111
GaAlAs Infrared Emitting Diodes
TO-4 6 F l at Window Pa ckage — 88 0 n m VTE1063H
PA CKAGE DIMENSIONS inch (mm)
CASE 24 TO-46 HERMETIC (Flat Window)
CHIP SIZE: .018" x .018"
DESCRIPTION
This wide beam angle TO-46 hermetic emitter contains a large area, double
wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher
current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise not ed)
Maximum Temperatures
Storage and Operating: - 55°C to 125°C
Continuous Power Dissipation: 200 mW
Derate above 30°C: 2.11 mW/°C
Maximum Continuous Current: 100 mA
Derate above 30°C: 1.05 mA/°C
Peak Forward Current, 10 µs, 100 pps: 3A
Temp. Coefficient o f Power Output (Typ.): - .8%/°C
Maximum Re verse Voltage: 5.0V
Maximum Re verse Current @ V
R
= 5V: 10 µA
Peak Wavelength (Typical): 880 nm
Junction Capacitance @ 0V, 1 MHz (Typ .): 35 pF
Response Time @ I
F
= 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260 °C
(1.6 mm from case , 5 seconds max.)
ELECTRO-OPT ICAL CHARACT ERISTICS @ 25°C (See also GaAlAs curves, pages 108- 110)
Refer to General Product Notes, page 2.
Part Number
Output Forward Drop Half Power Beam
Angle
Irradiance Radiant
Intensity Total Power Test
Current VF
EeCondition IePOIFT @ IFT θ1/2
mW/cm2distance Diameter mW/sr mW mA
(Pulsed) Volts Typ.
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE1063H 3.8 5.0 36 6.4 49 80 1.0 2.8 3.5 ±35°
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
