SP8K3 Transistors 4V Drive Nch+Nch MOSFET SP8K3 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) SOP8 5.0 1.75 0.4 zApplication Power switching, DC / DC converter. (4) Each lead has same dimensions zInner circuit (8) Taping (7) (6) (5) Basic ordering unit (pieces) 2500 SP8K3 2 2 (1) (2) (3) (4) 1 (1) 1 (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2.> Source current (Body diode) (8) (7) (6) (5) TB Code Drain current 0.4Min. 0.2 Abbreviated symbol : SP8K3 zPackaging specifications Type (1) 1.27 1pin mark Package (5) 3.9 6.0 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). (8) Limits 30 20 7.0 28 1.6 6.4 2 150 -55 to +150 Unit V V A A A A W C C Limits 62.5 Unit C / W 1 Pw 10s, Duty cycle 1% 2 MOUNTED ON A CERAMIC BOARD. zThermal resistance Parameter Channel to ambient Symbol Rth (ch-a) MOUNTED ON A CERAMIC BOARD. Rev.B 1/3 SP8K3 Transistors zElectrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. - 30 - 1.0 - - - 5.0 - - - - - - - - - - Typ. Max. - - - - 17 23 25 - 600 200 120 8 10 37 11 8.4 1.9 3.3 10 - 1 2.5 24 33 35 - - - - - - - - 11.8 - - Unit A V A V Conditions S pF pF pF ns ns ns ns nC nC nC VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7.0A, VGS=10V ID=7.0A, VGS=4.5V ID=7.0A, VGS=4V ID=7.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.5A, VDD 15V VGS=10V RL=4.29 RG=10 VDD 15V VGS=5V ID=7.0A Unit V Conditions IS=6.4A, VGS=0V m Pulsed zBody diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Forward voltage Symbol VSD Min. - Typ. - Max. 1.2 Pulsed Rev.B 2/3 SP8K3 Transistors zElectrical characteristic curves 10000 1000 Ciss Coss Crss 0.1 1 10 td (off) 100 tr 10 td (on) 1 0.01 100 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) DRAIN CURRENT : ID (A) VDS=10V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 0 2 Ta=125C Ta=75C Ta=25C Ta= -25C 10 10 4 6 8 10 ID=7A ID=3.5A 150 100 50 0 0 2 4 6 8 10 12 14 16 VGS=0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0.1 0.01 0.0 0.5 10000 VGS=4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1 1.0 1.5 Fig.6 Source Current vs. Source-Drain Voltage 10 1 0.1 16 SOURCE-DRAIN VOLTAGE : VSD (V) 1000 100 14 Fig.3 Dynamic Input Characteristics 250 200 12 TOTAL GATE CHARGE : Qg (nC) 100 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 2 Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage VGS=10V Pulsed 1 3 GATE-SOURCE VOLTAGE : VGS (V) 1000 1 0.1 4 Ta=25C Pulsed Fig.4 Typical Transfer Characteristics 100 5 0 10 300 GATE-SOURCE VOLTAGE : VGS (V) 10000 6 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage 1 Ta=25C 9 VDD=15V ID=7A 8 RG=10 7 Pulsed DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 100 1 SOURCE CURRENT : Is (A) 10 0.01 tf STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 100 1000 10 Ta=25C VDD=15V VGS=10V RG=10 Pulsed GATE-SOURCE VOLTAGE : VGS (V) Ta=25C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 10 VGS=4V Pulsed 1000 100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current () Fig.8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static Drain-Source On-State Resistance vs. Drain Current () Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0