5STB 25U5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1038-02 J ul. 03 page 2 of 6
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70°C 1980 A
RMS on-state current IT(RMS) 3100 A
Peak non-repetitive surge
current ITSM 42.0×103A
Limiting load integral I2t
tp = 10 ms, Tvj = 110 °C,
VD = VR = 0 V 8.82×106A2s
Peak non-repetitive surge
current ITSM 45.0×103A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 110 °C,
VD = VR = 0 V 8.40×106A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VTIT = 3000 A, Tvj = 110 °C1.7V
Threshold voltage VT0 1.06 V
Slope resistance rT
IT = 1300 A - 4000 A, Tvj= 110 °C0.219 mΩ
Holding current IHTvj = 25 °C 125 mA
Tvj = 110 °C70mA
Latching current ILTvj = 25 °C 900 mA
Tvj = 110 °C 700 mA
Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current di/dtcrit Cont.
f = 50 Hz 250 A/µs
Critical rate of rise of on-
state current di/dtcrit
Tvj = 110 °C,
ITRM = 3000 A,
VD ≤ 0.67 VRM,
IFG = A, tr = 0.5 µs Cont.
f = 1Hz 1000 A/µs
Circuit commutated turn-off
time tqTvj = 110°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs,
800 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Recovery charge Qrr Tvj = 110°C, ITRM = 2000 A,
VR = 200 V,
diT/dt = -1.5 A/µs
3600 4600 µAs
Delay time tdVD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs 3µs