BUZ 71 S2 Not for new design SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 71 S2 60 V 14 A 0.1 TO-220 AB C67078-S1316-A9 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 C Values Unit A 14 IDpuls Pulsed drain current TC = 25 C 56 Avalanche current,limited by Tjmax IAR 14 Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse EAR 1 mJ EAS ID = 14 A, VDD = 25 V, RGS = 25 L = 30.6 H, Tj = 25 C 6 Gate source voltage VGS Power dissipation Ptot TC = 25 C 20 V W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 3.1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 150 / 56 1 07/96 BUZ 71 S2 Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 60 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS A VDS = 60 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 60 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 9 A Semiconductor Group nA - 2 0.08 0.1 07/96 BUZ 71 S2 Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 9 A Input capacitance 4 pF - 450 600 - 220 350 - 85 150 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 7.7 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 20 30 - 40 60 - 55 70 - 40 55 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 71 S2 Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 56 V 1.5 1.8 trr ns - 60 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 14 - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 28 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 0.1 - 07/96 BUZ 71 S2 Not for new design Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 15 45 A W Ptot ID 35 12 11 10 30 9 25 8 7 20 6 5 15 4 10 3 2 5 1 0 0 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 1 t = 4.0s p 10 s K/W / D I = DS A 100 s V ZthJC DS (o n) 10 1 160 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 2 ID C TC 10 0 R 1 ms 10 -1 10 ms D = 0.50 0.20 10 0 0.10 0.05 10 -2 DC 0.02 0.01 single pulse 10 -1 0 10 10 1 V 10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 71 S2 Not for new design Typ. output characteristics ID = (VDS) parameter: tp = 80 s 32 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.32 Ptot = 40W l k j i ID a A VGS [V] a 4.0 h 24 g 20 f 16 e 12 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 d j 9.0 k 10.0 l 20.0 8 b c d e f g RDS (on) 0.24 0.20 0.16 h 0.12 i j 0.08 k c 4 0.04 VGS [V] = b a 4.0 4.5 a 0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.00 0.0 1.0 2.0 3.0 4.0 V 6.0 0 4 8 12 16 20 24 VDS A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max ID 30 ID 18 10 A S gfs 14 8 7 12 6 10 5 8 4 6 3 4 2 2 0 0 1 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0 2 4 6 8 10 12 A ID 07/96 16 BUZ 71 S2 Not for new design Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 9 A, VGS = 10 V 0.32 4.6 V 98% 4.0 VGS(th) RDS (on) 0.24 3.6 typ 3.2 0.20 2.8 2.4 0.16 0.12 98% 2.0 typ 1.6 2% 1.2 0.08 0.8 0.04 0.4 0.0 0.00 -60 -20 20 60 100 C -60 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A C IF 10 0 10 1 Ciss Coss 10 -1 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 71 S2 Not for new design Avalanche energy EAS = (Tj ) parameter: ID = 14 A, VDD = 25 V RGS = 25 , L = 30.6 H Typ. gate charge VGS = (QGate) parameter: ID puls = 22 A 6.5 16 mJ V 5.5 EAS VGS 5.0 12 4.5 0,2 VDS max 10 4.0 0,8 VDS max 3.5 8 3.0 2.5 6 2.0 4 1.5 1.0 2 0.5 0.0 20 0 40 60 80 100 120 C 160 Tj 0 4 8 12 16 20 24 nC Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 71 V V(BR)DSS 68 66 64 62 60 58 56 54 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 30 BUZ 71 S2 Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96