ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VSM = 5200 V
IT(AV)M = 1980 A
IT(RMS) = 3100 A
ITSM = 42×10 A
VT0 =1.06V
rT= 0.219 mΩ
ΩΩ
Ω
Bi-Directional Control Thyristor
5STB 25U5200
Preliminary
Doc. No. 5SYA1038-02 Jul. 03
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•Tw o thyristors integrated into one wafer
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•Patented free-floating silicon technology
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•Designed for energy and industrial applications
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•Optimum pow er handling capability
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•Interdigitated amplifying gate.
The electrical and thermal data are valid for one thyristor half of the device.
Blocking
Maximum rated values 1)
Symbol Conditions 5STB 25U5200 5STB 25U5000 5STB 25U4600
VSM f = 5 Hz, tp = 10 ms 5200 V 5000 V 4600 V
VRM f = 50 Hz, tp = 10 ms 4400 V 4200 V 4000 V
dV/dtcrit Exp. to 0.67 x VRM, Tvj = 110°C 2000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Max. leakage current IRM VRM, Tvj = 110°C 400 mA
VRM is equal to the VSM value up to Tj = 95 °C
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM120 135 160 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 3.6 kg
Surface creepage distance DS53 mm
Air strike distance Da22 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5STB 25U5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1038-02 J ul. 03 page 2 of 6
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70°C 1980 A
RMS on-state current IT(RMS) 3100 A
Peak non-repetitive surge
current ITSM 42.0×103A
Limiting load integral I2t
tp = 10 ms, Tvj = 110 °C,
VD = VR = 0 V 8.82×106A2s
Peak non-repetitive surge
current ITSM 45.0×103A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 110 °C,
VD = VR = 0 V 8.40×106A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VTIT = 3000 A, Tvj = 110 °C1.7V
Threshold voltage VT0 1.06 V
Slope resistance rT
IT = 1300 A - 4000 A, Tvj= 110 °C0.219 mΩ
Holding current IHTvj = 25 °C 125 mA
Tvj = 110 °C70mA
Latching current ILTvj = 25 °C 900 mA
Tvj = 110 °C 700 mA
Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current di/dtcrit Cont.
f = 50 Hz 250 A/µs
Critical rate of rise of on-
state current di/dtcrit
Tvj = 110 °C,
ITRM = 3000 A,
VD ≤ 0.67 VRM,
IFG = A, tr = 0.5 µs Cont.
f = 1Hz 1000 A/µs
Circuit commutated turn-off
time tqTvj = 110°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs,
800 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Recovery charge Qrr Tvj = 110°C, ITRM = 2000 A,
VR = 200 V,
diT/dt = -1.5 A/µs
3600 4600 µAs
Delay time tdVD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs 3µs
5STB 25U5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1038-02 J ul. 03 page 3 of 6
Triggering
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage VFGM 12 V
Max. rated peak forward
gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Max. rated gate power loss PGFor DC gate current 3 W
Max. rated peak forward
gate power PGM see Fig. 9
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate trigger voltage VGT Tvj = 25 °C2.6V
Gate trigger current IGT Tvj = 25 °C 400 mA
Gate non-trigger voltage VGD VD = 0.4 x VRM, Tvjmax = 110 °C0.3 V
Gate non-trigger current IGD VD = 0.4 x VRM 10 mA
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
temperature range Tvj 110 °C
Storage temperature range Tstg -40 140 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) Double-side cooled 8.5 K/kW
Rth(j-c)A Anode-side cooled 17 K/kW
Rth(j-c)C Cathode-side cooled 17 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled 1.6 K/kW
Rth(c-h) Single-side cooled 3.2 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Zn
1i
t/-
ic)-th(j i
∑
=
τ
i1 234
Ri(K/kW) 5.748 1.731 0.688 0.333
τi(s) 0.9531 0.1240 0.0144 0.0031
Fig. 1 Transient thermal impedance junction-to case.
5STB 25U5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1038-02 J ul. 03 page 4 of 6
Max. on-state characteristic model:
VT25 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IT = 500 – 80000 A
Max. on-state characteristic model:
VT110 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IT = 500 – 80000 A
A25 B25 C25 D25 A110 B110 C110 D110
200.70×10-6 116.90×10-6 176.4×10-3 -2.52×10-3 157.10×10-6 145.60×10-6 155.60×10-3 -27.48×10-6
Fig. 2 Max. on-state voltage characteristics Fig. 3 Max. on-state voltage characteristics
Fig. 4 On-state power dissipation vs. mean on-state
current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean
on-state current.
5STB 25U5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1038-02 J ul. 03 page 5 of 6
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave. Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
IGM
IGon
100 %
90 %
10 %
IGM ≈ 2..5 A
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr≤ 1 µs
tp(IGM)≈ 5...20 µs
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current. Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
5STB 25U5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1038-02 Jul. 03
Semiconductors
Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Fig. 12 Device Outline Drawing.
