Silicon Controlled Rectifiers 2N1 794-1804; 2N45/1=45// U H ao Dim. Inches Millimeter B Minimum Maximum Minimum Maximum Notes = J | | A --- --- --- --- 1 c B 1.050 1.060 26.67 26.92 Te C --- 1.161 --- 29.49 AS D .197 .827 20.24 21.01 Re N E 276 .286 .701 7.26 LLY f Fo .948 -- 24.08 P q M G 425 499 10.80 12.67 2 | H --- -900 --- 22.86 Dia. K Jo 225 275 6.48 6.99 _1F a 1.750 9 = 44,45 G M .370 .380 9.40 9.65 A ED N 2135 223 5.41 5.66 Dia. | P .065 .075 1.65 1.91 Dia. TO208AD R215 225 5.46 5.72 (T083) S 290 315 7.37 8,00 T 014 .530 13.06 13.46 Note 1: 1/220 UNF3A Note 2: Full thread within 2 1/2 threads U 089 099 2.26 2.51 Microsemi Microsemi VDRM/VRRM Catalog Number Catalog Number 2N4371 100 . 2N1794 2N4372 200 e High dv/dt-100 V/usec. 2N1795 250 oN1796 300 e 1600 Amperes surge current 2N1797 2N4373 400 e Low forward on-state voltage 2N1798 500 Nig00 2N4574 oo Package conforming to TO208AD outline 2N1801 720 e Economical for general purpose 2N1802 2N4375 800 icati oN1803 900 phase control applications 2N1804 2N4376 1000 2N4377 1200 Electrical Characteristics Max. RMS on-state current i T(RMS) 110 Amps Te = 87C Max. average on-state cur. yav) 70 Amps Tc = 87C Max. peak on-state voltage 1.6 Volts ITM = 220 A(peak) Max. holding current 1M 200 mA Max. peak one cycle surge current ITSM: 1600 A Te = 87C, 60 Hz Max. |2t capability for fusing I2 10,624A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range TJ 65C to 125C Storage temperature range TSTG 65C to 150C Maximum thermal resistance Reuc 0.40C/W Junction to case Typical thermal resistance (greased) Recs 0.20C/W Case to sink Mounting torque 100-130 inch pounds Weight 3.24 ounces (91.8 grams) typical COLORADO 800 Hoyt Street 10-600 Rev. IR Z Broomfield, CO. 80020 icrosemi x6 FAX: (303) 466-3775 www.microsemi.com2N1/941804; 2N45/1-45// Switching Critical rate of rise of on-state current (note 1) di/dt 100A /usec. Ty = 125C Typical delay time (note 1) td 3.0 usec. 3 Typical circuit commuted turn-off time (note 2) tq 100 usec. TJ = 125C Note 1: 'TM = 50A, YD = VDRM. YGT = 12V open circuit, 20 ohm0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VeT 3.0V Ty = 25C Max. nontriggering gate voltage Ve 0.25V Ty = 125C Max. gate current to trigger | GT 100mA TJ = 25C Max. peak gate power PGM 15W Average gate power PG(AV) 3.0W tp = 10 usec. Max. peak gate current | GM 4.0A Max. peak gate voltage (forward) VoM 10V Max. peak gate voltage (reverse) VoM 5.0V Blocking Max. leakage current IDRM, 'RRM 10mA Ty =125C & VDRM,VRRM Max. reverse leakage IRRM, 'DRM 100 pA Wy =25C & VRRM,VRRM Critical rate of rise of offstate voltage dv/dt 100V/usec. Ty =125C 10-6-00 Rev. IR2N1/941804; 2N45/1-45// Figure 1 Typical Forward OnState Characteristics 1 8000 6000 1000 800 600 400 200 100 80 60 40 20 Instantaneous OnState Current Amperes 10 8 1.2 16 2.0 24 28 32 3.6 Instantaneous OnState Voltage Volts Figure 2 Forward Current Derating & 130 120 110 Ss 100 St 90 S IN 80 Ny 70 60 301] 60| 907] _hkor_|1s0 0 10 20 30 40 50 60 70 80 90 100 Average OnState Current Amperes Maximum Allowable Case Temperature Junction to Case Figure 3 Maximum Power Dissipation #105 90 120 4180 op /|/ 60 30 ZL | Ye Y Maximum Power Dissipation Watt 0 0 10 20 30 40 50 60 70 80 90 100 Average OnState Current Amperes Figure 4 Transient Thermal Impedance 0.7 2 a S ow o ~ 2 w N te \ o \ \ Ln Thermal Impedance C/Watts 0 .001 .01 0.1 1.0 10 100 Time in Seconds 10-600 Rev. 1