TIP29 / TIP29A / TIP29C — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29 / TIP29A / TIP29C Rev. 1.1.0
November 2014
TIP29 / TIP29A / TIP29C
NPN Epitaxial Silicon Transistor
Features
Medium Power Linear Switching Applications
Complementary to TIP30 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and stressi ng the parts to these levels is n ot re co mmended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP29 TIP29 TO-220 3L (Single Gauge) Bulk
TIP29A TIP29A TO-220 3L (Single Gauge) Bulk
TIP29C TIP29C TO-220 3L (Single Gauge) Bulk
TIP29CTU TIP29C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP29 40 VTIP29A 60
TIP29C 100
VCEO Collector-Emitter Voltage TIP29 40 VTIP29A 60
TIP29C 100
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 1 A
ICP Collector Current (Pulse) 3 A
IBBase Current 0.4 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP29 / TIP29A / TIP29C — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29 / TIP29A / TIP29C Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 30
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1)
TIP29 IC = 30 mA, IB = 0 40 V TIP29A 60
TIP29C 100
ICEO Collector Cut-Off Current TIP29 /
TIP29A VCE = 30 V, IB = 00.3
mA
TIP29C VCE = 60 V, IB = 00.3
ICES Collector Cut-Off Current TIP29 VCE = 40 V, VEB = 0 200
μA TIP29A VCE = 60 V, VEB = 0 200
TIP29C VCE = 100 V, VEB = 0 200
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 1.0 mA
hFE DC Current Gain(1) VCE = 4 V, IC = 0.2 A 40
VCE = 4 V, IC = 1 A 15 75
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 1 A, IB = 125 mA 0.7 V
VBE(on) Base-Emitter On Voltage(1) VCE = 4 V, IC = 1 A 1.3 V
fT Current Gain Bandwidth Product VCE = 10 V, IC = 200 mA 3.0 MHz
TIP29 / TIP29A / TIP29C — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29 / TIP29A / TIP29C Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000 VCE = 4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
10 100
0.1
1
10
DC
TIP29C VCEO MAX.
TIP29B VCEO MAX.
TIP29A VCEO MA X.
TIP29 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP29 / TIP29A / TIP29C — NPN Epitaxial Silicon Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP29 / TIP29A / TIP29C Rev. 1.1.0 4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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