2N3635 - Motorola / Freescale Semiconductor

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol 2N3635 2N3637 Unit

Collector–Emitter Voltage VCEO –140 –175 Vdc

Collector–Base Voltage VCBO –140 –175 Vdc

Emitter–Base Voltage VEBO –5.0 Vdc

Collector Current — Continuous IC–1.0 Adc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD1.0

5.71 Watts

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD5.0

28.6 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient R

JA 175 °C/W

Thermal Resistance, Junction to Case R

JC 35 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)

(IC = –10 mAdc, IB = 0) 2N3635

2N3637

V(BR)CEO –140

–175 —

—

Vdc

Collector–Base Breakdown Voltage

(IC = –100

Adc, IE = 0) 2N3635

2N3637

V(BR)CBO –140

–175 —

—

Vdc

Emitter–Base Breakdown Voltage

(IE = –10

Adc, IC = 0) V(BR)EBO –5.0 — Vdc

Collector Cutoff Current

(VCB = –100 Vdc, IE = 0) ICBO — –100 nAdc

Emitter Cutoff Current

(VEB = –3.0 Vdc, IC = 0) IEBO —–50 nAdc

1. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N3635

2N3637

CASE 79–04, STYLE 1

TO–39 (TO–205AD)

 Motorola, Inc. 1996

COLLECTOR

BASE

EMITTER

(Replaces 2N3634/D)

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2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –10 Vdc)

(IC = –1.0 mAdc, VCE = –10 Vdc)

(IC = –10 mAdc, VCE = –10 Vdc)(1)

(IC = –50 mAdc, VCE = –10 Vdc)(1)

(IC = –150 mAdc, VCE = –10 Vdc)(1)

hFE 80

100

—

300

—

Collector–Emitter Saturation V oltage (1)

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VCE(sat) —

—–0.3

–0.5

Vdc

Base–Emitter Saturation V oltage (1)

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VBE(sat) —

–0.65 –0.8

–0.9

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(VCE = –30 Vdc, IC = –30 mAdc, f = 100 MHz) fT200 — MHz

Output Capacitance

(VCB = –20 Vdc, IE = 0, f = 1.0 MHz) Cobo — 10 pF

Input Capacitance

(VEB = –1.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 75 pF

Input Impedance

(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hie 200 1200 Ω

Voltage Feedback Ratio

(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hre — 3.0 X 10–4

Small–Signal Current Gain

(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hfe 80 320 —

Output Admittance

(IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hoe — 200 µmhos

Noise Figure

(IC = –0.5 mAdc, VCE = –10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF — 3.0 dB

SWITCHING CHARACTERISTICS

Turn–On Time (VCC = –100 Vdc, VBE = 4.0 Vdc, ton — 400 ns

Turn–Off Time

(CC BE

IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc) toff — 600 ns

1. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

100

5.0 –1.0

REVERSE BIAS (VOLTS)

Figure 1. Junction Capacitance Variations

–2.0 –5.0 –10 –20 –100

Cob

500

300

200

100

IE, EMITTER CURRENT (mA)

Figure 2. Gain–Bandwidth Product

VCE = –10 V

TJ = 25°C

–50–0.1 –0.2 –0.5

7.0

Cib

fr, GAIN–BANDWIDTH PRODUCT (MHz)

C, CAPACITANCE (pF)

–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70–100–0.3 –3.0 –30

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

IC, COLLECTOR CURRENT (mA)

300

10 –7.0 –20

Figure 3. Current Gain Characteristics versus Junction Temperature

TJ = 125°C

hFE, DC CURRENT GAIN

–100 –200

TJ = 25°C

TJ = –55°C

2N3635

VCE = –2.0 V

–70–50–30–10–5.0–3.0

–2.0

–1.0

100

200

IC, COLLECTOR CURRENT (mA)

0.1 –7.0 –20

Figure 4. Current Gain Characteristics versus Collector Emitter Voltage

NORMALIZED DC CURRENT GAIN

–100 –200

–70–50–30–10–5.0–3.0

–2.0

–1.0

2N3635

TJ = 25°C

2.0

1.0

0.2

0.3

0.5

0.7

NORMALIZED TO VCE = –10 V IC = –50 mA

VCE = –10 V

VCE = –2.0 V

VCE = –1.0 V

IC, COLLECTOR CURRENT (mA)

300

10 –7.0 –20

Figure 5. Current Gain Characteristics versus Junction Temperature

TJ = 125°C

hFE, DC CURRENT GAIN

–100 –200

TJ = 25°C

TJ = –55°C

2N3637

VCE = –2.0 V

–70–50–30–10–5.0–3.0

–2.0

–1.0

100

200

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4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

IC, COLLECTOR CURRENT (mA)

0.1 –7.0 –20

Figure 6. Current Gain Characteristics versus Collector Emitter Voltage

NORMALIZED DC CURRENT GAIN

–100 –200

–70–50–30–10–5.0–3.0

–2.0

–1.0

2N3637

TJ = 25°C

2.0

1.0

0.2

0.3

0.5

0.7

NORMALIZED TO VCE = –10 V, IC = –50 mA

VCE = –10 V

VCE = –2.0 V

VCE = –1.0 V

5.0

IE, EMITTER CURRENT (mA)

–0.1 –2.0 –3.0 –5.0 –7.0 –10–1.0–0.7–0.5–0.3–0.2

0.5

0.7

1.0

2.0

3.0

7.0

NPU

MS)

h , OUTPUT IMPEDANCE (

ohms)

7.0

5.0

–0.1 –2.0 –3.0 –5.0 –7.0 –10–1.0–0.7–0.5–0.3–0.2 IE, EMITTER CURRENT (mA)

Figure 7. Input Impedance Figure 8. Output Impedance

2N3635, 2N3637

IE, EMITTER CURRENT (mA)

–0.1 –2.0 –3.0 –5.0 –7.0 –10–1.0–0.7–0.5–0.3–0.2

100

150

200

–0.1 –2.0 –3.0 –5.0 –7.0 –10–1.0–0.7–0.5–0.3–0.2 IE, EMITTER CURRENT (mA)

Figure 9. Current Gain Figure 10. Voltage Feedback Ratio

2N3635, 2N3637

h , VOLTAGE FEEDBACK RATIO (X 10 )

re –4

RRE

0.7

1.0

2.0

3.0

5.0

7.0

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

IC, COLLECTOR CURRENT (mA)

–2.0 –3.0 –5.0 –10–1.0

–1.0

IC, COLLECTOR CURRENT (mA)

Figure 11. Saturation Voltages Figure 12. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1000

IC, COLLECTOR CURRENT (mA)

Figure 13. Switching Time Test Circuit

Figure 14. Turn–On Time Variations

with Voltage

sat

SAT

RATIO

VOLTA

(

VOLTS)

V, TEMPERATURE COEFFICIENT (mV/ C)°θ

TIME

t, TIME (ns)

–0.8

–0.6

–0.4

–0.2

–0 –20 –30 –50 –100 –200

βF = 10

TJ = 25°CVBE(sat)

VCE(sat)

θVC for VCE(sat)

(25°C to –55°C)

+1.0

+0.5

–0.5

–1.0

–1.5

–2.00 –50 –100 –150 –200

θVB for VBE(sat)

(25°C to 125°C)

(25°C to –55°C)

(25°C to 125°C)

CURVES APPLY TO ALL DEVICE TYPES

EXCEPT WHERE INDICATED

5.0

7.0

100

200

300

500

700

–2.0–3.0 –5.0 –10–1.0 –20 –30 –50 –100 –200

5000

100

200

300

500

700

1000

2000

3000

–2.0–3.0 –5.0 –10–1.0 –20 –30 –50 –100 –200

βF = 10

TJ = 25°C

VCC = –100 V

VCC = –10 V

2N3637

2N3635

td @ VOB = 0 V

VCC = –100 V

TJ = 25°C

βF = 20

βF = 10

βF = 20

βF = 10

Vmax Vin

Vmin

2.0 k

1.0 k

Vin

–100 V

P.W.

20 µs

DUTY CYCLE ≤ 2%

RISE TIME ≤ 20 ns

Vmax Vmin

TURN–ON

TURN–OFF +4.0 V

+4.1 V –5.65 V

–5.9 V

Figure 15. Turn–Off Time Variations with

Circuit Gain

–7.0 –70

–7.0 –70 –7.0 –70

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6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 079–04

(TO–205AD)

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION J MEASURED FROM DIMENSION A

MAXIMUM.

4. DIMENSION B SHALL NOT VARY MORE THAN

0.25 (0.010) IN ZONE R. THIS ZONE

CONTROLLED FOR AUTOMATIC HANDLING.

5. DIMENSION F APPLIES BETWEEN DIMENSION

P AND L. DIMENSION D APPLIES BETWEEN

DIMENSION L AND K MINIMUM. LEAD

DIAMETER IS UNCONTROLLED IN DIMENSION

P AND BEYOND DIMENSION K MINIMUM.

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

SEATING

PLANE

D3 PL

–T–

–A–

–H–

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.335 0.370 8.51 9.39

B0.305 0.335 7.75 8.50

C0.240 0.260 6.10 6.60

D0.016 0.021 0.41 0.53

E0.009 0.041 0.23 1.04

F0.016 0.019 0.41 0.48

G0.200 BSC 5.08 BSC

H0.028 0.034 0.72 0.86

J0.029 0.045 0.74 1.14

K0.500 0.750 12.70 19.05

L0.250 ––– 6.35 –––

M45 BSC 45 BSC

P––– 0.050 ––– 1.27

R0.100 ––– 2.54 –––

0.36 (0.014) H M

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Opportunity/Af firmative Action Employer .

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2N3635/D

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