GaAlAs Infrared Emitting Diodes VTE1063H TO-46 Flat Window Package -- 880 nm PACKAGE DIMENSIONS inch (mm) CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) -55C to 125C 200 mW 2.11 mW/C 100 mA 1.05 mA/C 3A -.8%/C 5.0V 10 A 880 nm 35 pF 260C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee VTE1063H 3.8 Half Power Beam Angle Radiant Intensity Total Power Test Current VF Ie PO IFT @ IFT Volts Typ. Max. 2.8 3.5 Condition mW/cm2 Min. Forward Drop distance Diameter mW/sr mW Typ. mm mm Min. Typ. mA (Pulsed) 5.0 36 6.4 49 80 1.0 1/2 Typ. 35 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 111 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto