Ultralow Noise, Low Power
Current Amplifier
Data Sheet ADPD2210
Rev. A Document Feedback
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FEATURES
Ultralow noise, low power current amplifier
80 fA/√Hz (typical) noise floor
140 μA (typical) of supply current when active (EE = 0 μW/cm2)
100 nA (typical) of supply current in standby
Flexible output configuration
Optimized for pulsed systems
Nominal linear output: 240 μA
Space-saving 2 mm × 2 mm LFCSP package
APPLICATIONS
Photoplethysmography
Photodiode measurements
Small current pulsed amperometry
Any application requiring the ultralow noise amplification of
small currents
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The ADPD2210 is a low noise current amplifier designed to
allow the use of smaller photodiodes by amplifying sensor signal
currents by a factor of 24 while adding minimal noise. This
amplification provides the system sensitivity of a large photodiode
with the benefits of a smaller photodiode. A minimum linearity
of 60 dB allows accurate extraction of very small time variant
signals on top of large dc or low frequency offsets.
The ADPD2210 is optimized for pulse mode applications such
as wrist worn heart rate monitoring (HRM) or finger worn
pulse oximeter oxygen saturation (SpO2), where low power
consumption and rejection of ambient light is critical. In photodi-
ode applications, the ADPD2210 holds the sensor input to
within ±5 mV (typical) of the reference terminal, providing
near zero-bias voltage and allowing minimal dark current and
shot noise limited performance.
The ADPD2210 is designed for applications where power
conservation is critical. The ADPD2210 uses very little power,
typically 140 μA with no input to 954 μA at full scale. A power-
down pin places the ADPD2210 in standby when sensing is
inactive. This mode adds critical time for battery-powered
monitoring and can reduce battery costs in disposable applications
Using the ADPD2210 to provide sensor site amplification
reduces the effect of electromagnetic interference (EMI) in low
level wired interfaces, providing improved signal-to-noise ratio
(SNR) and rejection of interferer signals from nearby equipment.
The combination of low power, high SNR, and EMI immunity
enables low power system solutions not possible with traditional
small current sensors, such as photodiodes plus transimpedance
amplifiers (TIAs).
IN
PWDN
OUT
10nA
POWER-DOWN
LOGIC
BIAS
24 × CURRENT MIRROR
GND
VCC
REF
VCC – (2 × V
BE
)
12286-101
ADPD2210 Data Sheet
Rev. A | Page 2 of 15
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Typical Performance Characteristics ............................................. 6
Terminology .................................................................................... 10
Theory of Operation ...................................................................... 11
Overvie w ...................................................................................... 11
Recommended Configuration .................................................. 11
Sensitivity and SNR .................................................................... 11
Pulse Mode Operation ............................................................... 11
Applications Information .............................................................. 12
Powering the ADPD2210 .......................................................... 12
Exposed Pad Connection .......................................................... 12
Power-Down ............................................................................... 12
Reference Ouput ......................................................................... 12
Layout Considerations ............................................................... 12
Output Configuration ................................................................ 12
Accuracy in Clinical Applications ............................................ 12
3-Wire Voltage Configuration .................................................. 13
3-Wire Current Mode Configuration ...................................... 13
Evaluation Board ............................................................................ 14
Outline Dimensions ....................................................................... 15
Ordering Guide .......................................................................... 15
REVISION HISTORY
12/15—Rev. 0 to Rev. A
Changes to Ordering Guide .......................................................... 15
10/15—Revision 0: Initial Version
Data Sheet ADPD2210
Rev. A | Page 3 of 15
SPECIFICATIONS
VCC = 3.3 V TA = 25°C, unless otherwise noted. NSHOT is shot noise. EE is irradiance.
Table 1.
Parameter Symbol Test Conditions/Comments
Min Typ Max
Unit
GAIN
Current Gain βTLA V
BIAS = 0 V 23.7 24.2 24.8
DYNAMIC PERFORMANCE
Power-Down Recovery Time tRECOVER 1% full-scale (FS) output
100 nA to 1 μA 50 μs
1 μA to 10 μA 20 μs
Rise tRISE 10% to 90% FS (240 μA) 5 μs
Fall tFALL 90% to 10% FS (240 μA) 5 μs
Bandwidth IIN = 100 nA (dc), 100 nA (ac) 125 kHz
I
IN = 1 μA (dc), 100 nA (ac) 85 kHz
INPUT
Input Capacitance CIN_MAX 8 pF
Nominal Input Current IIN_MAX 10 μA
Input Offset Voltage VIN_REF ±5 mV
Reference Voltage REF VCC − 1.2 V
STATIC BIAS
Input Referred ISB 10 nA
Output Referred OSB 240 nA
NOISE PERFORMANCE
Current Noise Floor, Input Referred IIN I
IN < 10 nA 80 150 fA/√Hz
Current Noise, Input Referred IIN = 100 nA,1.5 × NSHOT 260 fA/√Hz
I
IN = 1μA, 1.15 × NSHOT 740 fA/√Hz
POWER AND SUPPLY
Supply Voltage VCC 1.8 3.3 5 V
Standby Current ISTANDBY PWDN > VIH 100 nA
Power Supply Rejection Ratio PSRR VCC = 1.8 V to 5.0 V, EE = 10 μA 25 nA/V
Supply Current Floor IFLOOR I
IN = 0 pA 140 μA
Supply Current ISUPPLY I
OUT = 10 μA 167 μA
I
OUT = 240 μA, ISUPPLY = IFLOOR + (3.3 × IOUT) 954 μA
OUTPUT CHARACTERISTICS
Maximum Output Voltage VOUT_MAX V
CC = 3.3 V, IOUT = 240 μA VCC − 0.75 V
Nominal Linear Output IOUT_FS V
CC = 3.3 V 240 μA
V
CC = 1.8 V 65 μA
Linearity TIA, VBIAS = 0 V, RFEEDBACK = 25 kΩ
I
IN = 200 nA to 4 μA 0.1 %
I
IN = 200 nA to 10 μA 0.3 %
Resistor IIN = 200 nA to 4 μA, RLOAD = 5kΩ 0.1 %
Peak Output Current IOUT_PEAK V
CC = 3.3 V 300 μA
V
CC = 1.8 V 65 μA
Output Capacitance COUT From OUT to GND 5 pF
Output Resistance ROUT From OUT to GND >5 GΩ
POWER-DOWN LOGIC
Input Voltage
High VIH V
CC − 0.2 V
Low VIL 0.2 V
Leakage Current
High IIH PWDN = 3.3 V 0.2 nA
Low IIL PWDN = 0 V −8.5 μA
ADPD2210 Data Sheet
Rev. A | Page 4 of 15
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage, VCC 6 V
Storage Temperature Range −65°C to +150°C
Operating Ambient Temperature Range −40°C to +85°C
Maximum Junction Temperature 150°C
Solder Reflow Temperature (<10 sec) 260°C
Current into IN Pin 1 mA
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θJA θ
JC Unit
2 mm × 2 mm LFCSP 84.4 12.32 °C/W
ESD CAUTION
Data Sheet ADPD2210
Rev. A | Page 5 of 15
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 PWDN
Power-Down Input. Tie the PWDN pin to ground for normal operation. Connecting this input to a logic high
enables standby mode. Do not leave this input floating.
2 OUT Current Output.
3 GND Ground.
4 REF Voltage Reference Output. REF is nominally 1.2 V below VCC. This pin is the matched voltage reference for the
current input and is typically tied to the cathode of a photodiode. Attachment to this terminal is not required.
5 IN Current Input (Sink). The voltage of the IN pin is forced within 5 mV of the reference input.
6 VCC Supply.
7 EPAD Exposed Pad. Connect the EPAD to GND.
NOTE
1. CONNECT THE
E
PAD TO GND.
3
GND
1
PWDN
2
OUT
REF
VCC
IN
ADPD2210
EPAD(7)
4
6
5
CURRENT
AMPLIFIER
12286-001
ADPD2210 Data Sheet
Rev. A | Page 6 of 15
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 3. Gain vs. TIA Bias
Figure 4. Gain vs. Temperature at 1 μA Input Current
Figure 5. Linearity Error vs. Input Current (Best Fit over Range)
Figure 6. Maximum Output Current vs. Output Bias
Figure 7. Supply Current vs. Output Current
Figure 8. Pulse Response, Rise/Fall
23.4
23.5
23.6
23.7
23.8
23.9
24.0
24.1
24.2
24.3
24.4
00.51.01.5
GAIN
TIA BIAS (V)
100nA
1µA
10µA
12286-003
TEMPERATURE (°C)
12286-004
24.12
24.14
24.16
24.18
24.20
24.22
24.24
24.26
24.28
24.30
–40 –20 0 20 40 60 80
GAIN
V
CC
= 5V
V
CC
= 3.3V
V
CC
= 2.5V
V
CC
= 1.8V
–0.25
–0.20
–0.15
–0.10
–0.05
0
0.05
0.10
0.15
0.20
0.25
0246810
LINEARITY ERROR (%)
INPUT CURRENT (µA)
0µA TO 4µA
0µA TO 10µA
12286-005
0
01.01.50.5 2.0 3.02.5 3.5 4.0 4.5
100
200
300
400
500
600
OUTPUT CURRENT AT 10µA INPUT (µA)
OUTPUT BIAS (V)
12286-007
V
CC
= 1.8V
V
CC
= 5V
V
CC
= 3.3V
V
CC
= 2.5V
0
.2
0
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
100 200 300 400 500
SUPPLY CURRENT (mA)
OUTPUT CURRENT (µA)
V
CC
= 5V
V
CC
= 3.3V
V
CC
= 2.5V
V
CC
= 1.8V
12286-008
–50 0 50 100
NORMALIZED OUTPUT
TIME (µs)
10µA
INPUT
100nA
1µA
12286-009
Data Sheet ADPD2210
Rev. A | Page 7 of 15
Figure 9. Bandwidth/Peaking
Figure 10. Linearity Error vs. Input Current (TIA) at Various Temperatures
Figure 11. Linearity Error vs. Input Current (TIA) at Various Supplies
Figure 12. Normalized Offset vs. Temperature
Figure 13. Noise Bandwidth/Peaking
Figure 14. Supply Current in Power-Down vs. Temperature
100 1k 10k 100k 1M
NORMALIZED RESPONSE (dB)
FREQUENCY (Hz)
100nA
1µA
10µA
12286-010
–14
–12
–10
–8
–6
–4
–2
0
2
–0.10
–0.08
–0.06
–0.04
–0.02
0
0.02
0.04
0.06
0.08
0.10
01234
LINEARITY ERROR (%)
INPUT CURRENT (µA)
–40°C
+25°C
+85°C
12286-011
–0.10
–0.08
–0.06
–0.04
–0.02
0
0.02
0.04
0.06
0.08
0.10
01234
LINEARITY ERROR (%)
INPUT CURRENT (µA)
12286-014
VCC = 5V
VCC = 3.3V
VCC = 2.5V
VCC = 1.8V
–2.0
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
2.0
–40–200 20406080
NORMALIZED OFFSET (mV)
TEMPERATURE (°C)
V
CC
= 5V
V
CC
= 3.3V
V
CC
= 2.5V
V
CC
= 1.8V
12286-013
0.01
0.1
1
10
10 100 1k 10k 100k
NOISE POWER (pA/√Hz)
FREQUENCY (Hz)
–40°C
+25°C
+85°C
12286-113
12286-102
0
10
20
30
40
50
60
70
80
90
100
–40–200 20406080
SUPPLY CURRENT (nA)
TEMPERATURE (°C)
ADPD2210 Data Sheet
Rev. A | Page 8 of 15
Figure 15. Reference Voltage vs. Temperature
Figure 16. −3 dB Bandwidth vs. Input Current
Figure 17. Full-Scale Output Current vs. PWDN Input
Figure 18. Power-Down Recovery, 100 nA to 500 nA
Figure 19. Power-Down Recovery, 1 μA to 10 μA
Figure 20. Static Bias Current Referred to Output (RTO) vs. Temperature
TEMPERATURE (°C)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
–40 1020304050–20–30 –100 607080
REFERENCE VOL
T
AGE (V)
V
CC
= 5.0V
V
CC
= 3.3V
V
CC
= 2.5V
V
CC
= 1.8V
12286-018
60
70
90
110
130
80
100
120
140
0.1 1 10
–3dB BANDWIDTH (kHz)
INPUT CURRENT (µA)
12286-019
–50
0
50
100
150
200
250
300
0123
FULL-SCALE OUTPUT CURRENT (µA)
PWDN INPUT (V)
12286-117
0
2
4
6
8
10
12
14
0 1020304050
OUTPUT CURRENT (µA)
TIME (µs)
500nA
100nA
200nA
300nA
400nA
150nA
12286-118
1µA
–50
0
50
100
150
200
250
300
0 1020304050
OUTPUT CURRENT (µA)
TIME (µs)
10µA
8µA
6µA
4µA
2µA
12286-119
12286-104
50
100
150
200
250
300
–40 –20 0 20 40 60 80
ST
A
TIC BIAS CURRENT RTO (nA)
TEMPERATURE (°C)
V
CC
= 5V
V
CC
= 3.3V
V
CC
= 2.5V
V
CC
= 1.8V
Data Sheet ADPD2210
Rev. A | Page 9 of 15
Figure 21. Noise Referred to Input (RTI) vs. Input Current
Figure 22. Power Supply Rejection Ratio vs. Frequency
Figure 23. Output Current vs. Input Current
INPUT CURRENT (µA)
12286-012
100
10
1
0.1
0.01 0.1 1 10
NOISE RTI (pA/
√
Hz)
0nA TO 300nA
300nA TO 4µA
EXTRAPOLATED
0
5
10
15
20
25
30
100 1k 10k 100k
POWER SUPPLY REJECTION R
A
TIO (nA/V)
FREQUENCY (Hz)
V
CC
= 5V
V
CC
= 3.3V
V
CC
= 2.5V
V
CC
= 1.8V
12286-103
12286-023
0
50
100
150
200
250
300
350
400
450
500
0 5 10 15 20
OUTPUT CURRENT (µA)
INPUT CURRENT (µA)
V
CC
= 5V
V
CC
= 3.3V
V
CC
= 2.5V
V
CC
= 1.8V
ADPD2210 Data Sheet
Rev. A | Page 10 of 15
TERMINOLOGY
Amperometry
Amperometry is a technique used in chemistry and biochemis-
try to detect ions in a solution by measuring very small currents
between polarized electrodes. Methods of amperometry include
direct, pulsed, and amperometric titration, where a substance
(titrate) known to react with the analyte (the substance being
measured) is added in measured quantities and the effect on the
ionic concentration of the analyte is measured.
Dark Current
Dark current is the current flowing in a photodiode with no light
incident upon the diode junction. In reversed bias operation,
the dominant source of dark current is current generated by the
bias voltage across the bulk resistance of the semiconductor
material (shunt resistance). In zero bias operation, thermal
generation of charge carriers in the depletion region becomes
the dominant source of dark current.
Linearity
Linearity is a measure of the deviation from an ideal change in
output current relative to a change in input current. Linearity is
specified as the deviation from a best straight line fit of the
amplifier current output over a specified range of input current.
Linearity is a critical specification in photoplethysmography
due to the requirement of sensing small ac signals impressed
upon large dc offsets.
Noise Equivalent Power (NEP)
Noise equivalent power is the amount of incident light power
on a photo detector, which generates a photocurrent equal to
the total noise current of the sensor, expressed as A/√Hz. The
NEP is the fundamental baseline of the detectivity of the optical
sensor.
Offset
Offset in the ADPD2210 is defined as the differential voltage
between the reference output and the input of the ADPD2210.
The ADPD2210 holds the input terminal voltage to within
±5 mV (typical) of the reference terminal.
Photoconductive Mode
Photoconductive operation of a photodiode occurs when
photons entering the silicon generate electron/hole pairs that
are swept by the electric field to the opposite terminal. These
carriers are presented at the terminals of the photodiode as a
current proportional to the luminous flux incident on the
junction of the photodiode.
Photoplethysmography
Photoplethysmography uses light to measure biological functions
by sensing changes in the absorption spectra of soft tissue
caused by differences in hemoglobin volume and composition.
Common applications of photoplethysmography include
transmission SpO2 pulse oximetry and reflectance HRM.
Shot Noise
Shot noise is a statistical fluctuation in any quantized signal
such as photons of light and electrons in current. The magni-
tude of the shot noise is expressed as a root mean square (rms)
noise current. Shot noise is a fundamental limitation in photo
detectors and takes the form of
Shot noise = √(2qIPDBW)
where:
q is the charge of an electron (1.602 × 10−19 Coulomb).
IPD is the photodiode current.
BW is the bandwidth.
Static Bias
The ADPD2210 has an internal 10 nA bias that is used to linearize
the input current mirror at low input levels and prevents transient
reverse bias of the amplifier input stage. This bias is fixed and
appears on the output as a 240 nA typical offset.
Thermal (Johnson) Noise
All resistors generate a noise component based on temperature,
including the shunt resistance in a photodiode due to genera-
tion of carriers within the bulk semiconductor. The magnitude
of this generated noise current is calculated as follows:
Photodiode Thermal Noise Current = RSH
fkT4
where:
k = 1.38 × 10−23 joules per °K. k is the Boltzmann constant.
T is the absolute temperature in degrees Kelvin (273 K = 0°C).
Δf is the noise measurement bandwidth.
RSH is the shunt resistance of the photodiode
Thermal noise generated in the bulk semiconductor outside the
depletion region of the photodiode appears as a broadband ac
signal. Thermal noise generated within the depletion region
appears as a dc current but is typically an insignificant compo-
nent of dark current relative to the bias/shunt resistance
component.
Data Sheet ADPD2210
Rev. A | Page 11 of 15
THEORY OF OPERATION
OVERVIEW
The ADPD2210 is an ultralow noise current amplifier optimized
for wearable photoplethysmography applications and featuring
very low power consumption. Essentially a current mirror with
gain, the ADPD2210 is designed to make sensor signal currents
appear 24 times larger while adding minimal noise. A laser
trimmed linearity of greater than 60 dB allows the extraction of
very small time variant signals with large dc or low frequency
components. This noise and linearity performance allows small
photodiodes to achieve performance comparable to much larger
diodes.
RECOMMENDED CONFIGURATION
In the recommended configuration, a photodiode is connected
across the REF and IN pins of the ADPD2210. The REF pin is
driven by a servo loop to stay within typically ±5 mV of the
IN pin, regardless of current generated by the optical power
incident on the photodiode junction. The current occurring at
the anode of the photodiode is sourced to the IN pin and drives
the first stage of the precision current mirror. A 10 nA static
bias is applied to the current mirror to linearize its transfer
curve at low currents and prevent the output from attempting to
go below 0 V due to unavoidable offsets.
Figure 24 shows a simplified pulse oximeter design using the
ADPD2210.
SENSITIVITY AND SNR
SNR is a measure of the ability of the sensor to separate the
signal of interest from spurious signals that occur from the
surrounding environment of the device, such as ambient light,
electromagnetic interferers, and circuit noise.
Typically, system SNR is improved by using a photodiode with
large surface area because signal increases linearly with area
while noise increases as a root sum of the square of the area.
Capacitance of the photodiode increases with area and carrier
transit time, reducing sensor bandwidth. Bandwidth can be
increased by applying a bias voltage across the diode, but this
increases dark current and, therefore, noise.
Operating at near zero-bias voltage in photoconductive mode,
the photodiode generates virtually no dark current component
except for that caused by the offset of the servo loop across the
shunt resistance of the diode and the thermal noise component
in the depletion region of the photodiode. This sets the fundamen-
tal limit of the signal resolution to the shot noise of the 10 nA
internal bias, 80 fA/√Hz relative to the input, which appears at
the output of the current amplifier and establishes the noise
floor of the ADPD2210.
PULSE MODE OPERATION
The ADPD2210 is optimized for battery-powered operation by
the inclusion of a power down pin (PWDN). When sensing is
inactive, the ADPD2210 can be quickly switched into standby
mode, reducing supply current to ~100 nA during dark periods
for pulsed or mode locked applications where the light source is
cycled to improve ambient light rejection and reduce transmit-
ter power consumption.
For multiple wavelength systems, sequentially pulsing the optical
emitters removes the need for multiple narrow bandwidth sensors.
For both multiple wavelength (SpO2) and single wavelength
(HRM) systems, pulsed operation can provide significant power
savings for battery-powered systems. Pulsed mode operation
provides a calibration signal that is necessary to compensate for
ambient light diffused throughout the tissue, which can be
extracted by measuring the sensor output while the system
emitters are off. Advanced algorithms can then extract the
signal of interest from dc offsets, noise, and interferer signals
such as motion artifacts.
Figure 24. Simplified Pulse Oximeter Design
REF
IN
PWDN
10nA
POWER-DOWN
LOGIC
24 × CURRENT MIRROR
OUT
TIA ADC
R
F
MICROCONTROLLER
LED DRIVER
DISPLAY
BIAS
PHOTODIODE
900nm660nm
ASIC
ADPD2210
12286-027
V
GND
VCC
GND
ADPD2210 Data Sheet
Rev. A | Page 12 of 15
APPLICATIONS INFORMATION
POWERING THE ADPD2210
The ADPD2210 is powered from a single positive 1.8 V to 5 V
supply, although performance below 2.5 V is limited by the
reduced dynamic range of the device. Above the quiescent
current (140 μA), the supply current has a linear relationship to
the output current: ISUPPLY = IFLOOR + (3.3 × IOUT). The ADPD2210
features a 25 nA/V (typical) PSRR, but proper circuit layout and
bypassing is recommended to provide maximum sensitivity,
especially in designs where the ADPD2210 may share reference
nodes with transmitters in pulse mode applications.
EXPOSED PAD CONNECTION
The exposed pad (EPAD) on the ADPD2210 acts as an electri-
cal, thermal, and mechanical platform for the amplifier and
must be connected to a quiet GND. External cooling is not
required due to the extremely low power consumption of the
ADPD2210. Analog Devices, Inc., recommends removal of
active traces beneath the device to eliminate potential coupling
of external signals into the sensitive internal nodes of the
ADPD2210.
POWER-DOWN
The power-down pin does not have an internal pull-up/pull-down
circuit and must be connected to an external logic level for
proper operation.
In the recommended configuration and when it is not in power-
down mode, the ADPD2210 presents an approximate 90 Ω load
to the photodiode anode. This load limits the photovoltaic
effect from a silicon photodiode at full scale to approximately
900 μV. In the power-down state, the ADPD2210 presents a
high impedance at the IN pin and the photovoltaic effect from a
photodiode is limited to the open-circuit voltage of the
photodiode.
In applications where the ADPD2210 is fed from a current source,
initiation of power-down mode causes the voltage at the IN pin
to slew up to the compliance voltage of the current source. The
rate at which the voltage slews depends on the current sourced
and capacitance at the IN pin. If the compliance voltage of the
current source is significantly higher than the VCC − 2 × VBE
voltage of the IN pin, the ADPD2210 requires additional settling
time to come out of the power-down state. VBE is the base
emitter voltage.
REFERENCE OUPUT
The REF pin is sensitive to loading and is not intended to drive
more than 1 μA. When the ADPD2210 REF output is connected
to the cathode of the photodiode, loading of the REF pin is limited
to the offset voltage (±5 mV), divided by the shunt resistance
(typically >1 GΩ) of the photodiode.
In applications where the REF output is used to provide an
external reference or a guarding voltage, the REF output must
be buffered. Failure to buffer the REF pin may adversely affect
linearity above 4 μA.
LAYOUT CONSIDERATIONS
Working with very low currents requires special attention in
layout to prevent error currents due to leakage, especially in
instrumentation applications where the ADPD2210 may be
located at a distance from the current source. In applications
that rely on dynamic signals, parasitic capacitance must be
controlled as seemingly insignificant capacitance becomes
problematic with nanoampere scale signals.
OUTPUT CONFIGURATION
The output of the ADPD2210 allows different configurations
depending on the application. The current gain of the ADPD2210
reduces the effect of surrounding interferers but, for best perfor-
mance, careful design and layout is still necessary to achieve
best performance. The effect of capacitance on the output must
be considered carefully regardless of configuration as bandwidth
and response time of the system can be limited simply by the
time required to charge and discharge parasitics.
Because the ADPD2210 is effectively a current source, the
ADPD2210 output voltage drifts up to its compliance voltage,
approximately 1.2 V below VCC, when connected to an inter-
face that presents a high impedance. The rate of this drift is
dependent on the ADPD2210 output current, parasitic capaci-
tance, and the impedance of the load. This drift can require
additional settling time in circuits following the ADPD2210 if
they are actively multiplexing the output of the ADPD2210 or
presenting a high impedance due to power cycling. For multi-
plexed systems, a current steering architecture may offer a
performance advantage over a break-before-make switch matrix.
ACCURACY IN CLINICAL APPLICATIONS
Even with perfectly calibrated electronics, it is important to
note there is no absolute in photoplethysmography measure-
ments because they are affected by other variables, including
high levels of carboxyhemoglobin or methemoglobin, density of
other chromophores such as melanin, and conditions that may
affect perfusion such as peripheral artery disease, shock, or
hypothermia. It is important that photoplethysmography, though
well suited for real-time monitoring, be supported in a clinical
environment with more accurate laboratory procedures such as
blood gas analysis.
Data Sheet ADPD2210
Rev. A | Page 13 of 15
3-WIRE VOLTAGE CONFIGURATION
The ADPD2210 can be used in a minimal 3-wire voltage
configuration, offering a compact solution with very few
components (see Figure 25). A shunt resistor (RS) sets the
transimpedance gain in front of the analog-to-digital converter
(ADC). This configuration allows flexibility in matching the
ADC converter full-scale input to the full-scale output of the
ADPD2210. The dynamic range of the interface is limited to
the compliance voltage of the ADPD2210.
No additional amplification is needed prior to the ADC. Response
time at the lower end of the range is limited by the ability of the
output current to charge the parasitic capacitance presented to
the output of the ADPD2210.
3-WIRE CURRENT MODE CONFIGURATION
When used in the 3-wire current mode configuration with a
photodiode (see Figure 25), the ADPD2210 is insensitive to load
resistance and can be used when the signal processing is further
from the sensor. EMI noise and shielding requirements are
minimized; however, cable capacitance has a direct effect on
bandwidth, making the 3-wire current mode configuration a
better choice for unshielded interfaces. The CF value must be
chosen carefully to eliminate stability and bandwidth degrada-
tion of the ADPD2210. Large capacitance around the feedback
loop of the TIA has a direct effect on the bandwidth of the system.
Figure 25. ADPD2210 Used in 3-Wire Short Cable Voltage Mode Configuration with a Shunt Resistor
Figure 26. ADPD2210 Used in 3-Wire Current Mode Configuration with a TIA
ADPD2210
CURRENT
AMPLIFIER
REF
IN ADC AND
MICROPROCESSOR
3.3V
3.3V
R
S
GND
OUT
VCC
12286-021
VCC
OUT
GND
3.3V
CF
RF
TIA
3.3V
ADPD2210
CURRENT
AMPLIFIER
REF
IN ADC AND
MICROPROCESSOR
0V TO VCC –0.75
12286-022
ADPD2210 Data Sheet
Rev. A | Page 14 of 15
EVALUATION BOARD
Figure 27 shows the evaluation board schematic. Figure 28 and Figure 29 show the evaluation board layout for the top and bottom layers,
respectively.
Figure 27. Evaluation Board Schematic
Figure 28. Evaluation Board Layout, Top Layer
Figure 29. Evaluation Board Layout, Bottom Layer
1
THE PWDN PIN MUST BE BIASED TO V
IL
FOR NORMAL OPERATION AND V
IH
FOR STANDBY.
2
R1D IS NOT NORMALLY INSTALLED BUT CAN BE POPULATED WITH A LOAD RESISTOR TO
GENERATE THE VOLTAGE OUTPUT.
ADPD2210
1
2
3
5
6
PWDN
OUT
GND
VCC
IN
REF
EPAD
V
POG
R1D
DNI
R2D
100kΩ
C2D
1µF
C1D
0.01µF
D1D
4
12286-024
12286-025
12286-026
Data Sheet ADPD2210
Rev. A | Page 15 of 15
OUTLINE DIMENSIONS
Figure 30. 6-Lead Lead Frame Chip Scale Package [LFCSP_UD]
2 mm × 2 mm Body, Ultra Thin, Dual Lead
(CP-6-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Descriptions Package Option
ADPD2210ACPZ-R7 −40°C to +85°C 6-Lead Lead Frame Chip Scale Package [LFCSP_UD] CP-6-3
ADPD2210ACPZ-RL −40°C to +85°C 6-Lead Lead Frame Chip Scale Package [LFCSP_UD] CP-6-3
EVALZ-ADPD2210 Evaluation Board
1 Z = RoHS Compliant Part.
1.70
1.60
1.50
0.425
0.350
0.275
TOP VIEW
6
1
4
3
0.35
0.30
0.25
BOTTOM VIEW
PIN 1 INDEX
AREA
SEATING
PLANE
0.60
0.55
0.50
1.10
1.00
0.90
0.20 REF
0.05 MAX
0.02 NOM
0.65 BSC
EXPOSED
PAD
PIN 1
INDICATOR
(R 0.15)
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
02-06-2013-D
0.15 REF
2.10
2.00 SQ
1.90
0.20 MIN
©2015 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D12286-0-12/15(A)
