Specification

Test conditions: T = 22°C

Photo Resp. Dark Spect. Noise Cap. Resp. NEP @ ADP VOP

Part Standard Sens. Diam. @830 nm Curr. Curr. Dens. @100 kHz Time 830 nm Range

Number Package mm A/W Id (nA) In (pA/√

√Hz) Cd (pF) tr (ns) fW/√

√Hz V

C30902SH-TC TO-66 0.5 128 2 0.04 1.6 0.5 0.3 160–250

C30902SH-DTC TO-66 0.5 128 1 0.02 1.6 0.5 0.16 160–250

Si APD—TE-Cooled

Technical Specification

Test conditions: T = 0°C for -TC and -20°C for -DTC ADP VOP Range: temperature dependent

Photo Dark Spect. Noise Cap. Resp. VOP

Part Standard Sens. Diam. Resp. Curr. Curr. Dens. @100 kHz Time NEP Range

Number Package mm A/W Id (nA) In (pA/√

√Hz) Cd (pF) tr (ns) fW/√

√HzV

C30927EH-01

TO-8 1.5 total 15 (@1060 nm) 25 0.5 1 3 33 (@1060 nm) 275–425

C30927EH-02

TO-8 1.5 total 62 (@900 nm) 25 0.5 1 3 8 (@900 nm) 275–425

C30927EH-03

TO-8 1.5 total 55 (@830 nm) 25 0.5 1 3 9 (@830 nm) 275–425

C30985EH Custom 0.3 pitch 31 (@830 nm) 1 0.1 0.5 2 3 (@830 nm) 250–425

Si APD—Arrays Quadrant and Linear–400 nm to 1100 nm

Technical Specification

Test conditions: T = 22°C

12 www.optoelectronics.perkinelmer.com

Photo Resp. Dark Spect. Noise Cap. Resp. NEP @ VOP

Part Standard Sens. Diam. @830 nm Curr. Curr. Dens. @100 kHz Time 830 nm Range

Number Package mm A/W Id (nA) In (pA/√

√Hz) Cd (pF) tr (ns) fW/√

√Hz V

C30921EH TO-18 0.5 77 15 0.23 1.6 0.5 3 180–250

C30921SH TO-18 0.5 128 15 0.11 1.6 0.5 0.86 180–250

Si APD—Lightpipe

Technical Specification

Test conditions: T = 22°C

Photo Resp. Dark Spect. Noise Cap. Resp. NEP @ VOP

Part Standard Sens. Diam. @1060 nm Curr. Curr. Dens. @100 kHz Time 900 nm m=15 Range

Number Package mm A/W Id (nA) In (pA/√

√Hz) Cd (pF) tr (ns) fW/√

√Hz V

C30954EH TO-5 0.8 36 50 0.5 2 2 14 275–425

C30955EH TO-5 1.5 34 100 0.5 3 2 15 275–425

C30956EH TO-8 3 25 100 0.5 10 2 20 275–425

Si APD—NIR-Enhanced–400 nm to 1100 nm

Technical Specification

Test conditions: T = 22°C

Photo Dark Spect. Noise Cap. Resp. NEP @ VOP

Part Sens. Diam. Resp. Curr. Curr. Dens. @100 kHz Time Peak Range

Number mm A/W Id (nA) In (pA/√

√Hz) Cd (pF) tr (ns) fW/√

√Hz V

C30626FH 5x5 22 (@900 nm) 250 0.5 30 5 23 (@900 nm) 275–425

C30703FH 10x10 16 (@530 nm) 10 0.7 120 5 40 (@530 nm) 275–425

Si APD—Radiation Detection

Technical Specification

Test conditions: T = 22°C

Silicon Avalanche Photodiodes

• Low cost, high volume

photodiodes

www.optoelectronics.perkinelmer.com 13

Photodiodes

Silicon PIN Photodiodes

and Modules

• Broad range of photosensitive areas

• Low operating voltage

• Hermetically sealed packages

• SMD-devices

Si PIN – Surface Mounting Device

CFD10

• Large radiant sensitivity area

CR50DE

• Solid state ceramic chip

• High thermal conductivity

• Special type (CR50DE-DLF) with

daylight filter on request

Photo Resp. Dark Spect. Noise Cap. Resp. NEP @ Bias Volt

Part Standard Sens. Diam. @830 nm Curr. Id Curr. Dens. @100 kHz Time 830 nm for These

Number Package mm A/W nA In (fA/√

√Hz) Cd (pF) tr (ns) fW/√

√Hz Specs V

C30971EH TO-18 0.5 0.5 10 57 1.6 0.5 113 100

Si PINs—Window and Lightpipe Packages, Fast Response–400 nm to 1100 nm

Technical Specification

Test conditions: T = 22˚C

Photo Resp. Dark Spect. Noise Cap. Resp. NEP @ Bias Volt

Part Standard Sens. Diam. @900 nm Curr. Id Curr. Dens. @100 kHz Time 900 nm for These

Number Package mm A/W nA (fA/√

√Hz) Cd (pF) tr (ns) fW/√

√HzSpecs V

FFD-100H TO-5 2.5 0.58 2 25 8.5 3.5 44 15

FFD-200H TO-8 5.1 0.58 4 36 30 5 62 15

Si PINs—Large Area, Fast Response–400 nm to 1100 nm

Technical Specification

Test conditions: T = 22˚C

Photo Resp. Dark Spect. Noise Cap. Resp. NEP @ Bias Volt

Part Standard Sens. Diam. @900 nm Curr. Id Curr. Dens. @100 kHz Time 900 nm for These

Number Package total mm A/W nA In (fA/√

√Hz) Cd (pF) tr (ns) fW/√

√Hz Specs V

C30845EH TO-5 8 0.6 7 47 8 6 79 45

YAG-444-4AH Custom 11.4 0.4 @1.06 µm 40 118 9 25 295 180

Si PINs—Quadrant–220 nm to 1100 nm

Technical Specification

Test conditions: T = 22˚C

Photo Resp. Dark Spect. Noise Cap. Resp. NEP @ Bias Volt

Part Standard Sens. Diam. @900 nm Curr. Id Curr. Dens. @100 kHz Time 900 nm for These

Number Package mm A/W nA In (fA/√

√Hz) Cd (pF) tr (ns) fW/√

√Hz Specs V

C30807EH TO-18 1 0.6 1 18 2.5 3 30 45

C30808EH TO-5 2.5 0.6 3 31 6 5 52 45

C30822EH TO-8 5 0.6 5 40 17 7 67 45

C30809EH TO-8 8 0.6 7 47 35 10 79 45

C30810EH Custom 11.4 0.6 30 98 70 12 163 45

Si PINs—Standard N-Type–400 nm to 1100 nm

Technical Specification

Test conditions: T = 22˚C

Reverse Dark Active Rise/Fall

Part Voltage Current Area Sensitivity Time Capacitance

Number Package* (V) (nA) (mm2) (A/W) tr/tf (us) (pf)

PFD10 SMD (D) 32 5 6.71 0.6 200 25

CR10DE Ceramic SMD (A1) 50 0.5 0.31 0.5 3 2.5

CR50DE Ceramic SMD (A2) 50 0.5 0.31 0.5 3 2.5

SR10BP SMD (A3) 170 10 0.65 N/A 10 10

SR10BP-B SMD (A3) 170 10 0.65 N/A 10 10

Si PIN-Diodes—Surface Mounting Devices

Technical Specification

* All packages are listed on our website.

Photo Resp. Shunt Spect. Noise Cap. NEP @

Part Standard Sens. Diam. A/W Resis. Curr. Dens.: @100 kHz: 900 nm

Number Package mm @250 nm @900 nm Rd MW In (fW/√

√Hz) Cd (pF) fA/√

√Hz

UV-040BQH TO-8 1 0.12 0.58 2000 3 25 5

UV-100BQH TO-8 2.5 0.12 0.58 1000 4 120 7

UV-215BQH TO-8 5.4 0.12 0.58 250 8 450 25

UV-245BQH TO-8 4.4x4.7 0.12 0.58 375 7 375 20

Si PINs—UV Enhanced, Low Noise–220 nm to 1100 nm

Technical Specification

Test conditions: T = 22˚C

Silicon PINs—UV Enhanced

14 www.optoelectronics.perkinelmer.com

Photo Resp. Spect. Noise NEP @ Bandwidth Bias Volt

Part Standard Sens. Diam. MV/W Volt. Dens. 900 nm kHz for These

Number Package mm @250 nm @900 nm Vn (µV/√

√Hz) pW/√

√Hz into 50 W Specs V

HUV-2000BH Custom 5.4 24 116 2.5 0.02 2 0

HUV-1100BGH TO-5 2.5 24 116 20 0.17 20 0

Si PIN Modules—Low Bandwidth–1 kHz to 50 kHz

Technical Specification

Test conditions: T = 22°C

PIN Photo Sens. Resp. Lin.Volt. Spect. Noise NEP Bandwidth Photo. Diod.

Part or APD Standard Diam. @900 nm Out. Swing Volt. Dens. @900 nm MHz (3 dB, Bias

Number Used Package mm kV/W (V) 50 Ω

ΩVn (nV/√

√Hz) pW/√

√Hz into 50 Ω

Ω) Volt V

C30608EH C30971 P 0.5 32 (@830 nm) 0.7 60 1.8 (@830 nm) 50 12

(Si PIN)

C30950EH C30817 L 0.8 560 0.7 20 0.036 50 275–425

(Si APD)

C30919EH C30817 N 0.8 1000 0.7 25 0.025 40 275–425

(temp. compens.) (Si APD)

Si PIN & APD Modules—High Bandwidth–40 MHz to 100 MHz

Technical Specification

Typical Characteristics @ T = 22°C

Typical Characteristics @ T = 22°C, 50 Ω load

Photo Sens. Resp. @ λ

λLin. Volt. Spect. Noise Bandwidth Photo.Diod.

Part APD Optimum Standard Diam. of APD Out Volt. Dens. NEP @ λ

λMHz Bias

Number Chip Resp.λ

λPackage mm (kv/W) Swing (V) Vn (nV/√

√Hz) fW/√

√Hz (-3 dB) Volt V

C30659- C30902E 900 L 0.5 400 0.7 15 40 200 180–260

900-R5BH (Si APD)

C30659- C30817E 900 L 0.8 3000 0.7 35 12 50 275–435

900-R8AH (Si APD)

C30659- C30954E 1060 L 0.8 200 0.7 20 100 200 275–425

1060-R8BH (Si APD)

C30659- C30956E 1060 L 3 280 0.7 25 90 50 275–425

1060-3AH (Si APD)

C30659- C30645E 1550 L 0.08 90 0.7 20 220 200 40–70

1550-R08BH (InGaAs APD)

C30659- C30662E 1550 L 0.2 340 0.7 45 130 50 40–70

1550-R2AH (InGaAs APD)

Si InGaAs APD Modules—High Bandwidth–50 MHz to 200 MHz

Technical Specification

photodiodes

www.optoelectronics.perkinelmer.com 15

Photodiodes

Part Isc TC Isc IDTC IDRSH CJSRRe tR/tFVoc TC Voc Active Area

Number mA %/˚C nA %/˚C MΩ

ΩnF A/W A/(W/cm2)µsec V mV/˚C mm2

VTS__80H 30.2 200 +11 0.3 7.5 0.2 0.7 13 0.45 -2.6 392

VTS__81H 1.5 0.2 100 +11 0.6 3.5 0.2 0.34 6.4 0.45 -2.6 187

VTS__82H 0.69 0.2 50 +11 1.2 1.75 0.2 0.16 3.4 0.45 -2.6 93

VTS__83H 0.64 0.2 50 +11 1.2 1.75 0.2 0.15 3.4 0.45 -2.6 85

VTS__84H 0.33 0.2 40 +11 1.5 1 0.2 0.07 1.8 0.45 -2.6 42

VTS__85H 0.16 0.2 20 +11 3 0.5 0.2 0.04 1.2 0.45 -2.6 21

VTS__86H 0.080 0.2 10 +11 6 0.25 0.2 0.02 0.75 0.45 -2.6 10

Silicon PN—VTS Series (Low Capacitance, Large Area)

Technical Specification

Table Key VTS Series

ISC Short-Circuit Current

H=1000 lux, 2850 K

TC ISC ISC Temperature Coefficient

H=1000 lux, 2850 K

IDDark Current H=0, VR=100 mV

TC IDID Temperature Coefficient

H=0, VR=100 mV

RSH Shunt Resistance

H=0, VR=10 mV

CJJunction Capacitance

H=0, V=0 V, 1 MHz

SRSensitivity @ 400 nm

REResponsivity 400 nm, 0.18 A/W

tR/tRRise/Fall Time @ 1 KΩload

VR=1 V, 830 nm

VOC Open-Circuit Voltage

H=1000 lux, 2850 K

TC VOC VOC Temperature Coefficient

H=1000 lux, 2850 K

Table Key VTA Series Arrays

ILuniformity 550 nm, 30 nW/cm2

SR550 nm

CJH=0, VR=0

IDH=0, VR= 10 mV

Active Area Per Element

Electro-optical characteristics @ 25˚C

Part Active Area Pitch ILIDCJSRλrange λp

Number Elements mm2mm Uniformity nA max. pF A/W nm nm

VTA1264H 64 1.4097 2.12 1.5 (max./min.) 0.09 200 max. 0.3 min. 300–1100 925

Silicon PN – VTA Series Arrays

Technical Specification

Electro-optical characteristics @ 25˚C

Silicon PN Photodiodes

16 www.optoelectronics.perkinelmer.com

Part Isc TC Isc Voc TC Voc IDRSH CJRe SRλrange λpVBR Active Area

Number µA %/˚C mV mV/˚C nA max. GΩ

ΩpFA/

(W/cm2)A/W nm nm V Package mm2

VTP100H 55 0.24 300 -2 30 0.25 50 max. 0.047 0.5 725–1150 925 140 Flat Sidelooker IRT 7.45

VTP100CH 70 0.2 350 -2 30 0.25 50 max. 0.05 0.55 400–1150 925 140 Flat Sidelooker 7.45

VTP1012H 17 0.2 350 -2 7 0.5 6 max. 0.011 0.55 400–1150 925 140 TO-46 1.6

VTP1112H 90 0.2 350 -2 7 0.5 6 max. 0.033 0.55 400–1150 925 140 TO-46 Lensed 1.6

VTP1188SH 200 0.2 330 -2 30 67 180 — 0.55 400–1100 925 — Lensed Ceramic 11

VTP1220FBH 0.7 min. 0.2 280 -2 10 — 18 max. — 0.27 400–725 550 140 T1-3/4 flat IRB 1.219

VTP1232H 100 min. 0.2 420 min. -2 25 — 180 max. 0.076 0.6 400–1100 920 — T1-3/4 2.326

VTP1232FH 21 min. 0.2 420 -2 25 — 180 max. — 0.6 400–1100 920 — T1-3/4 flat 2.326

VTP1332H 75 min. 0.2 420 -2 25 — 180 max. —0.55 725–1150 920 — T1-3/4 IRT 2.326

VTP1332FH 17 min. 0.2 420 -2 25 — 180 max. —0.55 725–1150 920 — T1-3/4 flat IRT 2.326

VTP3310LAH 36 0.2 350 -2 35 10 25 max. 0.015 0.55 400–1150 925 140 T1 0.684

VTP3410LAH 22 0.26 350 -2 35 10 25 max. 0.013 0.55 700–1150 925 140 T1 IRT 0.684

VTP413H 120 0.2 350 -2 30 0.25 50 max. 0.078 0.55 400–1150 925 140 Lensed sidelooker 7.45

VTP4085H 200 0.2 330 -2 100 2 350 — 0.55 400–1100 925 — Ceramic 21

VTP4085SH 200 0.2 330 -2 50 4 350 — 0.55 400–1100 925 — Ceramic 21

VTP5050H 70 0.2 350 -2 18 0.25 24 max. 0.05 0.55 400–1150 925 140 TO-5 7.45

VTP6060H 200 0.2 350 -2 35 100 60 max. 0.14 0.55 400–1150 925 140 TO-8 20.6

VTP7110H 9 0.2 350 -2 35 7 25 max. 0.015 0.55 400–1150 925 140 Lateral 0.684

VTP7210H 7 0.26 350 -2 35 7 25 max. 0.015 0.55 700–1150 925 140 Lateral IRT 0.684

VTP7840H 70 0.2 325 -2 20 0.25 40 max. — 0.55 725–1150 925 1@10 mA Lensed Sidelooker IRT 5.27

VTP8350H 80 0.2 350 -2 30 100 50 max. 0.06 0.55 400–1150 925 140 Ceramic 7.45

VTP8440H 55 0.2 350 -2 15 0.5 15 max. 0.025 0.55 400–1150 925 140 8 mm Ceramic 5.16

VTP8551H 70 0.2 350 -2 30 0.15 50 max. 0.05 0.55 400–1150 925 140 Mini-DIP 7.45

VTP8651H 55 0.24 300 -2 30 0.15 50 max. 0.045 0.5 725–1150 925 140 Mini-DIP IRT 7.45

VTP8740__TRH 90 0.2 325 min. -2 20 0.25 50 max. — 0.6 400–1150 925 33 min. SMT Clear plastic 5.269

VTP8840__TRH 60 0.5 325 min. -2 20 0.25 50 max. — 0.6 725–1150 925 33 min. SMT IRT 5.269

VTP9412H 17 0.2 350 -2 7 0.4 6 max. 0.011 0.55 400–1150 925 140 6 mm Ceramic 1.6

Silicon PN—VTP Series (Fast Response, High Dark Resistance)

Technical Specification

Table Key VTP Series

ISC Short-Circuit Current

H=100 2850 K

TC ISC ISC Temperature Coefficient, 2850 K

VOC Open-Circuit Voltage

H=100 2850 K

TC VOC VOC Temperature Coefficient, 2850 K

IDDark Current

H=0, VR=10, 50, 100 V

RSH Shunt Resistance

H=0, V=10 mV

CJJunction Capacitance

H=0, V=0, 3, 15 V

REResponsivity 880–940 nm

SRSensitivity @ Peak

range Spectral Application Range

pSpectral Response @ Peak

VBR Breakdown Voltage

IRTInfrared Transmitting

IRB Infrared Blocking

Electro-optical characteristics @ 25˚C

photodiodes

www.optoelectronics.perkinelmer.com 17

Photodiodes

Part Isc TC Isc Voc TC Voc IDCJtR/tFSRλrange λpVBR Active Area

Number µA %/˚C mV mV/˚C nA max. pF nsec A/W nm nm V Package mm2

VTD31AAH 150–225 0.2 350 -2 50 500 max. — 0.55 400–1150 860 5 min. Ceramic 16.73

VTD34H 70 0.2 365 -2 30 60 50 0.6 400–1100 900 40 min. Mini DIP 7.45

VTD34FH — — 350 -2 30 60 50 0.6 725–1150 940 40 min. Mini DIP IRT 7.45

VTD34SMH 70 0.2 365 -2 30 25 50 0.6 400–1100 900 50 SMT 7.45

VTD34FSMH 55 — 350 -2 30 80 max. 50 0.6 725–1150 940 40 min. SMT IRT 7.45

VTD205H 25 0.2 350 -2.6 30.72 20 0.6 800–1100 925 50 TO-92 IRT (Round Lens) 7.41

VTD205KH 80 0.2 365 -2.6 30 72 20 0.6 400–1100 925 50 TO-92 (Round Lens) 7.41

VTD206H 25 0.2 350 -2.6 30 72 20 0.6 750–1100 925 50 TO-92 IRT (Flat Lens) 7.41

VTD206KH 80 0.2 365 -2.6 30 72 20 0.6 400–1100 925 50 TO-92 (Flat Lens) 7.41

VTH2090H 800 — — — 10 70 15 0.6 400–1100 960 — Black Ceramic 84.64

Silicon PN—VTD Series (Alternate Source/Second Source)

Technical Specification

Table Key VTD Series / VTB Series

ISC Short-Circuit Current 940 nm,

H=0.5 mW/cm2 (VTD205, VTD206)

H=5 mW/cm2, 2850 K (VTD31AA, VTB Series)

100 Lux, 2850 K (VTD34, VTD205K)

100 Lux, 2856 K (VTD206K)

TC ISC ISC Temperature Coefficient

2850 K (VTD31AA, VTD34, VTD34F, VTB Series)

2856 K (VTD205, VTD205K, VTD206, VTD206K)

VOC Open-Circuit Voltage 940 nm,

H=0.5 mW/cm2 (VTD 205, VTD205K, VTD206, VTD206K)

2850 K (VTD31AA, VTD34, VTD34F)

TC VOC VOC Temperature Coefficient

2850 K (VTD31AA, VTD34, VTD34F, VTB Series)

2856 K (VTD205, VTD205K, VTD206, VTD206K)

IDDark Current

H=0, VR=2 V (VTB Series)

H=0, VR=10 V (VTD34, VTD34F, VTD205, VTD205K,

VTD206, VTD206K, VTB100)

H=0, VR=15 V (VTD31AA)

RSH Shunt Resistance

H=0, V=10 mV (VTB Series)

TC RSH RSH Temperature Coefficient

H=0, V=10 mV (VTB Series)

CJJunction Capacitance

H=0, VR=0 V, 1 MHz

(VTD205, VTD205K, VTD206, VTD206K)

@ 1 MHz, VR=0 V (VTD34, VTD34F)

H=0, V=0 V (VTD31AA, VTB Series)

tR/tRRise/Fall Time

@ RL=50 Ω, VR=5 V, 850 nm

(VTD205, VTD205K, VTD206, VTD206K)

@ RL=1 kΩLead, VR=10 V, 833 nm

(VTD34, VTD34F)

SRSensitivity @ Peak 365 nm (VTB Series)

range Spectral Application Range

pSpectral Response @ Peak

VBR Breakdown Voltage

Electro-optical characteristics @ 25˚C

Part Isc TC Isc Voc TC Voc IDRSH TC RSH CJSRλrange λpVBR Active Area

Number µA %/˚C mV mV/˚C pA max. G Ω

Ω%/˚C nF A/W nm nm V Package mm2

VTB100H 65 0.12 490 -2 500 1.4 -8 2 max. 0.1 320–1100 920 40 Flat Sidelooker 7.45

VTB1012H 13 0.12 490 -2 100 0.25 -8 0.31 0.09 320–1100 920 40 TO-46 1.60

VTB1012BH 1.3 0.02 420 -2 100 0.25 -8 0.31 — 330–720 580 40 TO-46 IRB 1.60

VTB1013H 13 0.12 490 -2 20 7 -8 0.31 0.09 320–1100 920 40 TO-46 1.60

VTB1013BH 1.3 0.02 420 -2 20 7 -8 0.31 — 330–720 580 40 TO-46 IRB 1.60

VTB1112H 60 0.12 490 -2 100 0.25 -8 0.31 0.19 320–1100 920 40 TO-46 Lensed 1.60

VTB1112BH 6 0.02 420 -2 100 0.25 -8 0.31 — 330–720 580 40 TO-46 IRB Lensed 1.60

VTB1113H 60 0.12 490 -2 20 7 -8 0.31 0.19 320–1100 920 40 TO-46 Lensed 1.60

VTB1113BH 60.02 420 -2 20 7 -8 0.31 — 330–720 580 40 TO-46 IRB Lensed 1.60

VTB4051H 200 0.12 490 -2 250 0.56 -8 3 0.1 320–1100 920 40 Ceramic 14.8

VTB5051H 130 0.12 490 -2 250 0.56 -8 3 0.1 320–1100 920 40 TO-5 14.8

VTB5051BH 13 0.02 420 -2 250 0.56 -8 3 — 330–720 580 40 TO-5 IRB 14.8

VTB5051JH 130 0.12 490 -2 250 0.56 -8 3 0.1 320–1100 920 40 TO-5 14.8

VTB5051UVH 130 0.12 490 -2 250 0.56 -8 3 0.1 200–1100 920 40 TO-5 14.8

VTB5051UVJH 130 0.12 490 -2 250 0.56 -8 3 0.1 200–1100 920 40 TO-5 14.8

VTB6061H 350 0.12 490 -2 2000 0.1 -8 8 0.1 320–1100 920 40 TO-8 37.7

VTB6061BH 35 0.02 420 -2 2000 0.1 -8 8 — 330–720 580 40 TO-8 IRB 37.7

VTB6061CIEH 12 — — — 2000 0.1 -8 8 — 475–650 555 — TO-8 37.7

VTB6061JH 350 0.12 490 -2 2000 0.1 -8 8 0.1 320–1100 920 40 TO-8 37.7

VTB6061UVH 350 0.12 490 -2 2000 0.1 -8 8 0.1 200–1100 920 40 TO-8 37.7

VTB6061UVJH 350 0.12 490 -2 2000 0.1 -8 8 0.1 200–1100 920 40 TO-8 37.7

VTB8341H 60 0.12 490 -2 100 1.4 -8 1 0.1 320–1100 920 40 Ceramic 5.16

VTB8440H 45 0.12 490 -2 2000 0.07 -8 1 0.1 320–1100 920 40 8 mm Ceramic 5.16

VTB8440BH 5 0.02 420 -2 2000 0.07 -8 1 — 330–720 580 40 8 mm Ceramic IRB 5.16

VTB8441H 45 0.12 490 -2 100 1.4 -8 1 0.1 320–1100 920 40 8 mm Ceramic 5.16

VTB8441BH 5 0.02 420 -2 100 1.4 -8 1 — 330–720 580 40 8 mm Ceramic IRB 5.16

VTB9412H 13 0.12 490 -2 100 0.25 -8 0.31 0.09 320–1100 920 40 6 mm Ceramic 1.60

VTB9412BH 1.3 0.02 420 -2 100 0.25 -8 0.31 — 330–720 580 40 6 mm Ceramic IRB 1.60

VTB9413H 13 0.12 490 -2 20 7 -8 0.31 0.09 320–1100 920 40 6 mm Ceramic 1.60

VTB9413BH 1.3 0.02 420 -2 20 7 -8 0.31 — 330–720 580 40 6 mm Ceramic IRB 1.60

Silicon PN—VTB Series (Blue Enhanced, Ultra High Dark Resistance)

Technical Specification

18 www.optoelectronics.perkinelmer.com

photodiodes

Photodiodes

Phototransistors

www.optoelectronics.perkinelmer.com 19

Description

Phototransistors are photodiode-amplifier combinations

integrated within a single silicon chip. These are combined to

overcome the major fault of photodiodes: unity gain. Many

applications demand a greater output signal from the photodetector

than can be generated by a photodiode alone. While the signal

from a photodiode can always be amplified through use of an

external op-amp or other circuitry, this approach is often not as

practical or as cost-effective as the use of phototransistors. The

phototransistor can be viewed as a photodiode whose output

photocurrent is fed into the base of a conventional small-signal

transistor. While not required for operation of the device as a

photodetector, a base connection is often provided, allowing the

designer the option of using base current to bias the transistor. The

typical gain of a phototransistor can range from 100 to over 1500.

Phototransistors can be used as ambient-light detectors. When

used with a controllable light source, typically an IRED, they

are often employed as the detector element for optoisolators and

transmissive or reflective optical switches.

All phototransistors are RoHS compliant.

Features

• Low-cost visible and near-IR

photodetection

• Available with gains from 100

to over 1500

• Moderately fast response times

• Available in a wide range of

packages including epoxy-coated,

transfer-molded, cast, hermetic

packages, chip form and surface

mounting technology

• Usable with almost any visible

or near-infrared light source such

as IREDs, neon, fluorescent,

incandescent bulbs, lasers, flame

sources, sunlight, etc.

• Same general electrical

characteristics as familiar signal

transistors

Typical Applications

• Computer/business equipment

• Write-protect control

• Margin controls—printers

• Industrial

• LED light source—light pens

• Security systems

• Safety shields

• Consumer

• Coin counters

• Lottery card readers

• Position sensors—joysticks

• Remote controllers—toys,

appliances, audio/visual

equipment

• Games—laser tag

• Camera shutter control

Principle of Operation

Phototransistors are solid-state light

detectors that possess internal gain.

They can be used to provide either

an analog or digital output signal.

Datasheets available upon request.

Absolute Maximum Ratings

Maximum Temperatures -25°C to 80°C (CR10TE, CR50TE)

Storage and Operating: -40°C to 100°C

-40°C to 110°C (VTT1015, VTT1016,

VTT1017, VTT1115, VTT1116, and VTT1117)

-40°C to 85°C (VTT7222, VTT7223,

VTT7225, VTT7122, VTT7123, and VTT7125)

-40°C to 70°C (VTT9002, VTT9003,

VTT9102, and VTT9103)

Continuous Power Dissipation: 50 mW

100 mW (VTT9002, VTT9003, VTT9102,

and VTT9103)

200 mW (CR10TE, CR50TE)

250 mW (VTT1015, VTT1016, VTT1017,

VTT1115, VTT1116, and VTT1117)

Derate above 30°C: 0.71 mW/˚C

2.5 mW/˚C (VTT9002, VTT9003, VTT9102,

and VTT9103)

3.12 mW/˚C (VTT1015, VTT1016, VTT1017,

VTT1115, VTT1116, and VTT1117)

0.91 mW/˚C (VTT7122, VTT7123, VTT7125)

Maximum Current: 25 mA

200 mA (VTT1015, VTT1016, VTT1017,

VTT1115, VTT1116, and VTT1117)

Lead-Soldering Temperature: 260°C (1.6 mm from case, 5 sec. max.)

phototransistors

NPN Phototransistors

0.25", small area, high speed

0.04", medium area, high sensitivity

0.05", large area, high sensitivity

20 www.optoelectronics.perkinelmer.com

Light Current Dark Current Angular

Part H fc (mW/cm2)nA VCE VBR(CEO) VBR(ECO) VCE(SAT) tR/tFResponse

Number mA min. VCE=5 V max. Volts Volts min. Volts min. Volts max. µsec, typ. θ1/2

VTT1222WH 1.9 100 (5) 10 20 50 6 0.25 2 ±40˚

VTT1223WH 1.5 100 (5) 10 20 40 6 0.25 3 ±40˚

VTT1225H 4100 (5) 100 10 30 5 0.25 1.5 ±5˚

VTT1226H 7.5 100 (5) 100 10 30 5 0.25 3 ±5˚

VTT1227H 12 100 (5) 100 10 30 5 0.25 4 ±5˚

VTT1322WH 0.8 100 (5) 10 20 50 6 0.25 2 ±40˚

VTT1323WH 1 100 (5) 10 20 40 6 0.25 3 ±40˚

VTT3122EH 1.2 100 (5) 100 20 40 6 0.25 2.5 ±8˚

VTT3123EH 4100 (5) 100 10 30 4 0.25 4 ±8˚

VTT3323LAH 2 20 (1) 100 10 30 5 0.25 3 ±10˚

VTT3324LAH 420 (1) 100 10 30 5 0.25 4 ±10˚

VTT3325LAH 620 (1) 100 10 30 5 0.25 5 ±10˚

VTT3423LAH 120 (1) 100 10 30 5 0.25 3 ±10˚

VTT3424LAH 220 (1) 100 10 30 5 0.25 4 ±10˚

VTT3425LAH 320 (1) 100 10 30 5 0.25 5 ±10˚

VTT7122H 1 100 (5) 100 10 30 5 0.25 2 ±36˚

VTT7123H 2 100 (5) 100 10 30 5 0.25 2 ±36˚

VTT7125H 4.5 100 (5) 100 10 30 5 0.25 2 ±36˚

VTT7222H 0.9 100 (5) 100 10 30 5 0.25 2 ±36˚

VTT7223H 1.8 100 (5) 100 10 30 5 0.25 2 ±36˚

VTT7225H 4 100 (5) 100 10 30 5 0.25 4 ±36˚

.025’’ x .025’’ NPN Phototransistors

Technical Specification

Table Key

ICLight Current

ICEO Dark Current H=0

VBR(CEO) Collector Breakdown IC=100 µA, H=0

VBR(ECO) Emitter Breakdown IE=100 µA, H=0

VCE(SAT) Saturation Voltage IC=1 mA, H=400 fc

tR/tFRise/Fall Time IC=1 mA, RL=100 Ω

Electro-Optical Characteristics @ 25°C

Light Current Dark Current Angular

Part H fc (mW/cm2)nA V

CE VBR(CEO) VBR(ECO) VCE(SAT) tR/tFResponse

Number mA min. VCE=5 V max. Volts Volts min. Volts min. Volts max. µsec, typ. θ1/2

VTT1212H 2 20 (1) 100 10 30 5 0.25 4 ±10˚

VTT1214H 420 (1) 100 10 30 5 0.25 6 ±10˚

VTT1312H 120 (1) 100 10 30 5 0.25 4 ±10˚

VTT1314H 2.4 20 (1) 100 10 30 5 0.25 6 ±10˚

VTT9002H 2100 (5) 100 10 30 6 0.55 4 ±50˚

VTT9003H 5100 (5) 100 10 30 6 0.55 6 ±50˚

VTT9102H 6 100 (5) 100 5 30 4 0.55 6 ±42˚

VTT9103H 13 100 (5) 100 5 30 4 0.55 10 ±42˚

.04’’ x .04’’ NPN Phototransistors

Technical Specification

Electro-Optical Characteristics @ 25°C

phototransistors

Clear T- 1 3/4 (5 mm) Plastic Package

VTT1212 VTT1223W VTT1227

VTT1214 VTT1225

VTT1222W VTT1226

IRT T-1 3/4 (5mm) Plastic Package

VTT1322W VTT1312

VTT1323W VTT1314

Coax Hermetic (with case lead)

VTT3122E VTT3123E

Clear Long T- 1 (3 mm) Plastic Package

VTT3323LA VTT3324LA VTT3325LA

IRT Long T- 1 (3 mm) Plastic Package

VTT3423LA VTT3424LA VTT3425LA

Molded, Lensed Lateral Package

VTT7122 VTT7123 VTT7125

IRT Molded, Lensed Lateral Package

VTT7222 VTT7223 VTT7225

Clear Epoxy TO-106 Ceramic Package

VTT9002 VTT9003

Epoxy Lensed TO-106 Ceramic Package

VTT9102 VTT9103

www.optoelectronics.perkinelmer.com 21

Phototransistors

Light Current Dark Current Angular

Part H fc (mW/cm2)nA VCE VBR(CEO) VBR(ECO) VCE(SAT) tR/tFResponse

Number mA min. VCE=5 V max. Volts Volts min. Volts min. Volts max. µsec, typ. θ1/2

VTT1015H 0.4 100 (5) 25 20 40 6 0.4 5 ±35˚

VTT1016H 1100 (5) 25 20 30 6 0.4 5 ±35˚

VTT1017H 2.5 100 (5) 25 10 20 4 0.4 8 ±35˚

VTT1115H 120 (1) 100 10 30 6 0.4 5 ±15˚

VTT1116H 2 20 (1) 100 10 30 4 0.4 8 ±15˚

VTT1117H 420 (1) 100 10 30 4 0.4 8 ±15˚

.05’’ x .05’’ NPN Phototransistors

Technical Specification

TO-46 Flat Window Package

VTT1015 VTT1016 VTT1017

TO-46 Lensed Package

VTT1115 VTT1116 VTT1117

Table Key

ICLight Current

ICEO Dark Current H=0

VBR(CEO) Collector Breakdown IC=100 µA, H=0

VBR(ECO) Emitter Breakdown IE=100 µA, H=0

VCE(SAT) Saturation Voltage IC=1 mA, H=400 fc

tR/tFRise/Fall Time IC=1 mA, RL=100 ΩElectro-Optical Characteristics @ 25°C

CR10TE

• Surface mounting device

• Solid state ceramic chip

• High thermal conductivity

• Special type (CR10TE-DLF) with

daylight filter on request

Peak Sensitivity Dark Active Rise/Fall

Part Spectral Wavelength Vce P-Current Current Area Time

Number Package* Range (nm) (V) (nA) (mm2)Orientation

CR10TE Ceramic 400–1070 850 40 3 400 0.19 10/10 High Vce

SMD (A1)

CR50TE Ceramic 400–1070 850 40 3 400 0.19 10/10 High Vce

SMD (A2)

Technical Specification

* All packages are listed on our website.

(@ 25°C unless otherwise noted)

Absolute Maximum Ratings

Maximum Temperatures -25°C to 85°C (CRS)

Storage and Operating: -40°C to 85°C

Lead-Soldering Temperature: 260°C (1.6 mm from case, 5 sec. max.)

Description

PerkinElmer Optoelectronics’ infrared switches are ideal for non-

contact sensing applications. The emitter is generally an IR LED and

the detector is either a phototransistor or a photodarlington.

Optoswitches, Optical Hybrids, and Custom Optical Assemblies

Optoswitches, optical hybrids, custom assemblies, photodiodes,

phototransistors, IR emitters, and photoconductive cells are

commonly used in industrial, commercial, and consumer

electronics applications. This product line is one of the broadest

in the industry and includes a variety of standard catalog

products as well as custom design and manufacturing capabilities.

Approximately 75% of the products shipped are custom designed

and tested to serve the needs of specific OEM applications.

Reflective Optoswitches

Reflective optical switches combine an infrared-emitting diode

(IRED) with an NPN phototransistor or photodarlington in a one-

piece, sealed, IR-transmitting plastic case or ceramic SMD-package.

Sealed construction improves resistance to moisture and debris.

Units are available with PC-board mounting leads (VTR16D1),

or 12-inch, #26 AWG flying leads (VTR17D1).

Transmissive Optoswitches

Interrupter-type optical switches combine an infrared-emitting

diode (IRED) with an NPN phototransistor. Units are available

in two different case styles; a one-piece, sealed, IR-transmitting

plastic case (VTL11 and VTL13 series) and an opaque case

(VTL23 series). Options also include apertures-over-detector

and/or emitter, and either PC-board mount leads or 12-inch,

#26 AWG leads (VTL13 only).

All infrared switches are RoHS compliant.

infrared switches

Features

• Contains no mechanical parts to

wear out

• Provides non-contact sensing

of objects

• Low power consumption,

compatible with solid-state

electronics

• Low cost

•Capable of sensing any opaque object

• Small size

• Custom mechanical configurations

available

• Can be specially selected or built

to meet the requirements of your

particular application

Typical Applications

• Printers and typewriters

• Paper

sensor

• Paper-feed detector

• Imprinting head position

detector

• Floppy disk drives

• Track-zero sensor

• Index sensor

• Disk-in sensor

• Vending machines

• Coin sensor

• Detection of goods

• Mechanism position

• Facsimiles

• Original width detection

• Initial position detection

• Final position detection

• Industrial

• Rotational speed / position

detection (encoder)

• Distance detection

• Object sensor

• VHS / VHSC / 8 mm VCR

• Tape start

• Tape load

• Tape end

• Copiers

• Paper-presence detection

• Toner-density control

• Paper-carrier detection

Datasheets available upon request.

22 www.optoelectronics.perkinelmer.com

General Characteristics

Parameter Symbol Conditions Input IRED Output Detector

Reverse Voltage VRIR=100 µA 2 V min.

Continuous Forward IFDerate 0.73 mA/°C 40 mA max.

Current above 30°C

Forward Voltage Drop VFIF=20 mA 1.8 V max.

Collector Breakdown VBR(CEO) IC=100 µA 30 V min.

Voltage

Emitter Breakdown VBR(ECO) IC=100 µA 5 V min.

Voltage IE=100 µA (VTR) 3 V min. (VTL23DxA)

4.5 V (CRS)

Power Dissipation PDDerate 0.91 mW/°C 50 mW max.

above 30°C

www.optoelectronics.perkinelmer.com 23

Infrared Switches

Light Current, IpDark Current

Part Test Conditions Test Conditions Output Element

Number mA min. IF mAV

CE Volts d inches (mm) µA max. IF mAV

CE Volts Detector Device

VTR16D1H 0.3 20 5 0.1 (2.5) 0.1 0 5 Phototransistor

VTR17D1H 0.3 20 5 0.1 (2.5) 0.1 0 5 Phototransistor

VTR24F1H 6.0 20 30 2.0 (50.8) — — — Photodarlington

VTR Series

Technical Specification

Light Current, IpDark Current Saturation Volts

Part Test Cond. Test Cond. Test Cond. Aperture Combination

Number mA min. IF mA VCE Volts nA max. IF mA VCE Volts Volts max. IF mA IC mA Emitter Detector

D1H 0.5 20 5 100 0 10 0.4 20 0.25 none none

D1-20H 0.15 20 5 100 0 10 0.4 20 0.25 0.02" w none

D3H 2 20 5 100 0 10 0.4 20 1.8 none none

D3-20H 0.6 20 5 100 0 10 0.4 20 1.8 0.02" w none

D5-20H 0.15 20 5 100 0 10 0.4 20 0.25 0.02" w 0.01" w

D6-20H 0.075 20 5 100 0 10 0.4 20 0.25 0.02" w 0.005" w

D7H 0.75 20 5 100 0 10 0.4 20 0.25 none 0.02" w

D7-20H 0.225 20 5 100 0 10 0.4 20 0.25 0.02" w 0.02" w

VTL11D (P.C.B. Mount Leads), 13D (12 inch, #26 AWG Leads) Series

Technical Specification

Specification Notes

The case material is polysulfone and should be cleaned with

alcohol or freon TF only. Avoid chlorinated hydrocarbons and

solvents such as acetone or toluene, as damage may result.

The light current is measured using a 90% reflective surface

at a specified distance.

The dark current is measured with the part totally shielded

from ambient light. With 2150 lux (200 from a cool white

fluorescent lamp perpendicular to the sensing axis, the

detector current will be typically 3 µA. The same illumination

concentric to the sensing axis will result in a detector current

of 50 µA. Equivalent light from an incandescent lamp will

result in significantly greater currents.

With the specified IRED forward current and no reflecting

surface, the crosstalk is typically less than 3 µA.

Accommodates most applications.

Specification Notes

The dark current is measured with the part totally shielded from

ambient light. With 2150 lux (200 from a cool white fluorescent

lamp perpendicular to the sensing axis, the detector current will

be typically 3 µA. Equivalent light from an incandescent lamp

will result in significantly greater currents.

The aperture used for these slotted switches are 0.04" (1.02 mm) high.

The case material is polysulfone and should be cleaned with

alcohol or freon TF only. Avoid chlorinated hydrocarbons and

solvents such as acetone or toluene, as damage may result.

VTL11D7-20, VTL13D7-20, accommodate most applications.

The other parts in this series are available only for specialized,

high-volume applications

Specification Notes

The dark current is measured with the part totally shielded

from ambient light.

VTL23D2A00 and VTL23D3A00 contains a visible light-

blocking dust cover over the apertures.

The plastic case can be damaged by chlorinated hydrocarbons

and ketones. Methanol isopropanol alcohols are recommended

as cleaning agents.

VTL23D1A22 accommodate most applications. The other

parts in this series are available only for specialized, high-

volume applications.

Aperture Length is 0.075"

Light Current, IpDark Current Saturation Volts

Part Test Cond. Test Cond. Test Cond. Aperture Combination

Number mA min. IF mA VCE Volts nA max. IF mA VCE Volts Volts max. IFmA ICmA Emitter Detector

VTL23D0A21H 0.2 20 10 100 0 10 0.4 20 0.1 0.02" w 0.01" w

VTL23D0A22H 0.2 20 10 100 0 10 0.4 20 0.1 0.02" w 0.02" w

VTL23D1A00H 0.5 20 10 100 0 10 0.4 20 0.4 0.04" w 0.04" w

VTL23D1A22H 0.5 20 10 100 0 10 0.4 20 0.4 0.02" w 0.02" w

VTL23D2A00H 2.5 20 10 100 0 10 0.6 20 1.8 0.04" w 0.04" w

VTL23D3A00H 1.0 10 10 100 0 10 0.4 10 0.8 0.04" w 0.04" w

VTL23DxA (P.C.B. Mount Leads) Series

Technical Specification

Infrared Interruptive Switches—

Reflective Optoswitches

VTR Series

Transmissive Optoswitches

VTL11d Series, VTL13D Series,

VTL23DxA Series

Collector Emitter Emitter Collector Dark Rise/Fall Forward Forward

Part Breakdown Breakdown Current time Voltage Current Wavelength

Number Package* (VCEO)(V

ECO)I

CEO (nA) tr/tf (ns) VF (V) IF (mA) (nm)

CRS20 Ceramic SMD (H) 40 4.5 400 10 1.2–1.4 60 950

Technical Specification

* All packages are listed on our website.

CRS20

• Surface mounting device

• complete ceramic housing

• High thermal conductivity

Description

Photocells or Light-Dependent Resistors can provide a very

economical and technically superior solution for many applications

where the presence or absence of light is sensed (digital operation)

or where the intensity of light needs to be measured (analog

operation).

Semiconductor light detectors can be divided into two major

categories: junction and bulk-effect devices. Junction devices,

when operated in the photoconductive mode, utilize the reverse

characteristic of a PN junction. Under reverse bias, the PN junction

acts as a light-controlled current source. Output is proportional

to incident illumination and is relatively independent of applied

voltage. Silicon photodiodes are examples of this type of detector.

In contrast, bulk-effect photoconductors have no junction. The

bulk resistivity decreases with increasing illumination, allowing

more photocurrent to flow. This resistive characteristic gives

bulk-effect photoconductors a unique quality: signal current from

the detector can be varied over a wide range by adjusting the

applied voltage. To clearly make this distinction, PerkinElmer

Optoelectronics refers to its bulk-effect photoconductors as

photoconductive cells or, simply, photocells.

Photocells are thin-film devices made by depositing a layer

of a photoconductive material on a ceramic substrate. Metal

contacts are evaporated over the surface of the photoconductor and

external electrical connection is made to these contacts. These thin

films of photoconductive material have a high sheet resistance.

Therefore, the space between the two contacts is made narrow

and interdigitated for low cell resistance at moderate light levels.

photocells

Features

• Lowest-cost visible detector

• Available in low-cost plastic-

encapsulated packages as well

as hermetic packages (TO-46,

TO-5, TO-8)

• Responsive to both very low light

levels (moonlight) and to very high

light levels (direct sunlight)

• Wide dynamic range: resistance

changes of several orders of

magnitude between "light" and

"no light"

• Low noise distortion

• Maximum operating voltages of 50

to 400 Volts are suitable for opera-

tion on 120/240 VAC

• Available in center-tap dual-cell

configurations as well as specially

selected resistance ranges for

special applications

• Easy to use in DC or AC circuits

• Usable with almost any visible or

near-infrared light source such as

LEDS; neon; fluorescent, incandes-

cent bulbs, lasers; flame sources;

sunlight; etc.

• Available in a wide range of

resistance values

Typical Analog Applications

• Auto-focus for slide projector

• Colorimetric test equipment

• Densitometer

• Electronic scales—dual-cell

• Automated rear-view mirror

Typical Digital Applications

• Automatic headlight dimmer

• Night light control

• Oil burner flame out

• Street light control

• Absence/presence (beam breaker)

• Position

sensor

Datasheets available upon request.

24 www.optoelectronics.perkinelmer.com

VT Series

www.optoelectronics.perkinelmer.com 25

Photocells

Resistance (Ohms) Sensitivity (γ,typ.) Response Time @ 1fc

Part 10 lux 2850 K 2 fc 2850 K Dark Material LOG (R10/R100) Max. Volts ms, typ.

Number min. typ. max. typ. min. sec. Type LOG (100/10) V, pk Rise (1-1/e) Fall (1/e)

VT20N1 8 k 16 k 24 k 8 k 200 k 5 0 0.8 100 78 8

VT20N2 16 k 34 k 52 k 17 k 500 k 5 0 0.8 100 78 8

VT20N3 36 k 72 k 108 k 36 k 1 M 5 0 0.8 100 78 8

VT20N4 76 k 152 k 230 k 76 k 2 M 5 0 0.8 200 78 8

VT23N1 20 k 40 k 60 k 20 k 500 k 5 3 0.85 100 35 5

VT23N2 42 k 86 k 130 k 43 k 1 M 5 3 0.85 100 35 5

VT23N3 90 k 180 k 270 k 90 k 2 M 5 3 0.85 100 35 5

VT30N1 6 k 12 k 18 k 6 k 200 k 5 0 0.75 100 78 8

VT30N2 12 k 24 k 36 k 12 k 500 k 5 0 0.8 200 78 8

VT30N3 24 k 48 k 72 k 24 k 1 M 5 0 0.8 200 78 8

VT30N4 50 k 100 k 150 k 50 k 2 M 5 0 0.8 300 78 8

VT30CT 10 k 20 k 30 k 10 k 500 k 5 0 0.8 200 78 8

VT33N1 20 k 40 k 60 k 20 k 500 k 5 3 0.9 100 35 5

VT33N2 40 k 80 k 120 k 40 k 1 M 5 3 0.9 200 35 5

VT33N3 80 k 160 k 240 k 80 k 2 M 5 3 0.9 200 35 5

VT33CT 60 k 120 k 180 k 60 k 1 M 5 3 0.9 200 35 5

VT Series

Technical Specification

Specification Notes

Photocells categorized into groups by resistance. All

groups must be purchased together and PerkinElmer

maintains the right to determine the product mix among

these groups.

Dimensions controlled at base of package.

Photocells are tested at either 1 fc or 10 lux. 2 typical

values shown in the tables are for reference only.

Cells are light-adapted at 30–50 fc.

The photocell “grid” pattern can vary from that shown.

PerkinElmer reserves the right to change mix grid patterns

on any standard product.

The resistance for any standard cell is controlled at only

one light level. If the resistance at other light levels is a

concern, please contact us.

Resistance (Ohms) Sensitivity (γ, typ.) Response Time @ 1fc

Part 10 lux 2850 K 2 fc 2850 K Dark Material LOG (R10/R100) Max. Volts ms, typ.

Number min. typ. max. typ. min. sec. Type LOG (100/10) V, pk Rise (1-1/e) Fall (1/e)

VT80N1 4 k 8 k 12 k 4 k 100 k 5 0 0.8 100 78 8

VT80N2 8 k 16 k 24 k 8 k 500 k 5 0 0.8 200 78 8

VT83N1 6 k 12 k 18 k 6 k 100 k 5 3 0.95 100 35 5

VT83N2 12 k 28 k 36 k 14 k 500 k 5 3 0.95 200 35 5

VT83N3 24 k 48 k 72 k 24k 1 M 5 3 0.95 200 35 5

VT83N4 50 k 100 k 150 k 50 k 2 M 5 3 0.95 200 35 5

VT83CT 30 k 60 k 90 k 30 k 1 M 5 3 0.90 100 35 5

VT90N1 6 k 12 k 18 k 6 k 200 k 5 0 0.8 100 78 8

VT90N2 12 k 24 k 36 k 12 k 500 k 5 0 0.8 100 78 8

VT90N3 25 k 50 k 75 k 25 k 1 M 5 0 0.85 100 78 8

VT90N4 50 k 100 k 150 k 50 k 2 M 5 0 0.9 100 78 8

VT93N1 12 k 24 k 36 k 12 k 300 k 5 3 0.9 100 35 5

VT93N2 24 k 48 k 72 k 24 k 500 k 5 3 0.9 100 35 5

VT93N3 50 k 100 k 150 k 50 k 500 k 5 3 0.9 100 35 5

VT93N4 100 k 200 k 300 k 100 k 500 k 5 3 0.9 100 35 5

VT Series

Technical Specification

Resistance (Ohms) Sensitivity (γ, typ.) Response Time @1fc

Part 10 lux 2850 K 2 fc 2850 K Dark Material LOG (R10/R100) Max. Volts ms, typ.

Number min. typ. max. typ. min. sec. Type LOG (100/10) V, pk Rise (1-1/e) Fall (1/e)

VT43N1 4 k 8 k 12 k — 300 k 30 3 0.9 250 90 18

VT43N2 8 k 16 k 24 k — 300 k 30 3 0.9 250 90 18

VT43N3 16 k 32 k 48 k — 500 k 30 3 0.9 400 90 18

VT43N4 33 k 66 k 100 k — 500 k 30 3 0.9 400 90 18

VT50N1 4 k 8 k 12 k 4 k 200 k 5 0 0.75 200 78 8

VT50N2 8 k 16 k 24 k 8 k 500 k 5 0 0.75 200 78 8

VT50N3 16 k 32 k 48 k 16 k 1 M 5 0 0.8 300 78 8

VT53N1 16 k 32 k 48 k 16 k 1 M 5 3 0.85 200 35 5

VT53N2 32 k 76 k 96 k 38 k 2 M 5 3 0.85 200 35 5

VT53N3 66 k 132 k 200 k 66 k 3 M 5 3 0.85 300 35 5

VT Series

Technical Specification

Table Key

R10 Resistance at E=10 lux light intensity

R 100 Resistance at E=100 lux light intensity

R01 Dark Resistance after 1 sec (E=0)

R05 Dark Resistance after 5 sec (E=0)

10/1oo Sensitivity log (R10/R100)/log (100 lux/10 lux)

peak Peak Spectral Sensitivity

Top Operating Temperature

Tst Storage Temperature

TC Thermal Coefficient

ton Rise Time to 63% of final I (R10)

toff Decay Time to 37% of initial I (R10)

Vmax Maximum Operating Voltage at E=0 lux

Pmax Power Dissipation at 25˚C Ambient Temperature

photocells

26 www.optoelectronics.perkinelmer.com

Typical Electro-Optical Characteristics Limit Values

Part R10 range R100 typ. R01 min. R05 min. γ10/100 λpeak Top range Tst range TC 10 lux ton typ. toff typ. Vmax. Pmax.

Number kΩ

ΩkΩ

ΩMΩ

Ωtyp. nm ˚C ˚C %/˚k msec msec V mW

A106009 4–11 2 0.04 0.12 0.65 600 -20–+70 -20–+80 0.4 50 40 100 90

A106011 9–20 3.5 0.06 0.18 0.65 600 -20–+70 -20–+80 0.3 60 40 150 90

A106012 16–33 5 0.18 0.5 0.7 600 -20–+70 -20–+80 0.35 50 35 150 90

A106013 27–94 8 0.5 1.5 0.8 600 -20–+70 -20–+80 0.4 35 30 150 90

A106014 77–340 15 1.5 5 0.9 600 -20–+70 -20–+80 0.5 25 20 150 90

A106031 60–130 23 0.4 1.2 0.65 600 -20–+70 -20–+80 0.3 60 40 300 90

A106032 120–210 35 1 3 0.7 600 -20–+70 -20–+80 0.35 50 35 300 90

A106033 200–580 50 3 9 0.8 600 -20–+70 -20–+80 0.4 35 30 300 90

A106034 500–1200 100 5 15 0.9 600 -20–+70 -20–+80 0.5 25 20 300 90

A105009 4–11 2 0.04 0.12 0.65 530 -20–+70 -20–+80 0.3 70 50 100 90

A105011 9–22 4 0.05 0.15 0.6 530 -20–+70 -20–+80 0.2 70 50 150 90

A105013 36–88 12 0.4 1.2 0.7 530 -20–+70 -20–+80 0.3 50 30 150 90

A10 Series

Technical Specification

Typical Electro-Optical Characteristics Limit Values

Part R10 range R100 typ. R01 min. R05 min. γ10/100 λpeak Top range Tst range TC 10 lux ton typ. toff typ. Vmax. Pmax.

Number kΩ

ΩkΩ

ΩMΩ

Ωtyp. nm ˚C ˚C %/˚k msec msec VmW

A906009 4–11 2 0.04 0.12 0.65 600 -20–+70 -20–+80 0.4 50 40 100 90

A906011 9–20 3.5 0.06 0.18 0.65 600 -20–+70 -20–+80 0.3 60 40 150 90

A906012 16–33 5 0.18 0.5 0.7 600 -20–+70 -20–+80 0.35 50 35 150 90

A906013 27–94 8 0.5 1.5 0.8 600 -20–+70 -20–+80 0.4 35 30 150 90

A906014 77–340 15 1.5 5 0.9 600 -20–+70 -20–+80 0.5 25 20 150 90

A906031 60–130 23 0.4 1.2 0.65 600 -20–+70 -20–+80 0.3 60 40 300 90

A906032 120–210 35 1 3 0.7 600 -20–+70 -20–+80 0.35 50 35 300 90

A906033 200–580 50 3 9 0.8 600 -20–+70 -20–+80 0.4 35 30 300 90

A906034 500–1200 100 5 15 0.9 600 -20–+70 -20–+80 0.5 25 20 300 90

A905012 18–44 7 0.15 0.45 0.65 530 -20–+70 -20–+80 0.2 60 40 150 90

A905013 36–88 12 0.4 1.2 0.7 530 -20–+70 -20–+80 0.3 50 30 150 90

A905014 70–200 20 1 3 0.75 530 -20–+70 -20–+80 0.3 40 30 150 90

A995011 9–22 4 0.05 0.15 0.6 530 -20–+70 -20–+80 0.2 70 50 150 90

A995012 18–44 7 0.15 0.45 0.65 530 -20–+70 -20–+80 0.2 60 40 150 90

A995013 36–88 12 0.4 1.2 0.7 530 -20–+70 -20–+80 0.3 50 30 150 90

A995014 70–200 20 1 3 0.75 530 -20–+70 -20–+80 0.3 40 30 150 90

A90 Series

Technical Specification

All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux.

A10 Series

www.optoelectronics.perkinelmer.com 27

Photocells

Typical Electro-Optical Characteristics Limit Values

Part R10 R100 typ. R01 min. R05 min. γ10/10 λpeak top

range

tst range TC 10 lux ton typ. toff typ. Vmax Pmax

Number kΩ

ΩkΩ

ΩmΩ

Ωmin. nm ˚C ˚C %/˚K msec msec V mW

U116012 20–50 8 0.12 0.36 0.7 550 -20–+70 -20–+80 0.3 50 40 150 50

U116013 35–220 15 0.4 1.2 0.85 550 -20–+70 -20–+80 0.35 40 30 150 50

U116014 150–1000 35 1 3 0.95 550 -20–+70 -20–+80 0.4 30 25 150 50

U116032 100–320 40 1 3 0.7 550 -20–+70 -20–+80 0.3 40 30 400 50

U116033 250–1100 75 2 6 0.85 550 -20–+70 -20–+80 0.35 30 25 400 50

U11 Series

Technical Specification

All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux.

Typical Electro-Optical Characteristics Limit Values

Part R10 range R100 typ. R01 min. R05 min. γ10/100 λpeak Top range Tst range TC 10 lux ton typ. toff typ. Vmax. Pmax.

Number kΩ

ΩkΩ

ΩMΩ

Ωtyp. nm ˚C ˚C %/˚k msec msec VmW

B906032 5–13 2 0.1 0.3 0.7 600 -20–+70 -20–+80 0.3 50 35 300 200

B906033 11–40 5 0.2 0.6 0.8 600 -20–+70 -20–+80 0.4 35 25 300 200

B90 Series

Technical Specification

All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux.

Typical Electro-Optical Characteristics Limit Values

Part R10 range R100 typ. R01 min. R05 min. γ10/100 λpeak Top range Tst range TC 10 lux ton typ. toff typ. Vmax. Pmax.

Number kΩ

ΩkΩ

ΩMΩ

Ωtyp. nm ˚C ˚C %/˚k msec msec V mW

M996011a 1.5–5 0.7 0.05 0.15 0.7 600 -20–+70 -20–+80 0.3 50 30 100 200

M996011b 0.8–2 0.4 0.05 0.15 0.65 600 -20–+70 -20–+80 0.3 40 30 100 200

M99 Series

Technical Specification

All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux.

Typical Electro-Optical Characteristics Limit Values

Part R10 range R100 typ. R01 min. R05 min. γ10/100 λpeak Top range Tst range TC 10 lux ton typ. toff typ. Vmax. Pmax.

Number kΩ

ΩkΩ

ΩMΩ

Ωtyp. nm ˚C ˚C %/˚k msec msec V mW

D996011 1.5–3 0.6 0.01 0.03 0.6 600 -20–+70 -20–+80 0.3 60 35 150 200

D996012 2.8–6 0.8 0.03 0.09 0.7 600 -20–+70 -20–+80 0.35 50 30 150 200

D996013 4.5–13 1.5 0.1 0.3 0.8 600 -20–+70 -20–+80 0.4 35 25 150 200

D996022 8–15 2.5 0.09 0.27 0.7 600 -20–+70 -20–+80 0.35 50 30 150 200

D996023 12–35 4 0.5 1.5 0.8 600 -20–+70 -20–+80 0.4 35 25 150 200

D99 Series

Technical Specification

All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux.

M99 Series

D99 Series

U11 Series

B90 Series

Description

PerkinElmer Optoelectronics has been a leading manufacturer of

analog optical isolators (AOI) for over twenty years and makes a

broad range of standard parts under its trademark VACTROL®.

There are many kinds of optical isolators, but the most common

is the LED/phototransistor type. Other familiar types use output

elements such as light-sensitive SCRs, Triacs, FETs and ICs. The

major application for these silicon-based devices is to provide

electrical isolation of digital lines connected between different

pieces of equipment. The principle of operation is very simple.

When an input current is applied to the LED, the output photo-

transistor turns on. The only connection between the LED and

phototransistor is through light—not electricity—thus the term

optical isolator. These optical isolators are primarily digital in

nature with fast response times for interfacing with logic gates.

Rise and fall times of a few microseconds, faster for some

isolators, are typical.

The AOI also uses an optical link between input and output.

The input element is an LED and the output element is always

a photoconductive cell or, simply a photocell. Together, the

coupled pair act as an electrically variable potentiometer. Since

the output element of the AOI is a resistor, the voltage applied

to this output resistor may be DC and/or AC and the magnitude

may be as low as zero or as high as the maximum voltage rating.

Because the input will control the magnitude of a complex

waveform in a proportional manner, this type of isolator is an

analog-control element. AOIs may be used in the ON-OFF mode

but the fastest response time is only in the millisecond range.

A level-sensitive Schmitt trigger is required between the AOI

and logic gates when used in digital circuits.

analog optical isolators

Features

• High input-to-output voltage

isolation

• True resistance element output

• Single- or dual-element outputs

available

• Low cost

• Suitable for AC or DC use

• Wide range of input-to-output

characteristics

• Low drive current

• Low “on” resistance, high “off ”

resistance

• Complete solid-state construction

Typical Applications

• DC isolators

• Feedback elements in automatic

gain control circuits

• Audio limiting and compression

• Noiseless switching

• Logic

interfacing

• Remote gain control for amplifiers

• Photochoppers

• Noiseless potentiometers

Principle of Operation

Analog Optical Isolators are used in

many different types of circuits and

applications.

Available Related Products

VTL5C series

LT3011 series

LT9900 series

Datasheets available upon request.

28 www.optoelectronics.perkinelmer.com

Absolute Maximum Ratings @ 25°

Maximum Temperatures

Storage and Operating: –40°C to 75°C

Cell Power: 175 mW

Derate Above 30°C: 3.9 mW/°C

LED Current: 40 mA

Derate Above 30°C: 0.9 mA/°C

LED Reverse Breakdown Voltage: 3.0 V

LED Forward Voltage Drop @ 20 mA: 2.0 V (1.65 V Typ.)

VTL5C8 = 2.8 V (2.2 V typ.)

VTL5C9 = 2.8 V (2.2 V typ.)

VTL5C10 = 2.8 V (2.2 V typ.)

Minimum Isolation Voltage @

70% Rel. Humidity: 2500 VRMS

Output Cell Capacitance: 5.0 pF

Input/Output Coupling Capacitance: 0.5 pF

Analog Optical Isolators—

VTL5C Series

PerkinElmer Optoelectronics’ line of

AOIs consists of a light-tight package

which houses a light source and one or

more photoconductive cells. Through

control of the input current or voltage

applied to the AOI, the output resistance

can be varied. The output resistance can

be made to switch between an “on” and

“off” state or made to track the input

signal in an analog manner. Because a

small change in input signal can cause a

large change in output resistance, AOIs

have been found to provide a very eco-

nomical and technically superior solu-

tion for many applications.

www.optoelectronics.perkinelmer.com 29

Optical Isolators

On Resistance Off Resistance Response Time

Part Material Input Dark @ 10 sec. Dynamic Cell Turn-on to 63% Turn-off (Decay)

Number Type Current Adapted typ. min. Slope Range Voltage Final RON typ. to 100Ω

Ωmax.

1 mA 20 kΩ

VTL5C1 1 10 mA 600 Ω50 MΩ15 100 db 100 V 2.5 ms 35 ms

40 mA 200 Ω

1 mA 5.5 kΩ

VTL5C2 0 10 mA 800 Ω1 MΩ24 69 db 200 V 3.5 ms 500 ms

40 mA 200 Ω

5 mA 2.5 kΩ

VTL5C2/2 0 40 mA 700 Ω1 MΩ20 65 db 50 V 7 ms 150 ms

1 mA 30 kΩ

VTL5C3 3 10 mA 5 kΩ10 MΩ20 75 db 250 V 2.5 ms 35 ms

40 mA 1.5 kΩ

1 mA 55 kΩ

VTL5C3/2 3 40 mA 2 kΩ10 MΩ19 71 db 100 V 3 ms 50 ms

1 mA 1.2 kΩ

VTL5C4 4 10 mA 125 Ω400 kΩ18.7 72 db 50 V 6 ms 1.5 sec

40 mA 75 Ω

1 mA 1.5 kΩ

VTL5C4/2 4 10 mA 150 Ω400 kΩ8.3 68 db 30 V 6 ms 1.5 sec

1 mA 75 kΩ

VTL5C6 0 10 mA 10 kΩ100 MΩ16.7 88 db 250 V 3.5 ms 50 ms (1 MΩ)

40 mA 2 kΩ

0.4 mA 5 kΩ

VTL5C7 7 2 mA 1.1 kΩ1 MΩ5.7 75 db 50 V 6 ms 1 sec. (100 kΩ)

1 mA 4.8 kΩ

VTL5C8 0 4 mA 1.8 kΩ10 MΩ8 80 db 500 V 4 ms 60 ms

16 mA 1 kΩ

VTL5C9 1 2 mA 630 Ω50 MΩ7.3 112 db 100 V 4 ms 50 ms

VTL5C10 4 1 mA 400 Ω400 kΩ3.8 75 db 50 V 1 ms 1.5 sec

VTL Series

Technical Specification

Specification Notes

LED Current: Since the input has a substantially constant

voltage drop, a current-limiting resistance is required.

ON Resistance: Dark adapted resistance measured after 24

or more hours of no input.

OFF Resistance: Measured 10 sec. after removal of the input.

The ultimate resistance is many times greater than the value

at 10 sec.

Response Time: Ascent measured to 63% of final conductance

from the application of 40 mA input. The conductance rise time

to a specified value is increased at reduced input drive while

the conductance decay time to a specified value is decreased.

Typical matching and tracking from 0.4 to 40 mA is 25%.

Measured 5 sec. after removal of the input. The ultimate

resistance is many times greater than the value at 5 sec.

VTL5C9 response times are based on a 2 mA input. VTL5C10

response times are based on a 10 mA input

for ascent time and a 1 mA input for decay time.

Table Key LT Series

R1mA Output Resistance at If=1 mA

R20mA Output Resistance at If=20 mA

R01 Dark Resistance after 1 sec (If=0)

R05 Dark Resistance after 5 sec (If=0)

Top Operating Temperature Range

Tst Storage Temperature Range

ViInput/Output Insulation Voltage

TC Module Thermal Coefficient

Ton Rise Time to 63% of final R20

Toff Decay Time to 37% of initial R20

CsOutput Capacity

Vmax Operating Voltage at If=0

Pmax Output Power Dissipation at 25˚C

Typical Electro-Optical Characteristics Limit Values

Part R1mA R20mA typ. R01 min. R05 min. top range tst range Vi min. TC 10 lux ton toff typ. Cs max. Vmax Pmax

Number kΩ

ΩkΩ

ΩMΩ

Ω˚C ˚C V %/˚K msec msec pF V mW

LT3011-2 — 1 3 9 -20–+60 -20–+80 2500 2 10 10 2 50 50

LT3011 — 0.32 0.1 0.3 -20–+70 -20–+70 2500 0.4 50 40 2 100 75

LT9909 0.7–1.2 0.35 0.06 0.18 -20–+70 -20–+70 1000 0.4 40 40 1 50 50

LT9910 1.2–2.5 0.7 0.06 0.18 -20–+70 -20–+70 1000 0.4 40 40 1 50 50

LT9911 2–5 1.5 0.1 0.3 -20–+70 -20–+70 1000 0.4 50 40 1 100 50

LT9912 4.5–9 2 0.2 0.6 -20–+70 -20–+70 1000 0.4 40 30 1 100 50

LT9913 8–16 3.5 0.5 1.5 -20–+70 -20–+70 1000 0.4 35 30 1 100 50

LT9914 14–25 6 0.7 2.1 -20–+70 -20–+70 1000 0.4 35 30 1 100 50

LT Series

Technical Specification

All readings taken at standard light A (2854 K color temperature) after 2 hours of preillumination at 500 lux.

Input/Output Coupling Capacity: 1 pF max.

Reverse Voltage: 4 V max.

Diode Forward Current: 25 mA max. DC

LT Series

Description

PerkinElmer Optoelectronics’ Channel Photomultiplier (CPM)

is an ultra-high sensitivity optical detector capable of replacing

conventional photomultipliers (PMTs). This device uses a proprietary

detector principle to produce ultra-high gain and dynamic range,

extremely low noise, and fast response within a compact form

factor. These detectors are available as components or in complete

modules designed for DC operation and photon counting. All

modules are gateable by an external TTL pulse for time-resolved

measurements.

Modules

• MD Series DC-Module—contains the CPM, a high-voltage

power supply, an amplifier with I/U conversion, and an active

quenching circuit for high light protection.

• MP Series Photon Counting Module—

The Photon Counting

Head MP

series

contains the Channel Photomultiplier, a high-

voltage power supply, a discrimination amplifier and a pulse

shaper for fast output pulses.

• MH Series Channel Photomultiplier Head Module—The

Channel Photomultiplier module MH series is designed for

both photon counting and DC operating modes. It contains an

adjustable high-voltage supply and a Channel Photomultiplier.

• MP 96X-2, MP 97X-2 Single Photon Counting Module—

These modules are specially designed for particle sizing

measurement with 530 nm and 632 nm laser excitation light.

Based on the standard multialkali photocathode, the sen-

sitive diameter is reduced to 2 mm in order to achieve an

excellent low dark- count performance.

Power Supply

• CHV 30N—A self-contained high-voltage supply specially

designed for the Channel Photomultipliers CPM C900, C1300

and C1900. It provides the matching voltages for the cathode,

channel entrance, and channel end.

• CHV 30P—The equivalent power supply for positive high voltage,

suitable for photon counting and pulse mode applications.

All given values are nominal/typical at 20˚C ambient temperature;

specifications are subject to change without notice.

Principle of Operation

The CPM converts a very low light level into photoelectrons

through a semitransparent photocathode deposited on the inner

surface of the entrance window. On their way from the cathode to

the anode, the photoelectrons pass through a narrow semiconduc-

tive channel. Each time the electrons hit the inner surface of the

curved channel, multiple secondary electrons are emitted. This effect

occurs multiple times along the path, leading to an avalanche

effect with a gain exceeding 108. The curved shape of the glass tube

improves the multiplication effect.

Please ask for our RoHS compliant products.

channel photomultipliers

30 www.optoelectronics.perkinelmer.com

CPM Features

•

Ultra-high anode sensitivity up to 107A/W

• Extremely low dark current, typically

3 pA @ 106gain

• Very low equivalent noise input (down to

10-17 W)

• High stability in dark current (“no bursts”)

• High gain exceeding 108

• Compact dimensions

• High dynamic range

• Wide spectral response through multiple

window materials

• High resolution

• Fast response time

• High immunity to magnetic fields

• Rugged design

Module Features

• High dynamic range

• No cooling required

• Very high stability in noise level

• Adjustable gain

• Active quenching circuit for high light

protection

• Gateable CPM input

• Optical fiber read-out possible

• 5 volts operating voltage

• Monitor voltage output

Typical Applications

• Photon detection and counting

• Fluorescence and luminescence

measurements

• Analytical and clinical instrumentation

• Particle sizing (molecular imaging)

Available Related Products

CPM:

1/3" C900 series

1/2" C1300 series

3/4" C1900 series

CPM modules:

MD series

MP series

MH series

MP 96X-2, MP 97X-2

MP-RS232 series

High voltage power supply:

CHV 30N

CHV 30P

Datasheets available upon request.

Channel Photomultipliers

www.optoelectronics.perkinelmer.com 31

Channel Photomultipliers—

CPM Formats 1/2"and 3/4"

CPM—1/3" C 900 Series

Technical Specification

Spectral Dark Counts

Response @140 nm @200 nm @400 nm @560 nm

Dark Current

per Second

/nm Model A/W A/W A/W A/W ENI (W) pA Model (cps)

115–200 C1311 6x1052x10-17 8C1311P 0.4

115–320 C1321 1x1062x10-17 40 C1321P 4

165–320 C1322 1x1062x10-17 40 C1322P 4

165–650 C1342 3x1062x10-17 320 C1342P 40

185–650 C1343 3x1062x10-17 320 C1343P 40

300–650 C1344 3x1062x10-17 320 C1344P 40

165–850 C1362 2x1068x10-17 4000 C1362P 400

185–850 C1363 2x1068x10-17 4000 C1363P 400

165–900 C1372 2x1063x10-16 20000 C1372P 2000

185–900 C1373 2x1063x10-16 20000 C1373P 2000

165–650 C1382 3x1061x10-17 100 C1382P 10

185–650 C1383 3x1061x10-17 100 C1383P 10

300–650 C1384 3x1061x10-17 100 C1384P 10

165–750 C1392 3x1062x1062x10-17 200 C1392P 20

185–750 C1393 3x1062x1062x10-17 200 C1393P 20

CPM—1/2" C 1300 Series

Technical Specification

Channel Photomultipliers—

CPM Format 1/3"

Spectral Dark Counts

Response @140 nm @200 nm @400 nm @560 nm

Dark Current

per Second

/nm Model A/W A/W A/W A/W ENI (W) pA Model (cps)

115–200 C911 6x1051x10-17 2C911P 0.1

115–200 C921 1x1061x10-17 10 C921P 1

165–320 C922 1x1061x10-17 10 C922P 1

165–650 C942 3x1061x10-17 80 C942P 10

185–650 C943 3x1061x10-17 80 C943P 10

300–650 C944 3x1061x10-17 80 C944P 10

165–850 C962 2x1064x10-17 1000 C962P 100

185–850 C963 2x1064x10-17 1000 C963P 100

165–900 C972 2x1061.5x10-16 5000 C972P 500

185–900 C973 2x1061.5x10-16 5000 C973P 500

165–650 C982 3x1066x10-18 25 C982P 3

185–650 C983 3x1066x10-18 25 C983P 3

300–650 C984 3x1066x10-18 25 C984P 3

165–750 C992 3x1062x1061x10-17 50 C992P 5

185–750 C993 3x1062x1061x10-17 50 C993P 5

Useful Area: Min. 5 mm diameter Ambient Temperature (°C): Max. 50

Window Material: MgF2, Quartz or UV Glass Photocathode Material: CsI, CsTe, Low-noise Bialkali, Bialkali,

Electron Multiplication: Channel Electron Multiplier Low-noise Multialk., Multialk.

Supply Voltage (V): 2400 (Max. 3000) Extended Red Multialk, yellow enhanced.

Current Amplification: 5x107Linear Anode Current: Max. (DC linearity limit) 10% of Bias Current

Bias Current (

A): 50 Response Time Rise Time (ns): 3

Anode Current: Max. 10 µA (Max. 30 sec.) Pulse Width/FWHM (ns): 6

Single Photo Electron gain: 3x106Peak to Valley: 10:1

Useful Area: Min. 9 mm diameter Peak to Valley: 10:1

Window Material: MgF2, Quartz, Photocathode Material: CsI, CsTe, Low-noise Bialkali, Bialkali,

UV Glass or Borosil. Low-noise, Multialk., Multialk.

Supply Voltage (V): 2400 (Max. 3000) Extended Red Multialk, yellow enhanced.

Current Amplification: 5x107Linear Anode Current: Max. (DC linearity limit) 10% of Bias Current

Bias Current (µA): 50 Anode Current: Max. 10 µA (Max. 30 sec.)

Response Time Rise Time (ns): 3Single Photoelectron gain: 3x106

Pulse Width/FWHM (ns): 6Ambient Temperature (°C): Max. 50

channel photomultipliers

Test conditions: T = 20˚C

Voltage channel entrance: VSET=0–2.9 V

Voltage cathode: Vgate=low or open

Long-term stability @ VSET: <<1 E-5

Weight: 45 g

Operating temperature: 0–50°C

Storage temperature: -20–60°C

32 www.optoelectronics.perkinelmer.com

Useful Area: Min. 15 mm diameter Ambient Temperature (°C): Max. 50

Window Material: MgF2, Quartz, Photocathode Material: CsI, CsTe, Low-noise Bialkali, Bialkali,

UV Glass or Borosil. Low-noise Multialk., Multialk.

Electron Multiplication: Channel Electron Multiplier Extended Red Multialk, yellow enhanced.

Supply Voltage (V): 2400 (Max. 3000) Linear Anode Current: Max. (DC linearity limit) 10% of Bias Current

Current Amplification: 5x107Response Time Rise

Bias Current (

A): 50 Time (ns): 3

Anode Current: Max. 10 µA (Max. 30 sec.) Pulse Width/FWHM (ns): 6

Single Photoelectron gain: 3x106Peak to Valley: 10:1

Spectral Dark Counts

Response @140 nm @200 nm @400 nm @560 nm

Dark Current

per Second

/nm Model A/W AW A/W A/W ENI (W) pA Model (cps)

115–200 C1911 6x1053x10-17 20 C1911P 1

115–320 C1921 1x1063x10-17 100 C1921P 10

165–320 C1922 1x1063x10-17 100 C1922P 10

165–650 C1942 3x1063x10-17 800 C1942P 100

185–650 C1943 3x1063x10-17 800 C1943P 100

300–650 C1944 3x1063x10-17 800 C1944P 100

165–850 C1962 2x1061x10-16 10000 C1962P 1000

185–850 C1963 2x1061x10-16 10000 C1963P 1000

165–900 C1972 2x1065x10-16 50000 C1972P 5000

185–900 C1973 2x1065x10-16 50000 C1973P 5000

165–650 C1982 3x1062x10-17 250 C1982P 25

185–650 C1983 3x1062x10-17 250 C1983P 25

300–650 C1984 3x1062x10-17 250 C1984P 25

165–750 C1992 3x1062x1063x10-17 500 C1992P 50

185–750 C1993 3x1062x1063x10-17 500 C1993P 50

Part Voltage Channel Voltage Output Long Term Output Supply

Number Entrance Cathode Current Stability typ. Ripple typ. Voltage

CHV30N -2900 V max. -3000 V max. 100 µA max. < 1E-5 < 50 mVpp 5 V

Power Supply—CHV30N

Technical Specification

Test conditions: T = 20˚C

Voltage Anode: @ VSET=0–3 V

Voltage cathode: 190 V—when gated

Voltage channel entrance: @ VA≥1400 V

Long-term stability @ VSET: <<1 E-5

Weight: 45 g

Operating temperature: 0–50°C

Storage temperature: -20–60°C

Part Voltage Voltage Voltage Channel Output Long Term Output Supply

Number Anode Cathode typ. Entrance typ. Current Stability typ. Ripple typ. Voltage

CHV30P +3000 V max. 0 V 90 V 100 µA max. < 1E-5 < 30 mVpp 5 V

Power Supply—CHV30P

Technical Specification

Power Supply

CHV30N (CHV30P) and

a CPM of the C9xx series

CPM—3/4" C 1900 Series

Technical Specification

www.optoelectronics.perkinelmer.com 33

Channel Photomultipliers

Spectral Dark Current/Offset Dark Counts

Dark Current

Dark Counts

Response Voltage @1x106Gain per Second pA per Second

/nm Model ENI (W) & 1 V/20 nA Model (cps) Model @

5x107Gain

Model ENI (W) (cps)

165–650 MD 942 1x10-17 3 pA/150 µV MP 942 10 MH 942 80 MH 942P 1x10-17 10

185–650 MD 943 1x10-17 3 pA/150 µV MP 943 10 MH 943 80 MH 943P 1x10-17 10

165–850 MD 962 4x10-17 30 pA/1.5 mV MP 962 100 MH 962 1000 MH 962P 4x10-17 100

MP 962-2 40

185–850 MD 963 4x10-17 30 pA/1.5 mV MP 963 100 MH 963 1000 MH 963P 4x10-17 100

MP 963-2 40

165–900 MD 972 1.5x10-16 200 pA/10 mV MP 972 500 MH 972 5000 MH 972P 1.5x10-16 400

MP 972-2 160

185–900 MD 973 1.5x10-16 200 pA/10 mV MP 973 500 MH 973 5000 MH 973P 1.5x10-16 400

MP 973-2 160

165–650 MD 982 6x10-18 1 pA/50 µVMP 982 3 MH 982 25 MH 982P 6x10-18 3

185–650 MD 983 6x10-18 1 pA/50 µVMP 983 3 MH 983 25 MH 983P 6x10-18 3

300–650 MD 984 6x10-18 1 pA/50 µVMP 984 3 MH 984 25 MH 984P 6x10-18 3

165–750 MD 992 1x10-17 2 pA/100 µV MP 992 5MH 992 50 MH 992P 1x10-17 5

185–750 MD 993 1x10-17 2 pA/100 µV MP 993 5MH 993 50 MH 993P 1x10-17 5

CPM Module—1/3" 900 Series

Technical Specification

Spectral Dark Current/Offset Dark Counts

Dark Current

Dark Counts

Response Voltage @1x106Gain per Second pA per Second

/nm Model ENI (W) & 1 V/20 nA Model (cps) Model @

5x107Gain

Model ENI (W) (cps)

165–650 MD1342 2x10-17 12 pA/600 µV MP1342 40 MH1342 320 MH1342P 2x10-17 40

185–650 MD1343 2x10-17 12 pA/600 µV MP1343 40 MH1343 320 MH1343P 2x10-17 40

165–850 MD1362 8x10-17 120 pA/6 mV MP1362 400 MH1362 4000 MH1362P 8x10-17 400

185–850 MD1363 8x10-17 120 pA/6 mV MP1363 400 MH1363 4000 MH1363P 8x10-17 400

165–900 MD1372 3x10-16 800 pA/40 mV MP1372 2000 MH1372 20000 MH1372P 3x10-16 2000

185–900 MD1373 3x10-16 800 pA/40 mV MP1373 2000 MH1373 20000 MH1373P 3x10-16 2000

165–650 MD1382 1x10-17 4 pA/200 µVMP1382 10 MH1382 100 MH1382P 1x10-17 10

185–650 MD1383 1x10-17 4 pA/200 µVMP1383 10 MH1383 100 MH1383P 1x10-17 10

300–650 MD1384 1x10-17 4 pA/200 µVMP1384 10 MH1384 100 MH1384P 1x10-17 10

165–750 MD1392 2x10-17 8 pA/400 µV MP1392 20 MH1392 200 MH1392P 2x10-17 20

185–750 MD1393 2x10-17 8 pA/400 µV MP1393 20 MH1393 200 MH1393P 2x10-17 20

CPM Module—1/2" 1300 Series

Technical Specification

Spectral Dark Current/Offset Dark Counts

Dark Current

Dark Counts

Response Voltage @1x106Gain per Second pA per Second

/nm Model ENI (W) & 1 V/20 nA Model (cps) Model @

5x107Gain

Model ENI (W) (cps)

165–650 MD1942 3x10-17 30 pA/1.5 mV MP1942 100 MH1942 800 MH1942P 3x10-17 100

185–650 MD1943 3x10-17 30 pA/1.5 mV MP1943 100 MH1943 800 MH1943P 3x10-17 100

165–850 MD1962 1x10-16 300 pA/15 mV MP1962 1000 MH1962 10000 MH1962P 1x10-16 1000

185–850 MD1963 1x10-16 300 pA/15 mV MP1963 1000 MH1963 10000 MH1963P 1x10-16 1000

165–900 MD1972 5x10-16 2 nA/100 mV MP1972 5000 MH1972 50000 MH1972P 5x10-16 5000

185–900 MD1973 5x10-16 2 nA/100 mV MP1973 5000 MH1973 50000 MH1973P 5x10-16 5000

165–650 MD1982 2x10-17 10 pA/500 µVMP1982 25 MH1982 250 MH1982P 2x10-17 25

185–650 MD1983 2x10-17 10 pA/500 µVMP1983 25 MH1983 250 MH1983P 2x10-17 25

300–650 MD1984 2x10-17 10 pA/500 µVMP1984 25 MH1984 250 MH1984P 2x10-17 25

165–750 MD1992 3x10-17 16 pA/800 µV MP1992 50 MH1992 500 MH1992P 3x10-17 50

185–750 MD1993 3x10-17 16 pA/800 µV MP1993 50 MH1993 500 MH1993P 3x10-17 50

CPM Module—3/4" 1900 Series

Technical Specification

CPM Modules—

3/4" 1900 Series

Photocathode Diameter: 5 mm (MP 9xx-2 types: 2 mm) Photocathode Material: Low-noise Bialkali, Bialkali, Low-noise Multialk.,

Window Material: Quartz or UV Glass Multialk. Extended Red Multialk, yellow enhanced.

Additional models on request Quantum Efficiency: 20% typical (Ext. Red MA: 10% typical)

Photocathode Diameter: Min. 9 mm Photocathode Material: Low-noise Bialkali, Bialkali, Low-noise Multialk.,

Window Material: Quartz or UV Glass Multialk. Extended Red Multialk, yellow enhanced.

Additional models on request Quantum Efficiency: 20% typical (Ext. Red MA: 10% typical)

Photocathode Diameter: Min. 15 mm Photocathode Material: Low-noise Bialkali, Bialkali, Low-noise Multialk.,

Window Material: Quartz or UV Glass Multialk. Extended Red Multialk, yellow enhanced.

Additional models on request Quantum Efficiency: 20% typical (Ext. Red MA: 10% typical)

Description

PerkinElmer Optoelectronics provides photon counting modules

based on both APDs and innovative Channel Photomultipliers.

APD Based Single Photon Counting Modules

The Single Photon Counting Module (SPCM) is a self-contained

photon counter which covers the wavelength range from 400 nm

to 1100 nm, with photon detection efficiencies exceeding 60%

at 650 nm. It has an integral 2-stage TE cooler, cooler controller,

amplifier, discriminator and TTL output driver. It also contains

a high-voltage DC-to-DC converter and is powered from a single

5 V source. The module utilizes a patented active-quench

circuit which allows it to count over 30 million photons per

second. The photosensitive area is 180 µ, and units are

available with dark-count rates less than 25 counts / second.

SPCM-AQ4C Single Photon Counting Array

The SPCM-AQ4C is a 4-channel photon counting card capable

of detecting single photons of light over a wavelength range

from 400 nm to 1100 nm. Each channel is independent from

the others. The SPCM-AQ4C utilizes a unique silicon avalanche

photodiode (SliK™) with a circular active area whose peak

photon-detection efficiency exceeds 60% at 650 nm. Each

photodiode is both thermoelectrically cooled and temperature

controlled, ensuring stabilized performance despite changes

in the ambient temperature.

All standard Single Photon Counting Modules are RoHS

compliant.

photon counting modules

Features

• Peak photon-detection efficiency

@ 650 nm: 65% typical

• Active area: SPCM-AQR-1X: 180 µm

• User friendly

• Gated input

• Single +5 V supply

Typical Applications

• Particle sizing

• Ultra-sensitive fluorescence

• Photon-correlation spectroscopy

• LIDAR

• Optical range finding

• Adaptive optics

• Astronomical observation

Datasheets available upon request.

34 www.optoelectronics.perkinelmer.com

Single Photon Counting

Module – SPCM

SPCM-AQ4C Single Photon

Counting Array

www.optoelectronics.perkinelmer.com 35

Photon Counting Modules

Parameter Typical Parameter Typical

Supply current 0.5 Amps Supply voltage 5 V

Power cable total resistance 0.2 ΩCase operating temperature 5–40°C

Active area (diameter) @ min. Pd 175 µm

Photon detection efficiency (Pd) @

400 nm 5%

650 nm 65% Output pulse width 31ns

830 nm 45%

1060 nm 2%

Pd variation at constant case ±1–±3% Pd variation 5°C to 40°C case ±4–±10%

temperature (2 h @ 25°C) temperature

Dark count (cps) = Dark count (cps) =

SPCM-AQR-10 1000–1500 SPCM-AQR-14 50–100

SPCM-AQR-11 500–1000 SPCM-AQR-15 50 max.

SPCM-AQR-12 250–500 SPCM-AQR-16 25 max.

SPCM-AQR-13 100–250

Average dark count variation Average dark count variation

at constant case temperature at 5°C to 40°C case

(6 hrs @ 25°C) temperature

SPCM-AQR-10/11/12/13 ±10% max. SPCM-AQR-10/11/12/13 ±20% max.

SPCM-AQR-14/15/16 ±1σ max.SPCM-AQR-14/15/16 ±2σ max.

Single-photon timing 500 ps Dead time (Count rates 30 ns

resolution below 5 Mc/s)

Output count rate before saturation 30 Mc/s Afterpulsing probability 0.5%

Linearity correction factor Gating turn on/off

@1 Mc/s 1.02 (50 Ω

Ωoutput)

@5 Mc/s 1.19 Disable = TTL Low 26 ns

@10 Mc/s 1.48 Enable = TTL High 52 ns

@20 Mc/s 2.82

@25 Mc/s 4.91

Settling time following power Threshold setting required on

up (1% stability) @ 1 meg 15 S counter for digital output 1 V

counts/sec and 25°C pulse (terminate in 50 Ω

Ω)

Gate threshold voltage: Gate threshold voltage:

(@ Vsupply = 5 V) (@ Vsupply = 5 V)

Low level (sink current >90 mA) 0 V–0.4 V High level (sink current >30 mA) 3.5–5.25 V

SPCM-AQR-1X Series

Technical Specification

Parameter Typical Parameter Typical

Supply currents: Maximum power consumption: Counts/Second

@+2 V 1 Amp @+2 V 6 Watts max.

@+5 V 0.2 Amps @+5 V 5 Watts max.

@+30 V 0.01 Amps @+30 V 1.2 Watts max.

Supply voltage Photon detection efficiency

(per channel)

1.95 V–2.05 V @400 nm 2.5%

4.75 V–5.25 V @650 nm 60%

29 V–31 V @830 nm 45%

Operating temperature (heatsink) 5˚C–40˚C Dark count (per channel) 500 counts/sec.

Average dark count variation per ±10% Average dark count variation per ±20%

channel @ constant heatsink temp. channel @ 5˚ to 40˚C heatsink temp.

Timing resolution 500 ps Dead time 50 ns

Output pulse width 25 ns Maximum count rate* 4 Mc/s

Continuous 1.5 Mc/s Afterpulsing probability 0.3%

Gate threshold voltage: Gate threshold voltage:

(@ Vsupply = 5 V) (@ Vsupply = 5 V)

Low level (sink current >90 mA) 0 V–0.4 V High level (source current >30 mA) 3.5 V–5.25 V

SPCM-AQ4C

Technical Specification

Test Conditions: T=22˚C

Test Conditions: T=22˚C *500 ms duration, 25% duty cycle

36 www.optoelectronics.perkinelmer.com

Description

Light Emitting Diodes (LEDs) are solid-state P-N junction

devices that emit light when forward biased. An IRED is an

Infrared Emitting Diode, a term specifically applied to

PerkinElmer IR emitters. Unlike incandescent lamps, which emit

light over a very broad range of wavelengths, LEDs emit light

over such a narrow bandwidth that they appear to be emitting

a single “color”. Their small size, long operating lifetimes, low

power consumption, compatibility with solid-state drive

circuitry, and relatively low cost make LEDs the preferred light

source in many applications.

LEDs are made from a wide range of semiconductor materials.

The emitted peak wavelength depends on the semiconductor

material chosen and how it is processed. LEDs can be made that

emit in the visible or near-infrared part of the spectrum.

The P-N junction is formed by doping one region of the material

with donor atoms and the adjacent region with acceptor atoms.

Like all P-N junction devices, LEDs exhibit the familiar diode

current-voltage characteristics. LEDs emit light only when they

are biased in the forward direction. Under forward-biased

conditions, carriers are given enough energy to overcome the

potential barrier existing at the junction. After crossing the junction,

these carriers will recombine. A percentage of the carriers will

recombine by a radiative process in which the hole-electron

recombination energy is released as a photon of light. The

remaining carriers recombine by a non-radiative process and give

up their energy in the form of heat. The amount of light generated,

or power output of the LED, varies almost linearly with forward

current. Doubling the forward current approximately doubles

the power output.

880 nm IREDs

This series of infrared emitting diodes (IREDs) consists of three

standard chips in nine different packages that provide a broad

range of mounting, lens and power-output options.

940 nm IREDs

This series of infrared emitting diodes (IREDs) consists of two

standard chips in three different packages.

All infrared emitting diodes are RoHS compliant.

infrared emitting diodes

Features 880 nm

• Nine standard packages in

hermetic and low-cost epoxy

• End- and side-radiating packages

• Graded

output

• High efficiency GaAIAs, 880 nm

LPE process delivers twice the

power of conventional GaAs

940 nm emitters

Features 940 nm

• Three standard packages in

hermetic and low-cost epoxy

• End-radiating

packages

• High power GaAs, 940 nm

LPE process

Features 770 nm, 870 nm, 950 nm

•Multiple SMD-packages

on ceramic substrate

• High thermal conductivity

• Superior light uniformity

•Wide viewing angle

• End-to-end and side-to-side

stackable

Typical Applications

• Computer/business equipment

• Write-protect control

• Margin controls—printers

• Industrial

• LED light source—light pens

• Security systems

• Safety shields

• Consumer

• Coin counters

• Lottery card readers

• Position sensors—joysticks

• Remote controllers—toys,

appliances, audio/visual

equipment

• Games—laser tag

• Camera shutter control

Principle of Operation

Because they emit at wavelengths

which provide a close match to the

peak spectral response of silicon

photodetectors, both GaAs and

GaAIAs IREDs are often used with

phototransistors.

Datasheets available upon request.

Infrared Emitting Diodes—

VTE Formats 880 nm and 940 nm

CR50IRDA

• Surface mounting device www.optoelectronics.perkinelmer.com 37

Infrared Emitting Diodes

Output Forward Drop

Irradiance EeIrradiance Cond.Radiant Total Test Current VF@ IFT Half Power

Part mW/cm2Distance Diameter Intensity Ie Power IFT mA volts Beam Angle

Number min. typ. mm mm mW/sr min. POmW typ. Pulsed typ. max. θ1/2 typ.

VTE1063H 3.8 5 36 6.4 49 80 1000 2.8 3.5 ±35˚

VTE1163H 22 28 36 6.4 285 110 1000 2.8 3.5 ±10˚

VTE1261H 33.9 36 6.4 39 20 100 1.5 2 ±10˚

VTE1262H 45.2 36 6.4 52 25 100 1.5 2 ±10˚

VTE1281-1H 2.5 3.3 36 6.4 32 20 100 1.5 2 ±10˚

VTE1281-2H 56.5 36 6.4 65 25 100 1.5 2 ±10˚

VTE1281FH 0.16 0.21 36 6.4 2.1 20 100 1.5 2 ±45˚

VTE1281W-1H 1.2 1.6 36 6.4 16 20 100 1.5 2 ±25˚

VTE1281W-2H 2.5 3.3 36 6.4 32 25 100 1.5 2 ±25˚

VTE1285H 35.5 36 6.4 39 20 100 1.5 2 ±8˚

VTE1291-1H 2.5 3.3 36 6.4 32 20 100 1.5 2 ±12˚

VTE1291-2H 56.5 36 6.4 65 25 100 1.5 2 ±12˚

VTE1291W-1H 1.2 1.6 36 6.4 16 20 100 1.5 2 ±25˚

VTE1291W-2H 2.5 3.3 36 6.4 32 25 100 1.5 2 ±25˚

VTE1295H 3 5.5 36 6.4 39 20 100 1.5 2 ±8˚

VTE3175LH 0.65 — 13.6 5.1 1.2 — 20 1.3 1.8 ±10˚

VTE3176LH 1.65 — 13.6 5.1 3.1 — 20 1.3 1.8 ±10˚

VTE3372LAH 2 2.6 10.16 2.1 2 3 20 1.3 1.8 ±10˚

VTE3374LAH 4 5.2 10.16 2.1 4.1 5 20 1.3 1.8 ±10˚

VTE7172H 0.4 0.6 16.7 4.6 1.1 2.5 20 1.3 1.8 ±25˚

VTE7173H 0.6 0.8 16.7 4.6 1.7 5 20 1.3 1.8 ±25˚

VTE 880 nm Series

Technical Specification

Output Forward Drop

Irradiance EeIrradiance Cond.Radiant Total Test Current VF@ IFT Half Power

Part mW/cm2Distance Diameter Intensity Ie Power IFT mA volts Beam Angle

Number min. typ. mm mm mW/sr min. POmW typ. Pulsed typ. max. θ1/2 typ.

VTE1013H 2.1 2.7 36 6.4 27 30 1000 1.9 2.5 ±35˚

VTE1113H 12 15 36 6.4 156 30 1000 1.9 2.5 ±10˚

VTE3322LAH 1 1.3 10.16 2.1 1 1.5 20 1.25 1.6 ±10˚

VTE3324LAH 2 2.6 10.16 2.1 2 2.5 20 1.25 1.6 ±10˚

VTE 940 nm Series

Technical Specification

Electro-Optical Characteristics @ 25°C

GaAlAs Infrared Emitting Diodes

TO-46 Flat Window Package

VTE1063

TO-46 Lensed Package

VTE1163

T- 1 3/4 (5 mm) Plastic Package

VTE1261 VTE1281F VTE1291-2

VTE1262 VTE1281W-1 VTE1291W-1

VTE1281-1 VTE1281W-2 VTE1291W-2

VTE1281-2 VTE1291-1

T- 1 3/4 (5 mm) Bullet Package

VTE1285 VTE1295

Coax Hermetic (with case lead)

VTE3175L VTE3176L

Long T-1 (3 mm) Plastic Package

VTE3372LA VTE3374LA

Molded Lateral Package

VTE7172 VTE7173

GaAs Infrared Emitting Diodes

TO-46 Flat Window Package

VTE1013

TO-46 Lensed Package

VTE1113

Long T-1 Plastic Package

VTE3322LA VTE3324LA

Peak Radiant Flux Rise/Fall Forward Forward

Part Wave- φ

φeTime Voltage VF Current

Number Package* length 50 mA 20 mA tr/tf (ns) 50 mA 20 mA IF Orientation

CR10IRD Ceramic SMD (A1) 770 6.3 2.4 40/30 1.75 1.6 75 Anode

CR10IRDA Ceramic SMD (A1) 870 20 8.2 30/15 1.5 1.4 75 Anode

CR10IRH Ceramic SMD (A1) 870 10.6 4.5 1500/800 N/A 1.35 75 Anode

CR10IRK Ceramic SMD (A1) 950 11.4 4.4 500/500 1.35 1.2 80 Anode

CR50IRD Ceramic SMD (A2) 770 6.3 2.4 40/30 1.75 1.6 75 Anode

CR50IRDA Ceramic SMD (A2) 870 20 8.2 30/15 1.5 1.4 75 Cathode

CR50IRH Ceramic SMD (A2) 870 10.6 4.5 1500/800 N/A 1.35 75 Anode

CR50IRK Ceramic SMD (A2) 950 11.4 4.4 500/500 1.35 1.2 80 Cathode

Technical Specification

* All packages are listed on our website.

Description

Pulsed Laser Diodes

These devices range in wavelength from 850 nm to 1550 nm

and are produced using Molecular Beam Epitaxy (MBE) and

MOCVD growth techniques. Fiber optic pigtailed devices

employ an advanced fibre alignment process yielding highly

stable fiber to laser diode positioning. Alternative packages and

fiber optic core diameters may be supplied on a custom basis.

Multiple Epi-Cavity Lasers

In order to multiply the power output of our laser diodes while

not increasing the drive current, we offer epitactically stacked

devices which contain a series of 2 to 3 active laser diode layers.

This way the double or triple power output (compared to single

devices) is generated within a height of 10 µm. The width of the

optically active area on the laser crystal is variable, standard

types have 75 and 225 µm.

High Energy Laser Diodes—Quasi CW Lasers

These devices have been designed specifically to meet the

demanding requirements of laser initiated ordnance (LIO)

applications. Product offerings include a 9.0 mm TO-style

package and an 8 pin miniDIL pigtailed package equipped with

a rear facet monitor photodiode and 100/140 Ìm optical fiber.

The 980 nm laser chip employs advanced epitaxial materials

and processing techniques, providing reliable high optical

power output capability and significant power retention at

elevated temperatures. Alternate package outlines and fiber

optic core diameters may be considered on a custom basis.

Please ask for our RoHS compliant products.

Typical Applications

• Laser range finding

• LIDAR

• High speed switching

• Laser

scanning

• Fiber optic instrumentation

• YAG laser simulation

Datasheets available upon request.

38 www.optoelectronics.perkinelmer.com

laser diodes

www.optoelectronics.perkinelmer.com 39

Laser Diodes

Peak Output Peak Forward Pulse Maximum Beam Diverg. Number

Part Preferred Power Current Width Duty Factor Q¨xQ^ (deg.) of Diode

Number Package Pko (W) IF (A) tw (ns) DF (%) FWHM Elements

PFAS1S03H TO-52 5.5 7 50 0.025 12x30 1

PFAS1S09H TO-52 17 20 50 0.025 12x30 1

PFAS1S12H TO-52 26 30 50 0.025 12x30 1

PFAS1S16H TO-52 34 40 50 0.025 12x30 1

PFAS2S09H TO-52 34 20 50 0.025 12x30 2

PFAS2S12H TO-52 52 30 50 0.025 12x30 2

PFAS3S12H TO-52 78 30 50 0.025 12x30 3

Multiple Quantum Well Types–850 nm

Technical Specification

Test conditions: T = 22°C

Peak Output Peak Forward Pulse Maximum Beam Diverg. Number

Part Preferred Power Current Width Duty Factor Q¨xQ^ of Diode

Number Package Pko (W) IF (A) tw (ns) DF (%) (deg.) Elements

PGAS1S03H TO-52 5.5 7 150 0.1 10x25 1

PGAS1S06H TO-52 12 15 150 0.1 10x25 1

PGAS1S09H TO-52 18 22 150 0.1 10x25 1

PGAS1S12H TO-52 24 30 150 0.1 10x25 1

PGAS1S16H TO-52 33 40 150 0.1 10x25 1

PGAS1S24H TO-52 49 60 150 0.1 10x25 1

PGAS3S06H TO-52 34 15 150 0.1 10x30 3

PGAS3S09H TO-52 50 22 150 0.1 10x30 3

PGAS3S12H TO-52 67 30 150 0.1 10x30 3

PGAS4S12H TO-52 90 30 150 0.1 10x30 4

PGAS4S16H TO-52 120 40 150 0.1 10x30 4

Multiple Quantum Well Types–905 nm–PGA Series

Technical Specification

Test conditions: T = 22°C

Laser Diode S-Package

Laser Diode O-Package

Laser Diode AA-Package

40 www.optoelectronics.perkinelmer.com

laser diodes

Peak Output Peak Forward Pulse Maximum Beam Diverg. Number

Part Standard Power Current Width Duty Factor Q¨xQ^ (deg.) of Diode

Number Package Pko (W) IF (A) tw (ns) DF (%) FWHM Elements

PVGR1S06H CD9.0CAP 4 20 200 0.05 20x40 1

PVGS1S06H TO-52 4 20 200 0.05 20x40 1

PVGR2S06H CD9.0CAP 8 20 100 0.025 20x40 2

PVGS2S06H TO-52 8 20 100 0.025 20x40 2

PVGR4S12H CD9.0CAP 50 75 50 .025 20x40 4

Double Heterostructure Types–1550 nm

Technical Specification

Test conditions: T = 22°C

Peak Output Peak Forward Pulse Maximum Beam Diverg. Number

Part Standard Power Current Width Duty Factor Q¨xQ^ of Diode

Number Package Pko (W) IF (A) tw (ns) DF (%) (deg.) Elements

PGEW1S03H TO-52 plastic 4.5 7 30 0.0075 10x25 1

PGEW1S09H TO-52 plastic 15 25 30 0.0075 10x25 1

PGEW2S09H TO-52 plastic 30 25 30 0.0075 10x30 2

PGEW3S09H TO-52 plastic 45 25 30 0.0075 10x30 3

Multiple Quantum Well Types–905 nm–PGEW Series

Technical Specification

Test conditions: T = 22°C

Laser Diode W-Package

Laser Diode R-Package

Laser Diode M-Package

www.optoelectronics.perkinelmer.com 41

Laser Diodes

Centre Peak Output Peak Forward Pulse Maximum Beam Diverg. Fibre Optic

Part Standard Wavelength Power Current Width Duty Factor Q¨xQ^ (deg.) Core/Clad

Number Package I0(nm) Pko (W) IF (A) tw (ns) DF (%) FWHM Diam. (µm)

C86153E-12 14 pin DIL 850 1.0 5 200 0.1 — 62.5/125

C86119EH 10/32 COAX 1064 2 4 200 0.1 10x40 —

C86120E-10 14 pin DIL 1064 0.4 4 200 0.1 — 100/140

Double Heterostructure and Quantum Well Types–850 nm and 1064 nm

Technical Specification

Test conditions: T = 22°C

DPGA and TPGA laser diodes are based on the PGA type. Response time is below 1 ns.

Maximum Emitter Beam Diverg. Output Pulse Max Peak

Laser Duty Factor Size Q¨xQ^ (deg.) Power Width Current Number of

diode DF (%) (µm2) FWHM (W) tw (ns) (A) Cavities

DPGAS1S03H 0.1 75x10 10x25 15 100 10 2

TPGAS1S03H 0.1 75x10 10x25 23 100 10 3

DPGAS1S09H 0.1 225x10 10x25 48 100 30 2

TPGAS1S09H 0.1 225x10 10x25 75 100 30 3

TPGAS2S09H 0.1 225x175 10x30 142 100 30 2x3

TPGAS3S09H 0.1 225x325 10x30 200 100 30 3x3

Multiple Epi-Cavity Lasers 905 nm, TO-52

Technical Specification

Peak Output Peak Forward Pulse Maximum Beam Diverg. Fibre Optic

Part Standard Power Current Width Duty Factor Q¨xQ^ (deg.) Core/Clad

Number Package Pko (W) IF (A) tw (ms) DF (%) FWHM Diam. (µm)

C86118EH CD9.0CAP 1.5 2 10 10 10x35 —

C86155E-10 miniDIL 1.2 2 10 10 — 100/140

C86159E-09 miniDIL 2 4 10 10 — 200/240

Quantum Well Types–980 nm

Technical Specification

Test conditions: T = 22°C

Comparison of the Optical Near

Field of Laser Diodes with One,

Two or Three Epitaxial Layers

The near-field height of single, dual,

and triple epitaxial cavity lasers is

1, 7, and 10 µm, respectively, with

a width of 225 µm each. Multiple

epitaxial cavity lasers with smaller

widths (for example, 75 µm for

coupling into multimode fibers) are

also available.

Laser Diode F-Package

Please ask for additional package

options.

Maximum Peak Output Peak Forward Pulse

Laser Duty Factor Power Current Width Number of

diode DF (%) Pko (W) IF (A) tw (ns) Cavities

DPGEW1S09H 0.1 50 30 100 2

TPGEW1S09H 0.1 75 30 100 3

Multiple Epi-Cavity Lasers 905 nm, Plastic, TPGEW series

Technical Specification

Description

Line scan sensors are ideal for imaging objects in motion on

webs or conveyors. Applications range from inspection of lead

frames and labels to scanning mail and parcels.

P-Series Linear Photodiode Array Imagers

In P-series linear imagers, PerkinElmer has combined the best

features of high-sensitivity photodiode array detection and high-

speed, charge-coupled scanning to offer an uncompromising

solution to the increasing demands of advanced imaging

applications. These high-performance imagers feature low noise,

high sensitivity, impressive charge-storage capacity, and lag-free

dynamic imaging in a convenient 1-output architecture. The

14 µm square contiguous pixels in these imagers reproduce

images with minimum information loss and artifact generation,

while their unique photodiode structure provides excellent blue

response extending below 200 nm in the ultraviolet.

The two-phase CCD readout registers require only modest clocking

voltages, yet achieve excellent charge-transfer efficiency.

Additional electrodes provide independent control of exposure

and antiblooming. Finally, high-sensitivity readout amplifiers

provide a large-output signal to relax the noise requirements

on the camera electronics that follow. These versatile imagers

are available in array lengths of 512 to 4096 elements with

either low-cost glass or UV-enhanced fused silica windows.

PerkinElmer Optoelectronics also maintains capabilities to

manufacture line scan imagers up to 8192 pixels combined

with 4 outputs and 7 or 14µm pixels with existing designs.

Contact PerkinElmer for more information.

All line scan imagers are RoHS compliant.

line scan imagers

Features

• 2500:1 dynamic range

• Ultra-low image lag

• Electronic exposure control

• Antiblooming control

• Square pixels with 100%

fill factor

• Extended spectral range –

200–1000 nm

Typical Applications

• High-speed document reading

• Web inspection

• Mail

sorting

• Production measurement

• Position sensing

• Spectroscopy

Principle of Operation

Line scan sensors are ideal for

imaging objects in motion on webs

or conveyors.

Datasheets available upon request.

42 www.optoelectronics.perkinelmer.com

Line Scan Imagers—P Series

www.optoelectronics.perkinelmer.com 43

Line Scan Imagers

Pixel Spectral Response Pixel Horizontal

Part Pixel Count Size Number of Range Data Rate Dynamic Clocking

Number Elements µm Outputs nm MHz Range typ.

RL0512P 512 14x14 1 200–1000 40 2500:1 2 ø @ 5 V

RL1024P 1024 14x14 1 200–1000 40 2500:1 2 ø @ 5 V

RL2048P 2048 14x14 1 200–1000 40 2500:1 2 ø @ 5 V

HL2048P 2048 14 2 200–1000 80 2500:1 2 ø @ 5 V

HL4096P 4096 14 2 200–1000 80 2500:1 2 ø @ 5 V

P Series

Technical Specification

Operating Temperature: 0˚C min. to +55˚C max.

Storage Temperature: -25˚C min. to +85˚C max.

Lag: <1%

Saturation Voltage: 600 mV

Spectral Sensitivity Curve

350250 450 550 650 750 850 950 1050

Wavelength (nm)

Responsivity (V/ µJ/cm

)

Right Scale

Left Scale

QE (%)

Description

For nearly thirty years, PerkinElmer Optoelectronics has been

a leader in the development of sensors for spectroscopy. In

spectroscopy and other instrumentation applications, large pixels,

very high charge storage capacity, low readout noise and dark

current, and direct access to the charge packet are all critical

to delivering the high dynamic range and linear response

demanded. The CMOS photodiode array architecture meets

all of these needs in a way no other sensor technology can

match.

L-Series Visible Range Spectroscopy Arrays

PerkinElmer Optoelectronics’ L-series CMOS linear photodiode

arrays offer a high-quality, low-cost solution for spectroscopy

and colorimetry applications in the 300–1000 nm range. The

L-Series family’s combination of high sensitivity, low dark current,

low switching noise and high saturation charge provides excellent

dynamic range and great flexibility in setting integration time.

L-series sensors consist of a linear array of silicon photodiodes,

each connected to a MOS switch for readout controlled by an

integrated shift register scanning circuit. Under external clock

control, the shift register sequentially enables each of the

switches, directing the charge on the associated photodiode to

an output line. A dummy output provides clock noise cancellation.

L-series devices are mounted in ceramic side-brazed, 22-pin,

dual-inline packages with ground and polished fused silica

windows and are pin-compatible with earlier PerkinElmer SB-

and TB-series sensors.

L-series models are available with pixel spacings of 25 µm

and 50 µm and lengths from 128 to 1024 pixels. All models

feature a 2500 µm pixel aperture to simplify alignment

in spectroscopic instruments.

All CMOS photodiode arrays are RoHS compliant.

cmos photodiode arrays

Features

• 2.5 mm photodiode aperture

• Extremely low dark leakage

current

• Low power dissipation

• Clock-controlled sequential

readout at rates up to 1 MHz

• Single-supply operation with

HCMOS-compatible inputs

• Single shift register design

• Wide dynamic range

• Differential video output for

clock noise cancellation

• High saturation charge 10 pC

(25 µm) or 20 pC (50 µm)

• Antiblooming function for low

crosstalk

• Line Reset Mode for simultaneous

reset of all photodiodes

• Wide spectral response:

300 to 1000 nm

• Polished fused silica window

• On-chip diodes (two) for

temperature monitoring

Typical Applications

• Spectroscopy

• Colorimetry

Datasheets available upon request.

44 www.optoelectronics.perkinelmer.com

L-Series Linear CMOS

Spectroscopy Sensor—

25 or 50 µm Pitch, 2.5 mm Aperture

• 128, 256, 512 or 1024

photodiode elements with 25 µm

center-to-center spacing

• 128, 256, or 512 photodiode

elements with 50 µm

center-to-center spacing

www.optoelectronics.perkinelmer.com 45

CMOS Photodiode Arrays

Video Capacitance Saturation Saturation Dark

Part @ 5 V bias @ 2.5 V bias Sensitivity Exposure Charge Dynamic Current typ.

Number pF pF C/J/cm2nJ/cm2pC Range pA

RL1201 — 6.7 2x10-4 50 10 70,000 0.2

RL1202 — 10.2 2x10-4 50 10 70,000 0.2

RL1205 — 15.4 2x10-4 50 10 70,000 0.2

RL1210 — 28.7 2x10-4 50 10 70,000 0.2

RL1501 9.1 — 4x10-4 50 20 100,000 0.4

RL1502 14 — 4x10-4 50 20 100,000 0.4

RL1505 25 — 4x10-4 50 20 100,000 0.4

L Series

Technical Specification

Sensitivity Exposure/

Saturation Charge: Measured at 2.5 V video line bias

average 600-700 nm, includes 8% window loss

Dark Current: Maximum dark current ≤1.5 x average dark current

Spectral Response Peak: 650 nm, Range: 300–1000 nm typ.

Operating Temperature: 0˚C min. to 55˚C max.

Storage Temperature: -78˚C min. to +85˚C max.

Center-to-center spacing: RL12XX, 25 µm

RL15XX, 50 µm

Quantum Efficiency

0350250 450 550 650 750 850 950 1050

Wavelength (nm)

QE (%)

46 www.optoelectronics.perkinelmer.com

The new SmartBlue™ digital linescan cameras incorporate

the latest in photodiode array technology based on the industry

standard Reticon® devices with state of the art electronics and

a robust industrial camera housing. The linescan photodiode

array is a Pinned Photodiode Charge Couple Device which

allows for high sensitivity, fast readout, while maintaining high

dynamic range, and low image lag.

The new SmartBlue™ cameras are cost effective high perform-

ance digital linescan cameras, and feature a CameraLink™

digital interface. These cameras feature geometrically precise

photodiode CCD image sensor with 14 um square pixels with

resolutions of 512, 1024, 2048 and 4096 pixels. This “next

generation” array can achieve data rates up to 80 MHz with

superior noise immunity, precise linearity, and high CTE.

The SmartBlue™ digital cameras are designed for high line

rate applications with low to moderate light conditions and

where small size, and low cost are required.

All SmartBlueTM cameras are RoHS compliant.

SmartBlue™

Features

•High Speed, up to 80 MHz data rate.

• 14 µm square pixels in 512, 1024,

2048 or 4096 element resolutions.

• Small size 101.6 x 57.2 x 38.1 mm

• 8/10/12- bit output format

•High line rates up to 68 kHz

• 66 db Dynamic Range

• High Sensitivity Pinned Photo

Diode CCD Sensor

• CameraLink™ base output

• User Controlled Smart Pixel

Correction

• Antiblooming control

• Single 12 VD.C. power supply

• Electronic exposure control

• Adjustable gain levels

• Real time status LEDs

• CE mark certified

Typical Applications

• High speed inspection

•Postal / parcel sorting

• Web inspection

• Surface inspection

• OCR / barcode reading

General Characteristics

Pixel Size 14x14 µm

Number of Pixels 512, 1024, 2048, 4096

Window Material Glass / Fused Silica

Spectral Range 200–1100 nm

Data Rate 40 x 1 or 40 x 2 MHz

Output Format 8 / 10 / 12 bits

Data Interface CameraLink™, Base

Control Interface CameraLink™ serial

Input Supply 12 +/-10% V.D.C

Dynamic Range 66 dB

SmartBlue 4096

SmartBlue 512, 1024, 2048

Principle of Operation

The two-point Flat Field pixel correc-

tion circuits give the user the flexibility

of correcting video data to compensate

for non-uniformities in lighting, lens, or

CCD sensor variations. Adjustable gain

and offset controls allow users to com-

pensate for variations in illumination

found in the “real-world” applications.

The robust design in conjunction

with PerkinElmer’s ultra modern

manufacturing techniques allows the

SmartBlue™ camera to deliver consis-

tent, reliable performance while the

rugged industrial design metal housing

provides the maximum protection in

a variety of harsh environments and

factory floor conditions.

SmartBlue™ cameras transform light

imaged during an exposure period into

a digital video signal. Antiblooming

structures within the CCD sensor

ensure superior performance over a

wide range of lighting conditions. User

defined control is possible for line rate,

exposure time, video gain and offset.

SmartBlue™ cameras have an internal

self diagnostics with real time status

LEDs in addition to a test pattern mode

to allow the user to quickly debug and

isolate potential problems within an

imaging system. In the self diagnostic

test pattern mode, an internal pattern

generator will output data via the

CameraLink™ interface while the status

LEDs will indicate operation of the

camera communication control signals.

The SmartBlue™ linescan cameras

may be interfaced to any CameraLink™

compatible frame grabber card, allow-

ing for a tested, ‘plug and play’ imaging

solution. Typical high performance

linescan applications include lumber

processing, document scanning, dimen-

sional gauging, biomedical imaging,

bar code scanning, and many more

industrial and scientific measurement

applications.

Spectral Sensitivity Curve (1x Gain)

Part Number Resolution Window Max. Line Rate (kHz)

SB5440CLG-011 512 Glass 68

SB5440CLG-011 512 F Silica 68

SB1440CLG-011 1024 Glass 36.4

SB1440CLG-011 1024 F Silica 36.4

SB2480CLG-011 2048 Glass 37.3

SB2480CLG-011 2048 F Silica 37.3

SB4480CLG-011 4096 Glass 19.1

SB4480CLG-011 4096 F Silica 19.1

Technical Specification

CCD Linear Array Cameras

www.optoelectronics.perkinelmer.com 47

48 www.optoelectronics.perkinelmer.com

Special Purpose CCD Sensors

Features

•363,000 picture elements (pixels)

in a 1100x330 configuration

• 24 µm square pixels

• 2-phase buried channel process

• On-chip amplifier for low noise

and high-speed readout

• Dynamic range greater than

25,000:1

• On-chip temperature sensor

• Two-stage TE cooler integrated

into the package

• Hermetically sealed

• 100% fill factor

• 10 MHz data rate

Typical Applications

• Spectroscopy

•Fluorescence microscopy

• Luminescence

•Protein quantification

Dynamic Range: Full well/read noise, MPP mode

Full Well Charge: RLoad = 5.1 kΩ, MPP mode

Dark Current MPP: MPP mode at -15˚C

Read Noise: Measured at 500 kHz at -15˚C

General Characteristics

Parameter Symbol Min. Typ. Max. Units

Format 1100x330

Pixel Size 24x24 µm

Imaging Area 26.4x7.92 mm

Dynamic Range DR 25,000:1

Full Well Charge QSAT 250 300 Ke-

Saturation Voltage VSAT 1000 1200 mV

Dark Current MPP DL 1 3 pA/cm2

Photo Response Non Uniformity PRNU 5 10 ±%

Dark Signal Uniformity DSNU 2 5 ±%

Charge Transfer Efficiency CTE >0.9999 >0.99995

Output Amplifier Gain 4 µV/e-

Operating Frequency fclock 10 MHz

Read Noise 10e-

cooled ccd sensors

tdi imagers

PT1109AAQ-711 Features

• 1024 pixel x 96 stage

•Unidirectional operation

• 20 MHz data rate

• High dynamic range (>5000:1)

• Line rates to 19 kHz

•Quantum efficiency of 42%

at 700 nm

• 13 µm x 13 µm pixel size

• >0.99995 horizontal, >0.9999

vertical CTE at maximum

saturation exposure

Typical Applications

•Semiconductor inspection

•Wafer inspection

•Sorting applications

Datasheets available upon request.

PT1109AAQ-711

Pixel Count* 1024 active elements

Extra Stages* 8

Pixel Size 13x13 µm

Number of Directions 1

Integration Stages** 96

Extra Stages** 1

Number of Outputs 1

Pixel Rate 20 MHz

Line Output Rate (max.) 18.1 kHz

Pixel Fill Factor 100%

Net Quantum Efficiency >42% at 700 nm

Power Dissipation —

Well Capacity 400,000 electrons per pixel

RMS Noise —

Dynamic Range >5000:1

CTE @ Qsat >0.99995 (horizontal)

>0.9999 (vertical)

Photo Response +/-10%

Non-Uniformity (PRNU)

Spectral Response 400–1000 nm

Dark Current —

Sensitivity 3.5 µV/electron

Operating Temperature 0 to 55˚C

Package Type 32 pin ceramic

Technical Specification

Operating Temperature: 0˚C min. to 50˚C max.

* In readout direction

** In TDI direction

Optoelectronics Headquarters:

PerkinElmer Optoelectronics, 44370 Christy Street, Fremont, CA 94538-3180, USA

P: (+1) 510-979-6500, (+1) 800-775-6786 (toll-free), F: (+1) 510-687-1140, opto@perkinelmer.com

North America Customer Support Hub, 22001 Dumberry Road, Vaudreuil-Dorion, Québec, Canada J7V 8P7

P: (+1) 450-424-3300, (+1) 866-574-6786 (toll-free), F: (+1) 450-424-3345, opto@perkinelmer.com

European Headquarters, Wenzel-Jaksch-Str. 31, 65199 Wiesbaden, Germany

P: (+49) 611-492-247, F: (+49) 611-492-170, opto.Europe@perkinelmer.com

Asia Headquarters, 47 Ayer Rajah Crescent #06–12, Singapore 139947

P: (+65) 6775-2022, (+65) 67704-366, F: (+65) 6775-1008, opto.Asia@perkinelmer.com

www.optoelectronics.perkinelmer.com

600113_02 CAT0407