$%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH
9&( 9
,& $
'LHVL]H[PP
Doc. No. 5SYA1607-01 Aug 02
/RZORVVWKLQ,*%7GLH
+LJKO\UXJJHG637GHVLJQ
/DUJHIURQWERQGDEOHDUHD
0D[LPXP5DWHG9DOXHV (Tj = 25°C, unless specified otherwise)
3DUDPHWHU 6\PERO &RQGLWLRQV 9DOXHV 8QLW
Collector- Em itt er Voltage VCES 1200 V
DC Collector Current IC50 A
Maximum Collector Curr ent ICM Limited by Tjmax 100 A
Operating Temperature Tj-40 ... +150 °C
&KDUDFWHULVWLF9DOXHV (Tj = 25°C, unless specified otherwise)
3DUDPHWHU 6\PERO &RQGLWLRQV PLQ W\S PD[ 8QLW
Tj = 25 °C 1.7 1.9 2.3 V
Collector-Emitter Saturation
Voltage VCE(sat) IC = 50 A,
VGE = 15 V Tj = 125 °C 2.1 V
Tj = 25 °C 100 µACollector-Emitter leakage
Current ICES VCE = 1200 V,
VGE = 0 V Tj = 125 °C 200 µA
Gate-Emitt er leakag e Curr ent IGES VCE = 0 V, VGE = ±20 V ±200 nA
Gate-Emitter Threshold Vol tage VGE(TO) IC = 2 mA , V CE = VGE 4.5 6.5 V
Turn-on delay time td(on) 100 ns
Rise time tr50 ns
Turn-on switching energy Eon 5.5 mJ
Turn -off del a y time td(off) 550 ns
Fall time tf40 ns
Turn-off switching energy Eoff
IC = 50 A, VCC = 600 V,
RG 9GE = ±15 V,
Tj = 125 °C, Lσ = 50 nH,
Inductive load,
FWD : 5SLX12E1200
5mJ
Intern a l gate re sistance RGint 5
Input capacitance Cies Vce = 25 V, Vge = 0 V, f = 1 MHz 4.5 nF
Tota l gate charge Qge Vge = -15 .. +15 V 600 nC
,*%7'LH
60;+