BSS138P,215\"\" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-M ounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

Trench MOSFET technology

AEC-Q101 qualified

1.3 Applications

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad

for drain 1 cm2.

[2] Pulse test: tp≤300 μs; δ≤0.01.

BSS138P

60 V, 360 mA N-channel Trench MOSFET

Rev. 1 — 2 November 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tamb =25°C--60V

VGS gate-source voltage Tamb =25°C--±20 V

IDdrain current Tamb =25°C;

VGS =10V [1] --360mA

RDSon drain - so urce on-st a te

resistance Tj=25°C;

VGS =10V;

ID= 300 mA

[2] -0.91.6Ω

Product data sheet Rev. 1 — 2 November 2010 2 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

2. Pinning information

3. Ordering information

4. Marking

[1] * = placeholder for manufacturing site code

5. Limiting values

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2S source

3 D drain

bb076

Table 3. Ordering information

Type number Package

Name Description Version

BSS138P TO-236AB plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

BSS138P AN*

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tamb =25°C-60V

VGS gate-source voltage Tamb =25°C-±20 V

IDdrain current VGS =10V [1]

Tamb =25°C-360mA

Tamb =100°C-230mA

IDM peak drain current Tamb =25°C;

single pulse; tp≤10 μs-1.2A

Product data sheet Rev. 1 — 2 November 2010 3 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Ptot total power dissipation Tamb =25°C[2] -350mW

[1] -420mW

Tsp =25°C - 1140 mW

Tjjunction temperature 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Source-drain diode

ISsource current Tamb =25°C[1] -360mA

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Fig 1. Normalized total power dissipation as a

function of ambient temperature Fig 2. Normalized continuous drain current as a

function of ambient temperature

Tamb (°C)

−75 17512525 75−25

017aaa001

120

Pder

(%)

Tamb (°C)

−75 17512525 75−25

017aaa002

120

Ider

(%)

Pder Ptot

Ptot 25°C()

------------------------100 %×=Ider ID

ID25°C()

--------------------100 %×=

Product data sheet Rev. 1 — 2 November 2010 4 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

IDM = single pulse

(1) tp= 100 μs

(2) tp=1ms

(3) tp=10ms

(4) tp= 100 ms

(5) DC; Tsp =25°C

(6) DC; Tamb =25°C; drain mounting pad 1 cm2

Fig 3. Safe operating area ; junc tion to ambient; continuous and peak drain currents as a function of

drain-source voltage

017aaa111

10−1

10−2

(A)

10−3

VDS (V)

10−1102

101

(1)

(2)

(3)

(4)

(5)

(6)

Limit RDSon = VDS/ID

Table 6. Thermal character istics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - 310 370 K/W

[2] - 260 300 K/W

Rth(j-sp) thermal resistance from

junction to solder point --115K/W

Product data sheet Rev. 1 — 2 November 2010 5 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from ju nc tio n to ambient as a function of p ulse du ration; typical values

FR4 PCB, mounting pad for drain 1 cm2

Fig 5. Transient thermal impedance from ju nc tio n to ambient as a function of p ulse du ration; typical values

017aaa015

tp (s)

10−3102103

10110−210−1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.25 0.2

0.1 0.05

0.02

0.01

017aaa016

tp (s)

10−3102103

10110−210−1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.25 0.2

0.1 0.05

0.02

0.01

Product data sheet Rev. 1 — 2 November 2010 6 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.01.

Table 7. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static chara cteristics

V(BR)DSS drain-source breakdown

voltage ID=10μA; VGS =0V 60--V

VGS(th) gate-source threshold

voltage ID=250μA; VDS =V

GS 0.9 1.2 1.5 V

IDSS drain leakage current VDS =60V; V

GS =0V

Tj=25°C --1μA

Tj= 150 °C --10μA

IGSS gate leakage current VGS =±20 V; VDS = 0 V - - 100 nA

RDSon drain-source on-state

resistance [1]

VGS =5V; I

D=50mA - 1 2 Ω

VGS =10V; I

D=300mA - 0.9 1.6 Ω

gfs forward

transconductance VDS =10V; I

D= 200 mA [1] - 700 - mS

Dynamic characteristics

QG(tot) total gate charge ID=300mA;

VDS =30V;

VGS =4.5V

- 0.72 0.8 nC

QGS gate-source charge - 0.14 - nC

QGD gate-drain charge - 0.24 - nC

Ciss input capacitance VGS =0V; V

DS =10V;

f=1MHz - 3850pF

Coss output capacitance - 7 - pF

Crss reverse transfer

capacitance -4-pF

td(on) turn-on delay time VDS =50V;

RL=250Ω;

VGS =10V;

RG=6Ω

- 26ns

trrise time -3-ns

td(off) turn-off delay time - 9 20 ns

tffall time - 4 - ns

Source-drain diode

VSD source-drain voltage I S=115mA; V

GS = 0 V 0.47 0.75 1.1 V

Product data sheet Rev. 1 — 2 November 2010 7 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

Tamb =25°CT

amb =25°C; VDS =5V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6. Output cha racteristics: drain current as a

function of drain-source voltage; typical

values

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

Tamb =25°C

(1) VGS =2.0V

(2) VGS =2.5V

(3) VGS =3.0V

(4) VGS =3.5V

(5) VGS =10V

ID=300mA

(1) Tamb = 150 °C

(2) Tamb =25°C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

VDS (V)

0.0 4.03.01.0 2.0

017aaa112

0.4

0.6

0.2

0.8

1.0

(A)

0.0

3.0 V

2.25 V

2.0 V

2.5 V

2.75 V

VGS = 3.5 V

017aaa113

10−4

10−5

10−3

(A)

10−6

VGS (V)

0.0 2.01.50.5 1.0

(2)(1) (3)

ID (A)

0.0 1.00.80.4 0.60.2

017aaa114

2.0

3.0

1.0

4.0

5.0

RDSon

(Ω)

0.0

(2)(1)

(3)

(5)

(4)

VGS (V)

0.0 10.08.04.0 6.02.0

017aaa115

2.0

4.0

6.0

RDSon

(Ω)

0.0

(1)

(2)

Product data sheet Rev. 1 — 2 November 2010 8 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

VDS >I

D×RDSon

(1) Tamb =25°C

(2) Tamb = 150 °C

Fig 10. Transfer chara cteristics: drain current as a

function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance

as a function of ambient temperature; typical

values

ID= 0.25 mA; VDS =V

(1) maximum values

(2) typical values

(3) minimum values

f=1MHz; V

GS =0V

(1) Ciss

(2) Coss

(3) Crss

Fig 12. Gate-source threshold voltage as a function of

ambient temperature Fig 13. Input, output and rever se transfer

capacitances as a function of drain-source

voltage; typical values

017aaa116

VGS (V)

0.0 3.02.01.0

0.4

0.2

0.6

0.8

(A)

0.0

(1) (2)

(2) (1)

Tamb (°C)

−60 180120060

017aaa022

1.2

0.6

1.8

2.4

0.0

aRDSon

RDSon 25°C()

-----------------------------

Tamb (°C)

−60 180120060

017aaa117

1.0

0.5

1.5

2.0

VGS(th)

(V)

0.0

(2)

(1)

(3)

017aaa118

VDS (V)

10−1102

101

102

(pF)

(2)

(1)

(3)

Product data sheet Rev. 1 — 2 November 2010 9 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

ID= 300 mA; VDS =30V; T

amb =25°C

Fig 14. Gate-source voltage as a function of gate

charge; typical va lues Fig 15. Gate charge waveform definitions

VGS =0V

(1) Tamb = 150 °C

(2) Tamb =25°C

Fig 16. Source current as a function of so urce-drain voltage; typical values

QG (nC)

0.0 0.80.60.2 0.4

017aaa119

2.0

3.0

1.0

4.0

5.0

VGS

(V)

0.0

003aaa50

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

VSD (V)

0.0 1.20.80.4

017aaa120

0.4

0.8

1.2

(A)

0.0

(1) (2)

Product data sheet Rev. 1 — 2 November 2010 10 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

Fig 17. Duty cycle definition

006aaa812

duty cycle δ =

Product data sheet Rev. 1 — 2 November 2010 11 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

9. Package outline

Fig 18. Package outline SOT23 (TO-236AB)

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2 0.95

1.9 2.5

2.1

0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

Product data sheet Rev. 1 — 2 November 2010 12 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

10. Soldering

Fig 19. Reflow soldering footprin t SOT23 (TO-236AB)

Fig 20. Wave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 1 — 2 November 2010 13 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BSS138P v.1 20101102 Product data sheet - -

Product data sheet Rev. 1 — 2 November 2010 14 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full dat a

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

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data sheet shall define the specification of the product as agreed between

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representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development .

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 2 November 2010 15 of 16

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BSS138P

60 V, 360 mA N-channel Trench MOSFET

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 2 November 2010

Document identifier: BS S13 8P

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13 Contact information. . . . . . . . . . . . . . . . . . . . . 15

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16