FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a+ + * | i x S _ & & We (Te = 25C) * m 4) tt &) & | Gk Von. Icpo BURAK | di itt Xa SA hee 4 FR] hfe ins iy ie fab Cos hie ane hy # (Vv) (uA) [Vea(v) - Vee(V)fc(mA) teat i) Aye | (0) |(x10*)| (wt) | (Me) | (PF) | (O | . Si. TMe!| 1100 smA | soo | is | 3 | 750 | 10 | 200 | 5 "| 95 | Soop | 100 | {site} 30 | 1 | 2% | 10/6 } 1 | 6 | 3 (MER aSBe uv, oa) 700 *| 0.7 | $56, |205c {7 | 9 1 | 3 | wo] 6 | 4 js -3 | moo *] o.7 | $ Eee lease sie} 6 | 4 | 4a | 2W.] avs [ima | 30 | 50 | 10 | 1A | | Pee aa vce 28V, P,=10W) in} | 4 | 3 | 150 [831 zs [ 50 | 20 [is~20| 10 | 70 | 10 | 70 Fg eo <= 18v, Pi=zsom) | 2000"| 2.5 |129 | 40 | 3 | 250 [28] 75 | 100 | 20 [15-200] 10 | 100 | 10 | 100 | {2 Sdhs ve a, Pi=6t0mw) | 2000" 129 " 4 | 4 | 1.2A} 2M) 175 | ama | 30 [15~200] 10 | 1A | (f= 600MHz, Vee=18V, Pi=2W) 4) 7 To Pao 3 | 150 288 475 | so | 20 |us~20) 10 | 70 | 20 {2 Fr atte: Vee=18V, Pi=250mW) | 2000") 2.5 | 129 " 40 3 | 250 : 75M 175 | 100 | 20 | ~2001 10 | 100 10 | 100 | ff 2 Ge Veo =18V, P:630mW) aoe | 129 | & | 3 | 300 |peye, 175 | 0.1 | 30 | 80 | 10 | 100 15 | 50 [Ren sn oe Som) 2200| 2.5 | | 129 | [as | 4 | 30 | 250 | 200 | sna; go | 100 | 6 | 6 | 6 | ~6 (% = 333) L 10007] psoMee) (50C) | 1065|= 7) RFPA iT) 1000] 5 | 1a |) 1s | 5 | 100 ]as~20l 15 | 200 . Lb | | 1046] | PA siTMe) 1000 | 6 | 3A |) 150 | 100 | 100 | 8 5 | 2A] 5 | 100 <15yS | 4 Ww 35/102) | 1047/h | RF si.eP] 30 | 3 | 15 | 150 | 125 { 10 | 30 | 10] 6 | 1 | 6 | -1 ) 650*| Geer] 30 lise] | yy 1048) = # Si.Me| 200} 6 | 50 | 600 | 150 | 1 | 100 | 9 | 10 | 25 | a0 | -10 | | | [ sm") 3s 84B 1049 : | | ee ee [ | 1050|- #] PA Si. TMe 300 | 6 | 1a | fo.) 150 ima | 150 | 90 | 5 | 300 | 5 | 300 _ 5) 50 [102 = * wl) * | > a | 450 | 6 | 7A few | 150 Jima] 30 | 9 | 5 | TA f 5 j-2Aj; | | 8 280 102) | 1052] ef-t Si.EP] 75 | 5 | 1a | 800 | 175 | 0.5 | 50 | 40 | 1 | 500 fen SB0RS t077< 7008 tk. wB, | yy 1053) 7 > | 7% | 5 | 0 | eo | 175 | 0.2 | 40 | 50 1 | 900 gon son, fer 60ns - | | 848 | 1054] | RF.LN | 35 | 3 | 50 | 10 | as [os | 1 | o | 6 | 3 NF 348 gv. lmA) 700 * 30 * acl st} | | 7a (BY w fw lsap |e ausernes tT [ml [sural a0 [5 53 | 20 | wo | Set hea pe si.EP| so | 3.5 | 5 | 500 | SW 5-700 men, Pi=2W) aw) |. , 133 yoy | 80 3.5 | 5 LA GeV y=700MHe, Pi-4w) | | fst | 4 10 | 50 153 | * 5~ sf 4 | 1A. : | -t Te} too | | 267 |28870, | 4 4 [1a | a [. ff 8 * 100 7 | 268 SE. 4 2 50 nes toff<12 nS 5. | i 84B | 1 lo [ [ee east <ions Toh [ech