1
Motorola IGBT Device Data
N–Channel Enhancement Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage blocking capability. Short circuit rated IGBTs are
specifically suited for applications requiring a guaranteed short
circuit withstand time. Fast switching characteristics result in
efficient operations at high frequencies. Co–packaged IGBTs
save space, reduce assembly time and cost.
•High Power Surface Mount D3PAK Package
•High Speed Eoff: 160
m
J/A typical at 125°C
•High Short Circuit Capability – 10
m
s minimum
•Soft Recovery Free Wheeling Diode is included in the package
•Robust High Voltage Termination
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter V oltage VCES 1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 1200 Vdc
Gate–Emitter Voltage — Continuous VGE ±20 Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
IC25
IC90
ICM
20
12
40
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD123
0.98 Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg –55 to 150 °C
Short Circuit Withstand T ime
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)tsc 10
m
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
1.02
1.41
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL260 °C
(1) Pulse width is limited by maximum junction temperature.
This document contains information on a new product. Specifications and information are subject to change without notice.
Order this document
by MGV12N120D/D
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN D3PAK
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 433–01, Style 1
TO–268AA
G
C
E
C
E
G
Motorola, Inc. 1995
MGV12N120D
2Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown V oltage
(VGE = 0 Vdc, IC = 250 µAdc)
Temperature Coefficient (Positive)
BVCES 1200
——
870 —
—
Vdc
mV/°C
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES —
——
—100
2500
µAdc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State V oltage
(VGE = 15 Vdc, IC = 5 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc)
VCE(on) —
—
—
2.51
2.36
3.21
3.37
—
4.42
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1 mAdc)
Threshold Temperature Coef ficient (Negative)
VGE(th) 4.0
—6.0
10 8.0
—
Vdc
mV/°C
Forward T ransconductance (VCE = 10 Vdc, IC = 10 Adc) gfe —12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vdc V 0 Vdc
Cies —930 — pF
Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz
)
Coes —126 —
T ransfer Capacitance
f
=
1
.
0
MHz)
Cres —16 —
SWITCHING CHARACTERISTICS (1)
T urn–On Delay Time
(VCC = 720 Vdc IC=10Adc
td(on) —80 — ns
Rise T ime
(V
CC =
720
Vd
c,
I
C =
10
Ad
c,
VGE = 15 Vdc, L = 300
m
Htr—114 —
T urn–Off Delay Time
GE ,
m
RG = 20 Ω, TJ = 25°C)
Energy losses include
“
tail
”td(off) —66 —
Fall T ime
Energy
losses
include
“tail”
tf— 232 —
T urn–Off Switching Loss Eoff —0.57 1.33 mJ
T urn–On Switching Loss Eon —1.12 1.88
Total Switching Loss Ets —1.69 3.21
T urn–On Delay Time
(VCC = 720 Vdc IC=10Adc
td(on) —74 — ns
Rise T ime
(V
CC =
720
Vd
c,
I
C =
10
Ad
c,
VGE = 15 Vdc, L = 300
m
Htr—110 —
T urn–Off Delay Time
GE ,
m
RG = 20 Ω, TJ = 125°C)
Energy losses include
“
tail
”td(off) —80 —
Fall T ime
Energy
losses
include
“tail”
tf— 616 —
T urn–Off Switching Loss Eoff —1.60 — mJ
T urn–On Switching Loss Eon —2.30 —
Total Switching Loss Ets —3.90 —
Gate Charge
(V 720 Vdc I 10 Adc
QT— 31 — nC
(VCC = 720 Vdc, IC = 10 Adc,
V
GE
= 15 Vdc
)
Q1—13 —
VGE
=
15
Vdc)
Q2— 14 —
MGV12N120D
3
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 5 Adc)
(IEC = 5 Adc, TJ = 125°C)
(IEC = 10 Adc)
VFEC —
—
—
2.75
2.50
3.50
3.22
—
4.18
Vdc
Reverse Recovery Time
(I 10 Ad V 720 Vd
trr — 54 — ns
(IF = 10 Adc, VR = 720 Vdc, ta— 30 —
(F,R,
dIF/dt = 200 A/µs) tb— 24 —
Reverse Recovery Stored Charge QRR —61 — µC
Reverse Recovery Time
(I 10 Ad V 720 Vd
trr — 150 — ns
(IF = 10 Adc, VR = 720 Vdc, ta— 102 —
(F,R,
dIF/dt = 200 A/µs, TJ = 125°C) tb— 48 —
Reverse Recovery Stored Charge QRR —653 — µC
(1) Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
MGV12N120D
4Motorola IGBT Device Data
PACKAGE DIMENSIONS
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.588 0.592 14.94 15.04
INCHES
B0.623 0.627 15.82 15.93
C0.196 0.200 4.98 5.08
D0.048 0.052 1.22 1.32
E0.058 0.062 1.47 1.57
F0.078 0.082 1.98 2.08
G0.430 BSC 1.092 BSC
H0.105 0.110 2.67 2.79
J0.018 0.022 0.46 0.56
K0.150 0.160 3.81 4.06
L0.058 0.062 1.47 1.57
N0.353 0.357 8.97 9.07
P0.078 0.082 1.98 2.08
Q0.053 0.057 1.35 1.45
R0.623 0.627 15.82 15.93
S0.313 0.317 7.95 8.05
U0.028 0.032 0.71 0.81
V0.050 ––– 1.27 –––
W0.054 0.058 1.37 1.47
X0.050 0.060 1.27 1.52
Y0.104 0.108 2.64 2.74
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 433–01
ISSUE B
W
Y
V
P
UF
K
N
Q
B
S
D
G
2
4
13
A
2 PL 2 PL
L
M
0.13 (0.005) T
SEATING
J
H
X
E
C
PLANE
–T–
R
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MGV12N120D/D
*MGV12N120D/D*
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