VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half Bridge Inverter Stage, 60 A, 57 A FEATURES * Warp1 and Warp2 PFC IGBT * FRED Pt(R) and HEXFRED(R) antiparallel diodes * FRED Pt(R) clamping diodes * Integrated thermistor * Square RBSOA * Low internal inductances EMIPAK2 * Low switching loss * UL approved file E78996 PRODUCT SUMMARY * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 LEVEL OF HALF-BRIDGE VCES 600 V VCE(ON) typical at IC = 50 A 1.8 V DESCRIPTION IC at TC = 98 C 50 A VS-EMF050J60U is an integrated solution for a multi level inverter half-bridge in a single package. The EMIPAK2 package is easy to use thanks to the solderable terminals and provides improved thermal performance thanks to the exposed substrate. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. 2 LEVEL OF HALF-BRIDGE VCES 900 V VCE(ON) typical at IC = 50 A 2.73 V IC at TC = 93 C 50 A Speed 30 kHz to 150 kHz Package EMIPAK2 Circuit 3-levels half bridge inverter stage ABSOLUTE MAXIMUM RATINGS PARAMETER Operating junction temperature SYMBOL TEST CONDITIONS MAX. TJ 150 Storage temperature range TStg -40 to +125 RMS isolation voltage VISOL TJ = 25 C, all terminals shorted, f = 50 Hz, t = 1 s 3500 UNITS C V Q1 - Q4 IGBT Collector to emitter voltage VCES 600 Gate to emitter voltage VGES 20 ICM 150 ILM (1) 150 Pulsed collector current Clamped inductive load current Continuous collector current IC Power dissipation PD TC = 25 C 88 TC = 80 C 60 TC = 25 C 338 TC = 80 C 189 V A A W Q2 - Q3 IGBT Collector to emitter voltage VCES 900 Gate to emitter voltage VGES 20 Pulsed collector current ICM 150 Clamped inductive load current ILM (2) Continuous collector current IC Power dissipation PD 150 TC = 25 C 85 TC = 80 C 57 TC = 25 C 338 TC = 80 C 189 V A A W Revision: 12-Jun-15 Document Number: 93494 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V D1 - D2 CLAMPING DIODE Repetitive peak reverse voltage VRRM Single pulse forward current IFSM Diode continuous forward current Power dissipation IF PD 10 ms sine or 6 ms rectangular pulse, TJ = 25 C 270 TC = 25 C 68 TC = 80 C 46 TC = 25 C 150 TC = 80 C 84 10 ms sine or 6 ms rectangular pulse, TJ = 25 C 280 TC = 25 C 53 TC = 80 C 36 A W D3 - D4 AP DIODE Single pulse forward current IFSM Diode continuous forward current IF Power dissipation PD TC = 25 C 176 TC = 80 C 99 10 ms sine or 6 ms rectangular pulse, TJ = 25 C 220 A W D5 - D6 AP DIODE Single pulse forward current IFSM Diode continuous forward current IF Power dissipation PD TC = 25 C 46 TC = 80 C 31 TC = 25 C 96 TC = 80 C 54 A A W Notes * Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (1) V CC = 400 V, VGE = 15 V, L = 500 H, Rg = 22 , TJ = 150 C (2) V CC = 720 V, VGE = 15 V, L = 500 H, Rg = 22 , TJ = 150 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS 600 - - V VGE = 0 V, IC = 500 A (25 C to 125 C) - 0.1 - V/C VGE = 15 V, IC = 27 A - 1.44 1.75 VGE = 15 V, IC = 50 A - 1.8 2.1 VGE = 15 V, IC = 27 A, TJ = 125 C - 1.7 2.05 VGE = 15 V, IC = 50 A, TJ = 125 C - 2.2 2.5 2.9 3.9 5.3 VCE = VGE, IC = 1 mA (25 C to 125 C) - -10 - mV/C Q1 - Q4 IGBT Collector to emitter breakdown voltage BVCES Temperature coefficient of breakdown voltage BVCES/TJ Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage VCE(ON) VGE(th) VGE(th)/TJ VGE = 0 V, IC = 500 A VCE = VGE, IC = 250 A V Forward transconductance gfe VCE = 20 V, IC = 50 A - 95 - s Transfer characteristics VGE VCE = 20 V, IC = 50 A - 5.9 - V 0.003 0.1 ICES VGE = 0 V, VCE = 600 V - Zero gate voltage collector current VGE = 0 V, VCE = 600 V, TJ = 125 C - 0.170 3 VGE = 20 V, VCE = 0 V - - 200 Gate to emitter leakage current IGES mA nA Revision: 12-Jun-15 Document Number: 93494 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS 900 - - V VGE = 0 V, IC = 500 A (25 C to 125 C) - -8.5 - V/C VGE = 15 V, IC = 27 A - 2.45 2.8 VGE = 15 V, IC = 50 A - 2.73 3.2 VGE = 15 V, IC = 27 A, TJ = 125 C - 2 2.35 Q2 - Q3 IGBT Collector to emitter breakdown voltage BVCES Temperature coefficient of breakdown voltage BVCES/TJ Collector to emitter voltage VCE(ON) VGE = 0 V, IC = 500 A VGE = 15 V, IC = 50 A, TJ = 125 C Gate threshold voltage Temperature coefficient of threshold voltage VGE(th) VGE(th)/TJ - 2.43 2.9 2.8 4.5 6.3 VCE = VGE, IC = 1 mA (25 C to 125 C) - -11.7 - mV/C 68 - s V VCE = VGE, IC = 250 A Forward transconductance gfe VCE = 20 V, IC = 50 A - Transfer characteristics VGE VCE = 20 V, IC = 50 A - 6.9 - VGE = 0 V, VCE = 900 V - 0.006 0.38 VGE = 0 V, VCE = 900 V, TJ = 125 C - 1.4 3 IGES VGE = 20 V, VCE = 0 V - - 200 Cathode to anode blocking voltage VBR IR = 100 A 600 - - 1.84 2.12 VFM IF = 30 A - Forward voltage drop IF = 30 A, TJ = 125 C - 1.37 1.65 VR = 600 V - 0.002 0.1 VR = 600 V, TJ = 125 C - 0.9 6 IF = 50 A - 2.7 3.2 IF = 50 A TJ = 125 C - 2.8 3.3 IF = 30 A - 1.93 2.37 IF = 30 A TJ = 125 C - 1.48 1.9 Zero gate voltage collector current Gate to emitter leakage current ICES V mA nA D1 - D2 CLAMPING DIODE Reverse leakage current IRM V mA D3 - D4 AP DIODE Forward voltage drop VFM V D5 - D6 AP DIODE Forward voltage drop VFM V Revision: 12-Jun-15 Document Number: 93494 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q1 - Q4 IGBT (WITH FREEWHEELING D1 - D2 CLAMPING DIODE) Total gate charge (turn-on) Qg IC = 70 A - 480 720 Gate to ermitter charge (turn-on) Qge VCC = 400 V - 82 164 Gate to collector charge (turn-on) Qgc VGE = 15 V - 160 260 Turn-on switching loss EON - 0.11 - Turn-off switching loss EOFF - 0.76 - Total switching loss ETOT - 0.87 - Turn-on delay time td(on) - 182 - - 46 - - 207 - - 92 - Rise time Turn-off delay time Fall time tr td(off) tf Turn-on switching loss EON Turn-off switching loss EOFF Total switching loss ETOT Turn-on delay time td(on) Rise time Turn-off delay time Fall time IC = 50 A VCC = 400 V VGE = 15 V Rg = 4.7 L = 500 H (1) tr td(off) - 0.25 - IC = 50 A VCC = 400 V VGE = 15 V Rg = 4.7 L = 500 H TJ = 125 C (1) - 0.88 - - 1.13 - - 183 - - 47 - - 211 - VGE = 0 V VCC = 30 V f = 1 MHz tf - 101 Input capacitance Cies - 9500 Output capacitance Coes - 780 Reverse transfer capacitance Cres - 116 Reverse bias safe operating area RBSOA TJ = 150 C, IC = 150 A VCC = 400 V, VP = 600 V Rg = 22 , VGE = 15 V to 0 V nC mJ ns mJ ns pF Fullsquare Q2 - Q3 IGBT (WITH FREEWHEELING D3 - D4 AP DIODE) Total gate charge (turn-on) Qg IC = 50 A - 320 480 Gate to emitter charge (turn-on) Qge VCC = 400 V - 38 58 Gate to collector charge (turn-on) Qgc VGE = 15 V - 106 160 Turn-on switching loss EON - 0.56 - Turn-off switching loss EOFF IC = 50 A - 0.68 - Total switching loss ETOT VCC = 720 V - 1.24 - Turn-on delay time td(on) VGE = 15 V Rg = 4.7 L = 500 H (1) - 152 - Rise time Turn-off delay time Fall time tr td(off) - 48 - - 165 - tf - 100 - Turn-on switching loss EON - 0.95 - Turn-off switching loss EOFF - 2.18 - Total switching loss ETOT - 3.13 - Turn-on delay time td(on) IC = 50 A VCC = 720 V VGE = 15 V Rg = 4.7 L = 500 H TJ = 125 C (1) - 154 - - 52 - - 168 - - 360 - VGE = 0 V VCC = 30 V f = 1 MHz - 6600 - - 400 - - 90 - Rise time Turn-off delay time Fall time tr td(off) tf Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Reverse bias safe operating area RBSOA TJ = 150 C, IC = 150 A VCC = 720 V, VP = 900 V Rg = 22 , VGE = 15 V to 0 V nC mJ ns mJ ns pF Fullsquare Revision: 12-Jun-15 Document Number: 93494 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS ns D1 - D2 CLAMPING DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr VR = 200 V IF = 30 A dl/dt = 500 A/s - 50 80 - 7.5 11 A - 185 440 nC VR = 200 V IF = 30 A dl/dt = 500 A/s, TJ = 125 C - 107 147 ns - 18 22 A - 955 1620 nC VR = 400 V IF = 50 A dl/dt = 500 A/s - 114 150 ns - 21 25 A - 1200 1875 nC VR = 400 V IF = 50 A dl/dt = 500 A/s, TJ = 125 C - 170 210 ns - 28 32 A - 2160 3360 nC VR = 200 V IF = 30 A dl/dt = 500 A/s - 46 77 ns - 7 11 A - 161 423 nC VR = 200 V IF = 30 A dl/dt = 500 A/s, TJ = 125 C - 106 138 ns D3 - D4 AP DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr D5 - D6 AP DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr - 17 22 A - 900 1518 nC Note (1) Energy losses include "tail" and diode reverse recovery. THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise noted) PARAMETER Resistance B value SYMBOL TEST CONDITIONS B TYP. MAX. 4500 5000 5500 TJ = 100 C 468 493 518 TJ = 25 C/TJ = 50 C 3206 3375 3544 R25 R100 MIN. UNITS K THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER MIN. TYP. MAX. Q1 - Q4 IGBT - Junction to case thermal resistance (per switch) - - 0.37 Q2 - Q3 IGBT - Junction to case thermal resistance (per switch) - - 0.37 D1 - D2 Clamping diode - Junction to case thermal resistance (per diode) SYMBOL RthJC UNITS - - 0.83 D3 - D4 AP diode - Junction to case thermal resistance (per diode) - - 0.71 D5 - D6 AP diode - Junction to case thermal resistance (per diode) - - 1.3 Q1 - Q4 IGBT - Case to sink thermal resistance (per switch) - 0.31 - - 0.31 - - 0.51 - D3 - D4 AP diode - Case to sink thermal resistance (per diode) - 0.41 - D5 - D6 AP diode - Case to sink thermal resistance (per diode) - 0.62 - Mounting torque (M4) 2 - 3 Nm Weight - 39 - g Q2 - Q3 IGBT - Case to sink thermal resistance (per switch) D1 - D2 Clamping diode - Case to sink thermal resistance (per diode) RthCS (1) C/W Note (1) Mounting surface flat, smooth, and greased Revision: 12-Jun-15 Document Number: 93494 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors 100 4.0 VGE = 15 V 90 VGE = 15 V TJ = 125 C 3.5 80 TJ = 150 C 50 TJ = 25 C 40 VCE (V) 60 IC (A) 100 A 3.0 70 30 2.5 50 A 2.0 1.5 27 A 20 1.0 10 0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE (V) 93494_01 10 100 160 100 TJ = 125 C 90 VCE = 20 V 90 80 80 70 70 50 40 60 ICE (A) VGE = 8 V VGE = 10 V VGE = 12 V VGE = 15 V VGE = 18 V 60 IC (A) 110 TJ (C) Fig. 4 - Typical Q1 - Q4 IGBT Collector to Emitter Voltage vs. Junction Temperature Fig. 1 - Typical Q1 - Q4 IGBT Output Characteristics TJ = 125 C 50 40 30 30 20 20 10 10 0 TJ = 25 C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE (V) 93494_02 3 4 5 6 7 8 VGE (V) 93494_05 Fig. 5 - Typical Q1 - Q4 IGBT Transfer Characteristics Fig. 2 - Typical Q1 - Q4 IGBT Output Characteristics 4.5 160 140 TJ = 25 C 4.0 120 DC 100 Vgeth (V) Allowable Case Temperature (C) 60 93494_04 80 60 3.5 3.0 TJ = 125 C 40 2.5 20 2.0 0 0 93494_03 20 40 60 80 0 100 IC - Continuous Collector Current (A) Fig. 3 - Maximum DC Q1 - Q4 IGBT Collector Current vs. Case Temperature per Junction 93494_06 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IC (mA) Fig. 6 - Typical Q1 - Q4 IGBT Gate Threshold Voltage Revision: 12-Jun-15 Document Number: 93494 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors Allowable Case Temperature (C) 1000 100 IC (A) 10 1 0.1 160 140 120 100 DC 80 60 40 20 0.01 0 1 10 100 1000 VCE (V) 93494_07 0 5 10 15 20 25 30 35 40 45 50 IF - Continuous Forward Current (A) 93494_10 Fig. 10 - Maximum DC D5 - D6 Antiparallel Diode Forward Current vs. Case Temperature per Junction Fig. 7 - Q1 - Q4 IGBT Reverse Bias SOA TJ = 150 C, VGE = 15 V, Rg = 22 1 1.8 1.6 1.4 125 C Energy (mJ) ICES (mA) 0.1 0.01 25 C 0.001 1.2 1.0 Eoff 0.8 0.6 0.4 Eon 0.2 0.0001 100 0 200 300 400 500 600 VCES (V) 93494_08 10 20 30 40 50 60 70 80 90 IC (A) 93494_11 Fig. 11 - Typical Q1 - Q4 IGBT Energy Loss vs. IC (with Freewheeling D1 - D2 Clamping Diode) VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 H Fig. 8 - Typical Q1 - Q4 IGBT Zero Gate Voltage Collector Current 100 1000 90 Switching Time (ns) 80 70 IF (A) 60 50 TJ = 125 C 40 TJ = 25 C 30 td(off) td(on) tf 100 tr 20 10 0 10 0 93494_09 0.5 1.0 1.5 2.0 2.5 3.0 VFM (V) Fig. 9 - Typical D5 - D6 Antiparallel Diode Forward Characteristics 10 93494_12 20 30 40 50 60 70 80 90 IC (A) Fig. 12 - Typical Q1 - Q4 IGBT Switching Time vs. IC (with Freewheeling D1 - D2 Clamping Diode) TJ = 125 C, VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 H Revision: 12-Jun-15 Document Number: 93494 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors 160 21 150 19 140 17 130 125 C 15 110 100 90 125 C 13 Irr (A) trr (ns) 120 11 9 80 7 70 25 C 5 25 C 60 3 50 40 100 200 300 400 1 100 500 dIF/dt (A/s) 93494_13 200 Fig. 13 - Typical D5 - D6 Antiparallel Diode Reverse Recovery Time vs. dIF/dt VR = 200 V, IF = 30 A 300 400 500 dIF/dt (A/s) 93494_14 Fig. 14 - Typical D5 - D6 Antiparallel Diode Reverse Recovery Current vs. dIF/dt VR = 200 V, IF = 30 A 1100 1000 900 800 125 C Qrr (nC) 700 600 500 400 300 200 25 C 100 0 100 200 300 400 500 dIF/dt (A/s) Fig. 15 - Typical D5 - D6 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt VR = 200 V, IF = 30 A 93494_15 ZthJC - Thermal Impedance Junction to Case (C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 93494_16 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (Q1 - Q4 IGBT) Revision: 12-Jun-15 Document Number: 93494 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93494_17 Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (D5 - D6 Antiparallel Diode) Allowable Case Temperature (C) 100 VGE = 15 V 90 80 70 IC (A) 60 TJ = 150 C 50 40 TJ = 125 C TJ = 25 C 30 20 10 160 140 120 DC 100 80 60 40 20 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE (V) 93494_18 0 Fig. 18 - Typical Q2 - Q3 IGBT Output Characteristics 40 60 80 100 Fig. 20 - Maximum DC Q2 - Q3 IGBT Collector Current vs. Case Temperature per Junction 100 4.0 TJ = 125 C 90 80 70 VGE = 15 V VGE = 9 V VGE = 12 V VGE = 15 V VGE = 18 V 3.5 100 A 3.0 VCE (V) 60 IC (A) 20 IC - Continuous Collector Current (A) 93494_20 50 40 50 A 2.5 2.0 30 27 A 20 1.5 10 0 1.0 0 93494_19 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE (V) Fig. 19 - Typical Q2 - Q3 IGBT Output Characteristics 10 93494_21 60 110 160 TJ (C) Fig. 21 - Typical Q2 - Q3 IGBT Collector to Emitter Voltage vs. Junction Temperature Revision: 12-Jun-15 Document Number: 93494 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors 100 10 VCE = 20 V 90 80 125 C 1 ICES (mA) 70 ICE (A) 60 TJ = 125 C 50 TJ = 25 C 40 0.1 0.01 30 25 C 20 0.001 10 0 4 5 6 7 8 VGE (V) 93494_22 0.0001 100 9 200 300 400 Fig. 22 - Typical Q1 - Q4 IGBT Transfer Characteristics 500 600 700 800 900 VCES (V) 93494_25 Fig. 25 - Typical Q2 - Q3 IGBT Zero Gate Voltage Collector Current 5.5 100 90 5.0 TJ = 25 C TJ = 25 C 80 4.5 TJ = 125 C 60 IF (A) Vgeth (V) 70 4.0 3.5 3.0 50 40 TJ = 125 C 30 2.5 20 2.0 10 1.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IC (mA) 93494_23 100 10 1 0.1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VFM (V) Fig. 26 - Typical D3 - D4 Antiparallel Diode Forward Characteristics Allowable Case Temperature (C) 1000 160 140 120 100 DC 80 60 40 20 0.01 0 1 93494_24 0.5 93494_26 Fig. 23 - Typical Q2 - Q3 IGBT Gate Threshold Voltage IC (A) 0 10 100 1000 VCE (V) Fig. 24 - Q2 - Q3 IGBT Reverse Bias SOA TJ = 150 C, VGE = 15 V, Rg = 22 0 93494_27 5 10 15 20 25 30 35 40 45 50 55 60 IF - Continuous Forward Current (A) Fig. 27 - Maximum DC D3 - D4 Antiparallel Diode Forward Current vs. Case Temperature per Junction Revision: 12-Jun-15 Document Number: 93494 10 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors 4.2 280 3.8 260 3.4 240 220 Eoff 2.6 trr (ns) Energy (mJ) 3.0 2.2 1.8 125 C 200 180 160 1.4 1.0 140 Eon 25 C 120 0.6 0.2 10 20 30 40 50 60 70 80 100 100 90 IC (A) 93494_28 200 Fig. 28 - Typical Q2 - Q3 IGBT Energy Loss vs. IC (with Freewheeling D2 - D3 AP Diode) VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 H 300 400 500 dIF/dt (A/s) 93494_30 Fig. 30 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Time vs. dIF/dt VR = 400 V, IF = 50 A 1000 32 24 td(off) td(on) 100 20 Irr (A) Switching Time (ns) 28 tf 125 C 25 C 16 tr 12 8 10 10 93494_29 20 30 40 50 60 70 80 4 100 90 IC (A) 200 400 500 dIF/dt (A/s) 93494_31 Fig. 29 - Typical Q2 - Q3 IGBT Switching Time vs. IC (with Freewheeling D2 - D3 AP Diode) TJ = 125 C, VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 H 300 Fig. 31 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Current vs. dIF/dt VR = 400 V, IF = 50 A 2500 2250 Qrr (nC) 2000 125 C 1750 1500 1250 1000 25 C 750 500 100 93494_32 200 300 400 500 dIF/dt (A/s) Fig. 32 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt VR = 400 V, IF = 50 A Revision: 12-Jun-15 Document Number: 93494 11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93494_33 Fig. 33 - Maximum Thermal Impedance ZthJC Characteristics (Q2 - Q3 IGBT) ZthJC - Thermal Impedance Junction to Case (C/W) 10 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93494_34 Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics (D3 - D4 Antiparallel Diode) Allowable Case Temperature (C) 100 90 80 70 TJ = 125 C IF (A) 60 50 TJ = 25 C 40 30 20 10 160 140 120 DC 100 80 60 40 20 0 0 0 93494_35 0.5 1.0 1.5 2.0 2.5 3.0 VFM (V) Fig. 35 - Typical D1 - D2 Clamping Diode Forward Characteristics 0 93494_36 10 20 30 40 50 60 70 IF - Continuous Forward Current (A) Fig. 36 - Maximum DC D1 - D2 Clamping Diode Forward Current vs. Case Temperature per Junction Revision: 12-Jun-15 Document Number: 93494 12 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors 10 21 19 1 17 15 0.1 125 C 13 Irr (A) IR (mA) 125 C 11 0.01 9 7 25 C 0.001 25 C 5 3 0.0001 100 200 300 400 500 1 100 600 VR (V) 93494_37 200 Fig. 37 - Typical D1 - D2 Clamping Diode Reverse Leakage Current 300 400 500 dIF/dt (A/s) 93494_39 Fig. 39 - Typical D1 - D2 Clamping Diode Reverse Recovery Current vs. dIF/dt VR = 200 V, IF = 30 A 1000 160 900 140 800 125 C Qrr (nC) 120 trr (ns) 125 C 700 100 80 600 500 400 300 25 C 200 60 25 C 100 40 100 200 300 400 0 100 500 dIF/dt (A/s) 93494_38 200 300 400 500 dIF/dt (A/s) 93494_40 Fig. 40 - Typical D1 - D2 Clamping Diode Reverse Recovery Charge vs. dIF/dt VR = 200 V, IF = 30 A Fig. 38 - Typical D1 - D2 Clamping Diode Reverse Recovery Time vs. dIF/dt VR = 200 V, IF = 30 A ZthJC - Thermal Impedance Junction to Case (C/W) 10 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 93494_41 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 41 - Maximum Thermal Impedance ZthJC Characteristics (D1 - D2 Clamping Diode) Revision: 12-Jun-15 Document Number: 93494 13 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- EM F 050 J 60 U 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Package indicator (EM = EMIPAK2) 3 - Circuit configuration (F = 3-levels half-bridge inverter stage) 4 - Current rating (050 = 50 A) 5 - Die technology (J = Warp2 IGBT) 6 - Voltage rating (60 = 600 V) 7 - U = Ultrafast TYPICAL CONNECTION Note * Please refer to lead assignment for correct pin configuration. This diagram shows electrical connections only. Revision: 12-Jun-15 Document Number: 93494 14 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EMF050J60U www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION + 400 V 17 35 Q1 D5 Inv_Drv1 9 33 D1 11 Q2 D3 Inv_Drv2 8 4 14 15 MID Q3 D4 3 Inv_Drv3 29 D2 2 30 VMID 36 Q4 1 D6 Inv_Drv3 - 400 V 23 5 24 Th 26 6 27 PACKAGE 6 5 3 2 1 4 8 14 15 9 11 33 29 36 30 24 23 17 35 26 27 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95436 Revision: 12-Jun-15 Document Number: 93494 15 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors EMIPAK2 DIMENSIONS in millimeters 15.2 12.7 8.9 Front view 55 0.3 Pins position with tolerance O 1 0.1 M4 O 0.4 5.1 14 11.4 10.2 7.6 7.6 6.4 3.8 2.6 1.3 13.3 3.2 1.9 1.3 5.1 2.5 6.3 Detail "A" Scale 10:1 Detail "A" 5 F 14 F 7 15.9 12.1 8.3 5.7 39 0.3 5 62 0.3 41.5 23 53 62 0.3 O2 O 12.1 20.5 1 3 ref. Top view 9.5 9.5 15.9 10.8 Side view 7 O 4.3 5.7 1.9 12 20.5 1 17 1 3.8 16.8 8.9 10.1 12.7 11.4 16.5 16.5 20.3 20.3 24.1 24.1 23.8 40.6 58 0.3 Ceramic gap Flat metal plate or with optional M4 thread Document Number: 95436 Revision: 27-Jan-11 0.1 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-EMF050J60U