TSM120N06LCP Taiwan Semiconductor N-Channel Power MOSFET 60V, 70A, 12m FEATURES KEY PERFORMANCE PARAMETERS Low RDS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching 100% UIS and Rg tested Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 60 V RDS(on) VGS = 10V 12 (max) VGS = 4.5V 15 m Qg 18 nC APPLICATIONS BLDC Motor Control Battery Power Management Secondary Synchronous Rectification TO-252(DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25C Continuous Drain Current Pulsed Drain Current ID TA = 25C (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25C TC = 125C TA = 25C TA = 125C Operating Junction and Storage Temperature Range 70 10 A IDM 280 A IAS EAS 20 60 A mJ PD PD 125 25 2.6 0.5 W W TJ, TSTG - 55 to +150 C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RJC 1 C/W Junction to Ambient Thermal Resistance RJA 49 C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R JA is guaranteed by design while RCA is determined by the user's board design. 1 Version: A1602 TSM120N06LCP Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250A BVDSS 60 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250A VGS(TH) 1.2 1.7 2.5 V Gate-Source Leakage Current VGS = 20V, VDS = 0V IGSS -- -- 100 nA -- -- 1 -- -- 100 -- 9.7 12 -- 11 15 gfs -- 40 -- Qg -- 37 -- Qg -- 18 -- Qgs -- 6 -- Qgd -- 7.5 -- Ciss -- 2118 -- Coss -- 136 -- Crss -- 86 -- Rg 0.5 1.6 3.2 td(on) -- 6.4 -- tr -- 13.4 -- td(off) -- 25.6 -- tf -- 6.6 -- VSD -- -- 1 V VGS = 0V, VDS = 60V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 60V TJ = 125C Drain-Source On-State Resistance VGS = 10V, ID = 10A (Note 3) VGS = 4.5V, ID = 10A Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 5V, ID = 10A A m S (Note 4) VGS = 10V, VDS = 30V, Total Gate Charge ID = 10A Total Gate Charge VGS = 4.5V, VDS = 30V, Gate-Source Charge ID = 10A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 30V Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz, open drain nC pF (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 30V, Turn-Off Delay Time ID = 10A, RG = 2, Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 10A Reverse Recovery Time IS = 10A , trr -- 17 -- ns Reverse Recovery Charge dI/dt = 100A/s Qrr -- 13 -- nC Notes: 1. Current limited by package. 2. L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25, IAS = 20A, Starting TJ = 25C 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM120N06LCP ROG PACKAGE PACKING TO-252(DPAK) 2,500pcs / 13" Reel 2 Version: A1602 TSM120N06LCP Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Transfer Characteristics 40 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) Output Characteristics 40 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 30 20 VGS=3V 10 30 20 25 10 150 0 0 1 2 3 0 4 1 On-Resistance vs. Drain Current 3 4 Gate-Source Voltage vs. Gate Charge 10 0.016 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance () 2 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.014 VGS=4.5V 0.012 0.01 VGS=10V 0.008 0.006 0.004 VDS=30V ID=10A 8 6 4 2 0 0.002 0 10 20 30 0 40 10 On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance () VGS=10V ID=10A 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 30 40 On-Resistance vs. Gate-Source Voltage 2.2 2 20 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55 0 100 125 150 0.04 0.035 0.03 0.025 0.02 0.015 ID=10A 0.01 0.005 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (C) 3 Version: A1602 TSM120N06LCP Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage C, Capacitance (pF) 3000 2500 CISS 2000 1500 1000 CRSS 500 COSS 0 1.2 ID=1mA 1.1 1 0.9 0.8 0 10 20 30 40 50 60 -75 VDS, Drain to Source Voltage (V) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 1000 100 IS, Reverse Drain Current (A) ID, Drain Current (A) -50 RDS(ON) 100 10 SINGLE PULSE RJC=1C/W TC=25C 1 10 150 1 25 -55 0.1 0 1 10 100 0.2 VDS, Drain to Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 SINGLE PULSE RJC=1C/W 0.1 t, Square Wave Pulse Duration (sec) 4 Version: A1602 TSM120N06LCP Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252(DPAK) SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 120N06 YML Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 5 Version: A1602 TSM120N06LCP Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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