VSMY1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.2, 30-Jun-16 1Document Number: 84214
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY1940X01 is an
infrared, 940 nm emitting diode based on GaAlAs surface
emitter chip technology with high radiant intensity, high
optical power and high speed, molded in clear, untinted
0805 plastic package for surface mounting (SMD).
FEATURES
Package type: surface mount
Package form: 0805
Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
AEC-Q101 qualified
Peak wavelength: λp = 940 nm
High reliability
High radiant power
High radiant intensity
High speed
Angle of half sensitivity: ϕ = ± 60°
Suitable for high pulse current operation
0805 standard surface-mountable package
Floor life: 168 h, MSL 3, according to J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
IrDA compatible data transmission
Miniature light barrier
Photointerrupters
Optical switch
Emitter source for proximity sensors
IR touch panels
•IR flash
IR illumination
•3D TV
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
21531
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMY1940X01 10 ± 60 940 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY1940X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805
VSMY1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.2, 30-Jun-16 2Document Number: 84214
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According to Fig. 10, J-STD-020 Tsd 260 °C
Thermal resistance junction / ambient JESD 51 RthJA 250 K/W
0
20
40
60
80
100
200
0 20406080100
Tamb - Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
120
140
160
180
0
20
40
60
100
120
0 20406080100
Tamb - Ambient Temperature (°C)
I
F
- Forward Current (mA)
R
thJA
= 250 K/W
80
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF- 1.45 1.8 V
IF = 1 A, tp = 100 μs VF-2.2- V
Temperature coefficient of VFIF = 100 mA TKVF --2-mV/K
Reverse current IRNot designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz,
E = 0 mW/cm2CJ- 125 - pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie51015mW/sr
IF = 1 A, tp = 100 μs Ie-75-mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe-50-mW
Temperature coefficient of radiant
power IF = 100 mA TKφe- -0.2 - %/K
Angle of half intensity ϕ 60- deg
Peak wavelength IF = 100 mA λp920 940 960 nm
Spectral bandwidth IF = 100 mA Δλ -40-nm
Temperature coefficient of λpIF = 30 mA TKλp-0.25-nm/K
Rise time IF = 100 mA, 20 % to 80 % tr-10-ns
Fall time IF = 100 mA, 20 % to 80 % tf-10-ns
VSMY1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.2, 30-Jun-16 3Document Number: 84214
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Forward Voltage vs. Ambient Temperature
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity vs. Wavelength
1
100
1000
1.0 1.2 1.4 1.6 1.8 2.4
VF - Forward Voltage (V)
I
F
- Forward Current (mA)
t
p
= 100 µs
10
2.0 2.2
1.30
1.35
1.40
1.45
1.60
1.65
-60 20 40 60 80 100
Tamb - Ambient Temperature (°C)
V
F
- Forward Voltage (V)
1.50
1.55
-40 -20 0
I
F
= 100 mA
92
102
104
106
110
112
V
F,rel
- Relative Forward Voltage (%)
108
-60 20 40 60 80 100
Tamb - Ambient Temperature (°C)
-40 -20 0
I
F
= 100 mA
100
98
96
94
0.01
0.1
10
100
1 10 100 1000
IF - Forward Current (mA)
I
e
- Radiant Intensity (mW/sr)
1
tp
= 100 µs
70
80
90
100
120
130
110
-60 20 40 60 80 100
Tamb - Ambient Temperature (°C)
-40 -20 0
I
F
= 100 mA
I
e
- Relative Radiant Intensity (%)
0.0
0.3
0.4
0.6
0.9
1.0
800 850 900 950 1000 1050
λ - Wavelength (nm)
0.8
I
F
= 100 mA
0.1
0.2
0.7
0.5
I
e
- Relative Radiant Intensity (%)
VSMY1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.2, 30-Jun-16 4Document Number: 84214
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
REFLOW SOLDER PROFILE
Fig. 10 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0.4 0.2 0
I
e, rel
- Relative Radiant Intensity
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
948013-1
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
VSMY1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.2, 30-Jun-16 5Document Number: 84214
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
Drawing-No.: 6.541-5083.01-4
specications
according to DIN
technical drawings
1.25
2
0.35
0.85
Not indicated tolerances ± 0.1
1 1
1.2
0.6
Recommended solder pad
Footprint
0.6 0.6
0.82
0.625
Issue: 1; 29.03.10
Cathode Anode
Top View
Side View
Bottom View
1
22111
VSMY1940X01
www.vishay.com Vishay Semiconductors
Rev. 1.2, 30-Jun-16 6Document Number: 84214
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BLISTER TAPE DIMENSIONS in millimeters
REEL DIMENSIONS in millimeters
Drawing-No.: 9.700-5352.01-4
specications
according to DIN
technical drawings
Reel off direction
2 ± 0.05
4
Ø 1.55 ± 0.05
0.2 ± 0.05
0.94 4
1.75
3.5 ± 0.05
8
2.24
Not indicated tolerances ±0.1
1.45
Ø 1.1 + 0.1
Anode
Cathode
Issue: 1; 13.04.10
22112
of the wheel is supplier specic.
Form of the leave open
Issue: 2; 26.04.10
Drawing-No.: 9.800-5096.01-4
specications
according to DIN
technical drawings
Ø 177.8 max.
Ø 55 min.
8.4 +2.5
8.4 +0.15
14.4 max.
Ø 13 + 0.5
- 0.2
1.5 min.
Ø 20.2 min.
Z
Z 2:1
20875
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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