This is information on a product in full production.
June 2013 DocID024745 Rev 1 1/17
17
STGW20H60DF,
STGWT20H60DF
600 V, 20 A high speed
trench gate field-stop IGBT
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•High speed switching
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Short-circuit rated
•Ultrafast soft recovery antiparallel diode
Applications
•Motor control
•UPS, PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
V
CE(sat)
temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
TO-247 TO-3P
123
1
2
3
TAB
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order codes Marking Packages Packaging
STGW20H60DF GW20H60DF TO-247 Tube
STGWT20H60DF GWT20H60DF TO-3P Tube
www.st.com
Contents STGW20H60DF, STGWT20H60DF
2/17 DocID024745 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DocID024745 Rev 1 3/17
STGW20H60DF, STGWT20H60DF Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rati ngs
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 40 A
Continuous collector current at T
C
= 100 °C 20 A
I
CP (1)
1. Limited by maximum junction temperature.
Pulsed collector current 80 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current T
C
= 25 °C 40 A
Continuous forward current at T
C
= 100 °C 20
I
FP(2)
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Pulsed forward current 80 A
P
TOT
Total dissipation at T
C
= 25 °C 167 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.9 °C/W
R
thJC
Thermal resistance junction-case diode 2.5 °C/W
R
thJA
Thermal resistance junction-ambient 62.5 °C/W
Electrical characteristics STGW20H60DF, STGWT20H60DF
4/17 DocID024745 Rev 1
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 20 A 1.6 2.0
V
V
GE
= 15 V, I
C
= 20 A
T
J
= 125 °C 1.75
V
GE
= 15 V, I
C
= 20 A
T
J
= 175 °C 1.8
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 25 μA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-2750- pF
C
oes
Output capacitance - 110 - pF
C
res
Reverse transfer
capacitance -65-pF
Q
g
Total gate charge
V
CC
= 400 V, I
C
= 20 A,
V
GE
= 15 V
-115-nC
Q
ge
Gate-emitter charge - 22 - nC
Q
gc
Gate-collector charge - 45 - nC
DocID024745 Rev 1 5/17
STGW20H60DF, STGWT20H60DF Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10 Ω, V
GE
= 15 V
42.5 - ns
t
r
Current rise time 11.9 - ns
(di/dt)on Turn-on current slope 1345 - A/μs
t
d(on)
Turn-on delay time V
CE
= 400 V, I
C
= 20 A,
R
G
= 10 Ω, V
GE
= 15 V
T
J
= 175 °C
42.5 - ns
t
r
Current rise time 13.4 ns
(di/dt)on Turn-on current slope 1180 A/μs
t
r(Voff)
Off voltage rise time
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10 Ω, V
GE
= 15 V
20 - ns
t
d(off)
Turn-off delay time 177 - ns
t
f
Current fall time 55 - ns
t
r(Voff)
Off voltage rise time V
CE
= 400 V, I
C
= 20 A,
R
G
= 10 Ω, V
GE
= 15 V
T
J
= 175 °C
26 - ns
t
d(off)
Turn-off delay time 173 - ns
t
f
Current fall time 86 - ns
t
sc
Short-circuit withstand time V
CC
≤ 360 V, V
GE
= 15 V 3 5 - μs
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eon
(1)
1. Energy losses include reverse recovery of the diode.
Turn-on switching losses
V
CE
= 400 V, I
C
= 20 A,
R
G
= 10 Ω, V
GE
= 15 V
- 209 - μJ
E
off (2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 261 - μJ
E
ts
Total switching losses - 470 - μJ
Eon
(1)
Turn-on switching losses V
CE
= 400 V, I
C
= 20 A,
R
G
= 10 Ω, V
GE
= 15 V
T
J
= 175 °C
- 480 - μJ
E
off (2)
Turn-off switching losses - 416 - μJ
E
ts
Total switching losses - 896 - μJ
Electrical characteristics STGW20H60DF, STGWT20H60DF
6/17 DocID024745 Rev 1
Table 8. Collector-emitter diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
F
Forward on-voltage I
F
= 20 A
I
F
= 20 A, T
J
= 175 °C -1.8
1.3
2.2 V
V
t
rr
Reverse recovery time
V
r
= 60 V; IF = 20 A;
di
F
/dt = 100 A / μs
-90-ns
Q
rr
Reverse recovery charge 110 nC
I
rrm
Reverse recovery current 2.4 A
t
rr
Reverse recovery time V
r
= 60 V; IF = 20 A;
di
F
/dt = 100 A / μs
T
J
= 175 °C
- 180 - ns
Q
rr
Reverse recovery charge - 466 - nC
I
rrm
Reverse recovery current - 5.2 - A
DocID024745 Rev 1 7/17
STGW20H60DF, STGWT20H60DF Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics (T
J
= 25°C) Figure 3. Output characteristics (T
J
= 175°C)
Figure 4. Transfer characteristics Figure 5. Normalized V
GE(th)
vs junction
temperature
9 V
I
C
60
40
20
002 V
CE
(V)
4
(A)
13
80
100
15 V 13 V
11 V
AM16287v1
9 V
7 V
15 V
IC
60
40
20
002 VCE(V)
4
(A)
13
80
100
13 V
11 V
AM16288v1
25 °C
IC
60
40
20
079 VGE(V)
11
(A)
810
80
100
175 °C
-40 °C
VCE= 5 V
AM16289v1
VCE= VGE
IC = 1 mA
VGE(th)
0.9
0.8
0.7
0.6
-75 25 TJ(°C)
125
(norm)
-25 75
1
AM16292v1
Electrical characteristics STGW20H60DF, STGWT20H60DF
8/17 DocID024745 Rev 1
Figure 6. Collector current vs. case temperature Figure 7. Collector current vs. frequency
Figure 8. V
CE(sat)
vs. junction temperature Figure 9. V
CE(sat)
vs. collector current
Figure 10. Forward bias safe operating area Figure 11. Thermal impedance
IC
24
16
8
0050 TC(°C)
100
(A)
25 75
32
40
125
AM16282v1
I
C
30
20
10
1f(kHz)
(A)
T
c
= 80°C
Rectangular current shape
(duty cycle= 0.5, V
CC
= 400 V
R
g
= 10 Ω, V
GE
= 0/15V, TJ= 175°C
10
40
T
c
= 100°C
50
60
AM162981V1
V
CE(sat)
1.9
1.7
1.5
1.3
-75 25 T
J
(°C)
125
(V)
-25 75
2.1
2.3
I
C
= 40 A
V
GE
= 15 V
I
C
= 20 A
I
C
= 10 A
AM16290V1
V
CE(sat)
2.2
1.8
1.4
1.0
020
I
C
(A)
(V)
10 30
V
GE
= 15 V
T
J
=
175 °C
T
J
=
-40 °C
T
J
=
25 °C
AM16291V1
(single pulse T
C
=25°C,
T
J
<=175°C; V
GE
=15V)
I
C
10
1
0.1 1 100 V
CE
(V)
(A)
10
1 ms
100 µs
V
CE(sat)
limit
AM16280V1
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/τ
tp
τ
Single pulse
δ=0.5
ZthTO2T_B
DocID024745 Rev 1 9/17
STGW20H60DF, STGWT20H60DF Electrical characteristics
Figure 12. Diode V
F
vs. forward current Figure 13. Gate charge vs. gate-emitter voltage
Figure 14. Capacitance variations vs. V
CE
Figure 15. Switching losses vs. gate resistance
Figure 16. Switching losses vs. collector
current Fig ure 17. Sw itch ing losses vs. tem pe rature
V
F
1.9
1.5
1.110 50 I
F
(A)
(V)
30
T
J
= -40 °C
20 40
2.3
T
J
= 25 °C
T
J
= 175 °C
AM16293V1
V
GE
8
4
00Q
g
(nC)
(V)
80
V
CC
= 400 V
I
C
= 20 A
40 120
12
16
AM16294V1
C
1000
100
100.1 V
CE
(V)
(pF)
10
C
oes
1
C
ies
C
res
AM16295V1
E
550
450
3500R
G
(Ω)
(µJ)
20
E
OFF
10
E
ON
30 40
650
750
V
CC
= 400 V, V
GE
= 15V,
I
C
= 20 A, T
J
= 175°C
AM16296V1
E
600
400
20010 I
C
(A)
(µJ)
20
E
OFF
E
ON
30
800
1000
V
CC
= 400 V, V
GE
= 15V,
R
g
= 10 Ω, T
J
= 175°C
AM162961V1
E
400
300
20025 T
J
(°C)
(µJ)
75
E
OFF
E
ON
125
V
CC
= 400 V, V
GE
= 15V,
R
g
= 10 Ω, I
C
= 20 A
AM16297V1
Electrical characteristics STGW20H60DF, STGWT20H60DF
10/17 DocID024745 Rev 1
Figure 18. Short-circuit time and current vs. V
GE
Figure 19. Power dissipation vs. case
temperature
t
sc
12
8
410 V
GE
(V)
(µs)
11
t
sc
I
sc
12
V
CC
= 360 V, R
g
= 10 Ω
13 14
16
I
sc
(A)
50
150
250
350
AM16298V1
P
tot
120
80
40
0050 T
C
(°C)
125
(W)
25 75
160
100 150
AM16281V1
DocID024745 Rev 1 11/17
STGW20H60DF, STGWT20H60DF Test circuits
3 Test circuits
Figure 20. Test circuit for inductive load
switching Figure 21. Gate charge test circuit
Figure 22. Switching waveform Figure 23. Diode recovery time waveform
AM01505v1
AM01507v1
IRRM
IF
di/dt
trr
tatb
Qrr
IRRM
t
VF
dv/dt
Package mechanical data STGW20H60DF, STGWT20H60DF
12/17 DocID024745 Rev 1
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 9. TO-247 mechan ical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID024745 Rev 1 13/17
STGW20H60DF, STGWT20H60DF Package mechanical data
Figure 24. TO-2 47 drawing
0075325_G
Package mechanical data STGW20H60DF, STGWT20H60DF
14/17 DocID024745 Rev 1
Table 10. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
DocID024745 Rev 1 15/17
STGW20H60DF, STGWT20H60DF Package mechanical data
Figure 25. TO-3P drawin g
8045950_A
Revision history STGW20H60DF, STGWT20H60DF
16/17 DocID024745 Rev 1
5 Revision history
Table 11. Document revision history
Date Revision Changes
06-Jun-2013 1 Initial release.
DocID024745 Rev 1 17/17
STGW20H60DF, STGWT20H60DF
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