fiAMOSPEC HIGH POWER NPN SILICON POWER TRANSISTORS High-Current, High-Speed, High-Power Type for Switching and Amplifier Applications. FEATURES: * DC Current Gain hFE = 20 ~ 100 @ I, = 15A ,V,,=2.0 V * LOW Vegisary = 0.75 V @ I,=15A, I,=1.2A *Maximum Safe-Area-of-Operation Curves... lem, limit line beginning 24 V MAXIMUM RATINGS NPN 2N5671 2N5672 30 AMPERE SILICON POWER TRANSISTORS 90-120 VOLTS 140 WATTS Characteristic Symbol 2N5671 2N5672 Unit Collector-Emitter Voltage Veeo 90 120 V Collector-Base Voltage Vero 120 150 Vv Emitter-Base Voltage | Vero 7.0 Vv Collector Current-Continuous lc 30 A Base Current lp 10 A Total Power Dissipation@T,=25C Py 140 WwW Derate above 25C 0.8 wrc Operating and Storage Junction Ty: Ts1 C Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rojec 1.25 C FIGURE -1 POWER DERATING 883 8 P,, POWER DISSIPATION(WATTS) oe 5 088 8 25 50 75 100 125 150 175 200 T , TEMPERATURE( C) PIN 1.BASE 2.EMITTER COLLECTOR(CASE) DIM | MILLIMETERS MIN | MAX A | 38.75 | 39.96 B | 19.28 | 22.23 Cc 796 | 9.28 D | 11.18 | 1219 E | 25.20 | 2667 F 0.92 | 1.09 G 138 | 1.62 H | 2990 | 30.40 16.64 | 17.30 J 3.88 | 436 K | 10.67 | 11.182N5671, 2N5672 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symboi Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vogoisus) Vv (I, = 200 mA, |, =0) 2N5671 90 2N5672 120 Collector Cutoff Current leeo mA ( Vog = 80 V, I= 0) 2N5671 10 (Veg = 80 V, I, = 0) 2N5672 10 Collector Cutoff Current loev mA (Veg=110 V, Veciom = 1-5 V ) 2N5671 12 (Veg=135 V, Vaciom = 1-5 V ) 2N5672 10 (Veg 100 V, Vege = 1-5 V, Te = 150C ) 2N5671 16 2N5672 10 Emitter Cutoff Current leBo mA (Veg =7.0V,1,=0) 10 ON CHARACTERISTICS (1) DC Current Gain hFE (1, = 15.0A, Voge = 2.0 V) 20 100 (le =20.0A, Veg =5.0V) 20 Collector - Emitter Saturation Voltage Vee(saty Vv (lh =15.0A, 1, =1.2A) 0.75 Base - Emitter Saturation Voltage Vee(sat) V (lg =15.0A, 1,=1.2A) 1.5 Base - Emitter On Voltage VeE(on) Vv (1, = 15.0 A, Veg = 5.0 V) 1.6 DYNAMIC CHARACTERISTICS Current - Gain - Bandwidth Product (2) f, MHz (l_ =2.0A, Voge = 10.0 V, f = 1.0 MHz) 40 SWITCHING CHARACTERISTICS On Time Veg = 30 V t on 0.5 us Ig = 15.0A Storage Time Ip, = lpg = 1-2A t. 1.5 us t, =0.1 ms Fall Time Duty Cycle =2.0% te 0.5 us (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f= [Pye | fio2N5671, 2N5672 NPN a ACTIVE-REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate l-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T ypq=200 C;T is 50us 3 2 of variable depending on conditions. second breakdown 05 3ms pulse limits are valid for duty cycles to 10% provided --Bonding Wire Limit : ani a Treemaly Limited 7.2576 (Sinde Puse) Tue 200C, At high case temperatures, thermal limita - 02 Second Breakdown Limit : 10 ms tion will reduce the power that can be handled to values 0.1 lc , COLLECTOR CURRENT (Amp) less than the limitations imposed by second breakdown. 4 2 3 5 7 30 0 70 120 200 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) DC CURRENT GAIN COLLECTOR SATURATION REGION a TA125C 3 AL une ] a z < 3 5 5 g fi x E QO a 5 a 3 03 05 1 2 5 7 10 20 30 0.01 0.02 005 401 02 05 10 20 50 10 lc , COLLECTOR CURRENT (AMP) ls, BASE CURRENT (AMP) TYPICAL SWITCHING TIME CAPACITANCES Vec30V lofig12.5 \ps#laz Ty=25-C a WwW e oO a < w E F 2 ~ < o o tatt, 1 2 3 5 7 10 2030 of 02 O85 1 2 5 10 20 80 100 Ic, COLLECTOR CURRENT (AMP) Ve,REVERSE VOLTAGE(VOLTS)