2N3700UB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: * General purpose * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3700UBJ) * JANTX level (2N3700UBJX) * JANTXV level (2N3700UBJV) * JANS level (2N3700UBJS) * JANSR level (2N3700UBJSR) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features * Radiation testing (total dose) upon request * * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 4500 Reference document: MIL-PRF-19500/391 Benefits * Qualification Levels: JAN, JANTX, JANTXV, JANS and JANSR * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 37.5OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2010 Rev. G TC = 25C unless otherwise specified Symbol VCEO VCBO VEBO IC PT PT RJA TJ TSTG Rating 80 140 7 1 0.5 3.08 1.16 6.63 325 Unit Volts Volts Volts A W mW/C W mW/C C/W -65 to +200 C SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3700UB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 30 mA Typ Max Units Volts 80 Collector-Base Cutoff Current ICBO1 VCB = 140 Volts 10 A Collector-Emitter Cutoff Current ICES1 VCE = 90 Volts 10 nA Collector-Emitter Cutoff Current ICES2 VCE = 90 Volts, TA = 150C 10 A Emitter-Base Cutoff Current IEBO1 VEB = 7 Volts 10 A Emitter-Base Cutoff Current IEBO2 VEB = 5 Volts 10 nA On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat VCEsat1 VCEsat2 Test Conditions IC = 150 mA, VCE = 10 Volts IC = 0.1 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 1 A, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts TA = -55C IC = 150 mA, IB = 15 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Min 100 50 90 50 15 40 Test Conditions VCE = 10 Volts, IC = 50 mA, f = 20 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCB = 10 Volts, IE = 10 mA, f = 79.8 MHz VCE = 10 Volts, IC = 100 A, f = 200 Hz, Rg = 1 k Min Typ Max 300 200 Units 200 Volts 1.1 0.2 0.5 Volts Max Units Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Collector Base time constant rb'CC Noise Figure NF Typ 5 20 80 400 12 pF 60 pF 400 ps 4 dB 30 ns Switching Characteristics Saturated Turn-On Time Copyright 2010 Rev. G tON +tOFF SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2