LTC4376 7A Ideal Diode with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode nn Wide Operating Voltage Range: 4V to 40V nn Internal 15m N-Channel MOSFET nn Reverse Input Protection to -40V nn Low 9A Shutdown Current nn Low 150A Operating Current nn Smooth Switchover without Oscillation nn Available in 16-Pin 5mm x 4mm DFN Package nn AEC-Q100 Qualified for Automotive Applications The LTC(R)4376 is a 7A ideal diode that uses an internal 15m N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4376 reduces power consumption, heat dissipation and PC board area. nn APPLICATIONS The LTC4376 controls the forward voltage drop across the internal MOSFET to ensure smooth current delivery without oscillation even at light loads. If a power source fails or is shorted, a fast turn-off minimizes reverse current transients. The LTC4376 also easily ORs power sources to increase total system reliability. With its low operating voltage, small solution size and the ability to withstand reverse input voltage, the LTC4376 excels in portable battery applications. A shutdown mode is available to reduce the quiescent current to 9A. The SHDN pin can also control the forward current path when an external MOSFET is used in series with the internal MOSFET in a back-to-back configuration. Automotive Battery Protection nn Redundant Power Supplies nn Portable Battery Devices nn Computer Systems/Servers nn All registered trademarks and trademarks are the property of their respective owners. TYPICAL APPLICATION Power Dissipation vs Load Current 12V, 7A Ideal Diode 4 VIN 12V OUT IN CS INK OUTK SHDN VSS VOUT 12V 7A POWER DISSIPATION (W) LTC4376 3 SCHOTTKY MBR1045CT 2 POWER SAVED 1 4376 TA01a LTC4376 0 0 1 2 3 4 CURRENT (A) 5 6 7 4376 TA01b Rev. A Document Feedback For more information www.analog.com 1 LTC4376 ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION (Notes 1, 2) TOP VIEW IN, INK, CS, SHDN....................................... -40V to 80V OUT, OUTK.................................................. -0.3V to 80V INK-OUTK.................................................. -45V to 100V INK-CS...........................................................-1V to 80V IN-OUT (Note 3)......................................... -45V to 0.3V GATE (Note 4)............................ VCS - 0.3V to VCS + 10V Operating Junction Temperature Range LTC4376C................................................. 0C to 70C LTC4376I..............................................-40C to 85C LTC4376H........................................... -40C to 125C Storage Temperature Range................... -65C to 150C IN 1 16 IN IN 2 15 IN IN 3 14 IN IN 4 NC 5 VSS 6 11 NC OUTK 7 10 INK GATE 8 9 17 OUT 13 IN 12 SHDN CS DHD PACKAGE 16-LEAD (5mm x 4mm) PLASTIC DFN TJMAX = 150C, JA = 43C/W, JC = 4.3C/W MSL RATING 3 ORDER INFORMATION TUBE TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LTC4376CDHD#PBF LTC4376CDHD#TRPBF 4376 16-Lead (5mm x 4mm) Plastic DFN 0C to 70C LTC4376IDHD#PBF LTC4376IDHD#TRPBF 4376 16-Lead (5mm x 4mm) Plastic DFN -40C to 85C LTC4376HDHD#PBF LTC4376HDHD#TRPBF 4376 16-Lead (5mm x 4mm) Plastic DFN -40C to 125C LTC4376IDHD#WPBF LTC4376IDHD#WTRPBF 4376 16-Lead (5mm x 4mm) Plastic DFN -40C to 85C LTC4376HDHD#WPBF LTC4376HDHD#WTRPBF 4376 16-Lead (5mm x 4mm) Plastic DFN -40C to 125C AUTOMOTIVE PRODUCTS** Contact the factory for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container. Tape and reel specifications. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix. **Versions of this part are available with controlled manufacturing to support the quality and reliability requirements of automotive applications. These models are designated with a #W suffix. Only the automotive grade products shown are available for use in automotive applications. Contact your local Analog Devices account representative for specific product ordering information and to obtain the specific Automotive Reliability reports for thesemodels. 2 Rev. A For more information www.analog.com LTC4376 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VINK = 4V to 40V, VIN = VINK, unless otherwise noted. SYMBOL PARAMETER VINK Operating Supply Range IINK INK Pin Current INK = 12V INK = OUTK = 12V, SHDN = 0V INK = OUTK = 24V, SHDN = 0V INK = -40V l l l l IOUTK OUTK Pin Current INK = 12V, In Regulation INK = 12V, VSD = -1V INK = OUTK = 12V, SHDN = 0V INK = OUTK = 24V, SHDN = 0V OUTK = 12V, INK = SHDN = 0V l l l l l ICS CS Pin Current INK = 12V, VSD = -1V INK = CS = 12V, SHDN = 0V CS = -40V l l l IOUT OUT Reverse Leakage Current IN = GATE = 0V, OUT = 40V l VGATE Gate Drive (VGATE - VCS) INK = 4V, IGATE = 0, -1A INK = 8V to 40V, IGATE = 0, -1A l l VSD(REG) Source-Drain Regulation Voltage (VINK - VOUTK) 1mA < IIN < 100mA l VSD(FWD) Body Diode Forward Voltage Drop (VIN - VOUT) IIN = 7A, MOSFET Off l RDS(ON) Internal N-Channel MOSFET On Resistance IIN = 7A l IAS Peak Avalanche Current L = 0.1mH (Note 5) IGATE(UP) Gate Pull-Up Current GATE = INK, VSD = 0.1V l -6 -10 -17 A Fault Condition, VGATE = 5V, VSD = -1V Shutdown Mode, VGATE = 5V, VSD = 0.7V l l 70 0.6 130 180 mA mA IGATE(DOWN) Gate Pull-Down Current CONDITIONS MIN l TYP MAX 40 V 150 9 15 -15 250 30 40 -40 A A A A 5 120 0.8 0.8 6 7.5 220 3 3 15 A A A A A 1 -0.4 150 4 -0.8 200 15 -1.5 A A mA 150 A 4.5 10 5.5 12 18 18 V V 20 30 45 mV 0.55 0.77 1 V 15 30 m 4 0 3 UNITS 40 A tOFF Gate Turn-Off Delay Time VSD = 0.1V to -1V, VGATE < 2V l 0.3 0.5 s VSHDN(TH) SHDN Pin Input Threshold INK = 4V to 40V l 0.6 1.2 2 V VSHDN(FLT) SHDN Pin Float Voltage INK = 4V to 40V l 0.6 1.75 2.5 V ISHDN SHDN Pin Current SHDN = 0.5V SHDN = -40V l l -0.5 -0.4 -3 -0.8 -5 -1.5 A mA 1 A -0.9 -1.8 -2.7 V ILEAK SHDN Leakage Current SHDN = 2.6V l VCS(TH) Reverse CS Threshold for GATE Off GATE = 0V, IGATE(DOWN) = 1mA l Note 1: Stresses beyond those listed underAbsolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: All currents into pins are positive, all voltages are referenced to VSS unless otherwise specified. Note 3: This voltage is set by the MOSFET's body diode and will safely exceed 0.3V during start-up for a limited time determined by the body diode thermal dissipation. Note 4: An internal clamp limits the GATE pin to a minimum of 10V above CS or 90V above VSS. Driving this pin to voltages beyond the clamp may damage the device. Note 5: The IAS typical value is based on characterization and is not production tested. Rev. A For more information www.analog.com 3 LTC4376 TYPICAL PERFORMANCE CHARACTERISTICS INK Current in Shutdown 150 30 100 50 10 0 10 20 VINK (V) 30 0 40 200 10 20 VINK (V) 160 30 50 -0.5 0 VSD (V) 0 40 0.5 1 4376 G04 -1 -0.5 0 0 10 20 VCS (V) 30 40 4376 G03 Total Negative Current vs Negative Input Voltage -2.0 80 0 TA = 125C TA = 85C TA = 25C TA = -40C 4376 G02 40 0 -1 4 2 VINK = 40V VINK = 12V VINK = 4V 120 100 4 0 6 OUTK Current vs Forward Voltage Drop IOUTK (A) ICS (A) 150 TA = 125C TA = 85C TA = 25C TA = -40C 4376 G01 VCS = 40V VCS = 12V VCS = 4V INK = CS = OUTK SHDN = 0V 8 20 CS Current vs Forward Voltage Drop -50 INK = CS = OUTK SHDN = 0V IINK + ICS + ISHDN (mA) 0 CS Current in Shutdown 10 ICS (A) 40 IINK (A) IINK (A) INK Current in Regulation 200 0.5 VSD (V) 1 4376 G05 INK = CS = SHDN -1.5 -1.0 -0.5 0 0 -10 -20 VOLTAGE (V) -30 -40 4376 G06 Rev. A For more information www.analog.com LTC4376 TYPICAL PERFORMANCE CHARACTERISTICS GATE Current vs Forward Voltage Drop -10 15 VINK = VIN = 12V VGATE = VIN + 2.5V VINK > 12V 10 10 20 80 5 VINK = 4V 40 -50 0 50 VSD (mV) 100 0 150 0 VIN = 4V -10 0 -15 IGATE (A) 4376 G07 300 0 1 4376 G08 FET Turn-Off Time vs Initial Overdrive MOSFET RDS(ON) vs Temperature VIN = 40V 20 -5 2 3 4 ILOAD (A) 5 6 7 4376 G09 FET Turn-Off Time vs Final Overdrive 2000 VINK = 12V VSD = VINITIAL -1V 250 20 VINK = 12V VSD = 45mV VFINAL 1500 15 VIN = 4V 150 1000 100 VIN = 40V 10 tPD (ns) 200 tPD (ns) RDSON (m) 60 40 30 25 100 VINK = 8V VGATE (V) 0 IGATE (A) 120 INK = CS VSD (mV) -20 Forward Voltage Drop vs Load Current GATE Drive vs GATE Current 500 50 5 -50 -25 0 25 50 75 TEMPERATURE (C) 100 125 4376 G10 0 0 0.2 0.4 0.6 VINITIAL (V) 0.8 1 4376 G11 0 0 -0.2 -0.4 -0.6 VFINAL (V) -0.8 -1 4376 G12 Rev. A For more information www.analog.com 5 LTC4376 PIN FUNCTIONS CS: Gate Drive Return. The fast pull-down current is returned through this pin during a reverse current event. This pin can be connected to IN or left open. NC: No Connection. Not internally connected. OUT: The exposed pad is the drain of the internal N-channel MOSFET. OUT is the cathode of the ideal diode and the common output when multiple LTC4376s are configured as an ideal diode-OR. GATE: Gate Drive Output. The GATE pin pulls high, enhancing the N-channel MOSFET when the load current creates more than 30mV of voltage drop across the MOSFET. When the load current is small, GATE is actively driven to maintain 30mV across the MOSFET. If reverse current flows, a fast pull-down circuit quickly connects GATE to the CS pin within 300ns, turning off the MOSFET. Connect this pin to the gate of the external MOSFET in a back-toback configuration, otherwise leave open. OUTK: Drain Voltage Sense. The voltage sensed at this pin is used to control the MOSFET voltage drop. Connect this pin to OUT. SHDN: Shutdown Control Input. The LTC4376 can be shut down to a low current mode by pulling the SHDN pin below 0.6V. Pulling this pin above 2V turns the part on. The SHDN pin can be pulled up to 40V or below VSS by 40V without damage. If the shutdown feature is not used, connect SHDN to IN. IN: Source of Internal N-Channel MOSFET. IN is the anode of the ideal diode. INK: Voltage Sense and Supply Voltage. The voltage sensed at this pin is used to control the MOSFET voltage drop. Connect this pin to IN. VSS: Device Ground. BLOCK DIAGRAM M1 15m IN OUT GATE CS - CHARGE PUMP f = 500kHz NEGATIVE -1.7V +COMP - + - INK FPD COMP + + GATE AMP - + - 30mV INK 30mV OUTK 3A SHDN SHUTDOWN VSS 4376 BD 6 For more information www.analog.com Rev. A LTC4376 OPERATION The LTC4376 is a single positive voltage ideal diode controller that drives an internal N-channel MOSFET as a pass transistor to replace a Schottky diode. The IN and OUT pins form the anode and cathode of the ideal diode, respectively. The input supply is connected to the IN pins, while the OUT pin serves as the output. Both the INK and OUTK pins are connected directly to IN and OUT respectively. The GATE amplifier (see Block Diagram) senses across INK and OUTK and drives the gate of the internal MOSFET to regulate the forward voltage to 30mV. As the load current increases, GATE is driven higher until a point is reached where the internal MOSFET is fully on. Further increases in load current result in a forward drop of RDS(ON)*ILOAD. If the load current is reduced, the GATE amplifier drives the MOSFET gate lower to maintain a 30mV drop. If the input voltage is reduced to a point where a forward drop of 30mV cannot be supported, the GATE amplifier drives the MOSFET off. In the event of a rapid drop in input voltage, such as an input short-circuit fault or negative-going voltage spike, reverse current briefly flows through the MOSFET until it shuts off. This current is provided by any load capacitance and by other supplies or batteries that feed the output in diode-OR applications. The FPD COMP (Fast Pull-Down Comparator) quickly responds to this condition by turning the MOSFET off in 300ns, thus minimizing the disturbance to the output bus. The IN, INK, CS, GATE and SHDN pins are protected against reverse inputs of up to -40V. The NEGATIVE COMP detects negative input potentials at the CS pin and quickly pulls GATE to CS, turning off the MOSFET and isolating the load from the negative input. When pulled low, the SHDN pin turns off most of the internal circuitry, reducing the quiescent current to 9A and holding the MOSFET off. The SHDN pin may be either driven high or pulled up with a resistor of 1M or less to enable the LTC4376. In applications where an external MOSFET is used in series with the internal MOSFET, the SHDN pin serves as an on/off control for the forward path, as well as enabling the diode function. APPLICATIONS INFORMATION Blocking diodes are commonly placed in series with supply inputs for the purpose of ORing redundant power sources and protecting against supply reversal. The LTC4376 replaces diodes in these applications to reduce both the voltage drop and power loss associated with a passive solution. The LTC4376 has a wide operating range of 4V to 40V which allows operation during cold crank conditions and transient conditions. The LTC4376 also protects against negative inputs to -40V, which can occur when the automotive battery is reversed. A 12V/7A ideal diode application is shown in Figure1a. Ideal diodes, like their non-ideal counterparts, exhibit a behavior known as reverse recovery. In combination with parasitic or intentionally introduced inductances, reverse recovery spikes may be generated by an ideal diode during commutation. D1, D2 and R1 protect against these spikes which might otherwise exceed the LTC4376's -40V to 40V survival rating. If reverse input protection is not needed, Figure1a can be simplified to Figure1b. D1 and COUT absorb the reverse recovery energy and protect the LTC4376. Spikes and protection schemes are discussed in detail in the Input Short-Circuit Faults section. It is important to note that the SHDN pin, while disabling the LTC4376 and reducing its current consumption to 9A, does not disconnect the load from the input since the internal MOSFET's body diode is ever-present. Adding an external MOSFET permits use in load switching applications. Rev. A For more information www.analog.com 7 LTC4376 APPLICATIONS INFORMATION LTC4376 D1 SMAJ24CA 24V VOUT 12V 7A OUT IN VIN 12V CS OUTK INK SHDN and Figure4 are alternative solutions that level-shift the control signal and eliminate glitches. LTC4376 COUT 47nF VSS 4376 F01a R1 1k SHDN M1 BSS123 ON OFF VSS 4376 F02 R1 1k Figure1a. 12V/7A Ideal Diode with Reverse Input Protection Figure2. SHDN Control LTC4376 VIN 12V D1 SBR1U150SA IN OUT CS OUTK INK SHDN 24V VOUT 12V 7A R4 240k COUT 100F VSS 4376 F01b Q1 2N5551 OFF ON Figure1b. 12V/7A Ideal Diode without Reverse Input Protection R2 100k IN Q2 2N5401 LTC4376 SHDN R3 100k R5 240k VSS 4376 F03 R1 1k Shutdown Mode In shutdown, the LTC4376 pulls GATE low to CS, turning off the internal MOSFET and reducing its current consumption to 9A. Shutdown does not interrupt forward current flow, a path is still present through the internal MOSFET's body diode. A second external MOSFET is needed to block the forward path; see the section Load Switching and Inrush Control. When enabled, the LTC4376 operates as an ideal diode. If shutdown is not needed, connect SHDN to IN. SHDN may be driven with a 3.3V or 5V logic signal or pulled up with an external resistor to IN. To enable the part, SHDN must be pulled up to at least 2V. Use a resistor value that provides more than the SHDN pin leakage current of 1A at 2.6V. A value of 1M or less is sufficient to turn the part on. To assert SHDN low, the pull-down must sink at least 5A plus the current provided by the external pull-up resistor at 500mV. When a high impedance pull-up resistor is used, SHDN is subject to capacitive coupling from nearby clock lines or traces exhibiting high dV/dt. Bypass SHDN to VSS with 10nF to eliminate injection. Figure2 is the simplest way to control the shutdown pin. Since the control signal ground is different from the SHDN pin reference, VSS, there could be momentary glitches on SHDN during transients. Figure3 8 Figure3. Transistor SHDN Control 24V ON OFF R4 2k IN R2 1M SHDN MOC 207M R3 2M LTC4376 VSS 4376 F04 R1 1k Figure4. Opto-Isolator SHDN Control Input Short-Circuit Faults The dynamic behavior of an active, ideal diode entering reverse bias is most accurately characterized by a delay followed by a period of reverse recovery. During the delay phase some reverse current is built up, limited by parasitic resistances and inductances. During the reverse recovery phase, energy stored in the parasitic inductances is transferred to other elements in the circuit. Current slew rates during reverse recovery may reach 100A/s or higher. Rev. A For more information www.analog.com LTC4376 APPLICATIONS INFORMATION High slew rates coupled with parasitic inductances in series with the input and output paths may cause potentially destructive transients to appear at the IN, CS and OUT pins of the LTC4376 during reverse recovery. A zero impedance short-circuit directly across the input and ground is especially troublesome because it permits the highest possible reverse current to build up during the delay phase. When the internal MOSFET finally turns off to interrupt the reverse current, the LTC4376 IN and CS pins experience a negative voltage spike while the OUT pin spikes in the positive direction. OUT is protected by the MOSFET's avalanche breakdown. Nevertheless, the MOSFET could be damaged by excessive current in applications greater than 24V. If the input is greater than 24V, then a 28V TVS (SMAJ28A) or a snubber can be used to protect the MOSFET and OUT pin. The snubber allows applications up to 40V (see Figure13). COUT and R1 preserve the fast turn-off time when output parasitic inductance causes the IN and OUT voltages to drop quickly. To prevent damage to the LTC4376 under conditions of input short-circuit, protect the IN, CS and OUT pins as shown in Figure5. The IN and CS pins are protected by clamping to the VSS pin with a Tranzorb or TVS. For input voltages 24V and greater, D3 is needed to protect the internal MOSFET's gate oxide during input short-circuit conditions. Negative spikes, seen after the MOSFET turns off during an input short, are clamped by D2, a 24V TVS. D2 allows reverse inputs to 24V while keeping the MOSFET off and is not required if reverse input protection is not needed. D1 blocks D2 from conducting during normal operation. When the input short condition disappears, the current stored in the source parasitic inductance, LS, flows through the body diode of the MOSFET charging up CLOAD. If CLOAD is small or nonexistent, both the IN/ CS and OUT pins may rise to a level that can damage the LTC4376. In this case, D1 will need to be a TVS or TransZorb to limit the voltage difference between the IN/ CS and VSS pins. Multiple LTC4376s can be used to combine the outputs of two or more supplies for redundancy or for droop sharing, as shown in Figure6. For redundant supplies, the supply with the highest output voltage sources most or all of the load current. If this supply's output is quickly shorted to ground while delivering load current, the flow of current temporarily reverses and flows backwards through the LTC4376's internal MOSFET. The LTC4376 senses this reverse current and activates a fast pull-down to quickly turn off the MOSFET. Paralleling Supplies If the other, initially lower supply was not delivering any load current at the time of the fault, the output falls until the body diode of its ORing internal MOSFET conducts. Meanwhile, the LTC4376 charges the internal MOSFET gate with 10A until the forward drop is reduced to 30mV. If this supply was sharing load current at the time of the fault, its associated ORing internal MOSFET was already driven partially on. In this case, the LTC4376 will simply D4* SMAJ28A LS SOURCE PARASITIC INDUCTANCE LIN INPUT PARASITIC INDUCTANCE REVERSE RECOVERY CURRENT VIN INPUT SHORT D1 1N4148 D2 SMAJ24A 24V D3 DDZ9699T 12V LOUT OUTPUT PARASITIC INDUCTANCE LTC4376 IN OUT VOUT CS CLOAD OUTK GATE INK SHDN COUT >1.5F VSS R1 1k 4376 F05 * OPTIONAL FOR VIN > 24V Figure5. Reverse Recovery Produces Inductive Spikes at the IN, CS and OUT Pins. The Polarity of Step Recovery Is Shown Across Parasitic Inductances Rev. A For more information www.analog.com 9 LTC4376 APPLICATIONS INFORMATION LTC4376 IN VINA = 12V D1A SMAJ24CA 24V PSA RTNA 12V 7A BUS OUT CS INK SHDN OUTK COUTA 1.5F VSS R1A 1k LTC4376 IN VINB = 12V D1B SMAJ24CA 24V PSB RTNB OUT CS INK SHDN OUTK COUTB 1.5F VSS 4376 F06 R1B 1k Figure6. Redundant Power Supplies drive the internal MOSFET gate harder in an effort to maintain a drop of 30mV. Droop sharing can be accomplished if both power supply output voltages and output impedances are nearly equal. The 30mV regulation technique ensures smooth load sharing between outputs without oscillation. The degree of sharing is a function of internal MOSFET RDS(ON), the output impedance of the supplies and their initial output voltages. Load Switching and Inrush Control By adding an external MOSFET as shown in Figure7, the LTC4376 can be used to control power flow in the forward direction while retaining ideal diode behavior in M1 PSMN005-75B the reverse direction. The body diodes of both the external and internal MOSFETs prohibit current flow when the MOSFETs are off. The internal MOSFET serves as the ideal diode, while the external MOSFET, M1, acts as a switch to control forward power flow. On/Off control is provided by the SHDN pin, and C1 and R3 may be added if inrush control is desired. When SHDN is driven high and provided VIN>VOUT+30mV, GATE sources 10A and gradually charges C1, pulling up both MOSFET gates. The external MOSFET operates as source follower and IINRUSH = 10A * CLOAD C1 LTC4376 IN VIN 28V D1 SMAJ40A 40V D2 SMAJ24A 24V C1 10nF R3 10k R2 10 D3 DDZ9699T 12V ON OFF OUT CS CLOAD VOUT 28V 7A OUTK GATE INK SHDN COUT 1.5F VSS R1 1k 4376 F07 Figure7. 28V Load Switch and Ideal Diode with Reverse Input Protection 10 Rev. A For more information www.analog.com LTC4376 APPLICATIONS INFORMATION If VIN<VOUT+30mV, the LTC4376 will be activated but holds both the MOSFETs off until the input exceeds the output by 30mV. In this way, normal diode behavior of the circuit is preserved, but with soft starting when the diode turns on. OUTK pins should be connected as close as possible to the IN and OUT pins respectively for good accuracy. The PCB traces associated with the power path through the MOSFET should have low resistance. Keep the traces to the IN and OUT wide and short to minimize resistive losses. To ensure a low resistance contact, solder the device's OUT pin to the board using a reflow process. The wide OUT trace also acts as a heat sink to remove the heat from the device at high current load. Place COUT, surge suppressors and necessary transient protection components close to the LTC4376 using short lead lengths. See Figure8 for the recommended layout. The temperature rise of the recommended layout with 7A is 50C. When SHDN is pulled low, GATE pulls both the MOSFET gates down quickly to CS turning off both forward and reverse paths, and the input current is reduced to 9A. While C1 and R3 may be omitted if soft starting is not needed, R2 is necessary to prevent MOSFET parasitic oscillations and must be placed close to the external MOSFET, M1. 10 INK 11 NC VOUT 17 OUT 8 5 NC GATE 4 IN 7 3 IN VSS 6 2 OUTK 12 SHDN 13 IN 14 IN 15 IN 1 IN LTC4376DHD IN VIN 16 IN The following advice should be considered when laying out a printed circuit board for the LTC4376: The INK and 9 CS Figure9 through Figure16 show typical applications of the LTC4376. Layout Considerations COUT VSS 4376 F08 Figure8. Recommended Layout for DFN Package Rev. A For more information www.analog.com 11 LTC4376 APPLICATIONS INFORMATION LTC4376 VINA 1.2V IN CS INK SHDN OUT CLOAD OUTK VOUT 1.2V 7A COUTA 47nF VSS R1A 1k -12V LTC4376 VINB 1.2V IN CS INK SHDN OUT OUTK COUTB 47nF VSS 4376 F09 R1B 1k -12V Figure9. 1.2V Diode-OR LTC4376 IN 80W SOLAR PANEL SHUNT REGULATOR CS INK SHDN OUT OUTK VSS + 12V BATTERY LOAD 4376 F10 Figure10. Lossless Solar Panel Isolation 12 Rev. A For more information www.analog.com LTC4376 APPLICATIONS INFORMATION M1 PSMN005-75B LTC4376 IN VIN 12V D1 SMAJ24CA 24V C1 10nF R3 10k OUT CS R2 10 CLOAD GATE OFF ON VOUT 12V 7A OUTK INK SHDN COUT 47nF VSS D4 S1B 4376 F11 R1 1k Figure11. 12V Load Switch and Ideal Diode with Reverse Input Protection M1 PSMN005-75B LTC4376 IN VIN 12V 8.2M 2M IN+ UV = 10.8V D1 SMAJ24CA 24V LTC1540 IN- HYST + - CS R2 10 GATE INK SHDN OUTK COUT 1.5F VSS 4376 F12 REF 1M VOUT 12V 7A OUT V- GND DDZ9697T 10V R1 1k Figure12. 12V Load Switch and Ideal Diode with Precise Undervoltage Lockout Rev. A For more information www.analog.com 13 LTC4376 APPLICATIONS INFORMATION D5* R2* 1N4148 1k D4* ES1A C1* 0.47F LTC4376 VIN 24V IN D1 SMAJ40A 40V D3 DDZ9699T 12V D2 SMAJ24A 24V OUT CS GATE INK SHDN VOUT 24V 7A OUTK COUT 1.5F VSS R1 1k 4376 F13 *OPTIONAL FOR VIN > 24V Figure13. 24V/7A Ideal Diode with Reverse Input Protection to VIN < VOUT - 40V LTC4376 VIN 24V OUT IN D1 SMAJ40A 40V CS INK GATE OUTK OFF ON SHDN VSS 4376 F14 D3 DDZ9699T 12V VOUT 24V CLOAD 7A R3 10k C1 10nF Figure14. 24V Load Switch without Ideal Diode Function 14 Rev. A For more information www.analog.com LTC4376 APPLICATIONS INFORMATION R5A* 100k M1A PSMN005-75B LTC4376 IN VINA 12V OUT CS CLOAD GATE D1A SMAJ24CA 24V OUTK INK OFF ON VOUT 12V 7A SHDN COUTA 1.5F VSS R1A 1k R5B* 100k M1B PSMN005-75B LTC4376 IN VINB 12V OUT CS GATE D1B SMAJ24CA 24V OUTK INK OFF ON SHDN COUTB 1.5F VSS 4376 F15 R1B 1k *DECREASES GATE RAMP TIME BY BIASING CSX NEAR VINX 100k PATH TO VOUT IF VOUT < VINX Figure15. Diode-OR with Selectable Power Supply Feeds and Reverse Input Protection LTC4376 D1 SMAJ24CA 24V FDD16AN08A0 10m OUT IN VIN 12V CS 22F OUTK INK SHDN -27V TO 27V DC SURVIVAL -40V TO 80V TRANSIENT SURVIVAL VSS R1 1k 10 COUT 47nF VCC GATE SNS 57.6k OUT FB SHDN UV 5A OUTPUT (CLAMPED AT 16V) LT4363 ENOUT 4.99k FLT OV GND TMR 0.1F 4376 F16 Figure16. Overvoltage Protector and Ideal Diode Blocks Reverse Input Voltage Rev. A For more information www.analog.com 15 LTC4376 PACKAGE DESCRIPTION DHD Package 16-Lead Plastic DFN (5mm x 4mm) (Reference LTC DWG # 05-08-1707 Rev A) 0.70 0.05 4.50 0.05 3.10 0.05 2.44 0.05 (2 SIDES) PACKAGE OUTLINE 0.25 0.05 0.50 BSC 4.34 0.05 (2 SIDES) RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS 5.00 0.10 (2 SIDES) 9 4.00 0.10 (2 SIDES) R = 0.115 TYP 0.40 0.10 16 2.44 0.10 (2 SIDES) PIN 1 TOP MARK (SEE NOTE 6) PIN 1 NOTCH 8 0.200 REF 1 0.25 0.05 0.50 BSC 0.75 0.05 0.00 - 0.05 (DHD16) DFN REV A 1113 4.34 0.10 (2 SIDES) BOTTOM VIEW--EXPOSED PAD NOTE: 1. DRAWING PROPOSED TO BE MADE VARIATION OF VERSION (WJGD-2) IN JEDEC PACKAGE OUTLINE MO-229 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 16 Rev. A For more information www.analog.com LTC4376 REVISION HISTORY REV DATE DESCRIPTION A 08/19 Added AEC-Q100. PAGE NUMBER 1, 2 Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license For is granted implication or otherwise under any patent or patent rights of Analog Devices. more by information www.analog.com 17 LTC4376 TYPICAL APPLICATION Input Diode for Supply Hold-Up on Plug-In Card PLUG-IN BACKPLANE CARD LTC4376 IN 24V DDZ9699T 12V SMAJ40A 40V OUT CS GATE INK SHDN LTC4260 HOT SWAP CONTROLLER OUTK VSS 1.5F VOUT1 + CHOLDUP 1k 4376 TA02 GND RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT4256-1 High Voltage Hot Swap Controllers Active Current Limiting, 10.8V to 80V Operation, Latch-Off/Auto-Retry LTC4260 High Voltage Hot Swap Controller with I2C Compatible Monitoring With I2C and ADC, Supplies from 8.5V to 80V LTC4281 Hot Swap Controller with I2C Compatible Monitoring With I2C and ADC, Supplies from 2.9V to 33V LTC4352 Low Voltage Ideal Diode Controller Controls N-Channel MOSFET, 0V to 18V Operation LTC4353 Dual Low Voltage Ideal Diode Controller Controls Two N-Channel MOSFETs, 0V to 18V Operation LTC4355 High Voltage Ideal Diode-OR and Monitor Controls Two N-Channel MOSFETs, 0.4s Turn-Off, 80V Operation LTC4357 High Voltage Ideal Diode Controller Controls Single N-Channel MOSFET, 0.5s Turn-Off, 80V Operation LTC4358 5A Ideal Diode Internal N-Channel MOSFET, 9V to 26.5V Operation LTC4359 Ideal Diode Controller with Reverse Input Protection Controls N-Channel MOSFET, 4V to 80V Operation, -40V Reverse Input LT4363 High Voltage Surge Stopper with Current Limit Stops High Voltage Surges, 4V to 80V, -60V Reverse Input Operation LTC4364 Surge Stopper with Ideal Diode 4V to 80V Operation, -40V Reverse Input, -20V Reverse Output LTC4371 Dual Negative Voltage Ideal Diode-OR Controller and Monitor Controls Two MOSFETs, 220ns Turn-Off, Withstands > 300V Transients LTC4411 2.6A Ideal Diode Internal N-Channel MOSFET, 2.6V to 5.5V Operation LTC4415 4A Dual Ideal Diode Internal P-Channel MOSFET, 1.7V to 5.5V Operation LTC4413 2.6A Dual Ideal Diode Internal P-Channel MOSFET, 2.5V to 5.5V Operation 18 Rev. A 08/19 www.analog.com For more information www.analog.com ANALOG DEVICES, INC. 2018-2019