VS-EMF050J60U
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3-Levels Half Bridge Inverter Stage, 60 A, 57 A
FEATURES
• Warp1 and Warp2 PFC IGBT
•FRED Pt
® and HEXFRED® antiparallel diodes
•FRED Pt
® clamping diodes
• Integrated thermistor
• Square RBSOA
• Low internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-EMF050J60U is an integrated solution for a multi level
inverter half-bridge in a single package. The EMIPAK2
package is easy to use thanks to the solderable terminals
and provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.
PRODUCT SUMMARY
1° LEVEL OF HALF-BRIDGE
VCES 600 V
VCE(ON) typical at IC = 50 A 1.8 V
IC at TC = 98 °C 50 A
2° LEVEL OF HALF-BRIDGE
VCES 900 V
VCE(ON) typical at IC = 50 A 2.73 V
IC at TC = 93 °C 50 A
Speed 30 kHz to 150 kHz
Package EMIPAK2
Circuit 3-levels half bridge inverter
stage
EMIPAK2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Operating junction temperature TJ150 °C
Storage temperature range TStg -40 to +125
RMS isolation voltage VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V
Q1 - Q4 IGBT
Collector to emitter voltage VCES 600 V
Gate to emitter voltage VGES 20
Pulsed collector current ICM 150 A
Clamped inductive load current ILM (1) 150
Continuous collector current IC
TC = 25 °C 88 A
TC = 80 °C 60
Power dissipation PD
TC = 25 °C 338 W
TC = 80 °C 189
Q2 - Q3 IGBT
Collector to emitter voltage VCES 900 V
Gate to emitter voltage VGES 20
Pulsed collector current ICM 150 A
Clamped inductive load current ILM (2) 150
Continuous collector current IC
TC = 25 °C 85 A
TC = 80 °C 57
Power dissipation PD
TC = 25 °C 338 W
TC = 80 °C 189
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Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) VCC = 400 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C
(2) VCC = 720 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
D1 - D2 CLAMPING DIODE
Repetitive peak reverse voltage VRRM 600 V
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 270
A
Diode continuous forward current IF
TC = 25 °C 68
TC = 80 °C 46
Power dissipation PD
TC = 25 °C 150 W
TC = 80 °C 84
D3 - D4 AP DIODE
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 280
A
Diode continuous forward current IF
TC = 25 °C 53
TC = 80 °C 36
Power dissipation PD
TC = 25 °C 176 W
TC = 80 °C 99
D5 - D6 AP DIODE
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 220 A
Diode continuous forward current IF
TC = 25 °C 46 A
TC = 80 °C 31
Power dissipation PD
TC = 25 °C 96 W
TC = 80 °C 54
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 IGBT
Collector to emitter breakdown voltage BVCES VGE = 0 V, IC = 500 μA 600 - - V
Temperature coefficient of breakdown
voltage BVCES/TJVGE = 0 V, IC = 500 μA (25 °C to 125 °C) - 0.1 - V/°C
Collector to emitter voltage VCE(ON)
VGE = 15 V, IC = 27 A - 1.44 1.75
V
VGE = 15 V, IC = 50 A - 1.8 2.1
VGE = 15 V, IC = 27 A, TJ = 125 °C - 1.7 2.05
VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.2 2.5
Gate threshold voltage VGE(th) VCE = VGE, IC = 250 μA 2.9 3.9 5.3
Temperature coefficient of threshold
voltage VGE(th)/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -10 - mV/°C
Forward transconductance gfe VCE = 20 V, IC = 50 A - 95 - s
Transfer characteristics VGE VCE = 20 V, IC = 50 A - 5.9 - V
Zero gate voltage collector current ICES
VGE = 0 V, VCE = 600 V - 0.003 0.1
mA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.170 3
Gate to emitter leakage current IGES VGE = ± 20 V, VCE = 0 V - - ± 200 nA
ABSOLUTE MAXIMUM RATINGS
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PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q2 - Q3 IGBT
Collector to emitter breakdown voltage BVCES VGE = 0 V, IC = 500 μA 900 - - V
Temperature coefficient of breakdown
voltage BVCES/TJVGE = 0 V, IC = 500 μA (25 °C to 125 °C) - -8.5 - V/°C
Collector to emitter voltage VCE(ON)
VGE = 15 V, IC = 27 A - 2.45 2.8
V
VGE = 15 V, IC = 50 A - 2.73 3.2
VGE = 15 V, IC = 27 A, TJ = 125 °C - 2 2.35
VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.43 2.9
Gate threshold voltage VGE(th) VCE = VGE, IC = 250 μA 2.8 4.5 6.3
Temperature coefficient of threshold
voltage VGE(th)/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -11.7 - mV/°C
Forward transconductance gfe VCE = 20 V, IC = 50 A - 68 - s
Transfer characteristics VGE VCE = 20 V, IC = 50 A - 6.9 - V
Zero gate voltage collector current ICES
VGE = 0 V, VCE = 900 V - 0.006 0.38
mA
VGE = 0 V, VCE = 900 V, TJ = 125 °C - 1.4 3
Gate to emitter leakage current IGES VGE = ± 20 V, VCE = 0 V - - ± 200 nA
D1 - D2 CLAMPING DIODE
Cathode to anode blocking voltage VBR IR = 100 μA 600 - -
V
Forward voltage drop VFM
IF = 30 A - 1.84 2.12
IF = 30 A, TJ = 125 °C - 1.37 1.65
Reverse leakage current IRM
VR = 600 V - 0.002 0.1
mA
VR = 600 V, TJ = 125 °C - 0.9 6
D3 - D4 AP DIODE
Forward voltage drop VFM
IF = 50 A - 2.7 3.2
V
IF = 50 A TJ = 125 °C - 2.8 3.3
D5 - D6 AP DIODE
Forward voltage drop VFM
IF = 30 A - 1.93 2.37
V
IF = 30 A TJ = 125 °C - 1.48 1.9
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 IGBT (WITH FREEWHEELING D1 - D2 CLAMPING DIODE)
Total gate charge (turn-on) QgIC = 70 A
VCC = 400 V
VGE = 15 V
- 480 720
nC
Gate to ermitter charge (turn-on) Qge - 82 164
Gate to collector charge (turn-on) Qgc - 160 260
Turn-on switching loss EON
IC = 50 A
VCC = 400 V
VGE = 15 V
Rg = 4.7
L = 500 μH (1)
-0.11-
mJTurn-off switching loss EOFF -0.76-
Total switching loss ETOT -0.87-
Turn-on delay time td(on) -182-
ns
Rise time tr-46-
Turn-off delay time td(off) -207-
Fall time tf-92-
Turn-on switching loss EON
IC = 50 A
VCC = 400 V
VGE = 15 V
Rg = 4.7
L = 500 μH
TJ = 125 °C (1)
-0.25-
mJTurn-off switching loss EOFF -0.88-
Total switching loss ETOT -1.13-
Turn-on delay time td(on) -183-
ns
Rise time tr-47-
Turn-off delay time td(off) -211-
Fall time tf-101-
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1 MHz
- 9500
pFOutput capacitance Coes -780
Reverse transfer capacitance Cres -116
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 150 A
VCC = 400 V, VP = 600 V
Rg = 22 , VGE = 15 V to 0 V
Fullsquare
Q2 - Q3 IGBT (WITH FREEWHEELING D3 - D4 AP DIODE)
Total gate charge (turn-on) QgIC = 50 A
VCC = 400 V
VGE = 15 V
- 320 480
nC
Gate to emitter charge (turn-on) Qge -3858
Gate to collector charge (turn-on) Qgc - 106 160
Turn-on switching loss EON
IC = 50 A
VCC = 720 V
VGE = 15 V
Rg = 4.7
L = 500 μH (1)
-0.56-
mJTurn-off switching loss EOFF -0.68-
Total switching loss ETOT -1.24-
Turn-on delay time td(on) -152-
ns
Rise time tr-48-
Turn-off delay time td(off) -165-
Fall time tf-100-
Turn-on switching loss EON
IC = 50 A
VCC = 720 V
VGE = 15 V
Rg = 4.7
L = 500 μH
TJ = 125 °C (1)
-0.95-
mJTurn-off switching loss EOFF -2.18-
Total switching loss ETOT -3.13-
Turn-on delay time td(on) -154-
ns
Rise time tr-52-
Turn-off delay time td(off) -168-
Fall time tf-360-
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1 MHz
- 6600 -
pFOutput capacitance Coes -400-
Reverse transfer capacitance Cres -90-
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 150 A
VCC = 720 V, VP = 900 V
Rg = 22 , VGE = 15 V to 0 V
Fullsquare
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Note
(1) Energy losses include “tail” and diode reverse recovery.
Note
(1) Mounting surface flat, smooth, and greased
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
D1 - D2 CLAMPING DIODE
Diode reverse recovery time trr VR = 200 V
IF = 30 A
dl/dt = 500 A/μs
-5080ns
Diode peak reverse current Irr -7.511 A
Diode recovery charge Qrr - 185 440 nC
Diode reverse recovery time trr VR = 200 V
IF = 30 A
dl/dt = 500 A/μs, TJ = 125 °C
- 107 147 ns
Diode peak reverse current Irr -1822A
Diode recovery charge Qrr - 955 1620 nC
D3 - D4 AP DIODE
Diode reverse recovery time trr VR = 400 V
IF = 50 A
dl/dt = 500 A/μs
- 114 150 ns
Diode peak reverse current Irr -2125A
Diode recovery charge Qrr - 1200 1875 nC
Diode reverse recovery time trr VR = 400 V
IF = 50 A
dl/dt = 500 A/μs, TJ = 125 °C
- 170 210 ns
Diode peak reverse current Irr -2832A
Diode recovery charge Qrr - 2160 3360 nC
D5 - D6 AP DIODE
Diode reverse recovery time trr VR = 200 V
IF = 30 A
dl/dt = 500 A/μs
-4677ns
Diode peak reverse current Irr -711A
Diode recovery charge Qrr - 161 423 nC
Diode reverse recovery time trr VR = 200 V
IF = 30 A
dl/dt = 500 A/μs, TJ = 125 °C
- 106 138 ns
Diode peak reverse current Irr -1722A
Diode recovery charge Qrr - 900 1518 nC
THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R25 4500 5000 5500
R100 TJ = 100 °C 468 493 518
B value B TJ = 25 °C/TJ = 50 °C 3206 3375 3544 K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Q1 - Q4 IGBT - Junction to case thermal resistance (per switch)
RthJC
--0.37
°C/W
Q2 - Q3 IGBT - Junction to case thermal resistance (per switch) - - 0.37
D1 - D2 Clamping diode - Junction to case thermal resistance (per diode) - - 0.83
D3 - D4 AP diode - Junction to case thermal resistance (per diode) - - 0.71
D5 - D6 AP diode - Junction to case thermal resistance (per diode) - - 1.3
Q1 - Q4 IGBT - Case to sink thermal resistance (per switch)
RthCS (1)
-0.31-
Q2 - Q3 IGBT - Case to sink thermal resistance (per switch) - 0.31 -
D1 - D2 Clamping diode - Case to sink thermal resistance (per diode) - 0.51 -
D3 - D4 AP diode - Case to sink thermal resistance (per diode) - 0.41 -
D5 - D6 AP diode - Case to sink thermal resistance (per diode) - 0.62 -
Mounting torque (M4) 2-3Nm
Weight -39- g
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
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Fig. 1 - Typical Q1 - Q4 IGBT Output Characteristics
Fig. 2 - Typical Q1 - Q4 IGBT Output Characteristics
Fig. 3 - Maximum DC Q1 - Q4 IGBT Collector Current vs.
Case Temperature per Junction
Fig. 4 - Typical Q1 - Q4 IGBT Collector to Emitter Voltage vs.
Junction Temperature
Fig. 5 - Typical Q1 - Q4 IGBT Transfer Characteristics
Fig. 6 - Typical Q1 - Q4 IGBT Gate Threshold Voltage
IC (A)
VCE (V)
0 1.5 3.01.0 2.50.5 2.0 3.5
0
93494_01
100
20
50
80
40
70
90
10
30
60
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
VGE = 15 V
IC (A)
VCE (V)
0 1.5 2.5 3.0 3.50.5 1.0 2.0 4.0
0
93494_02
100
10
60
40
20
80
50
30
90
70
VGE = 8 V
VGE = 10 V
VGE = 12 V
VGE = 15 V
VGE = 18 V
TJ = 125 °C
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
80604020 100
0
100
160
0
40
60
140
80
120
20
93494_03
DC
VCE (V)
TJ (°C)
10 16060 110
0.5
1.0
1.5
2.0
2.5
3.0
3.5
93494_04
4.0
100 A
50 A
27 A
VGE = 15 V
ICE (A)
VGE (V)
387456
0
93494_05
100
30
40
10
50
60
20
80
90
70
TJ = 25 °C
VCE = 20 V
TJ = 125 °C
Vgeth (V)
IC (mA)
01.00.20.1 0.3 0.5 0.7 0.90.4 0.6 0.8
2.0
2.5
3.0
3.5
4.0
93494_06
4.5
TJ = 25 °C
TJ = 125 °C
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Fig. 7 - Q1 - Q4 IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V, Rg = 22
Fig. 8 - Typical Q1 - Q4 IGBT Zero Gate Voltage Collector Current
Fig. 9 - Typical D5 - D6 Antiparallel Diode Forward Characteristics
Fig. 10 - Maximum DC D5 - D6 Antiparallel Diode
Forward Current vs. Case Temperature per Junction
Fig. 11 - Typical Q1 - Q4 IGBT Energy Loss vs. IC
(with Freewheeling D1 - D2 Clamping Diode)
VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 12 - Typical Q1 - Q4 IGBT Switching Time vs. IC
(with Freewheeling D1 - D2 Clamping Diode)
TJ = 125 °C, VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
IC (A)
VCE (V)
1 10 100 1000
0.01
0.1
1
93494_07
1000
10
100
ICES (mA)
VCES (V)
100 600200 300 400 500
0.0001
93494_08
1
0.1
0.01
0.001
125 °C
25 °C
I
F
(A)
V
FM
(V)
03.00.5 1.0 1.5 2.0 2.5
0
93494_09
100
40
30
80
20
60
90
70
10
50
TJ = 25 °C
TJ = 125 °C
Allowable Case Temperature (°C)
IF - Continuous Forward Current (A)
2515105353020 40 45 50
0
100
160
0
40
60
140
80
120
20
93494_10
DC
Energy (mJ)
IC (A)
10 20 50 7030 60 8040 90
0
93494_11
1.8
0.6
1.2
1.0
0.8
1.4
1.6
0.4
0.2 Eon
Eoff
Switching Time (ns)
IC (A)
10 20 30 806040 50 70 90
10
93494_12
1000
100
td(off)
td(on)
tf
tr
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Fig. 13 - Typical D5 - D6 Antiparallel Diode Reverse
Recovery Time vs. dIF/dt
VR = 200 V, IF = 30 A
Fig. 14 - Typical D5 - D6 Antiparallel Diode Reverse
Recovery Current vs. dIF/dt
VR = 200 V, IF = 30 A
Fig. 15 - Typical D5 - D6 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt
VR = 200 V, IF = 30 A
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (Q1 - Q4 IGBT)
trr (ns)
dIF/dt (A/μs)
100 200 300 400
93494_13
500
40
50
160
140
70
100
120
150
90
60
80
110
130 125 °C
25 °C
Irr (A)
dIF/dt (A/μs)
100 200 300 400
93494_14
500
1
21
7
13
3
9
17
15
11
19
5
125 °C
25 °C
Qrr (nC)
dIF/dt (A/μs)
100 200 300 400
93494_15
500
0
200
100
1100
1000
400
600
800
500
700
900
300
125 °C
25 °C
0.001
0.01
0.1
1
0.00001
93494_16
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
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Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (D5 - D6 Antiparallel Diode)
Fig. 18 - Typical Q2 - Q3 IGBT Output Characteristics
Fig. 19 - Typical Q2 - Q3 IGBT Output Characteristics
Fig. 20 - Maximum DC Q2 - Q3 IGBT Collector Current vs.
Case Temperature per Junction
Fig. 21 - Typical Q2 - Q3 IGBT Collector to Emitter Voltage vs.
Junction Temperature
0.001
0.01
10
0.1
1
0.00001
93494_17
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
IC (A)
VCE (V)
0 1.5 3.01.0 2.50.5 2.0 3.5
0
93494_18
100
20
50
80
40
70
90
10
30
60
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
VGE = 15 V
IC (A)
VCE (V)
0 1.5 2.5 3.0 3.50.5 1.0 2.0 4.0
0
93494_19
100
10
60
40
20
80
50
30
90
70
VGE = 9 V
VGE = 12 V
VGE = 15 V
VGE = 18 V
TJ = 125 °C
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
80604020 100
0
100
160
0
40
60
140
80
120
20
93494_20
DC
VCE (V)
TJ (°C)
10 16060 110
1.0
1.5
2.0
2.5
3.0
3.5
93494_21
4.0
100 A
50 A
27 A
VGE = 15 V
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Fig. 22 - Typical Q1 - Q4 IGBT Transfer Characteristics
Fig. 23 - Typical Q2 - Q3 IGBT Gate Threshold Voltage
Fig. 24 - Q2 - Q3 IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V, Rg = 22
Fig. 25 - Typical Q2 - Q3 IGBT Zero Gate Voltage Collector Current
Fig. 26 - Typical D3 - D4 Antiparallel Diode Forward Characteristics
Fig. 27 - Maximum DC D3 - D4 Antiparallel Diode
Forward Current vs. Case Temperature per Junction
ICE (A)
VGE (V)
498567
0
93494_22
100
30
40
10
50
60
20
80
90
70
VCE = 20 V
TJ = 25 °C
TJ = 125 °C
Vgeth (V)
IC (mA)
01.00.20.1 0.3 0.5 0.7 0.90.4 0.6 0.8
1.5
2.5
2.0
3.0
3.5
4.0
93494_23
5.5
4.5
5.0
TJ = 25 °C
TJ = 125 °C
IC (A)
VCE (V)
1 10 100 1000
0.01
0.1
1
93494_24
1000
10
100
ICES (mA)
VCES (V)
100 900200 300 400 500 600 700 800
0.0001
93494_25
10
1
0.1
0.01
0.001
125 °C
25 °C
I
F
(A)
V
FM
(V)
04.53.0 3.5 4.00.5 1.0 1.5 2.0 2.5
0
93494_26
100
40
30
80
20
60
90
70
10
50
TJ = 25 °C
TJ = 125 °C
Allowable Case Temperature (°C)
IF - Continuous Forward Current (A)
2515105353020 40 45 6050 55
0
100
160
0
40
60
140
80
120
20
93494_27
DC
VS-EMF050J60U
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Revision: 12-Jun-15 11 Document Number: 93494
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 28 - Typical Q2 - Q3 IGBT Energy Loss vs. IC
(with Freewheeling D2 - D3 AP Diode)
VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 29 - Typical Q2 - Q3 IGBT Switching Time vs. IC
(with Freewheeling D2 - D3 AP Diode)
TJ = 125 °C, VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 30 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Time vs. dIF/dt
VR = 400 V, IF = 50 A
Fig. 31 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Current vs. dIF/dt
VR = 400 V, IF = 50 A
Fig. 32 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt
VR = 400 V, IF = 50 A
Energy (mJ)
IC (A)
10 20 50 7030 60 8040 90
0.2
93494_28
4.2
1.4
2.6
2.2
1.8
3.0
3.4
3.8
1.0
0.6
Eon
Eoff
Switching Time (ns)
IC (A)
10 20 30 806040 50 70 90
10
93494_29
1000
100
td(off)
td(on)
tf
tr
trr (ns)
dIF/dt (A/μs)
100 200 300 400
93494_30
500
100
280
140
200
240
180
120
160
220
260
125 °C
25 °C
Irr (A)
dIF/dt (A/μs)
100 200 300 400
93494_31
500
4
32
16
28
8
20
24
12
125 °C
25 °C
Qrr (nC)
dIF/dt (A/μs)
100 200 300 400
93494_32
500
500
2500
1000
1500
2000
1250
1750
2250
750
125 °C
25 °C
VS-EMF050J60U
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Revision: 12-Jun-15 12 Document Number: 93494
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 33 - Maximum Thermal Impedance ZthJC Characteristics (Q2 - Q3 IGBT)
Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics (D3 - D4 Antiparallel Diode)
Fig. 35 - Typical D1 - D2 Clamping Diode Forward Characteristics Fig. 36 - Maximum DC D1 - D2 Clamping Diode
Forward Current vs. Case Temperature per Junction
0.001
0.01
0.1
1
0.00001
93494_33
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.01
10
0.1
1
0.00001
93494_34
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
I
F
(A)
V
FM
(V)
01.51.0 2.50.5 2.0 3.0
0
93494_35
100
20
50
80
40
70
90
10
30
60 TJ = 125 °C
TJ = 25 °C
Allowable Case Temperature (°C)
IF - Continuous Forward Current (A)
5030 60402010 70
0
100
160
0
40
60
140
80
120
20
93494_36
DC
VS-EMF050J60U
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Revision: 12-Jun-15 13 Document Number: 93494
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Fig. 37 - Typical D1 - D2 Clamping Diode
Reverse Leakage Current
Fig. 38 - Typical D1 - D2 Clamping Diode Reverse
Recovery Time vs. dIF/dt
VR = 200 V, IF = 30 A
Fig. 39 - Typical D1 - D2 Clamping Diode Reverse
Recovery Current vs. dIF/dt
VR = 200 V, IF = 30 A
Fig. 40 - Typical D1 - D2 Clamping Diode Reverse
Recovery Charge vs. dIF/dt
VR = 200 V, IF = 30 A
Fig. 41 - Maximum Thermal Impedance ZthJC Characteristics (D1 - D2 Clamping Diode)
IR (mA)
VR (V)
100 200 300 400 500 600
0.0001
0.001
0.01
0.1
1
10
93494_37
125 °C
25 °C
trr (ns)
dIF/dt (A/μs)
100 200 300 400
93494_38
500
40
160
80
140
120
60
100
125 °C
25 °C
Irr (A)
dIF/dt (A/μs)
100 200 300 400
93494_39
500
1
21
7
13
3
9
17
15
11
19
5
125 °C
25 °C
Qrr (nC)
dIF/dt (A/μs)
100 200 300 400
93494_40
500
0
1000
200
400
600
300
500
700
900
800
100
125 °C
25 °C
0.001
0.01
10
0.1
1
0.00001
93494_41
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
VS-EMF050J60U
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Revision: 12-Jun-15 14 Document Number: 93494
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
TYPICAL CONNECTION
Note
• Please refer to lead assignment for correct pin configuration. This diagram shows electrical connections only.
1- Vishay Semiconductors product
2- Package indicator (EM = EMIPAK2)
3- Circuit configuration (F = 3-levels half-bridge inverter stage)
4- Current rating (050 = 50 A)
5- Die technology (J = Warp2 IGBT)
6- Voltage rating (60 = 600 V)
7- U = Ultrafast
Device code
51 32 4 6 7
VS- EM F 050 J 60 U
VS-EMF050J60U
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Revision: 12-Jun-15 15 Document Number: 93494
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CIRCUIT CONFIGURATION
PACKAGE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95436
+ 400 V 17
35
MID
14
15
VMID
29
30
36
Q1
Q2
Q3
Q4
Th
D5
D3
D4
D6
D2
D1
- 400 V 26
27
Inv_Drv1 33
1
5
9
6
11
Inv_Drv2 8
4
Inv_Drv3
3
2
Inv_Drv3 23
24
33
11
5612
14 15
35
17
26 27
2324
3036
9
4
8
3
29
Document Number: 95436 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 27-Jan-11 1
EMIPAK2
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters
5.1
12.7
8.9 10.2
7.6 7.6
11.4
55 ± 0.3
15.2 14
58 ± 0.3
40.6
1.3
2.6
1.3
5.1
3.8
3.8
10.1
16.5
62 ± 0.3
53
23.8
23
41.5
Ø 5
Ø 2
Ø 4.3
Ø 1 ± 0.1
20.5 ± 1
17 ± 1
12
M4
Ø 0.4 6.4
16.8
145°
62 ± 0.3
39 ± 0.3
3 ref.
0.1
20.5 ± 1
24.1
20.3
16.5
12.7
8.9
2.5
6.3
11.4
20.3
24.1
13.3
12.1
9.59.5
5.7
7
3.2
1.9
7
10.8
15.9
1.9
5.7
8.3
12.1
15.9
Pins position
with tolerance
Front view
FF
Top view
Flat metal plate or
with optional M4 thread
Detail “A” Scale 10:1
Ceramic gap
Detail “A”
Side view
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
