S12M8-600B
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
FEATURES
Blocking Voltage to 600 Volts
High Surge Current Capability - 100 Amperes
On-State Current Rating of 12 Amperes RMS at 80
℃
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT an IH Specified
for Ease of Design
High Immunity to dv/dt - 100 V/msec Minimum at 125
℃
Pb-Free Package
MECHANICAL DATA
Case: Molded plastic
Weight: 0.07 ounces, 2.0 grams
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
SCRs
12 AMPERES RMS
600 VOLTS
SEMICONDUCTOR
LITE-ON
Rating Symbol Value Unit
Peak Repetitive Off– State Voltage (
T
J
= -40 to 125
℃
, Sine Wave, 50 to 60 Hz; Gate Open) V
DRM
,
V
RRM
600 Volts
On-State RMS Current (180° Conduction Angles,Tc=80
)
℃
I
T(RMS)
12 Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,Tj = 25
℃
)
(1/2 Cycle, Sine Wave 50 Hz,Tj = 25
℃
)I
TSM
100
95 Amp
Circuit Fusing Consideration (t = 8.3 ms)
(t = 10 ms) I t 41
45 A s
Forward Peak Gate Power (Pulse Width
1.0us,T
J
=
80
℃
)P
GM
5.0 Watt
Forward Average Gate Power (t=8.3ms,
Tc
=
80
℃
)P
G(AV)
0.5 Watt
Forward Peak Gate Current (Pulse Width 1.0us,Tc=80
℃
) I
GM
2.0 Amp
Operating Junction Temperature Range
T
J
-40 to +125
℃
Storage Temperature Range Tstg -40 to +150
℃
2
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
REV. 4, Oct-2010, KTXC18
≦
≦
2
1 Cathode
2 Anode
3 Gate
4 Anode
PIN ASSIGNMENT
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67
9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.67 0.40
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
O 1.37 1.17
HH
A
B
C
K
J
I
G
F
E
D
N
M
L
PIN
13
2
O
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient
RthJC
RthJA
2.2
62.5
/
℃
W
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds
T
L
260
℃
Characteristics Symbol Min Typ Max Unit
Peak Reptitive Forward or Reverse Blocking Current T
J
=25
℃
(V
D
=Rated V
DRM
and V
RRM
; Gate Open T
J
=125
℃
I
DRM
I
RRM
----
----
----
----
10
2.0
uA
mA
Gate Trigger Current (V
D
= 12 V; RL =100 Ohms) I
GT
2.0 4.0 8.0 mA
Holding Current (V
D
= 12 V, Gate Open, Initiating Current = 200 mA) I
H
4.0 10 20 mA
Latch Current (V
D
=12V,IG = 20mA ) I
L
6.0 12 30 mA
Gate Trigger Voltage (V
D
= 12 V; R
L
= 100 Ohms)
V
GT
0.5 0.65 0.8 Volts
Peak Forward On-State Voltage
(I
TM
= 24 A Peak @Tp 2.0 ms, Duty Cycle 2%)
≦ ≦
V
TM
---- ---- 2.2 Volts
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
,Exponential Waveform, Gate Open,T
J
=125
℃
)dv/dt 100 250 ---- V/us
Repetitive Critical Rate of Rise of On-state Current
IPK=50A,Pw=40 usec,diG/dt=1A/usec,Igt=50mA dI/dt ---- ---- 50 A/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
J
=25 unless otherwise noted)
℃
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
RATING AND CHARACTERISTIC CURVES
S12M8-600B
RATING AND CHARACTERISTIC CURVES
S12M8-600B
IT ,INSTANTANEOUS ON-STATE CURRENT (AMP)
VT ,INSTANTANEOUS ON-STATE VOLTAGE(VOLT)
Figure 1. On-State Characteristics
TJ=125
℃
TJ=25
℃
0.1
1
10
100
0 1 2 3 4
RATING AND CHARACTERISTIC CURVES
S12M8-600B
-40 -20 0 20 40 60 80 100 120
Figure 2. Typical IGT versus TJ
TJ, JUNCTION TEMPERATURE( )℃
0
0.5
1
1.5
2
2.5
IGT(Tj) / IGT(25 )℃
-40 -20 0 20 40 60 80 100 120
Figure 3. Typical VGT versus TJ
TJ, JUNCTION TEMPERATURE( )℃
0.4
0.6
0.8
1
1.2
1.4
1.6
VGT(Tj) / VGT(25 )℃
-40 -20 0 20 40 60 80 100 120
Figure 4. Typical IH versus TJ
TJ, JUNCTION TEMPERATURE( )℃
0.3
0.6
0.9
1.2
1.5
1.8
IH (Tj) / IH (25 )℃
IT(RMS) ,RMS ON STATE CURRENT (AMP)
Figure 6.On-state Current Derating Curve
TJ, CASE TEMPERATURE( )
℃
P(AV) ,AVERAGE POWER DISSIPATION (WATTS)
Figure 7. Power Dissipation versus IT
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
TJ=125
℃
TJ=25
℃
-40 -20 0 20 40 60 80 100 120
Figure 5. Typical IL versus TJ
TJ, JUNCTION TEMPERATURE( )℃
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
IL (Tj) / IL (25 )℃
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10 12
TJ=25
℃
TJ=125
℃
0
2
4
6
8
10
12
14
0 20 40 60 80 100 120 140
Legal Disclaimer Notice
S12M8-600B
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm
the latest product information and specifications before final design, purchase or
use.
LSC makes no warranty, representation or guarantee regarding the suitability of
its products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any
unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.
Important Notice and Disclaimer
