9&( ,& 9 $ ,*%7'LH 60;+ 'LHVL]H[PP Doc. No. 5SYA1607-01 Aug 02 /RZORVVWKLQ,*%7GLH +LJKO\UXJJHG637GHVLJQ /DUJHIURQWERQGDEOHDUHD 0D[LPXP5DWHG9DOXHV 3DUDPHWHU Collector-Emitter Voltage (Tj = 25C, unless specified otherwise) 6\PERO &RQGLWLRQV 9DOXHV 8QLW VCES 1200 V DC Collector Current IC 50 A Maximum Collector Current ICM 100 A Operating Temperature Tj -40 ... +150 C &KDUDFWHULVWLF9DOXHV Limited by Tjmax (Tj = 25C, unless specified otherwise) 3DUDPHWHU 6\PERO Collector-Emitter Saturation Voltage VCE(sat) Collector-Emitter leakage Current ICES Gate-Emitter leakage Current IGES Gate-Emitter Threshold Voltage VGE(TO) &RQGLWLRQV PLQ W\S PD[ IC = 50 A, Tj = 25 C 1.7 1.9 VGE = 15 V Tj = 125 C 2.1 VCE = 1200 V, Tj = 25 C VGE = 0 V Tj = 125 C 200 4.5 V V 100 VCE = 0 V, VGE = 20 V IC = 2 mA, VCE = VGE 2.3 8QLW A A 200 nA 6.5 V td(on) IC = 50 A, VCC = 600 V, 100 ns tr RG 9GE = 15 V, 50 ns Turn-on switching energy Eon Tj = 125 C, L = 50 nH, 5.5 mJ Turn-off delay time td(off) Inductive load, 550 ns FWD : 5SLX12E1200 40 ns mJ Turn-on delay time Rise time Fall time tf Turn-off switching energy Eoff 5 Internal gate resistance RGint 5 Input capacitance Cies Vce = 25 V, Vge = 0 V, f = 1 MHz 4.5 nF Total gate charge Qge Vge = -15 .. +15 V 600 nC $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH 60;+ 0HFKDQLFDO&KDUDFWHULVWLFV 3DUDPHWHU 8QLW Overall die Dimensions LxW Exposed L x W (except gate pad) Front metal Gate pad LxW Thickness Metallization 1) Front Back 1) 9.1 x 9.0 mm 7.6 x 7.5 mm 1.2 x 1.2 mm 130 20 m 4 m 1.8 m AISi1 AI / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02. 2XWOLQH'UDZLQJ G Emitter Note : all dimensions are shown in mm Note : device is sensitive to electrostatic discharge $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH $%%6ZLW]HUODQG/WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1607-01 Aug 02