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DATA SH EET
Product data sheet 1999 Apr 21
DISCRETE SEMICONDUCTORS
BFS20W
NPN medium frequency transistor
db
ook, halfpage
M3D102
1999 Apr 21 2
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20W
FEATURES
•Low current (ma x. 25 mA)
•Low voltage (max. 20 V).
•Very low feedba ck capacitan ce (typ. 350 fF).
APPLICATIONS
•IF and VHF applications in thick and thin-film circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT323 (SC-70)
plastic pack ag e.
MARKING
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE(1)
BFS20W N1∗
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT323; SC-70) and
symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter −30 V
VCEO collector-emitter voltage open base −20 V
VEBO emitter-base voltage open collector −4 V
ICcollector current (DC) −25 mA
ICM peak collector current −25 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 21 3
NXP Semiconductors Pr oduct data sheet
NPN medium frequency transistor BFS20W
THERMAL CHARACTE RISTICS
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 20 V −−100 nA
IE = 0; VCB = 20 V; Tj = 100 °C−−10 µA
IEBO emitter cut-off current IC = 0; VEB = 4 V −−100 nA
hFE DC current gain IC = 7 mA; VCE = 10 V 40 85 −
VBE base-emitter vo ltage IC = 7 mA; VCE = 10 V −740 900 mV
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz −1−pF
Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz −350 −fF
fTtransition frequen c y IC = 5 mA; VCE = 10 V; f = 100 MHz 360 470 −MHz
1999 Apr 21 4
NXP Semiconductors Pr oduct data sheet
NPN medium frequency transistor BFS20W
Fig.2 DC current gain as a function of collector
current; typical values.
VCE = 10 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
han
dbook, halfpage
103
10
102
1
MGR830
10−111010
2
IC (mA)
hFE
(2)
(3)
(1)
Fig.3 Collector-emitter saturation voltage as a
function of collector curr ent; typical values.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MGR831
10
−1
110
IC (mA)
VCEsat
(mV)
(1)
10
3
10
2
10 10
2
(2)
(3)
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
VCE = 10 V.
(1) Tamb = −100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
1000
200
MGR832
400
600
800
VBE
(mV)
10
−1
11010
2
IC (mA)
(2)
(3)
(1)
Fig.5 Collector current as a function of
collector-emitter voltage; typical values.
Tamb = 25 °C.
(1) IB = 280 µA.
(2) IB = 230 µA.
(3) IB = 180 µA.
(4) IB = 130 µA.
(5) IB = 80 µA.
(6) IB = 30 µA.
h
andbook, halfpage
010
VCE (V)
IC
(mA)
(5)
(6)
(1)
25
0
5
MGR833
10
15
20
2468
(2)
(3)
(4)
1999 Apr 21 5
NXP Semiconductors Pr oduct data sheet
NPN medium frequency transistor BFS20W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
97-02-28
1999 Apr 21 6
NXP Semiconductors Product data sheet
NPN medium frequency transistor BFS20W
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Inter net at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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of such information and shall have no liability for the
consequenc es of use of such information.
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reserves the right to make changes to information
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not fo rm p ar t o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 115002/00/01/pp7 Date of releas e: 1999 Apr 21 Document orde r number: 9397 750 05696