High Power SILICON NP C781 POWER 77 mm THYRISTORS ano CTRS C784 / C787 Lyay) =1650 - 2500A/ Vip >Vany =1800V - 4400V ayY AMPLIFYING GATE The C781, C782, & C784 group of reverse blocking thyristors feature a nominal 77mm silicon junction design having an exclusive linear amplifying gate. These are manufactured by the proven multi- diffusion process to optimize high blocking voltage capability with low on state voltage and recovery characteristics. These are commonly used for phase controlled applications such as DC motor control power supplies, cycloconverters and load commu- tated inverters. THYRISTOR (SCR) PRESSPAK See package styles on page 8 height 1.0inch C785, C787 1,4 inch C781, C782, C784 MAXIMUM ALLOWABLE RATINGS REPETITIVE PEAK OFF-STATE REPETITIVE PEAK OFF-STATE TYPE AND REVERSE VOLTAGE AND REVERSE VOLTAGE tsi? VorRM/VARM' Vpam/VrRam' Vim? @ 2 KA lav* Ty = 40C to +125C Ty =0C to +125C Ty = 128C 8.3ms/ TOs Is = 70C C784DD 4400 Volts 4500 Volts 1.35 V 26KA/24KA 1650A C734DC 4300 4400 C784DB 4200 4300 C784DA 4100 4200 C784DP 4000 4100 C784CT 3900 4000 C784CN 3800 3900 C784CS 3700 3800 C784CM 3600 3700 C7RILS 2700 2800 L35V 35KA/32KA 2300A C782LM 2600 2700 C782LE 2500 2600 C782LD 2400 2500 CT8ILA 2100 Volt 2200 Voit 1.20V 45KA/41.SKA 2500A CTSIL 2000 2100 C78iPT 1900 2000 C78IPN 1300 1900 Externally applied mounting force............-cccccceeseeeeneeeeeeeeeeneneeneneeeeeseeeeeepeanens 7000-9000 Ib. 31.1-40.0 KN DC Thermal Resistance Junction to case, Rehjec -cseceeeeccntence cence sccseeeceeeceerssnseneeeaeeen sees enesevesarees 012 C/ W Storage Temperature ........... cece cece cee c cree cence eee en ea sen ee snes a nanaaetaeeseeeebeeeaseseesnenasteaatgananaa ~40 to +150C NOTES: {. Sinusoidal waveform 50/60Hz Device under test must be assembled with recommended mounting force to 3 heat dissipator at less than 0.3 C/'W. 2. Instantaneous peak values, half sine (8.3 ms - 10 ms) or trapezoidal (30 A/us, S 25 msec) 3. Non-repetitive surge current rating - crest of half sinewave. 4. Full cycle average current - cotitinuous half sinewave @ 50/ 60Hz (see mounting instruction). 175 Great Valley Pkwy., Malvern, PA 19355 C781 Rev. A 9/7/01 1 of 8C78T CHARACTERISTICS ON-STFATE PEAK CURRENT [7 [KA} GHARACTERISTIC SYMBOL |UNITS | MIN. | TYPE MAX. TEST CONDITIONS Peak Off-state Current IpRM ma 10 Tj= 28 Gate Opened DRM ma 150 = 125C Gate Opened Peak Reverse Current IRRM ma 10 T= 28C Gate Opened TRRM ma 156 = 125C Gate Opened Critical exponential rate of rise dvidt Vins 500 Tj = 125C Vp = 0.8VpRM of off-state voltage (higher rates open gate may cause destructive switching}. Deijay Time td as 15 2.5 3.0 Tj = 125C. -Vp = 1500V Gate Trigger Current IsT ma 250 Ty = 25C, Vp = 12 BC Gate Trigger Voltage Vot 42 Non-Trigger Current IGDM ma 15 Tj = 125C. Vip = 1000 Non-Trigger Voltage VGDM Vv 0.5 AC Crest Operational Gate IGA A. L! Gate source: Current, Voltage requirement VGA v 13 + open circuit - 30V + short circuit - 2A + rise tinge * 0.5 ys - duration tp > td Conventional Circuit ty MS 250 400 Tj 125C, IT = 2000 A Commutating Turn-olf time tp, > Ims with teverse voltage) dir -dt = 5A/ us Vr= 100V dy dt = 1000V: us V reapplied = 1000V Holding Current IH ma 40 60 150 Tp= C, disde =~ Sma. ys 24 36 90 105C, Erms = 7.5Vrms 20 30 75 125C, R= 10 ohms Freq = 60Hz Latching Current Ie ma 250 400 i000 Tj = 25C. . Gate Drive 155 250 620 105C, 30V 10 ohms 130 210 530 125C, duration I5yus 100 10 E6 INITIAL T, = 125C 50 5.66 g = 2u 3.66 20 266 10 1.6 a t z 3 4 $ 6 7 15 2 3 s 19 ON-STATE PEAK VOLTAGE, VtM (! TIME BASE WIDTH OF HALF SINEWAVE rma) MAXIMUM FORWARD CONDUCTION NON-REPETITIVE Iponq and |?t CAPABILITY CHARACTERISTIC ON-STATE FOR FUSE COORDINATION 175 Great Valley Pkwy., Malvern, PA 19355 C781 Rev. A 9/7/01 2 of 8 Vi (AS}CONDUCTION ANGLE. y CONDUCTION ANGLE, TeQ) 5000 S0 HZ ---11 COND. t | ANGLE } FULL CYCLE 180 a 2 150 8 8 120 g 8 3 FULL CYCLE POWER, Pay (WATTS) FULL CYCLE AVERAGE POWER, Pay (WATTS) 500 1000 1500 2000 2500 0 2000 3000 4p00 5000 6000 7000 B00 PEAK CURRENT, IT (AMPERES) PEAK CURRENT, |T (AMPERES) MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR SINEWAVE CURRENT AT VARIOUS CONDUCTING ANGLES. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. (DIGITAL OATA iS AVAILABLE) OVERLAP ANGLE, OVERLAP ANGLE. a Tau 6 a a 2 or or : a0" 5 It ao 4 ii t=, ju ue * nee ~T20" out CONDUCTION ANGLE = 1207 + BO Hz 8 et V20" + CONDUCTION ANGLE FULL CYCLE POWER, Pay (WATTS) FULL CYCLE AVERAGE POWER, Pay (KW) w 500 1000 1500 2000 2500 1 2 3 4 5 6 ? 8 PEAK CURRENT. IT (AMPERES) PEAK CURRENT, IT (KILOAMPERES) MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR THREE PHASE RECTIFIER (120 CONDUCTION) AT SEVERAL OVERLAP ANGLES, y. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. (DIGITAL DATA IS AVAILABLE) 2000 8 E 8 SWITCHING VOLTAGE. VD (voLTs) PEAK RECOVERY CURRENT, tang (AMPERES) MAXIMLIM 125C XX 0 It> zoom ton > Zm sec NX oA a tw NY . MAXIMUM 25C NX 1 _ 00 CONTINUOUS OPERATION a 1. 10. 2. 100 200 300 CIRCUIT COMMUTATING dip/at (ApS) CIRCUIT COMMUTATING dipyat, (A/u8) MAXIMUM ALLOWABLE REPETITIVE DI/DT AS PEAK RECOVERY CURRENT VERSUS FUNCTION OF ANODE VOLTAGE BIAS. COMMUTATING CIRCUIT DI/DT LIMITATION ON ADDITIONAL SNUBBER DISCHARGE IS INDICATED. 175 Great Valley Pkwy., Malvern, PA 19355 C781 Rev. A 9/7/01 3 of 8C782 {C785 CHARACTERISTICS CHARACTERISTIC symeot | units | min. | type | max. TEST CONDITIONS Peak Off-state Current IDRM ma 1G Tj= 25C Gate Opened IpaM ma 150 = 125C Gate Opened Peak Reverse Current IRRM ma 10 Tj= 25C Gate Opened IRRM ma 150 = 125C Gate Opened Critical exponential rate of rise dv dt Vi us 500 Tj = 125C, Vp = O0.8VpRM of off-state voltage (higher rates open gate may cause destructive switching). Delay Time td HS 1.5 2.5 3.0 Tj = 125C, Vp = 1800V Gate Trigger Current IGT ma 250 Tj? 29C, Vp = Izv DC Gate Trigger Voltage VGT v 42 Non-Trigger Current IGDM ma 15 Tj # 125C, Vp = 1300V Non-frigger Voltage VGDM Vv 0.5 AC Crest Operational Gate IGA A Gate source: Current: Voltage requirement VGA v ~ open circuit - 30V , - short circuit - 2A - rise time = 0.545 - duration tp > td Conventional Circuit tq us 250 400 Tj = 125C, IT = 200A Commutating Turn-off time tp > 2ms (with reverse voltage) dir/dt = SA/us Vr = 100 dvjdt = 1000V< us reapplied = 1500V Holding Current 1H ma 40 0 200 Ty= 25C, di/dt =-S5ma/us 24 42 120 105C, Erms = 7.5Vrms 20 35 100 LHC, R= ld ohms Freq > 60Hz Latching Current I ma 300 600 1000 Tj= 25C, Gate Drive 210 420 700 105C, = 30V/10 ohms 190 375 630 124C, duration [Sys ON-STATE PEAK CURRENT If (KAJ T 2 3 INITIAL T; = 4 ON-STATE PEAK VOLTAGE. VTM () MAXIMUM FORWARD CONDUCTION CHARACTERISTIC ON-STATE 175 Great Valley Pkwy., Malvern, PA 19355 ITSM {KA} 4of8 1.5 z 5.66 3.6 26 1.E6 a s 10 TIME BASE WIDTH OF HALF SINEWAVE (ms} NON-REPETITIVE I7gqy and It CAPABILITY FOR FUSE COORDINATION C781 Rev. A 9/7/01 Vt (ASPC784 / C787 CHARACTERISTICS CHARACTERISTIC SYMBOL | UNITS | MIN. | TYPE MAX, TEST CONDITIONS Peak Off-state Current IDRM ma 20 Tj= 25C Gate Opened IpRM ma 300 = [25C Gate Opened Peak Reverse Current. IRRM ma 20 Tj= 25C Gate Opened IRRM ma 200 =125C Gate Opened Critical exponential rate of rise dvjdt Vips 1000 Tj = 125C, Vp = O.7VpRM of off-state voltage (higher rates open gate may cause destructive switching). Delay Time td us 1.5 25 3.0 Tj = 125C, Vp = 2000 Gate Trigger Current* IGT ma 300 T= 25C, Vip = I2v DC Gate Trigger Voltage* VGT v 45 Non-Trigger Current IGDM ma 15 Tj HISC, Vp = 2000V Non-Trigger Voltage ' GDM Vv 0.8 AC Crest Operational Gate IGA A 1.5 Gate source: Current. Voltage requirement VGA v 23 - open circuit - 40V short circuit - 4A + rise time * 0.5ys ~ duration tp > td Conventional Circuit ty us 400 Tz = 100C, I7 = 2000A Commutating Turn-off time tp > 2ms (with reverse voltage) diridt = 5Ajps Vr= 100V dv; dt = 1006V/us reapplied = 2000V Holding Current inf ma 45 80 250 T= 25C, di/dt = -5ma/ps 27 43 150 105C, E =7.5rms 2 40 125 125C, R= 10 ohms Freq = Hz Latching Current I ma 300 450 1000 Tj= 25C Gate Drive 225 340 750 105C 30V/10 ohms 205 310 690 125C duration 1Sps DC trigger current and voltage are indicated as a characteristic, Turn-on in this manner will not support rated di. dt. n-state Current, it 30000 10000 ms pulse Initial Tj=725 C 10600 100 o 1 2 3 4 Ss 6 7 S S 14 On-State Voltage, Vt (volts) 16/91 rev 8/1594 MAXIMUM FORWARD CONDUCTION CHARACTERISTIC ON-STATE 175 Great Valley Pkwy., Malvern, PA 19355 40 4066 i] S0ES 2 2066 10 1.068 6 SES 10 1 2 3 4 5 TIME BASE WICTH OF HALF SINEWAVE (ms} NON-REPETITIVE Ipgyy and Ft CAPABILITY FOR FUSE COORDINATION C781 Rev. A 9/7/01 5 of 8 IN (ASEC}CONDUCTION ANGLE, y CONDUCTION ANGLE, y 5000 180 8 130 150 8 150 T20 8 120 8 gar 80" g FULL CYCLE AVERAGE POWER, Pay (WATTS) FULL CYCLE AVERAGE POWER, Pay (WATTS) 300 1000 1500 20co 200 32m 2000 3000 4000 5000 6000 7000 8000 PEAK CURRENT, !7 (AMPERES) PEAK CURRENT, IT (AMPERES) SINEWAVE 60 HZ MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR SINEWAVE CURRENT AT VARIOUS CONDUCTING ANGLES. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. (DIGITAL DATA IS AVAILABLE) OVERLAP ANGLE, uy OVERLAP ANGLE g 2. 20 40 2 ' 1 ' i i t t He Py P= 120". 120" + wv CONOUCTION ANGLE = 120 +y 60 Hz fear CONDUCTION ANGLE = 120" + 60 Hz FULL CYCLE AVERAGE POWER, Pay (KW) FULL CYCLE AVERAGE POWER, Pay {WATTS] 500 1000 1800 2000 2500 1 2 3 4 5 6 7 8 PEAK CURRENT. IT {AMPERES} PEAK CURRENT, IT (KILOAMPERES) MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR THREE PHASE RECTIFIER (420 CONDUCTION) AT SEVERAL OVERLAP ANGLES, y'. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. {DIGITAL DATA i$ AVAILABLE) 2500 8 8 = CIRCUIT diva MAXIMUM 125C MINIMUM 125C XN Z000A ston > 2m sec SWITCHING VOLTAGE. Vp, (VOLTS) PEAK RECOVERY CURRENT, !fing (AMPEAES) ute} aig Py a t <- NN MAXIMUM 25C Ns iAM SS , 1 1. 1 20 150 206 CIRCUIT COMMUTATING Gip/dt (A/nS) CIRCUIT COMMUTATING dip/dt, (A/pS} PEAK RECOVERY CURRENT VERSUS MAXIMUM ALLOWABLE REPETITIVE DI/DT AS LIMITATION ON ADDITIONAL SNUBBER DISCHARGE IS INDICATED. 175 Great Valley Pkwy., Malvern, PA 19355 C781 Rev. A 9/7/01 6 of 8FULL CYCLE AVERAGE POWER, Pay (WATTS) FULL CYCLE AVERAGE POWER, Pay (WATTS) CONDUCTION ANGLE, y CONDUCTION ANGLE. y PEAK RECOVERY CURRENT. lay [AMPERES} 1500 160 6 60/50 Hz == _ 180 150 a E 150" SOE oo, ror 1000 CYCLE = 120 so 2 90 wy a i 60 8 2 500 1000 1500 _ 2000 2500 2 a 4 5 6 PEAK CURRENT. iT (AMPERES) PEAK CURRENT, If (KILOAMPERES) MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR SINEWAVE CURRENT AT VARIOUS CONDUCTING ANGLES. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. (DIGITAL DATA IS AVAILABLE) OVERLAP ANGLE. a OVERLAP ANGLE, 1500) z 8 2 20 _ wg? - zo = =F 26 = a i a we wo Ee 7 Eel CONDUCTION ANGLE 5 5 CONDUCTION ANGLE. 60 Hz w 60 Hz . a 4 & Z3 500 a S Oo 2 3 gy o 500 1000 18009 2000 2 a 4 5 6 PEAK CURRENT IT (AMPERES) PEAK CURRENT It (KILOAMPERES) MAXIMUM FULL CYCLE AVERAGE POWER DISSIPATION FOR THREE PHASE RECTIFIER (120 CONDUCTION) AT SEVERAL OVERLAP ANGLES, i. EFFECT OF VARIABLE CONDUCTING AREA IS INCLUDED. (DIGITAL DATA IS AVAILABLE) 4000 a 00 2 | ecu MAXIMUM a [ oven Xy Ww q 8 wot rN IT > 2000A. ton > 2m set g = = os M e MAXIMUM 25C z 2Vo>V (ous) ERR 1000 L J a t. 10. 20. 7 100 20 CIRCUIT COMMUTATING dipiet (A/uS) CIRCUIT COMMUTATING dip/at. [AjuS) MAXIMUM ALLOWABLE REPETITIVE DI/DT AS FUNCTION OF ANODE VOLTAGE BIAS. LIMITATION ON ADDITIONAL SNUBBER DISCHARGE IS INDICATED. 175 Great Valley Pkwy., Malvern, PA 19355 C781 Rev. A 9/7/01 7 of 8 PEAK RECOVERY CURRENT VERSUS COMMUTATING CIRCUIT DI/DTINSTANTANEOUS VOLTAGE iV} Zac-oc CW GATE CHARACTERISTICS AND GATE SUPPLY REQUIREMENTS 0 Thyristor Gate Impedance This is enhanced by fast rising gate voltage, increasing anode bias and 5 temperature. It is at a minimum for de voltage, zero bias and tow temperature (not 3 Cl CoN The maximum impedances expected for C784 and C781/C782 are oS wn indicated as curves of gate current versus gate voltage. -. w N Laeamemet Gate Supply 3 2 N = Load lines for 40V/100 and 30V/1SM are shown. The short circuit 5 ; current rise time should be approximately 0.58 and the duration longer 3 at 7 than the delay time expected for the thyristor. By a crave Minimum Acceptable Gate Current | io ~ 7 The intersection of load line and gate characteristic (encircled) indicates 4 K the minimum value of actual current flowing into the gate that is required 5 during the delay time interval needed for the published dij dt and snubber discharge ratings. 9 1 2 2 4 Additions! Gate Ratings (maximums) INSTANTANEOUS CURRENT {A}. Peak gate power, PGM (LO0uS) 6-20. seesee reece ern e ees eaOW GATE SUPPLY igs OR THYRISTOR GATE IGk Average gate power, PO(AY)-- ++ eee ee tc ener een enn eer nees 35W ~ Peak gate current .....0cs scenes fade ee eneeneeenecesacarer 2A Peak reverse voltage VGRM -s.- essere saneceaneeeereene COW THERMAL AND MECHANICAL INFORMATION atz NOTES: l. Add .002C/W to account for both case to dissipator interfaces when properly mounted: e.g.. Ross = .014C/ W. See Mounting Instructions. 2. DC Thermal Impedance is based on average full cycle junction temperature. Instantaneous junction temperature may be calculated using the following modifications: # end of conducting portion of cycle 120 sq. wave add .0012C/W along entire curve 180 sq. wave add .0O10C; W along entire curve 180 sine save add 000C; W along entire curve e end of fuil cycle any wave, subtract .0005C/ W along sitive curve. 3. Ask for general mounting instructions. 00% or 1 1. 19 POWER ON TIME (SEC} OUTLINE DRAWING TIME ~ SECONDS : TERM inches Millimeters o Symbol s Min. Man. Min. Max. 20*# GA - 4.350 _ 10.49 TEAM OB 2.876 2.880 73.05 FS Cc 11307 | 1407 | 35.23 | 3675 | *** for C785 & C787 only *** wet - , . SURFACES =~ oA--- TERR (G) D -080 - 2.03 ~ C" = 1.000 - 1.070 in. Fe. a oo+ | DiBeprti OE 0.136 0.146 3.45 371 25,40 - 27.18 mm ts Lt. af pe) . . - - surface creepage = 1.00 in. . Team G@) F 020 - 0.36 _ bt = Se G |2403 | 2418 | 61.16 | 61.42 TERMED Po O84 (Dept of SE) Hl " " = _ SURFACE 4 Ancde-Cathode Pole Faces @) Nickel Plated Copper. 5. Mounsing Force, 7000 - 9000 Ib / 31.1 - 40.GkN 6. Electrical Insulation, Glazed Ceramic, Creepage 1.6 in. (40.6mm). Strike .0 in. (25.4mm) 7, Gate Leads @ @ I8 in. #22 Terminated Nickel Plated. with #8 Ring Terminal. 175 Great Valley Pkwy., Malvern, PA 19355 C781 Rev. 4 9/7/01 8 of 8