SIEMENS PNP Silicon Darlington Transistors @ For general AF applications @ High collector current @ High current gain @ Complementary types: BCV 29, BCV 49 (NPN) BCV 28 BCV 48 YPS05162 Type Marking Ordering Code Pin Configuration | Package (tape and reel) 1 2 3 4 BCV 28 ED Q62702-C1852 B Cc E | C | SOT-89 BCV 48 EE Q62702-C1854 Maximum Ratings Parameter Symbol | Values Unit BCV 28 BCV 48 Collector-emitter voltage Vero 30 60 Vv Collector-base voltage Veeo 40 80 Emitter-base voltage Vepo 10 10 Collector current Ie 500 mA Peak collector current Tem 800 Base current Ia 100 Peak base current Tem 200 Total power dissipation, Ts = 124C | Prot 1 WwW Junction temperature Ti 150 Cc Storage temperature range Taig -65...+ 150 Thermal Resistance Junction - ambient?) Rin sa <72 K/AW Junction - soldering point Russ <17 1) For detailed information see chapter Package Outlines. 2} Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 833 5.91SIEMENS BCV 28 BCV 48 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. DC characteristics Collector-emitter breakdown voltage Vieryceo Vv Ie=10mMA BCV 28 30 ~ - BCV 48 60 - - Collector-base breakdown voltage Vieryc8o Ie = 100 pA BCV 28 40 -~ - BCV 48 80 - - Emitter-base breakdown voltage, /e = 10 pA Vere | 10 - - Collector cutoff current Iceo Vee = 30 V BCV 28 - - 100 nA Vce = 60 V BCV 48 - - 100 nA Ves = 30 V, Ta = 150C BCV 28 ~ - 10 pA Ves = 60 V, Ta = 150C BCV 48 - - 10 pA Emitter cutoff current, Ves = 4 V Tepo - - 100 nA DC current gain hee - Ic = 100 yA, Vee=1V BCV 28 4000 |- ~ BCV 48 2000 |- - Ic= 10MA, Vor =5V BCV 28 10000 |} ~ BCV 48 4000 |- - Ic = 100 mA, Vee = 5 V BCV 28 20000 | - - BCV 48 10000 | - - Ic=0.5A, Voe=5V BCV 28 4000 |- - BCV 48 2000 |- _ Collector-emitter saturation voltage) Veksat - - 1 Vv Ic = 100 mA, Je = 0.1 mA Base-emitter saturation voltage) Veesat - ~ 1.5 Ic = 100 mA; Jp = 0.1 MA AC characteristics Transition frequency f - 200 - MHz Ic = 50 mA, Vce = 5 V, f= 20 MHz Output capacitance Cobo - 4.5 - pF Ves = 10 V, f= 1 MHz Y Putse test: 1s 300 ps, D= 2%. Semiconductor GroupSIEMENS Total power dissipation Pw = f (Ta"; Ts) * Package mounted on epoxy 1.2 48 EHPO0308 W Py 1.0 0.8 0.6 0.4 0.2 0 50 100 = C:150 7,5 7, Permissible pulse load Pri mex/Pta oc = f (tp) acv 28/48 EHPOO310 5 Ta at Prot Te ie Hult PT TE joy MOL tol OC 10? 5 10! ora oe Mi aa sai 5 il! at etre TT Ti CH ae TT Ue Bi ba I Ti TT Titi fi Tica 0 1078 107 107* 1073 Es s 10 +> |, Semiconductor Group BCV 28 BCV 48 Collector cutoff current [cso = f (Ta) Ves = Vee mex 104 BCV 26/48 EHPOO309 Togo nA 105 10? 10! 0 10"0 50 700 *C 150 ~ |, Transition frequency ft = f (/c) Vee = 5 V 108 ae EHPOO312 fo MH 10 10! 102 ma 10 |,SIEMENS BCV 28 BCV 48 Collector-emitter saturation voltage Base-emitter saturation voltage Ic = f (Vesa) Ic = f (Vatu) kre = 1000 hre = 1000 103 BCY 28/48 EHPOOS13 103 BCY 28/48 EMPOOS14 fg mA 10? 10! 0 "0 Q 0.5 10 v4.5 > Vetsot Collector-base capacitance Cczo = f (Veso) Emitter-base capacitance Ceso = f (Veno) Bev 28/48 EHPO0315 10 Cepo (ceo) Pe 0 107! 10 v ta! Vego (Yeap) Semiconductor Group Ip mA 10? 10! 0 100 1.0 20 v3.0 > Votsot DC current gain Are = f (/c) Vee=5V 108 BCv EHPOO316 5 104 107! mA 10 w I, 836