PMCM650CUNEZ - NEXPERIA - Datasheet.Live

PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Rev. 1.0 — 8 November 2017 Product data sheet

WLCS

1 Product profile

1.1 General description

N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6

bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

1.2 Features and benefits

•Common-drain type for bi-directional current flow

•Low threshold voltage

•Ultra small package: 0.98 × 1.48 × 0.35 mm

•Trench MOSFET technology

•ElectroStatic Discharge (ESD) protection > 2 kV HBM

1.3 Applications

•Loadswitch

•Battery Protection

•Battery Management

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VSS source-source voltage - - 20 V

VGS gate-source voltage

Tj = 25 °C

-8 - 8 V

ISsource current Tamb = 25 °C; VGS = 4.5 V; t ≤ 5 s [1] - - 5.3 A

Static characteristics

RSSon source-source on-state

resistance

VGS = 4.5 V; IS = 3 A; Tj = 25 °C - 40 52 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

2 / 18

2 Pinning information

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

A1 G1 gate 1

A2 S1 source 1

B1 S2 source 2

B2 S1 source 1

C1 S2 source 2

C2 G2 gate 2

Transparent top view

1 2

aaa-027241

G1 G2

3 Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMCM650CUNE WLCSP6 wafer level chip-size package; 6 bumps (3 x 2) WLCSP6_3-2

4 Marking

Table 4. Marking codes

Type number Marking code

PMCM650CUNE AH

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

3 / 18

5 Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VSS source-source voltage Tj = 25 °C - 20 V

VGS gate-source voltage Tj = 25 °C −8 8 V

Tamb = 25 °C; VGS = 4.5 V; t ≤ 5 s [1] - 5.3 A

Tamb = 25 °C; VGS = 4.5 V [1] - 4.1 A

ISsource current

Tamb = 100 °C; VGS = 4.5 V [1] - 2.6 A

ISM peak source current Tamb = 25 °C; single pulse;

tp ≤ 10 μs

- 16 A

Tamb = 25 °C [2] - 556 mW

Tamb = 25 °C [1] - 1300 mW

Ptot total power dissipation

Tsp = 25 °C - 12500 mW

Tjjunction temperature −55 150 °C

Tamb ambient temperature −55 150 °C

Tstg storage temperature −65 150 °C

Source-Forward diode

IFS source-forward current Tamb = 25 °C [1] - 1.2 A

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

4 / 18

Tj(°C)

- 75 17512525 75- 25

017aaa123

120

Pder

(%)

Figure 1. Normalized total power dissipation as a

function of junction temperature

Tj(°C)

- 75 17512525 75- 25

017aaa124

120

Ider

(%)

Figure 2. Normalized continuous source-source current

as a function of junction temperature

aaa-02754

VSS (V)

10-1 102

101

102

(A)

10-2

10-1

DC; Tsp = 25 °C

DC; Tamb = 25 °C; 6 cm2

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

Limit RSSon = VSS/IS

Figure 3. Safe operating area; junction to ambient; continuous and peak source currents as a function of source-

source voltage

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

5 / 18

6 Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1] - 180 225 K/W

[2] - 65 85 K/W

in free air

[3] - 75 95 K/W

Rth(j-a) thermal resistance from junction

to ambient

in free air; t ≤ 5 s [3] - 45 55 K/W

Rth(j-sp) thermal resistance from junction

to solder point

- 5 10 K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain, 4 layer, 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.

aaa-027259

tp (s)

10-3 103

102

10110-1

10-2

103

Zth(j-a)

(K/W)

102

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.25 0.33

0.5

0.75

FR4 PCB, standard footprint

Figure 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

6 / 18

aaa-027260

tp (s)

10-3 103

102

10110-1

10-2

102

Zth(j-a)

(K/W)

duty cycle = 1

0.02

0.75

0.5

0.33

0.25 0.2

0.1

0.05

0.01

FR4 PCB, mounting pad for drain 6 cm2

Figure 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

7 / 18

7 Characteristics

Table 7. Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristic

V(BR)SS source-source breakdown

voltage

IS = 250 μA; VGS = 0 V; 20 - - V

VGSth gate-source threshold voltage ID = 250 μA; VSS = VGS 0.4 0.7 0.9 V

ISSS source leakage current VGS = 0 V; VSS = 20 V - - 1 μA

VGS = 8 V; VSS = 0 V - - 10 μA

VGS = −8 V; VSS = 0 V - - −10 μA

VGS = 4.5 V; VSS = 0 V - - 1 μA

VGS = −4.5 V; VSS = 0 V - - −1 μA

VGS = 2.5 V; VSS = 0 V - - 200 nA

IGSS gate leakage current

VGS = −2.5 V; VSS = 0 V - - −200 nA

VGS = 4.5 V; IS = 3 A; Tj = 25 °C - 40 52 mΩ

VGS = 4.5 V; IS = 3 A; Tj = 150 °C - 55 71 mΩ

VGS = 2.5 V; IS = 2 A; Tj = 25 °C - 50 62 mΩ

RSSon source-source on-state

resistance

VGS = 1.8 V; IS = 1 A; Tj = 25 °C - 63 95 mΩ

gfs forward transconductance VGS = 4.5 V; IS = 3 A - 22 - S

RGgate resistance f = 1 MHz - 6.6 - Ω

Dynamic characteristics

QG(tot) total gate charge - 9 13 nC

QGS gate-source charge - 0.7 - nC

QGD gate-drain charge

VSS = 10 V; IS = 3 A; VGS = 4.5 V

- 2.9 - nC

Ciss input capacitance - 480 - pF

Coss output capacitance - 96 - pF

Crss reverse transfer capacitance

VSS = 10 V; f = 1 MHz; VGS = 0 V

- 96 - pF

td(on) turn-on delay time - 6 - ns

trrise time - 20 - ns

td(off) turn-off delay time - 39 - ns

tffall time

VSS = 10 V; IS = 3 A;

VGS = 4.5 V; RG(ext) = 6 Ω

- 15 - ns

Source-Foward diode

VFS source-forward voltage VG1S1 = 0 V ; VG2S2 = 4.5 V;

IS = 1.2 A

- 0.7 1.2 V

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

8 / 18

VSS (V)

0 431 2

aaa-027321

(A)

VGS = 1.2 V

1.4 V

1.5 V

1.8 V2.5 V4.5 V

Tj = 25 °C

Figure 6. Output characteristics: source current as a

function of source-source voltage; typical values

aaa-027322

VGS (V)

0 1.510.5

10-4

10-5

10-3

(A)

10-6

min typ max

VSS = 5 V; Tj = 25 °C

Figure 7. Sub-threshold source current as a function of

gate-source voltage

IS (A)

0 16124 8

aaa-027323

120

RSSon

100

VGS = 4.5 V

2.5 V

2.2 V

1.8 V1.6 V

1.5 V

Tj = 25 °C

Figure 8. Source-source on-state resistance as a

function of source current; typical values

VGS (V)

0 542 31

aaa-027325

100

150

200

RSSon

Tj = 150 °C

25 °C

IS = 3 A

Figure 9. Source-source on-state resistance as a

function of gate-source voltage; typical values

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

9 / 18

VGS (V)

0 21.50.5 1

aaa-027326

(A)

Tj = 25 °C150 °C

150 °C

Tj = 25 °C

VSS > IS x RSSon

Figure 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60 1801200 60

aaa-027327

0.8

0.4

1.2

1.6

Figure 11. Normalized source-source on-state resistance

as a function of junction temperature; typical values

Tj (°C)

-60 1801200 60

aaa-027329

0.5

1.5

VGS(th)

(V)

min

typ

max

IS = 250 μA; VSS = VGS

Figure 12. Gate-source threshold voltage as a function

of junction temperature

aaa-027627

VSS (V)

10-1 102

101

102

103

(pF)

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Figure 13. Input, output and reverse transfer

capacitances as a function of source-source voltage;

typical values

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

10 / 18

QG (nC)

0 1084 62

aaa-027330

VGS

(V)

VSS = 10 V; IS = 3 A; Tamb = 25 °C

Figure 14. Gate-source voltage as a function of gate

charge; typical values

aaa-027243

VGS

VGS(th)

QG1S2

VSS

QG(tot)

QG1S1

VGS(pl)

Figure 15. Common Drain MOSFET gate charge

definitions

VS1S2 (V)

0 1.20.80.4

aaa-027331

0.4

0.8

1.2

(A)

Tj= 25 °CTj= 150 °C

VG1S1 = 0 V; VG2S2 = 4.5 V

Figure 16. Source current as a function of source-source voltage; typical values

8 Test information

006aaa812

duty cycle δ =

Figure 17. Duty cycle definition

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

11 / 18

VSS/IS

VSS

IGSS

VGS

VGS(th)

VSS

RSSon

VGS VGS

QG(tot)

IG = 1 mA VGS = 0 V

aaa-027255

VFSS/IFSS

td(on), tr, td(off), tf

RG(ext)

VSS VSS

VG2S2

Figure 18. Test circuits

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

12 / 18

9 Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

WLCSP6_3-2

wlcsp6_3-2_po

Unit

max

nom

min

0.375 0.215 0.275 1.51 1.01

0.15 0.05

Dimensions (mm are the original dimensions)

WLCSP6: wafer level chip-size package; 6 bumps (3 x 2) WLCSP6_3-2

A1A2

0.160

b D E e1e2

0.50

v w y

0.050.345 0.200 0.260 1.48 0.98 1.00

0.500.145

0.315 0.185 0.245 1.45 0.950.130

0 1 mm

scale

detail X

ball A1

index area

A CB

bAC B

ball A1

index area

17-04-26

17-05-03

Note

Device back is metal coated on Drain potential.

Figure 19. Package outline WLCSP6_3-2

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

13 / 18

10 Soldering

Footprint information for reflow soldering WLCSP6_3-2

wlcsp6_3-2_fr

solder resist

occupied area

solder paste = solderland

Dimensions in mm

0.35

0.15

1.7

0.5

0.5 1.20.25

0.25

Reflow soldering is the only recommended soldering method.

Dimensions in mm.

Figure 20. Reflow soldering footprint WLCSP6

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

14 / 18

11 Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMCM650CUNE v.1 20171108 Product data sheet - -

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

15 / 18

12 Legal information

12.1 Data sheet status

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product

development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple

devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the short data sheet,

the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be

valid in which the Nexperia product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no responsibility

for the content in this document if provided by an information source outside

of Nexperia. In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory. Notwithstanding any damages that

customer might incur for any reason whatsoever, Nexperia's aggregate and

cumulative liability towards customer for the products described herein shall

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Right to make changes — Nexperia reserves the right to make changes

to information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Suitability for use — Nexperia products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction

of an Nexperia product can reasonably be expected to result in personal

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification. Customers are responsible for the

design and operation of their applications and products using Nexperia

products, and Nexperia accepts no liability for any assistance with

applications or customer product design. It is customer’s sole responsibility

to determine whether the Nexperia product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products. Nexperia does not accept

any liability related to any default, damage, costs or problem which is based

on any weakness or default in the customer’s applications or products, or

the application or use by customer’s third party customer(s). Customer is

responsible for doing all necessary testing for the customer’s applications

and products using Nexperia products in order to avoid a default of the

applications and the products or of the application or use by customer’s third

party customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia products are

sold subject to the general terms and conditions of commercial sale, as

published at http://www.nexperia.com/profile/terms, unless otherwise agreed

in a valid written individual agreement. In case an individual agreement is

concluded only the terms and conditions of the respective agreement shall

apply. Nexperia hereby expressly objects to applying the customer’s general

terms and conditions with regard to the purchase of Nexperia products by

customer.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or

the grant, conveyance or implication of any license under any copyrights,

patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

16 / 18

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified, the

product is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications. In the event that customer

uses the product for design-in and use in automotive applications to

automotive specifications and standards, customer (a) shall use the product

without Nexperia's warranty of the product for such automotive applications,

use and specifications, and (b) whenever customer uses the product for

automotive applications beyond Nexperia's specifications such use shall be

solely at customer’s own risk, and (c) customer fully indemnifies Nexperia

for any liability, damages or failed product claims resulting from customer

design and use of the product for automotive applications beyond Nexperia's

standard warranty and Nexperia's product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

12.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Product data sheet Rev. 1.0 — 8 November 2017

17 / 18

Tables

Tab. 1. Quick reference data .........................................1

Tab. 2. Pinning ...............................................................2

Tab. 3. Ordering information ..........................................2

Tab. 4. Marking codes ...................................................2

Tab. 5. Limiting values .................................................. 3

Tab. 6. Thermal characteristics ..................................... 5

Tab. 7. Characteristics ...................................................7

Tab. 8. Revision history ...............................................14

Figures

Fig. 1. Normalized total power dissipation as a

function of junction temperature ........................4

Fig. 2. Normalized continuous source-source

current as a function of junction temperature .... 4

Fig. 3. Safe operating area; junction to ambient;

continuous and peak source currents as a

function of source-source voltage ..................... 4

Fig. 4. Transient thermal impedance from junction

to ambient as a function of pulse duration;

typical values .....................................................5

Fig. 5. Transient thermal impedance from junction

to ambient as a function of pulse duration;

typical values .....................................................6

Fig. 6. Output characteristics: source current as a

function of source-source voltage; typical

values ................................................................ 8

Fig. 7. Sub-threshold source current as a function

of gate-source voltage ...................................... 8

Fig. 8. Source-source on-state resistance as a

function of source current; typical values .......... 8

Fig. 9. Source-source on-state resistance as a

function of gate-source voltage; typical

values ................................................................ 8

Fig. 10. Transfer characteristics: drain current as

a function of gate-source voltage; typical

values ................................................................ 9

Fig. 11. Normalized source-source on-state

resistance as a function of junction

temperature; typical values ............................... 9

Fig. 12. Gate-source threshold voltage as a function

of junction temperature ..................................... 9

Fig. 13. Input, output and reverse transfer

capacitances as a function of source-source

voltage; typical values ....................................... 9

Fig. 14. Gate-source voltage as a function of gate

charge; typical values ......................................10

Fig. 15. Common Drain MOSFET gate charge

definitions ........................................................ 10

Fig. 16. Source current as a function of source-

source voltage; typical values ......................... 10

Fig. 17. Duty cycle definition ........................................ 10

Fig. 18. Test circuits ..................................................... 11

Fig. 19. Package outline WLCSP6_3-2 ........................12

Fig. 20. Reflow soldering footprint WLCSP6 ................ 13

Nexperia PMCM650CUNE

20 V, Common Drain N-channel Trench MOSFET

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section 'Legal information'.

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 8 November 2017

Document identifier: PMCM650CUNE v.1

Contents

1 Product profile .................................................... 1

1.1 General description ............................................1

1.2 Features and benefits ........................................1

1.3 Applications ........................................................1

1.4 Quick reference data ......................................... 1

2 Pinning information ............................................ 2

3 Ordering information .......................................... 2

4 Marking .................................................................2

5 Limiting values ....................................................3

6 Thermal characteristics ......................................5

7 Characteristics .................................................... 7

8 Test information ................................................ 10

9 Package outline .................................................12

10 Soldering ............................................................13

11 Revision history ................................................ 14

12 Legal information .............................................. 15