DS30061 Rev. 8 - 2 1 of 3 MMBT5551
www.diodes.com ã Diodes Incorporated
MMBT5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary PNP Type Available (MMBT5401)
·Ideal for Medium Power Amplification and Switching
·Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic Symbol MMBT5551 Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC200 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Maximum Ratings @ TA= 25°C unless otherwise specified
A
C
B
E
JL
TOP VIEW
M
BC
H
G
D
K
E
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Marking (See Page 2): K4N
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
E
B
C
Features
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
SPICE MODEL: MMBT5551
DS30061 Rev. 8 - 2 2 of 3 MMBT5551
www.diodes.com
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K4N
YM
Marking Information
Device Packaging Shipping
MMBT5551-7 SOT-23 3000/Tape & Reel
Ordering Information (Note 4)
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT5551-7-F.
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO 180 ¾VIC= 100mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 160 ¾VIC= 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE = 10mA, IC = 0
Collector Cutoff Current ICBO ¾50 nA
mA
VCB = 120V, IE= 0
VCB = 120V, IE= 0, TA = 100°C
Emitter Cutoff Current IEBO ¾50 nA VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
80
80
30
¾
250
¾
¾
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.15
0.20 VIC= 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(SAT) ¾1.0 V IC= 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾6.0 pF VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain hfe 50 250 ¾VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product fT100 300 MHz VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure nF ¾8.0 dB VCE = 5.0V, IC = 200mA,
RS = 1.0kW, f = 1.0kHz
Electrical Characteristics @ TA = 25°C unless otherwise specified
DS30061 Rev. 8 - 2 3 of 3 MMBT5551
www.diodes.com
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature
150
200
250
300
350
0
0.04
0.05
0.06
0.07
0.08
0.09
0.15
0.14
0.13
0.12
0.11
0.10
110 100 100
0
V,C
O
LLECT
O
RT
O
EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
IC
IB
=10
T = 150°C
A
T = 25°C
A
T = -50°C
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
.
0
0.1 110 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Base Emitter Voltage
vs. Collector Current
V=5V
CE
T = 150°C
A
T=25°C
A
T = -50°C
A
1
10
1000
100
110 100
h , DC CURRENT
FE
GAIN (NORMALIZED)
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs
Collector Current
V= 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1000
100
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Gain Bandwidth Product vs.
Collector Current
V= 5V
CE
