, ff MBR1030-MBR1060 VISHAY Vishay Lite-On Power Semiconductor 10A Schottky Barrier Rectifiers Features @ Schottky barrier chip @ Guard ring die constuction for transient protection Low power loss, high efficiency High current capability and low forward voltage drop @ High surge capability @ Foruse in low voltage, high frequency inverters, free wheeling, and polarity protection application @ Plastic material - UL Recognition flammability classification 94V-0 94 9537 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage MBR1030 | Vrru 30 Vv =Working peak reverse voltage MBR1035 | =VRwm 35 Vv =DC Blocking voltage MBR1040 =VpR 40 V MBR1045 45 Vv MBR1050 50 Vv MBR1060 60 Vv Peak forward surge current lesm 150 A Average forward current Tce=125C lEAy 10 A Junction and storage temperature range Tj=Tstg_| 65...4150 | C Electrical Characteristics Tj = 25C Forward voltage Ip=20A, Tc=25C MBR1030-MBR1045 Ve 0.84 | V Ip=10A, Tc=125C Ve 0.57) V Ir=20A, Tc=25C | MBR1050-MBR1060 Ve 0.95) V Ip=10A, Tc=125C Ve 0.70) V Reverse current Te=25C MBR1030-MBR1045 IR 0.1 mA Te=125C IR 15 mA Te=25C MBR1050-MBR1060 IR 0.1 mA To=1 25C IR 25 mA Diode capacitance VrR=4V, f=1MHz Cp 400 pF Thermal resistance TL=const. Rthuc 2.5 KW junction to case Voltage rate of change dvV/at 1000 | V/us ( Rated Vp ) Rev. A2, 24-Jun-98 1 (4)MBR1030-MBR1060 wa Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) 10 1000 Z \ _ = LL 8 & 5 PR s 5 = a fi] uc Oo 4 a > I T 2 e > a \ 0 100 0 50 100 150 0.1 1.0 10 100 15332 Tamb Ambient Temperature ( C ) 15335 Va Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 50 10 Tj = 125C = < < MBR1030MBR1 E ~ 10 ~ 10 =e ~ D o 0.1 o MBR1050 MBR1060 a Fy g 2! 2 | 0.01 Ww ee . - T= 25C = T= 25C |r Pulse Width = 300 ps 2% Duty Cycle 0.1 0.001 0.2 04 0.6 0.8 1.0 0 20 40 60 80 100 120 140 15333 Ve Forward Voltage ( V ) 15336 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Zz 300 250 5 o g, 200 a op 150 oO 5 SN i =100 x Peel o -~ 50 = s al fe - 0 1 10 100 15334 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98MBR1030-MBR1060 VEISHAY Vishay Lite-On Power Semiconductor Dimensions in mm L M B TO-220AC Dim Min Max , AT 14.22 15.88 : lan _ Bl 9.65 10.67 | | Cc] 254 3.43 . Lo a, 5.84 a KY) | Ee; - | 62 co c | i270 kB a) 1) 051 11h | K | 93.53 01.09 us L | 356 1.83 ug I M (1h 140 N | 0.30 0.64 P| 2.03 7.9) LU RT 4.83 533 ALL Dimensions in mm N J P R PIN | + QO, 4. acorag fo ON t+(_) p 14469 PIN 2 - Q>_Ssiase Case positive Case: molded plastic Polarity: see diagram Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)MBR1030MBR1060 Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98