DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes (APDs) for range finding and laser meters - plastic and leadless ceramic carrier packages Excelitas' C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications, providing high responsivity in the 500 - 1000 nm range. The Excelitas C30737 series silicon avalanche photodiodes (APDs) provide high responsivity between 500 nm and 1000 nm, as well as extremely fast rise times at all wavelengths with a frequency response up to >1 GHz. Standard versions of these APDs are available in two active area sizes: 0.23 mm and 0.5 mm diameter. They are offered in plastic through-hole T1-3/4 (C30737PH) and leadless ceramic-carrier (LCC) surface mount (C30737LH) packages. The LCC package comes with clear glass or built-in 635 nm, 650 nm, or 905 nm filter window options. These package varieties are ideally suitable for high volume, cost-effective applications where a high gain APD is required. The leadless, ceramic-carrier (LCC) SMD package parts (C30737LH series) are available in tape-and-reel pack for high volume shipments. Customizations of these APDs are offered to meet your design challenges. Options for these APDs include breakdown voltage selection (binning). Key Features Applications www.excelitas.com Page 1 of 11 High gain at low bias voltage Low breakdown voltage Fast response, tR ~ 300 ps Low noise ~ 0.2pA/ Hz Surface mount - tape and reel Optimized versions for 900 and 800 nm sensitivity Two standard diameters: 230 m and 500 m Built-in filter windows RoHS compliant 905 nm range finding devices 635 nm and 650 nm laser meters Speed guns Area scanners for safety, surveillance, and automatic door openers Optical communication C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages Table 1. Electrical Characteristics at TA = 22 C; at operating voltage-Vop - unfiltered devices C30737PH-230-80 C30737LH-230-80 Parameter Min Active Area Diameter Peak Sensitivity Wavelength Breakdown Voltage, VBR Typical C30737PH-500-80 C30737LH-500-80 Max Min 230 800 120 Typical Max Unit 200 m nm V 500 800 200 120 Temperature Coefficient of VR, for Constant M - 0.5 - - 0.5 - V/C Gain (M) @ 800nm Responsivity @ 800 nm Total Dark Current, Id Noise Current, in, f=10kHz, f=1.0Hz Capacitance, Cd - 100 50 2.5 0.1 1 10 - - 100 50 5 0.3 2 20 - A/W nA pA/Hz pF Rise + Fall Time, RL=50 , 10%-90%-10% points - 0.22 - - 0.30 - ns +100 +60 -40 -20 +100 +60 GHz C C Cut-off frequency (-3 dB) Storage Temperature Operating Temperature 1.6 -40 -20 C30737PH-230-90 C30737LH-230-90 Parameter Min Active Area Diameter Peak Sensitivity Wavelength Breakdown Voltage, VBR 1.2 Typical C30737PH-500-90 C30737LH-500-90 Max 230 900 180 Temperature Coefficient of VR, for Constant M 260 100 60 2.5 0.2 0.6 10 - Rise & Fall Time, RL=50 , 10%-90%-10% points - 0.5 - 55 - 700 Unit 260 m nm V V/C 100 60 5 0.4 1 20 - A/W nA pA/Hz pF 0.6 - ns +100 +60 MHz C C 580 +100 +60 Page 2 of 11 Max 1.3 55 - www.excelitas.com 180 1.3 -40 -20 Typical 500 900 Gain (M) @ 900 nm Responsivity @ 900 nm Total Dark Current, Id Noise Current, in, f=10kHz, f=1.0Hz Capacitance, Cd Cut-off frequency (-3 dB) Storage Temperature Operating Temperature Min -40 -20 C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages Table 2. Electrical Characteristics at TA = 22 C; at operating voltage-Vop - devices with optical bandpass filters C30737LH-230-81 (635 nm filter #1) Parameter Min Active Area Diameter Peak Sensitivity Wavelength Breakdown Voltage, VBR Temperature Coefficient of VR, for Constant M Gain (M) @ 635 nm Responsivity @ 635 nm Total Dark Current, Id Noise Current, in, f=10kHz, f=1.0Hz Capacitance, Cd Rise & Fall Time, RL=50 , 10%-90%-10% points Cut-off frequency (-3 dB) Storage Temperature Operating Temperature 120 Cut-off frequency (-3 dB) Storage Temperature Operating Temperature www.excelitas.com Min Typical Max Unit 200 m nm V 500 635 200 120 - 0.5 - - 0.5 - V/C - 100 35 2.5 0.1 1 10 - - 100 35 5 0.3 2 20 - A/W nA pA/Hz pF - 0.22 - - 0.30 - ns +100 +60 GHz C C 1.6 -40 -20 1.2 +100 +60 -40 -20 C30737LH-230-91 (905 nm filter #2) Min Rise & Fall Time, RL=50 , 10%-90%-10% points Max 230 635 Parameter Active Area Diameter Peak Sensitivity Wavelength Breakdown Voltage, VBR Temperature Coefficient of VR, for Constant M Gain (M) @ 900nm Responsivity @ 900 nm Total Dark Current, Id Noise Current, in, f=10kHz, f=1.0Hz Capacitance, Cd Typical C30737LH-500-81 (635 nm filter #1) Typical C30737LH-500-92 (905 nm filter #2) Max Min 230 905 180 180 1.3 55 - 100 60 2.5 0.2 0.6 10 - - 0.5 - 55 - 700 Unit 260 m nm V 1.3 V/C 100 60 5 0.4 1 20 - A/W nA pA/Hz pF 0.6 - ns +100 +60 MHz C C 580 +100 +60 Page 3 of 11 Max 500 905 260 -40 -20 Typical -40 -20 C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages C30737LH-230-83 (650 nm filter #3) Parameter Min Active Area Diameter Peak Sensitivity Wavelength Breakdown Voltage, VBR Max Min Typical 230 650 Max Unit 200 m nm V 500 650 120 Temperature Coefficient of VR, for Constant M Gain (M) @ 650 nm Responsivity @ 650 nm Total Dark Current, Id Noise Current, in, f=10kHz, f=1.0Hz Capacitance, Cd Rise & Fall Time, RL=50 , 10%-90%-10% points Cut-off frequency (-3 dB) Storage Temperature Operating Temperature Typical C30737LH-500-83 (650 nm filter #3) 200 120 - 0.5 - - 0.5 - V/C - 100 35 2.5 0.1 1 10 - - 100 35 5 0.3 2 20 - A/W nA pA/Hz pF - 0.22 - - 0.30 - ns +100 +60 -40 -20 +100 +60 GHz C C 1.6 1.2 -40 -20 Table 3. Filter Transmission Characteristics Filter # 1 2 note 1 note 2 note 3 Transmission 85% 638...669 nm Transmission 85% Nominal center wavelength 635 nm Transmission window 623...652 nm 50% cut-on wavelength 606...617 nm 870...890 nm 622...634 nm 50% cut-off wavelength 657...669 nm 929...949 nm 673...685 nm Average transmission from 300 nm to bandpass region <1% @ <593 nm <1% @ <850 nm <1% @ <608 nm Average transmission from bandpass region to 1100 nm <1% @ >682 nm <1% @ >979 nm <1% @ >699 nm <+0.5 nm/C <+0.5 nm/C <+0.5 nm/C for range -10C...+50C 0.3 mm 0.3 mm 0.3 mm Material: Borosilicate glass Wavelength drift Typical filter thickness 905 nm 3 650 nm Notes: 1. 2. 3. The 635 nm filter is designed to work optimally with the 635 nm red laser commonly used in laser meters or laser pointers. The 905 nm filter is designed to work optimally with the Excelitas 950 nm Pulse Laser Diodes PGEW and PGA series. The 650 nm filter is designed to work optimally with the 650 nm red laser commonly used in laser meters or laser pointers. www.excelitas.com Page 4 of 11 C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages Spectral Response Responsivity (A/W) 70 800nm PSW 60 Figure 1 900nm PSW Typical Responsivity vs. wavelength. 50 800 nm PSW = APD with 800 nm peak sensitivity wavelength 40 30 900 nm PSW = APD with 900 nm peak sensitivity wavelength 20 10 0 Wavelength (nm) Capacitance vs. Bias Voltage 100 Figure 2 Typical capacitance vs. bias voltage 230um Active, 800nm PSW 500um Active, 800nm PSW Capacitance (pF) 10 230um Active, 900nm PSW 500um Active, 900nm PSW 1 0.1 0 20 40 60 80 100 120 140 Bias voltage (V) Spectral Response for 635nm Filtered Devices 40 Figure 3 Typical response vs. wavelength for a 635 nm filtered APD - here C30737LH-500-81 Responsivity (A/W) 35 30 25 20 15 10 5 0 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) www.excelitas.com Page 5 of 11 C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages Figure 4 Spectral Response for 905nm Filtered Devices 70 Typical response vs. wavelength for a 905 nm filtered APD - here C30737LH-500-92 Responsivity (A/W) 60 50 40 30 20 10 0 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) Gain Curve 1000 Figure 5 Typical gain vs. bias voltage for 800 nm peak sensitivity wavelength types 800nm PSW Gain 100 10 1 50 70 90 110 130 150 Bias voltage (V) Gain curve Figure 6 1000 Typical gain vs. bias voltage for 900 nm peak sensitivity wavelength types 900nm PSW Gain 100 10 1 60 120 180 240 300 Bias voltage (V) www.excelitas.com Page 6 of 11 C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages Figure 7 Plastic T 1 3/4 through-hole package. Dimensions in mm [inches]. Figure 8 Leadless ceramic carrier (LCC) package. Dimensions in mm [inches] www.excelitas.com Page 7 of 11 C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages Table 4. Ordering Guide Epitaxial structure Si APD Plastic TO-18 can (P-package) 2 Leadless ceramic carrier (3 x 3 mm LCC) Active area diameter = 230 m Active area diameter = 500 m Optimum chip response @ 800 nm Optimum chip response @ 900 nm No filter With 635 nm filter With 905 nm filter With 650 nm filter Vbd = 120 - 150 V Vbd = 150 - 180 V Vbd = 180 - 210 V Vbd = 210 - 260 V Vbd = whole Vbd range (no Vbd binning) C30737 C30737 AA - BBB - C (1) D (2)(3) E PH LH 230 500 8 9 0 1 2 3 A B C D N (1) Filter option is only available for the LCC (LH) package option. (2) Vbd binning /screening is available in these options: A, B and C are available for APD with optimum response @ 800 nm C and D are available for APD with optimum response @ 900 nm N is available for all types (3) For binning please allow 2 V overlap between bins for the 800 nm versions and 5 V for the 900 nm versions. Example: C30737LH-230-92C: A C30737 in the 3 x 3 mm ceramic carrier package, with optimum 900 nm response wavelength, with 905 nm filter and selected for Vbd of 180V - 210V. Tape-and-Reel Shipping Pack Option All the C30737LH (leadless ceramic carrier SMD package) series are offered in the tape-and-reel shipping pack option for quantities of 3000 units per reel; as shown in Figure 9 and 10. This packing option should be indicated at the time of order placement. www.excelitas.com Page 8 of 11 C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages Figure 9 Tape-and-reel packing specification www.excelitas.com Page 9 of 11 C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages Figure 10 Tape-and-reel device carrier specification www.excelitas.com Page 10 of 11 C30737PH-LH-Rev.2011-09 C30737PH and C30737LH Series Epitaxial Silicon Avalanche Photodiodes - Plastic and Leadless ceramic carrier packages RoHS Compliance This series of APDs are designed and built to be fully compliant with the European Union Directive 2002/95EEC - Restriction of the use of certain Hazardous Substances in Electrical and Electronic equipment. Warranty A standard 12-month warranty following shipment applies. About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of OEM customers. From analytical instrumentation to clinical diagnostics, medical, industrial, safety and security, and aerospace and defense applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-markets. Excelitas Technologies has approximately 3,000 employees in North America, Europe and Asia, serving customers across the world. Excelitas Technologies 22001 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+1) 450.424.3300 Toll-free: (+1) 800.775.6786 Fax: (+1) 450.424.3345 detection@excelitas.com Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 31 D-65199 Wiesbaden Germany Telephone: (+49) 611 492 430 Fax: (+49) 611 492 165 detection.europe@excelitas.com Excelitas Technologies 47 Ayer Rajah Crescent #06-12 Singapore 139947 Telephone: (+65) 6775-2022 Fax: (+65) 6775-1008 For a complete listing of our global offices, visit www.excelitas.com/ContactUs (c) 2011 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. www.excelitas.com Page 11 of 11 C30737PH-LH-Rev.2011-09