MITSUBISHI Nch POWER MOSFET FS10VS-9 HIGH-SPEED SWITCHING USE | cities ne sn thirteen Ee A EEE IL _ FS10VS-9 OUTLINE DRAWING Dimensions in mm | ; I OMAK. oy x je os , | = 13 : : 6 mapa \ \ | = | 7 | : ae 073 L <i ye f 12 OS | 4 | 4 rH ; ot ws GATE 2: DRAIN G) SOURCE a> DRAIN t @VDSS cree rece c een errr e ener e nares reste e ees 450V } @rbs (ON) (MAX) creteeerteser et ese recess snere ness 0 73Q OLD cece eee ee teeter teense ner ee tenets scenes 410A 70-2208 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Te = 25C) Parameter Conditions Ybss Drain-source Vass +30 ID Drain current 10 IDM Drain current 30 Po Maximum. 125 Tech Channet 55 ~ +150 T ~55 ~ +150 1.2 2-182 he MisyssH ELECTRICMITSUBISHI Nch POWER MOSFET FS10VS-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (ich = 25C) Symbol Parameter Test conditions ~ Limits Unit Min. Typ. Max. V (9h) 08s | Drain-source breakdown voltage | ID = 1mA, VGS = OV 450 _ v V (8A) Gss | Gate-source breakdown voltage | IG = +100uA, Vos = OV +30 ~ Vv lass Gate leakage current Vas = +25V, Vos = OV _ _ +10 LA loss Drain current Vbs = 450V, Vas = OV ~ 1 mA VGS (th) | Gate-source threshold voltage ID = mA, VDs = 10V 2 3 4 Vv TDS (ON) Drain-source on-state resistance | ID = 5A, VGS = 10V _ 0.56 0.73 Q VbS (ON) | Drain-source on-state voltage | ID = 5A, VGS = 10V _ 2.8 3.7 Vv yts | Forward transfer admittance _| ID = 5A, Vos = 10V 3.3 55 _ s Ciss input capacitance | 1100 pF Coss Output capacitance Vos = 25V, VGS = OV, f = 1MHz ~ 135 pF Crss Reverse transfer capacitance ~ 20 _ pF td (on) Turn-on delay time _ 20 _ ns t i i _ : Rise time __ Vo = 200V, ID = 5A, Vas = 10V, RGEN = Res = 500 20 os td (off) Turn-off delay time _ 95 _ ns t Fall time ~ 35 _ ns Vsp Source-drain voltage Is = 5A, VGS = OV _ 1.5 2.0 Vv Rim (ch-c)_| Thermal resistance Channel to case _ _ 1.0 CW PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 5 ~ 3 = 2 tw=10us a 160 = & 2 10 7 z 5 Q 120 5 3 & i < we 2 a a , 5) 1 80 3 ; QO z 5 a =< wi 3 = 49 Fal tes asc o i Pulse a 10 0 5 - 0 50 100 150 200 23 5710'23 5710? 3 57108 2 CASE TEMPERATURE Te (C) DRAIN-SOURCE VOLTAGE Vos (V} QUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 20 VGsS = 20V iPp= ap ey VGS=20V BV] % 125W } 10V z % To = 25C = BV = Pulse Test = x 2 2 6V ~ 5 2 abate 5 Pp = i25w Wi i : va fa 5 Ss 3 8 3G 5V 2 Z < < ; x i a 4 a : To = 26C Puise Test 0 i) 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE vVops (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 183 ELECTRICDRAIN-SOURCE ON-STATE CAPACITANCE Ciss, Coss, Crss (pF) VOLTAGE ps (ON) (V) DRAIN CURRENT ID (A) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Tc = 25 Test we EG gs 58 3 ES 5 Zz De zZ2 a 5A a % 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) Tc = 25C Vos = 50V ulse Test in @ Ls Qs g EO az ef 53 Pe % 4 8 72 16 20 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Ciss 103 7 _ 8 3 Ww 2 2 i 102 7 Z 5 = 5 3 E 2 = n Toh = 25C f= IMHz 5 = 23 571 101 7 23 5710123 5710223 DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI Nch POWER MOSFET FS10VS-9 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) Te = 28C T VGS = 10V 20V 0 107? 23 57100923 57101 23 57102 DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 10) Vos = 10V Pulse Test r NO os 7 5 3 2 1071 107 23 5710 23 57101 DRAIN CURRENT ip (A) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 ch = 25C VpD = 200V 5 VGS = 10V RGEN = RGS = 3 2 102 5 5 3 2 10! 1-1 23 57100 23 5710 DRAIN CURRENT [0 (A) 2 - 184 ate MITSUBISHI ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE Vr (pss) (tC) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE Var (DS8) (25C) NG an 10-71 04 0 20 40 60 80 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Teh = 25C lo = 10A = 100V 100 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = OV ip = 1/210 Pulse Test ~50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGsS = OV jo=1mA -50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE 21h (ch-c) (C/W) o = NO aS NO GIN 10- NO OM VOLTAGE VGs (th) (V) SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD QoQ oO ii MITSUBISHI Nch POWER MOSFET FS10VS-9 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGS = OV Pulse Test 32 24 0 0 0.8 1.6 24 32 40 SOURCE-DRAIN VOLTAGE Vso (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 Vos = 10V ID= IMA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Teh (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS i _; TW Dae 0.05 0.02 wer 0-2 10423 5710323 5710223 5710123 5709 23 5710! 23 5710? PULSE WIDTH tw (s) MITSUBISHI 2 - 185 ELECTRIC