DEMO-ATF-3X1M4A - Agilent / Hewlett-Packard

Agilent ATF-331M4 Low Noise

Pseudomorphic HEMT in a

Miniature Leadless Package

Data Sheet

Description

Agilent Technologies’s

ATF-331M4 is a high linearity,

low noise pHEMT housed in a

miniature leadless package.

The ATF-331M4’s small size and

low profile makes it ideal for the

design of hybrid modules and

other space-constraint devices.

Based on its featured perfor-

mance, ATF-331M4 is ideal for

the first or second stage of base

station LNA due to the excellent

combination of low noise figure

and enhanced linearity [1]. The

device is also suitable for appli-

cations in Wireless LAN,

WLL/RLL, MMDS, and other

systems requiring super low

noise figure with good intercept

in the 450 MHz to 10 GHz

frequency range.

Note:

1. From the same PHEMT FET family, the

smaller geometry ATF-34143 may also be

considered for the higher gain performance,

particularly in the higher frequency band

(1.8 GHz and up).

Features

• Low noise figure

• Excellent uniformity in product

specifications

• 1600 micron gate width

• Miniature leadless package

1.4 mm x 1.2 mm x 0.7 mm

• Tape-and-reel packaging option

available

Specifications

2 GHz; 4 V, 60 mA (Typ.)

• 0.6 dB noise figure

• 15 dB associated gain

• 19 dBm output power at 1 dB gain

compression

• 31 dBm output 3rd order intercept

Applications

• Tower mounted amplifier, low noise

amplifier and driver amplifier for

GSM/TDMA/CDMA base stations

• LNA for WLAN, WLL/RLL, MMDS

and wireless data infrastructures

•

General purpose discrete PHEMT for

other ultra low noise applications

MiniPak 1.4 mm x 1.2 mm Package

Pin Connections and

Package Marking

Note:

Top View. Package marking provides orientation,

product identification and date code.

“P” = Device Type Code

“x” = Date code character. A different

character is assigned for each month

and year.

Source

Pin 3

Gate

Pin 2

Source

Pin 1

Drain

Pin 4

ATF-331M4 Absolute Maximum Ratings[1]

Absolute

Symbol Parameter Units Maximum

VDS Drain-Source Voltage[2] V 5.5

VGS Gate-Source Voltage[2] V-5

VGD Gate Drain Voltage[2] V-5

IDS Drain Current[2] mA Idiss[3]

Pdiss Total Power Dissipation[4] mW 400

Pin max. RF Input Power dBm 20

TCH Channel Temperature[5] °C 160

TSTG Storage Temperature °C -65 to 160

θjc Thermal Resistance[6] °C/W 200

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Assumes DC quiescent conditions.

3. VGS = 0 V

4. Source lead temperature is 25°C. Derate

5 mW/°C for TL > 40°C.

5. Please refer to failure rates in reliability data

sheet to assess the reliability impact of

running devices above a channel temperature

of 140°C.

6. Thermal resistance measured using 150°C

Liquid Crystal Measurement method.

Product Consistency Distribution Charts [8, 9]

(V)

Figure 1. Typical Pulsed I-V Curves

[7]

= -0.2 V per step)

(mA)

02 468

500

400

300

200

100

-0.6 V

0 V

+0.6 V

NF (dBm)

Figure 2. NF @ 2 GHz, 4 V, 60 mA.

LSL = 28.5, Nominal = 0.6, USL = 0.8.

0.2 0.4 0.5 0.6 0.70.3 0.8 0.9

100

-3 Std +3 Std

Cpk = 1.05

Stdev = 0.07

OIP3 (dBm)

Figure 3. OIP3 @ 2 GHz, 4 V, 60 mA.

LSL = 28.5, Nominal = 31.0, USL = 36.0

28 3230 34 36

-3 Std +3 Std

150

120

Cpk = 1.00

Stdev = 1.07

GAIN (dB)

Figure 4. Gain @ 2 GHz, 4 V, 60 mA.

LSL = 13.5, Nominal = 15.0, USL = 16.5

13 1514 16 17

-3 Std +3 Std

120

100

Cpk = 4.37

Stdev = 1.11

Notes:

8. Distribution data sample size is 349 samples from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere within

the upper and lower spec limits.

9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on

production test requirements. Circuit losses have been de-embedded from actual measurements.

Note:

7. Under large signal conditions, VGS may swing

positive and the drain current may exceed

Idss. These conditions are acceptable as long

as the Maximum Pdiss and Pin max ratings are

not exceeded.

ATF-331M4 DC Electrical Specifications

TA = 25°C, RF parameters measured in a test circuit for a typical device

Symbol Parameter and Test Condition Units Min. Typ.[2] Max.

Idss[1] Saturated Drain Current Vds = 1.5V, Vgs = 0V mA 175 237 305

Vp[1] Pinch-off Voltage Vds = 1.5V, Ids = 10% of Idss V -0.65 -0.5 -0.35

Id Quiescent Bias Current Vgs = -0.51V, Vds = 4V mA — 60 —

Gm[1] Transconductance Vds = 1.5V, Gm = Idss/Vp mmho 360 440 —

Igdo Gate to Drain Leakage Current Vgd = -5 V µA — — 1000

Igss Gate Leakage Current Vgd = Vgs = -4V µA — 42 600

NF Noise Figure f = 2 GHz Vds = 4V, Ids = 60 mA dB — 0.6 0.8

f = 900 MHz Vds = 4V, Ids = 60 mA dB — 0.5 —

Ga Associated Gain f = 2 GHz Vds = 4V, Ids = 60 mA dB 13.5 15 16.5

f = 900 MHz Vds = 4V, Ids = 60 mA dB — 21 —

OIP3 Output 3rd Order f = 2 GHz, 5 dBm Pout/Tone Vds = 4V, Ids = 60 mA dBm 28.5 31 —

Intercept Point[3] f = 900 MHz, 5 dBm Pout/Tone Vds = 4V, Ids = 60 mA dBm — 30.8 —

P1dB 1dB Compressed f = 2 GHz Vds = 4V, Ids = 60 mA dBm — 19 —

Output Power[3] f = 900 MHz Vds = 4V, Ids = 60 mA dBm — 18 —

Notes:

1. Guaranteed at wafer probe level

2. Typical values are determined from a sample size of 349 parts from 4 wafers.

3. Measurements obtained using production test board described in Figure 5.

Input 50Ω Input

Transmission Line

Including

Gate Bias T

(0.3 dB loss)

Input

Matching Circuit

Γ_mag = 0.13

Γ_ang = 113°

(0.3 dB loss)

50Ω Output

Transmission Line

Including

Gate Bias T

(0.5 dB loss)

DUT

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit

represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been

de-embedded from actual measurements.

ATF-331M4 Typical Performance Curves

Notes:

1. Measurements made on fixed tuned

production test board that was tuned for

optimal gain match with reasonable noise

figure at 4V 60 mA bias. This circuit

represents a trade-off between an optimal

noise match, maximum gain match and a

realizable match based on production test

board requirements. Circuit losses have been

de-embedded from actual measurements.

2. Quiescent drain current, Idsq, is set with zero

RF drive applied. As P1dB is approached, the

drain current may increase or decrease

depending on frequency and dc bias point. At

lower values of Idsq the device is running

closer to class B as power output approaches

P1dB. This results in higher P1dB and higher

PAE (power added efficiency) when compared

to a device that is driven by a constant

current source as is typically done with active

biasing.

Figure 8. P1dB vs. Bias

[1,2]

2 GHz.

dsq

(mA)

P1dB (dBm)

0 1004020 8060

Figure 10. NF & Gain vs. Bias

[1]

at 2 GHz.

(mA)

GAIN (dB)

NOISE FIGURE (dB)

0 1004020 8060

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Figure 6. OIP3, IIP3 & Bias

[1]

at 2 GHz.

(mA)

OIP3, IIP3 (dBm)

0 1004020 8060

Figure 7. OIP3, IIP3 & Bias

[1]

at 900 MHz.

(mA)

OIP3, IIP3 (dBm)

0 1004020 8060

Figure 9. P1dB vs. Bias

[1]

900 MHz.

dsq

(mA)

P1dB (dBm)

0 1004020 8060

Figure 11. NF & Gain vs. Bias

[1]

at 900 MHz.

(mA)

GAIN (dB)

NOISE FIGURE (dB)

0 1204020 80 10060

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Notes:

1. Measurements made on fixed tuned

production test board that was tuned for

optimal gain match with reasonable noise

figure at 4V 60 mA bias. This circuit

represents a trade-off between an optimal

noise match, maximum gain match and a

realizable match based on production test

board requirements. Circuit losses have been

de-embedded from actual measurements.

2. Quiescent drain current, Idsq, is set with zero

RF drive applied. As P1dB is approached, the

drain current may increase or decrease

depending on frequency and dc bias point. At

lower values of Idsq the device is running

closer to class B as power output approaches

P1dB. This results in higher P1dB and higher

PAE (power added efficiency) when compared

to a device that is driven by a constant

current source as is typically done with active

biasing.

ATF-331M4 Typical Performance Curves, continued

Figure 12. Fmin vs. Frequency at 4 V, 60 mA.

FREQUENCY (GHz)

Fmin (dB)

0104286

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Figure 14. Fmin & Ga vs. Frequency and Temp.

Vd = 4V , Ids = 60 mA.

FREQUENCY (GHz)

GAIN (dB)

NOISE FIGURE (dB)

08426

85°C

25°C

-40°C

2.0

1.5

1.0

0.5

Figure 15. P1dB, OIP3 vs. Frequency and

Temp at Vd = 4V , Ids = 60 mA.

FREQUENCY (GHz)

P1dB, OIP3 (dBm)

0845 7213 6

85°C

25°C

-40°C

Figure 16. OIP3, P1dB, NF and Gain vs.

Bias

[1,2]

at 3.9 GHz.

dsq

(mA)

OIP3, P1dB (dBm), GAIN (dB)

NOISE FIUGRE (dB)

0 1004020 8060

P1dB

OIP3

Gain

3.5

3.0

2.5

2.0

1.5

1.0

0.5

Figure 13. Associated Gain vs. Frequency

at 4V , 60 mA.

FREQUENCY (GHz)

GAIN (dB)

0104286

Figure 17. OIP3, P1dB, NF at 5.8 GHz.

dsq

(mA)

OIP3, P1dB (dBm), GAIN (dB)

NOISE FIGURE (dB)

0 1004020 8060

P1dB

OIP3

Gain

3.5

3.0

2.5

2.0

1.5

1.0

0.5

ATF-331M4 Typical Scattering Parameters, VDS = 2V, IDS = 40 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB

0.5 0.82 -91.90 22.10 12.74 127.90 -27.13 0.044 53.30 0.40 -163.10 24.62

0.8 0.79 -119.10 18.85 8.76 112.80 -25.19 0.055 46.70 0.47 -169.67 22.02

1.0 0.78 -132.10 18.06 8.00 106.00 -24.44 0.060 44.70 0.49 -173.83 21.25

1.5 0.76 -151.40 14.75 5.46 93.73 -22.73 0.073 42.73 0.53 177.77 18.74

1.8 0.75 -159.60 13.55 4.76 88.20 -21.72 0.082 42.13 0.53 173.73 17.64

2.0 0.74 -163.60 13.36 4.65 85.00 -21.31 0.086 41.93 0.54 171.27 17.33

2.5 0.72 -170.70 10.33 3.29 77.97 -20.09 0.099 41.33 0.53 165.20 15.21

3.0 0.69 -174.30 9.60 3.02 71.83 -18.12 0.124 40.57 0.55 162.60 13.86

4.0 0.71 163.10 6.62 2.14 53.23 -17.20 0.138 30.30 0.56 138.03 10.77

5.0 0.73 150.00 4.98 1.77 41.60 -16.65 0.147 24.97 0.56 134.30 9.25

6.0 0.71 140.90 3.94 1.57 28.80 -16.08 0.157 17.23 0.57 115.73 7.71

7.0 0.73 123.90 2.92 1.40 14.70 -15.39 0.170 7.10 0.57 109.93 6.97

8.0 0.74 112.90 2.77 1.38 6.70 -15.04 0.177 2.57 0.58 108.90 6.98

9.0 0.76 97.70 2.60 1.35 -4.77 -14.99 0.178 -6.27 0.59 93.03 6.78

10.0 0.79 83.60 2.00 1.26 -18.20 -14.75 0.183 -17.47 0.59 78.30 6.54

11.0 0.86 61.90 0.08 1.01 -32.50 -14.80 0.182 -29.77 0.58 66.00 6.03

12.0 0.87 62.10 -0.71 0.92 -37.90 -14.33 0.192 -33.90 0.65 59.73 5.63

13.0 0.88 51.90 -1.54 0.84 -49.90 -14.89 0.180 -44.67 0.69 49.07 5.20

14.0 0.88 44.60 -2.09 0.79 -58.90 -15.44 0.169 -52.47 0.73 40.13 5.04

15.0 0.91 38.70 -4.00 0.63 -67.70 -15.81 0.162 -60.63 0.75 30.57 4.34

16.0 0.93 33.30 -5.66 0.52 -74.80 -18.71 0.116 -67.27 0.78 24.73 4.04

17.0 0.93 28.40 -5.68 0.52 -80.50 -17.86 0.128 -73.07 0.79 18.67 4.02

18.0 0.92 25.20 -6.58 0.47 -84.00 -17.99 0.126 -77.40 0.81 13.87 3.03

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.50 0.37 0.39 0.6 0.07 21.16

0.90 0.41 0.381 26.3 0.06 18.36

1.00 0.41 0.38 32.9 0.06 18.19

1.50 0.46 0.38 63.6 0.05 15.96

1.80 0.48 0.385 80 0.05 15.43

2.00 0.5 0.39 90.1 0.05 14.56

2.50 0.54 0.407 112.8 0.04 13.29

3.00 0.59 0.431 132 0.04 12.18

4.00 0.67 0.492 161.3 0.03 10.4

5.00 0.76 0.565 -179 0.02 8.94

6.00 0.85 0.638 -166 0.02 7.96

7.00 0.93 0.702 -156.9 0.04 7

8.00 1.02 0.747 -148.9 0.07 6.16

9.00 1.11 0.762 -139 0.11 5.8

10.00 1.19 0.737 -124.5 0.18 4.89

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 2V, IDS = 40 mA

Figure 18. MSG/MAG and |S

vs.

Frequency at 2V , 40 mA.

MSG

MAG

FREQUENCY (GHz)

MSG/MAG and |S21|2 (dB)

02010515

-10

|S21|2

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.50 0.37 0.377 0.7 0.07 21.42

0.90 0.41 0.367 24.5 0.06 18.53

1.00 0.42 0.366 31.1 0.06 18.28

1.50 0.46 0.365 61.6 0.05 15.95

1.80 0.49 0.37 77.8 0.05 15.42

2.00 0.51 0.374 87.9 0.05 14.61

2.50 0.55 0.392 110.5 0.04 13.33

3.00 0.59 0.416 129.6 0.04 12.25

4.00 0.68 0.479 159.2 0.03 10.5

5.00 0.77 0.553 179.4 0.02 9.06

6.00 0.86 0.627 -167.2 0.02 8.05

7.00 0.95 0.69 -157.6 0.04 7.13

8.00 1.04 0.733 -149.2 0.06 6.38

9.00 1.13 0.742 -139.1 0.1 5.97

10.00 1.22 0.709 -124.7 0.18 5

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 3V, IDS = 40 mA

Figure 19. MSG/MAG and |S

vs.

Frequency at 3V , 40 mA.

MSG

MAG

FREQUENCY (GHz)

MSG/MAG and |S21|2 (dB)

02010515

-10

|S21|2

ATF-331M4 Typical Scattering Parameters, VDS = 3V, IDS = 40 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB

0.5 0.82 -90.50 22.45 13.27 128.40 -27.54 0.042 53.80 0.38 -155.50 24.99

0.8 0.78 -117.70 19.31 9.24 113.30 -25.35 0.054 47.10 0.44 -165.77 22.33

1.0 0.77 -130.90 18.50 8.41 106.40 -24.58 0.059 45.10 0.46 -170.63 21.54

1.5 0.75 -150.40 15.23 5.77 93.93 -22.97 0.071 43.03 0.49 180.17 19.10

1.8 0.74 -158.70 14.02 5.02 88.30 -21.94 0.080 42.33 0.49 -184.17 17.98

2.0 0.74 -162.70 13.79 4.89 85.10 -21.51 0.084 42.13 0.50 173.27 17.65

2.5 0.72 -170.00 10.81 3.47 77.97 -20.18 0.098 41.53 0.50 166.80 15.49

3.0 0.69 -174.10 9.60 3.02 71.63 -18.24 0.122 40.67 0.52 163.70 13.92

4.0 0.71 163.70 7.13 2.27 53.03 -17.33 0.136 30.70 0.52 139.43 11.20

5.0 0.73 150.50 5.46 1.87 41.40 -16.83 0.144 25.67 0.52 136.10 9.63

6.0 0.71 141.50 4.37 1.65 28.50 -16.31 0.153 18.13 0.54 118.23 8.02

7.0 0.73 124.40 3.34 1.47 14.10 -15.55 0.167 8.10 0.54 111.83 7.28

8.0 0.74 113.40 3.14 1.44 6.00 -15.19 0.174 3.57 0.54 110.90 7.28

9.0 0.76 98.20 2.94 1.40 -5.57 -15.14 0.175 -4.97 0.55 95.33 7.05

10.0 0.79 84.10 2.33 1.31 -19.10 -14.94 0.179 -16.07 0.55 80.50 6.83

11.0 0.86 62.40 0.44 1.05 -33.40 -14.94 0.179 -28.27 0.55 67.80 6.40

12.0 0.87 62.50 -0.38 0.96 -38.90 -14.47 0.189 -32.20 0.61 61.73 6.00

13.0 0.88 52.30 -1.20 0.87 -50.90 -14.99 0.178 -42.87 0.66 50.97 5.55

14.0 0.89 44.90 -1.79 0.81 -60.20 -15.55 0.167 -50.87 0.70 41.63 5.33

15.0 0.91 39.00 -3.64 0.66 -69.10 -15.81 0.162 -59.03 0.73 32.17 4.81

16.0 0.93 33.40 -5.30 0.54 -76.40 -18.64 0.117 -65.67 0.76 26.13 4.49

17.0 0.93 28.50 -5.40 0.54 -82.40 -17.79 0.129 -71.87 0.78 19.77 4.48

18.0 0.92 25.10 -6.34 0.48 -86.10 -17.92 0.127 -76.40 0.80 14.87 3.39

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.50 0.36 0.35 0.2 0.06 21.97

0.90 0.4 0.341 24.3 0.06 18.96

1.00 0.41 0.34 31.1 0.05 18.77

1.50 0.45 0.341 62.5 0.04 16.31

1.80 0.48 0.346 79.3 0.05 15.79

2.00 0.5 0.351 89.6 0.05 14.93

2.50 0.54 0.37 112.8 0.04 13.67

3.00 0.59 0.395 132.4 0.04 12.62

4.00 0.68 0.461 162.3 0.03 10.78

5.00 0.77 0.538 -177.6 0.02 9.28

6.00 0.86 0.616 -164.4 0.02 8.34

7.00 0.95 0.683 -155.3 0.04 7.37

8.00 1.04 0.729 -147.2 0.07 6.63

9.00 1.13 0.742 -137.3 0.11 6.19

10.00 1.22 0.712 -122.6 0.19 5.23

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 3V, IDS = 60 mA

Figure 20. MSG/MAG and |S

vs.

Frequency at 3V , 60 mA.

MSG

MAG

FREQUENCY (GHz)

MSG/MAG and |S21|2 (dB)

02010515

-10

|S21|2

ATF-331M4 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB

0.5 0.81 -93.60 22.93 14.01 127.00 -28.64 0.037 54.00 0.39 -167.20 25.78

0.8 0.78 -120.70 19.68 9.64 112.10 -26.56 0.047 48.30 0.46 -172.07 23.12

1.0 0.77 -133.60 18.81 8.72 105.40 -25.68 0.052 46.80 0.48 -175.73 22.24

1.5 0.75 -152.50 15.50 5.96 93.43 -23.88 0.064 46.03 0.51 176.57 19.69

1.8 0.74 -160.50 14.27 5.17 88.00 -22.73 0.073 45.93 0.51 172.73 18.50

2.0 0.74 -164.40 14.02 5.02 84.80 -22.16 0.078 46.03 0.52 170.47 18.09

2.5 0.72 -171.30 11.06 3.57 77.97 -20.72 0.092 45.93 0.52 164.60 15.89

3.0 0.70 -175.30 9.80 3.09 71.93 -18.40 0.120 45.37 0.53 161.90 14.10

4.0 0.71 162.70 7.39 2.34 53.33 -17.52 0.133 35.20 0.54 137.43 11.21

5.0 0.73 149.70 5.70 1.93 41.90 -16.95 0.142 29.87 0.54 134.20 9.70

6.0 0.71 140.60 4.61 1.70 29.10 -16.31 0.153 21.73 0.55 116.23 8.18

7.0 0.73 123.70 3.54 1.50 15.10 -15.55 0.167 11.40 0.56 110.13 7.39

8.0 0.74 112.70 3.33 1.47 7.10 -15.09 0.176 6.37 0.56 109.10 7.35

9.0 0.76 97.60 3.12 1.43 -4.37 -15.04 0.177 -2.77 0.57 93.43 7.16

10.0 0.79 83.40 2.52 1.34 -17.80 -14.75 0.183 -14.27 0.57 78.70 6.95

11.0 0.86 61.80 0.66 1.08 -32.10 -14.80 0.182 -26.87 0.57 66.20 6.68

12.0 0.87 62.00 -0.15 0.98 -37.60 -14.29 0.193 -31.00 0.63 60.03 6.21

13.0 0.88 52.00 -0.96 0.90 -49.50 -14.80 0.182 -41.97 0.68 49.47 5.74

14.0 0.89 44.50 -1.56 0.84 -58.70 -15.34 0.171 -50.27 0.71 40.23 5.55

15.0 0.92 38.80 -3.38 0.68 -67.60 -15.65 0.165 -58.43 0.74 30.87 5.16

16.0 0.94 33.20 -5.04 0.56 -74.90 -18.42 0.120 -65.47 0.77 25.03 4.92

17.0 0.94 28.20 -5.15 0.55 -80.90 -17.65 0.131 -71.67 0.78 18.87 4.96

18.0 0.93 24.60 -6.11 0.50 -84.90 -17.79 0.129 -76.30 0.80 14.17 3.76

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.50 0.4 0.335 0.5 0.07 21.8

0.90 0.43 0.332 27.9 0.06 18.83

1.00 0.44 0.332 34.3 0.06 18.59

1.50 0.48 0.338 63.8 0.05 16.22

1.80 0.51 0.345 79.6 0.05 15.46

2.00 0.52 0.352 89.3 0.05 14.61

2.50 0.57 0.373 111.3 0.05 13.34

3.00 0.61 0.4 130 0.04 12.29

4.00 0.69 0.467 158.9 0.03 10.47

5.00 0.78 0.542 178.7 0.03 8.96

6.00 0.86 0.617 -167.8 0.02 8.05

7.00 0.95 0.68 -158.1 0.04 7.19

8.00 1.03 0.724 -149.3 0.06 6.41

9.00 1.12 0.738 -138.9 0.1 6.15

10.00 1.2 0.712 -124.2 0.18 5.07

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 4V, IDS = 40 mA

Figure 21. MSG/MAG and |S

vs.

Frequency at 4V , 40 mA.

MSG

MAG

FREQUENCY (GHz)

MSG/MAG and |S21|2 (dB)

02010515

-10

|S21|2

ATF-331M4 Typical Scattering Parameters, VDS = 4V, IDS = 40 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB

0.5 0.82 -89.80 22.59 13.48 128.80 -27.54 0.042 54.00 0.36 -149.40 25.06

0.8 0.78 -116.90 19.49 9.43 113.60 -25.51 0.053 47.30 0.41 -162.57 22.50

1.0 0.77 -130.00 18.68 8.59 106.60 -24.73 0.058 45.20 0.43 -167.93 21.70

1.5 0.75 -149.70 15.42 5.90 94.13 -22.97 0.071 42.93 0.46 -177.83 19.20

1.8 0.74 -158.00 14.21 5.13 88.40 -22.05 0.079 42.23 0.46 177.53 18.13

2.0 0.74 -162.20 13.70 4.84 85.10 -21.51 0.084 41.93 0.47 174.77 17.61

2.5 0.72 -169.50 11.50 3.76 77.87 -20.26 0.097 41.33 0.48 168.10 15.88

3.0 0.69 -173.80 10.20 3.24 71.53 -18.20 0.123 40.47 0.49 164.80 14.20

4.0 0.70 164.10 7.34 2.33 52.63 -17.46 0.134 30.50 0.50 140.63 11.39

5.0 0.73 150.90 5.66 1.92 40.90 -16.95 0.142 25.67 0.50 137.60 9.81

6.0 0.71 141.80 4.54 1.69 28.00 -16.42 0.151 18.43 0.51 120.43 8.14

7.0 0.73 124.70 3.52 1.50 13.40 -15.65 0.165 8.40 0.52 113.63 7.45

8.0 0.74 113.70 3.29 1.46 5.20 -15.29 0.172 4.07 0.52 112.80 7.42

9.0 0.76 98.50 3.08 1.43 -6.37 -15.29 0.172 -4.27 0.53 97.33 7.18

10.0 0.79 84.30 2.45 1.33 -20.00 -15.04 0.177 -15.27 0.53 82.40 6.94

11.0 0.86 62.60 0.59 1.07 -34.50 -15.04 0.177 -27.37 0.53 69.40 6.64

12.0 0.87 62.70 -0.26 0.97 -40.00 -14.56 0.187 -31.00 0.59 63.63 6.29

13.0 0.88 52.60 -1.08 0.88 -52.10 -15.09 0.176 -41.67 0.64 52.57 5.80

14.0 0.89 45.10 -1.66 0.83 -61.60 -15.55 0.167 -49.77 0.69 43.13 5.59

15.0 0.92 39.20 -3.49 0.67 -70.50 -15.81 0.162 -58.03 0.71 33.47 5.35

16.0 0.94 33.50 -5.16 0.55 -78.00 -18.64 0.117 -64.67 0.75 27.23 4.93

17.0 0.94 28.40 -5.30 0.54 -84.20 -17.72 0.130 -71.07 0.77 20.77 4.97

18.0 0.93 24.90 -6.29 0.49 -88.30 -17.86 0.128 -75.90 0.79 15.87 3.70

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

ATF-331M4 Typical Scattering Parameters, VDS = 4V, IDS = 60 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB

0.5 0.81 -93.00 23.11 14.30 127.30 -28.64 0.037 53.90 0.37 -161.30 25.87

0.8 0.78 -120.00 19.90 9.89 112.40 -26.56 0.047 48.30 0.43 -169.07 23.23

1.0 0.77 -133.00 19.03 8.94 105.60 -25.68 0.052 46.80 0.45 -173.33 22.35

1.5 0.75 -152.00 15.74 6.12 93.43 -23.88 0.064 45.83 0.48 178.37 19.81

1.8 0.74 -160.00 14.50 5.31 87.90 -22.85 0.072 45.73 0.48 174.33 18.68

2.0 0.74 -164.00 14.24 5.15 84.80 -22.27 0.077 45.83 0.49 171.87 18.25

2.5 0.72 -171.00 11.29 3.67 77.77 -20.82 0.091 45.73 0.49 165.90 16.06

3.0 0.69 -175.00 10.21 3.24 71.63 -19.25 0.109 45.27 0.51 162.80 14.73

4.0 0.71 163.00 7.64 2.41 52.93 -17.65 0.131 35.20 0.51 138.63 11.41

5.0 0.73 150.00 5.93 1.98 41.40 -17.08 0.140 30.07 0.51 135.70 9.89

6.0 0.71 141.00 4.81 1.74 28.60 -16.48 0.150 22.23 0.52 118.43 8.31

7.0 0.73 124.00 3.75 1.54 14.30 -15.65 0.165 11.90 0.53 111.93 7.56

8.0 0.74 113.00 3.52 1.50 6.20 -15.24 0.173 7.07 0.53 111.10 7.52

9.0 0.76 97.90 3.29 1.46 -5.37 -15.14 0.175 -1.87 0.54 95.43 7.31

10.0 0.79 83.70 2.67 1.36 -18.90 -14.89 0.180 -13.17 0.54 80.60 7.10

11.0 0.86 62.10 0.83 1.10 -33.30 -14.89 0.180 -25.67 0.54 67.90 6.92

12.0 0.87 62.30 0.00 1.00 -38.80 -14.42 0.190 -29.70 0.60 61.93 6.50

13.0 0.88 52.20 -0.82 0.91 -50.80 -14.89 0.180 -40.67 0.65 51.07 5.93

14.0 0.89 44.70 -1.41 0.85 -60.10 -15.39 0.170 -48.97 0.69 41.93 5.76

15.0 0.92 39.00 -3.22 0.69 -69.20 -15.65 0.165 -57.33 0.72 32.27 5.53

16.0 0.94 33.30 -4.88 0.57 -76.60 -18.42 0.120 -64.27 0.75 26.33 5.19

17.0 0.94 28.20 -5.04 0.56 -82.80 -17.59 0.132 -70.77 0.77 19.97 5.22

18.0 0.93 24.70 -6.02 0.50 -86.90 -17.72 0.130 -75.60 0.79 15.07 3.90

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.50 0.38 0.316 0.7 0.06 22.33

0.90 0.42 0.314 28.9 0.06 19.23

1.00 0.43 0.314 35.5 0.06 19.1

1.50 0.47 0.321 65.7 0.05 16.63

1.80 0.5 0.329 81.9 0.05 15.86

2.00 0.52 0.336 91.9 0.05 14.96

2.50 0.56 0.358 114.3 0.04 13.73

3.00 0.61 0.386 133.2 0.04 12.58

4.00 0.7 0.454 162.3 0.03 10.78

5.00 0.79 0.53 -178.1 0.03 9.3

6.00 0.88 0.606 -165.1 0.02 8.32

7.00 0.97 0.67 -155.8 0.04 7.44

8.00 1.06 0.714 -147.4 0.07 6.59

9.00 1.16 0.728 -137.1 0.11 6.36

10.00 1.25 0.703 -121.9 0.19 5.27

Typical Noise Parameters, VDS = 4V, IDS = 60 mA

Figure 22. MSG/MAG and |S

vs.

Frequency at 4V , 60 mA.

MSG

MAG

FREQUENCY (GHz)

MSG/MAG and |S21|2 (dB)

02010515

-10

|S21|2

S and Noise Parameter Measurements

The position of the reference

planes used for the measurement

of both S and Noise Parameter

measurements is shown in Figure

23. The reference plane can be

described as being at the center

of both the gate and drain pads.

S and noise parameters are

measured with a 50 ohm

microstrip test fixture made with

a 0.010" thickness aluminum

substrate. Both source pads are

connected directly to ground via

a 0.010" thickness metal rib

which provides a very low

inductance path to ground for

both source pads. The inductance

associated with the addition of

printed circuit board plated

through holes and source bypass

capacitors must be added to the

computer circuit simulation to

properly model the effect of

grounding the source leads in a

typical amplifier design.

Gate

Pin 2

Source

Pin 3

Drain

Pin 4

Source

Pin 1

Reference

Plane

Microstrip

Transmission Lines

Figure 23. Position of the Reference Planes.

Noise Parameter Applications

Information

The Fmin values are based on a

set of 16 noise figure measure-

ments made at 16 different

impedances using an ATN NP5

test system. From these measure-

ments, a true Fmin is calculated.

Fmin represents the true mini-

mum noise figure of the device

when the device is presented

with an impedance matching

network that transforms the

source impedance, typically 50Ω,

to an impedance represented by

the reflection coefficient Γo. The

designer must design a matching

network that will present Γo to

the device with minimal associ-

ated circuit losses. The noise

figure of the completed amplifier

is equal to the noise figure of the

device plus the losses of the

matching network preceding the

device. The noise figure of the

device is equal to Fmin only

when the device is presented

with Γo. If the reflection coeffi-

cient of the matching network is

other than Γo, then the noise

figure of the device will be

greater than Fmin based on the

following equation.

NF = F

min

+ 4 R

|Γ

– Γ

| 2

Zo (|1 + Γ

|2)(1 - |Γ

|2)

Where Rn/Zo is the normalized

noise resistance, Γo is the opti-

mum reflection coefficient

required to produce Fmin and

is the reflection coefficient of the

source impedance actually

presented to the device.

The losses of the matching

networks are non-zero and they

will also add to the noise figure

of the device creating a higher

amplifier noise figure. The losses

of the matching networks are

related to the Q of the compo-

nents and associated printed

circuit board loss. Γo is typically

fairly low at higher frequencies

and increases as frequency is

lowered. Larger gate width

devices will typically have a

lower Γo as compared to nar-

rower gate width devices. Typi-

cally for FETs, the higher Γo

usually infers that an impedance

much higher than 50Ω is re-

quired for the device to produce

Fmin. At VHF frequencies and

even lower L Band frequencies,

the required impedance can be in

the vicinity of several thousand

ohms. Matching to such a high

impedance requires very hi-Q

components in order to minimize

circuit losses. As an example at

900 MHz, when air wound coils

(Q>100)are used for matching

networks, the loss can still be up

to 0.25 dB which will add di-

rectly to the noise figure of the

device. Using multilayer molded

inductors with Qs in the 30 to 50

range results in additional loss

over the air wound coil. Losses as

high as 0.5 dB or greater add to

the typical 0.15 dB Fmin of the

device creating an amplifier

noise figure of nearly 0.65 dB.

SMT Assembly

The package can be soldered

using either lead-bearing or lead-

free alloys (higher peak tempera-

tures). Reliable assembly of

surface mount components is a

complex process that involves

many material, process, and

equipment factors, including:

method of heating (e.g. IR or

vapor phase reflow, wave solder-

ing, etc) circuit board material,

conductor thickness and pattern,

type of solder alloy, and the

thermal conductivity and thermal

mass of components. Components

with a low mass, such as the

Minipak 1412 package, will reach

solder reflow temperatures faster

than those with a greater mass.

The recommended leaded solder

time-temperature profile is

shown in Figure 24. This profile

is representative of an IR reflow

type of surface mount assembly

process. After ramping up from

room temperature, the circuit

board with components attached

to it (held in place with solder

paste) passes through one or

more preheat zones. The preheat

zones increase the temperature

of the board and components to

prevent thermal shock and begin

TIME (seconds)

MAX

TEMPERATURE (°C)

100

150

200

250

Preheat

Zone Cool Down

Zone

Reflow

Zone

120 180 240 300

Figure 25. Lead-free Solder Reflow Profile.

Figure 24. Leaded Solder Reflow Profile.

TIME (seconds)

Peak Temperature

Min. 240°C

Max. 255°C

TEMPERATURE (°C)

150

100

221

200

250

300

350

60 9030 120 150 210180 270 300 330240 360

Preheat 130– 170°C

Min. 60s

Max. 150s

Reflow Time

Min. 60s

Max. 90s

evaporating solvents from the

solder paste. The reflow zone

briefly elevates the temperature

sufficiently to produce a reflow

of the solder.

The rates of change of tempera-

ture for the ramp-up and cool-

down zones are chosen to be low

enough to not cause deformation

of board or damage to compo-

nents due to thermal shock. The

maximum temperature in the

reflow zone (Tmax) should not

exceed 235°C for leaded solder.

These parameters are typical for

a surface mount assembly

process for the ATF-331M4. As a

general guideline, the circuit

board and components should

only be exposed to the minimum

temperatures and times the

necessary to achieve a uniform

reflow of solder.

The recommended lead-free

reflow profile is shown in

Figure 25.

Electrostatic Sensitivity

FETs and RFICs are electrostatic

discharge (ESD) sensitive de-

vices. Agilent devices are manu-

factured using a very robust and

reliable PHEMT process, however,

permanent damage may occur to

these devices if they are sub-

jected to high-energy electrostatic

discharges. Electrostatic charges

as high as several thousand volts

(which readily accumulate on the

human body and on test equip-

ment) can discharge without

detection and may result in

failure or degradation in perfor-

mance and reliability.

Electronic devices may be

subjected to ESD damage in any

of the following areas:

• Storage & handling

• Inspection

• Assembly & testing

• In-circuit use

The ATF-331M4 is an ESD

Class 1 device. Therefore, proper

ESD precautions are recom-

mended when handling, inspect-

ing, testing, and assembling these

devices to avoid damage.

Any user-accessible points in

wireless equipment (e.g. antenna

or battery terminals) provide an

opportunity for ESD damage.

For circuit applications in which

the ATF-331M4 is used as an

input or output stage with close

coupling to an external antenna,

the device should be protected

from high voltage spikes due to

human contact with the antenna.

A good practice, illustrated in

Figure 26, is to place a shunt

inductor or RF choke at the

antenna connection to protect

the receiver and transmitter

circuits. It is often advantageous

to integrate the RF choke into the

design of the diplexer or T/R

switch control circuitry.

Figure 26. In-circuit ESD Protection.

ATF-331M4 Minipak Model

NFET=yes

PFET=no

Vto=0.95

Beta=0.48

Lambda=0.09

Alpha=4

B=0.8

Tnom=27

Idstc=

Vbi=0.7

Tau=

Betatce=

Delta1=0.2

Delta2=

Gscap=3

Cgs=1.764 pF

Gdcap=3

Cgd=0.338 pF

Rgd=

Tqm=

Vmax=

Fc=

Rd=0.125

Rg=1

Rs=0.0625

Ld=0.0034 nH

Lg=0.0039 nH

Ls=0.0012 nH

Cds=0.0776 pF

Crf=0.1

Rc=62.5

Gsfwd=1

Gsrev=0

Gdfwd=1

Gdrev=0

Vjr=1

Is=1 nA

Ir=1 nA

Imax=0.1

Xti=

Eg=

Vbr=

Vtotc=

Rin=

Taumdl=no

Fnc=1 E6

R=0.17

C=0.2

P=0.65

wVgfwd=

wBvgs=

wBvgd=

wBvds=

wldsmax=

wPmax=

AllParams=

Advanced_Curtice2_Model

MESFETM1

GATE

SOURCE

INSIDE Package

Port

Num=1

C=0.28 pF

Port

Num=2

SOURCE

DRAIN

Port

Num=4

Port

Num=3

L=0.147 nH

R=0.001

C=0.046 pF

L=0.234 nH

R=0.001

MSub

TLINP

TL3

Z=Z2 Ohm

L=23.6 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL9

Z=Z2 Ohm

L=11 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

VAR

VAR1

K=5

Z2=85

Z1=30

Var

Egn TLINP

TL1

Z=Z2/2 Ohm

L=22 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL2

Z=Z2/2 Ohm

L=20 0 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL7

Z=Z2/2 Ohm

L=5.2 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL5

Z=Z2 Ohm

L=27.5 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

L=0.234 nH

R=0.001

L=0.281 nH

R=0.001

GaAsFET

FET1

Mode1=MESFETM1

Mode=Nonlinear

MSUB

MSub2

H=25.0 mil

Er=9.6

Mur=1

Cond=1.0E+50

Hu=3.9e+034 mil

T=0.15 mil

TanD=0

Rough=0 mil

ATF-331M4 Die Model

This model can be used as a design tool. It has been tested on ADS for various specifications. However, for

more precise and accurate design, please refer to the measured data in this data sheet. For future

improvements, Agilent reserves the right to change these models without prior notice.

MiniPak Package Outline Drawing

Ordering Information

Part Number No. of Devices Container

ATF-331M4-TR1 3000 7” Reel

ATF-331M4-TR2 10000 13” Reel

ATF-331M4-BLK 100 antistatic bag

1.44 (0.058)

1.40 (0.056)

Top view

Side view

Dimensions are in millimeteres (inches)

Bottom view

1.20 (0.048)

1.16 (0.046)

0.70 (0.028)

0.58 (0.023)

1.12 (0.045)

1.08 (0.043)

0.82 (0.033)

0.78 (0.031)

0.32 (0.013)

0.28 (0.011)

-0.07 (-0.003)

-0.03 (-0.001)

0.00

-0.07 (-0.003)

-0.03 (-0.001)

0.42 (0.017)

0.38 (0.015)

0.92 (0.037)

0.88 (0.035)

1.32 (0.053)

1.28 (0.051)

0.00

Solder Pad Dimensions

USER

FEED

DIRECTION COVER TAPE

CARRIER

TAPE

REEL

END VIEW

8 mm

4 mm

TOP VIEW

Note: Px represents Package Marking Code.

Device orientation is indicated by package marking.

Device Orientation for Outline 4T, MiniPak 1412

Tape Dimensions

5° MAX.

(CARRIER TAPE THICKNESS) T

(COVER TAPE THICKNESS)

5° MAX.

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

1.40 ± 0.05

1.63 ± 0.05

0.80 ± 0.05

4.00 ± 0.10

0.80 ± 0.05

0.055 ± 0.002

0.064 ± 0.002

0.031 ± 0.002

0.157 ± 0.004

0.031 ± 0.002

CAVITY

DIAMETER

PITCH

POSITION

1.50 ± 0.10

4.00 ± 0.10

1.75 ± 0.10

0.060 ± 0.004

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS W

8.00 + 0.30 - 0.10

0.254 ± 0.02 0.315 + 0.012 - 0.004

0.010 ± 0.0008

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

WIDTH

TAPE THICKNESS C

5.40 ± 0.10

0.062 ± 0.001 0.213 ± 0.004

0.0024 ± 0.00004

COVER TAPE

www.agilent.com/semiconductors

For product information and a complete list of

distributors, please go to our web site.

For technical assistance call:

Americas/Canada: +1 (800) 235-0312 or

(408) 654-8675

Europe: +49 (0) 6441 92460

China: 10800 650 0017

Hong Kong: (+65) 271 2451

India, Australia, New Zealand: (+65) 271 2394

Japan: (+81 3) 3335-8152(Domestic/International), or

0120-61-1280(Domestic Only)

Korea: (+65) 271 2194

Malaysia, Singapore: (+65) 271 2054

Taiwan: (+65) 271 2654

Data subject to change.

January 30, 2002

5988-4993EN